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    • 4. 发明申请
    • Smelting furnace
    • 冶炼炉
    • US20040063057A1
    • 2004-04-01
    • US10433694
    • 2003-10-21
    • Johannes Vetter
    • F27B015/00
    • C03B5/2353C03B3/00C03B5/12C03B5/26F27B14/0806F27B14/143F27D3/1509F27D2019/0003F27D2099/0065F27D2099/008Y02P40/55
    • Up until now, in the case of smelting furnaces, especially smelting furnaces used to melt glass and having a melting unit accommodated in a combustion chamber, the melt being discharged from an outlet opening of the melting unit is regulated by mechanical means using a stopper rod. This entails the disadvantage that the melt flow is very irregular, in addition to which the risk exists that foreign particles might infiltrate the melt. According to the invention, the outlet opening is provided with a heatable outlet nozzle. The outlet nozzle is made of a material that exhibits good thermal conductivity and that, at the same time, displays low reactivity vis-null-vis the melt such as, for instance, platinum. A control unit regulates the heat output at the outlet nozzle as a function of the temperature of the melt. The invention ensures a uniform and homogeneous melt flow. The risk of infiltration by foreign substances is minimized.
    • 到目前为止,在冶炼熔炉的情况下,特别是用于熔化玻璃的熔炼炉和容纳在燃烧室中的熔融单元的熔化炉,从熔融单元的出口排出的熔体通过机械装置调节,使用塞杆 。 这导致熔体流动非常不规则的缺点,除此之外,外来颗粒可能渗入熔体中。 根据本发明,出口开口设置有可加热出口喷嘴。 出口喷嘴由表现出良好导热性的材料制成,并且与此同时,相对于例如铂的熔体显示低反应性。 控制单元根据熔体的温度调节出口喷嘴处的热量输出。 本发明确保均匀且均匀的熔体流动。 外来物质渗入的风险最小化。
    • 8. 发明申请
    • HEATING UNIT AND FILM-FORMING APPARATUS
    • 加热单元和成膜装置
    • US20130068164A1
    • 2013-03-21
    • US13611493
    • 2012-09-12
    • Naohisa IKEYAKunihiko SuzukiYuusuke Sato
    • Naohisa IKEYAKunihiko SuzukiYuusuke Sato
    • F27D11/00C23C16/46
    • C23C16/46C30B25/10C30B35/00F27B17/0025F27D2099/0065H01L21/67103
    • A heating unit and a film-forming apparatus comprising of a film-forming chamber, a heating unit for heating a substrate placed in the film-forming chamber, wherein the heating unit comprises of a heat source with a plane surfaced top, an electrode contacting electrically with the heat source, wherein the heat source has a ring-shape or a disk-shape that is formed by an individual, or plurality of heat source members. Wherein the heat source is comprised of a material selected from a group consisting of a carbon (C) material, a carbon material or a silicon carbide (SiC) material coated with silicon carbide (SiC), and a silicon carbide (SiC) material, and wherein the heat source has a ratio of the width (a) of the top portion direction to the thickness (X) of the side part (a/X) is 3 to 10.
    • 一种加热单元和成膜设备,包括成膜室,用于加热置于成膜室中的基底的加热单元,其中加热单元包括具有顶面平面的热源,电极接触 与热源电连接,其中热源具有由单个或多个热源构件形成的环形或圆盘形状。 其中,热源由选自由碳(C)材料,碳材料或涂覆有碳化硅(SiC)的碳化硅(SiC)材料和碳化硅(SiC)材料组成的组中的材料组成, 并且其中所述热源具有所述顶部方向的宽度(a)与所述侧面部分(a / X)的厚度(X)的比率为3至10。