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    • 3. 发明申请
    • Method and composition for removing organic coatings from a substrate
    • 从基材中除去有机涂层的方法和组合物
    • US20030144164A1
    • 2003-07-31
    • US10058675
    • 2002-01-29
    • Kolene Corporation
    • John F. PilznienskiJames C. Malloy
    • C23G001/00C23D017/00B08B003/00B08B007/00F23J001/00C03C023/00C11D001/00C09D009/04
    • C11D3/044C09D9/04C11D1/72C11D3/30C23G5/036
    • A method and composition for removing organic coatings or residues from a substrate is provided, which composition includes an organic carrier of ethanolamines and non-ionic alkylphenol ethoxylate surfactants and mixtures thereof and potassium hydroxide and being free of water. In use, the composition is formed by mixing the ethanolamines and the surfactants and adding the potassium hydroxide. The composition is maintained above the boiling point of water in liquid state, preferably from about 225null F. to about 350null F., and the workpieces having organic coatings or residues thereon, are immersed in the heated composition. If the composition is maintained essentially free of water, the alkali metal hydroxide will not attack substrates that would normally be attacked by alkali metal hydroxides when sufficient water is present to ionize the potassium hydroxide, such as zinc, aluminum and magnesium.
    • 提供了用于从底物中除去有机涂层或残留物的方法和组合物,该组合物包括乙醇胺和非离子烷基酚乙氧基化物表面活性剂及其混合物的有机载体和氢氧化钾并且不含水。 在使用中,通过混合乙醇胺和表面活性剂并加入氢氧化钾来形成组合物。 将组合物保持在液态沸点以上,优选约225°F至约350°F,并将其上具有有机涂层或残留物的工件浸入加热的组合物中。 如果组合物基本上不含水,则当存在足够的水以使氢氧化钾如锌,铝和镁离子化时,碱金属氢氧化物不会侵蚀通常被碱金属氢氧化物侵蚀的底物。
    • 5. 发明申请
    • ALUMINUM SAFE COMPOSITIONS FOR REMOVING CURED POLYSULFIDE RESINS
    • 用于去除固化的聚四氟乙烯树脂的铝安全组合物
    • US20130206166A1
    • 2013-08-15
    • US13586108
    • 2012-08-15
    • John Cleaon Moorre
    • John Cleaon Moorre
    • C23G1/22
    • C23G1/22C23G5/036C23G5/06
    • A metal-safe dissolving composition for cured resins, comprising a solvent blend that includes a metal safe solvent mixture with addition of a soluble alkali that exhibits a pKa value ≧12. The solvent mixture may include the preferred solvent for metal safety, gamma-butyrolactone (GBL), and the preferred soluble amine, 1,8-diazabicyclo(5.4.0)undec-7-ene (DBU). The solvent, n,n-dimethylacetamide (DMAC) or others, are chosen for high penetration and solvency to polar resins. To this mixture, a surfactant, inhibitor, and cellulose derivative may be added to produce a gel-form property. The product may be used to remove coatings and sealants present on vertical and horizontal surfaces and hard to reach areas commonly encountered when performing maintenance on aviation fuel tanks and similar equipment. Of key importance for the remover is its safety to aluminum and aluminum alloy substrates as demonstrated by modified test methods for sandwich corrosion, for example, ASTM F1110.
    • 一种用于固化树脂的金属安全溶解组合物,其包含溶剂共混物,其包含金属安全溶剂混合物,加入显示pKa值> = 12的可溶性碱。 溶剂混合物可以包括用于金属安全性的优选溶剂,γ-丁内酯(GBL)和优选的可溶性胺1,8-二氮杂双环(5.4.0)十一碳-7-烯(DBU)。 选择溶剂,n,正二甲基乙酰胺(DMAC)或其他,以便极性树脂的高渗透性和溶剂能力。 可以向该混合物中加入表面活性剂,抑制剂和纤维素衍生物以产生凝胶形式。 该产品可用于去除垂直和水平表面上存在的涂层和密封剂,并且难以到达在航空油箱和类似设备上进行维护时通常遇到的区域。 对于去除剂来说,重要的是其对铝和铝合金基材的安全性,如通过夹心腐蚀的改进测试方法所证明的,例如ASTM F1110。
    • 7. 发明授权
    • Etching residue removal method and semiconductor device fabrication method using this method
    • 蚀刻残渣去除方法和使用该方法的半导体器件制造方法
    • US07879533B2
    • 2011-02-01
    • US11429217
    • 2006-05-08
    • Takeshi Itou
    • Takeshi Itou
    • H01L21/00
    • C23G5/036C23G5/032G03F7/425H01L21/02071
    • An etching residue removal method includes a cleaning sequence. Preferably, the cleaning sequence has a first washing processing, first drying processing, stripper processing, rinsing processing, second washing processing and second drying processing. In the first washing processing, an insulation film and metal lines thereon are washed by pure water. In the first drying processing, the insulation film and metal lines are dried in a nitrogen atmosphere at room temperature, for example. In the stripper processing, the etching residue on the insulation film and metal lines are stripped by amine stripper, for example. In the rinsing processing, the insulation film and metal lines are rinsed with an IPA rinse solution, for example. In the second washing processing, the insulation film and metal lines are washed with pure water. In the second drying processing, the insulation film and metal lines are dried in the nitrogen atmosphere at room temperature, for example.
    • 蚀刻残渣除去方法包括清洗顺序。 优选地,清洁顺序具有第一洗涤处理,第一干燥处理,汽提器处理,漂洗处理,第二洗涤处理和第二干燥处理。 在第一洗涤处理中,绝缘膜及其上的金属线用纯水洗涤。 在第一干燥处理中,例如在室温下,在氮气气氛中干燥绝缘膜和金属线。 在汽提器处理中,绝缘膜和金属管线上的蚀刻残留物例如由胺剥离剂剥离。 在漂洗处理中,绝缘膜和金属线例如用IPA冲洗溶液冲洗。 在第二次洗涤处理中,绝缘膜和金属线用纯水洗涤。 在第二次干燥处理中,例如在室温下,在氮气气氛中干燥绝缘膜和金属线。