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    • 5. 发明授权
    • ESD protection structure with SiGe BJT devices
    • 具有SiGe BJT器件的ESD保护结构
    • US07235846B2
    • 2007-06-26
    • US11116807
    • 2005-04-27
    • Greg Fung
    • Greg Fung
    • H01L23/62H01L29/72H01L29/74H01L31/111H01L31/119
    • H01L27/0259H01L29/7378H01L2924/0002H01L2924/00
    • The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT) cell. This improved ESD protection scheme further uses the combination of trench isolation and buried subcollector layer of the SiGe BJT to confine ESD current, minimizing parasitic substrate leakage and achieving large forward voltages while imposing minimal parasitic capacitive loads on a protected active device. Since the ESD protection structure is formed from conventional SiGe BJT transistor cells through modification of the contact metallization, it can be fabricated in an available SiGe BiCMOS fabrication process without additional processing steps, and characterization data already available for the SiGe BJTs can be used to model the performance of the ESD protection devices.
    • 本发明提供了利用标准SiGe双极结晶体管(BJT)电池的重掺杂异质结基极的高导电性的ESD保护器件或结构。 这种改进的ESD保护方案进一步使用SiGe BJT的沟槽隔离和掩埋子集电极层的组合来限制ESD电流,最小化寄生衬底泄漏并实现大的正向电压,同时在受保护的有源器件上施加最小的寄生电容负载。 由于ESD保护结构是由传统的SiGe BJT晶体管单元通过改变接触金属化形成的,所以可以在可用的SiGe BiCMOS制造工艺中制造出无需额外的处理步骤,而已经可用于SiGe BJT的表征数据可用于建模 ESD保护器件的性能。