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    • 7. 发明授权
    • Imaging device with zero ohmic drop in a data conductor
    • 数据导体中零欧姆下降的成像装置
    • US09558706B2
    • 2017-01-31
    • US13876837
    • 2011-09-28
    • Marc ArquesJean-Luc MartinArnaud Peizerat
    • Marc ArquesJean-Luc MartinArnaud Peizerat
    • G09G3/36H04N5/365H04N5/3745
    • G09G3/3696H04N5/3658H04N5/3745
    • An imaging device comprising comprises a matrix of pixels, at least one data conductor connected to several pixels of the matrix, organized row-wise and successively transporting signals delivered by respectively the pixels of the row and an electronic current generator supplying several pixels, each of the pixels comprising: a transistor delivering at the node of the pixel, the signal delivered by the pixel considered and wherein can flow a bias current from the current generator, and a first electronic switch connecting the node of the pixel to the data conductor associated with this pixel as a function of a selection signal of the pixel. Each of the pixels comprises a second electronic switch, distinct from the first electronic switch, joined to the node of the pixel, the current arising from the generator to be made to flow in the transistor as a function of the selection signal for the pixel.
    • 一种成像装置,包括像素矩阵,连接到矩阵的几个像素的至少一个数据导体,分别行列和依次传送由行的像素传送的信号和提供几个像素的电子发生器,每个 所述像素包括:晶体管,其在所述像素的节点处传送由所考虑的像素传递的信号,并且其中可以流过来自所述电流发生器的偏置电流;以及第一电子开关,其将所述像素的所述节点连接到与所述像素相关联的数据导体 该像素作为像素的选择信号的函数。 每个像素包括与第一电子开关不同的第二电子开关,其连接到像素的节点,源于发生器的电流作为像素的选择信号的函数在晶体管中流动。
    • 8. 发明申请
    • POOLING OF TWO COLUMNS OF PIXELS OF AN IMAGE DETECTOR
    • 图像检测器像素的两个柱的沉积
    • US20160286146A1
    • 2016-09-29
    • US15033034
    • 2014-11-05
    • TRIXELL
    • Thibaut WIRTHBruno BOSSETSimon MARECAUXClaude VENINPierre ROHR
    • H04N5/378H01L27/146H04N5/374
    • An image detector comprises a sensor produced on a first monolithic substrate comprising a set of pixels organized in a matrix on rows and columns and configured to generate signals as a function of a radiation striking the detector, column conductors, each linking the pixels of a same column and intended to convey the signals generated by the pixels, at least one bump contact situated at the periphery of the first substrate and outside of the matrix of pixels and linked to the column conductors. At least two column conductors are connected together on the first substrate outside of the matrix of pixels and the column conductors connected together converge toward the at least one bump contact.
    • 图像检测器包括在第一单片基板上产生的传感器,包括在行和列上以矩阵形式组织的一组像素,并被配置为产生作为照射到检测器的辐射的函数的信号,列导体,每个链接相同的像素 并且旨在传送由像素产生的信号,至少一个凸起接触件,位于第一基板的外围并且位于像素矩阵的外部并且连接到列导体。 至少两个列导体在像素矩阵的第一基板上连接在一起,并且连接在一起的列导体朝向至少一个凸块接触收敛。
    • 10. 发明授权
    • Semiconductor device for radiation detection
    • 用于辐射检测的半导体器件
    • US08729652B2
    • 2014-05-20
    • US12282932
    • 2007-03-13
    • Anco HeringaErik Jan LousWibo Daniel Van NoortWilhelmus Cornelis Maria PetersJoost Willem Christiaan Veltkamp
    • Anco HeringaErik Jan LousWibo Daniel Van NoortWilhelmus Cornelis Maria PetersJoost Willem Christiaan Veltkamp
    • H01L31/115
    • G01T1/2018H01L27/14659H01L27/14663H01L31/115
    • The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1). This way the invention provides a semiconductor device (11) for radiation detection in which the influence on the performance of the semiconductor device (11) of ionizing radiation (X), such as X-rays, that penetrates into the substrate region (1) is reduced.
    • 本发明提供了一种用于放射线检测的半导体器件(11),其包括诸如硅的衬底半导体材料的衬底区域(1)和在半导体器件(11)的表面处的检测区域(3) 在半导体器件(11)上的电磁辐射(L)入射时,产生并检测出检测区域(3)对第一导电类型(例如电子)的载流子。 半导体器件(11)还包括阻挡半导体材料或隔离材料的阻挡区域(2,5,14),所述阻挡区域(2,5,14)是衬底区域(1)和衬底区域 用于通过诸如X射线的电离辐射(X)穿透而在衬底区域(1)中产生的电荷载体的检测区域(3)。 这样,本发明提供了一种用于放射线检测的半导体器件(11),其中对穿透到衬底区域(1)中的诸如X射线的电离辐射(X)的半导体器件(11)的性能的影响, 降低了。