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1. 发明授权

US08016987B2 Evaluation of the corrosion inhibiting activity of a coating 有权
标题翻译：评估涂层的腐蚀抑制活性
公开(公告)号：US08016987B2
公开(公告)日：2011-09-13
申请号：US12218148
申请日：2008-07-11
申请人： Martin W. Kendig , Melitta M. Hon
发明人： Martin W. Kendig , Melitta M. Hon
IPC分类号： G01N27/403
CPC分类号： G01N17/02
摘要： The corrosion inhibiting activity of a coating is determined from the effect of corrosion inhibiting species released by the coating on the oxygen reduction current for a cathode placed very close to the coating. A rotating disk electrode or pumped solution flow is used to sweep the corrosion inhibiting species from the coating surface to the cathode. The oxygen reduction current is measured under conditions of oxygen diffusion control.
摘要翻译：由涂层释放的腐蚀抑制物质对非常接近涂层的阴极的氧还原电流的影响确定涂层的腐蚀抑制活性。旋转圆盘电极或泵送溶液流被用于将腐蚀抑制物质从涂层表面扫除至阴极。在氧扩散控制的条件下测量氧还原电流。

2. 发明授权

US07790608B2 Buried via technology for three dimensional integrated circuits 有权
公开(公告)号：US07790608B2
公开(公告)日：2010-09-07
申请号：US12710323
申请日：2010-02-22
申请人： Stefan C. Lauxtermann , Jeffrey F. DeNatale
发明人： Stefan C. Lauxtermann , Jeffrey F. DeNatale
IPC分类号： H01L21/4763
CPC分类号： H01L25/0657 , H01L21/76898 , H01L25/50 , H01L2224/05573 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05599
摘要： A three dimensional integrated circuit and method for making the same. The three dimensional integrated circuit has a first and a second active circuit layers with a first metal layer and a second metal layer, respectively. The metal layers are connected by metal inside a buried via. The fabrication method includes etching a via in the first active circuit layer to expose the first metal layer without penetrating the first metal layer, depositing metal inside the via, the metal inside the via being in contact with the first metal layer, and bonding the second active circuit layer to the first active circuit layer using a metal bond that connects the metal inside the via to the second metal layer of the second active circuit layer.

3. 发明授权

US07768703B2 Dual field of view sighting system 有权
标题翻译：双视野瞄准系统
公开(公告)号：US07768703B2
公开(公告)日：2010-08-03
申请号：US11899296
申请日：2007-09-04
申请人： Bruce K. Winker , Milind Mahajan
发明人： Bruce K. Winker , Milind Mahajan
IPC分类号： G02B23/14
CPC分类号： G02B23/14 , F41G1/38
摘要： A dual field of view sighting system uses liquid crystals, flip-polarizers and/or flip-mirrors to select between at least two fields of view.
摘要翻译：双视野瞄准系统使用液晶，翻转偏振器和/或翻转镜来在至少两个视野之间进行选择。

4. 发明授权

US07608906B2 Simultaneous unipolar multispectral integrated technology (SUMIT) detectors 有权
标题翻译：同时单极多光谱综合技术（SUMIT）探测器
公开(公告)号：US07608906B2
公开(公告)日：2009-10-27
申请号：US11939527
申请日：2007-11-13
申请人： William Tennant
发明人： William Tennant
IPC分类号： H01L31/103
CPC分类号： H01L27/14647 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L2224/16
摘要： A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.
摘要翻译：一种多色光传感器，具有第一光电二极管，具有第一p型层和第一n型层，第一光电二极管在用第一波长范围的光子照射时产生电荷，第二光电二极管利用第二p型层和第二n型层，当用第二波长范围的光子照射时，第二光电二极管产生电荷;以及读出集成电路，经由第一金属互连电耦合到第一光电二极管的第一n型层，并电耦合到经由第二金属互连的第二光电二极管的第二n型层，第二金属互连穿过第一光电二极管以接触第二光电二极管的第二n型层，第二金属互连通过第一光电二极管与第一光电二极管分离第一钝化绝缘子。

5. 发明授权

US07498650B2 Backside illuminated CMOS image sensor with pinned photodiode 有权
标题翻译：具有固定光电二极管的背面照明CMOS图像传感器
公开(公告)号：US07498650B2
公开(公告)日：2009-03-03
申请号：US11683772
申请日：2007-03-08
申请人： Stefan C. Lauxtermann
发明人： Stefan C. Lauxtermann
IPC分类号： H01L31/09
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/1464
摘要： A backside illuminated CMOS image sensor having an silicon layer with a front side and a backside, the silicon layer liberates charge when illuminated from the backside with light, an active pixel circuitry located on the front side of the semiconductor layer, a pinned photodiode adjacent to the active pixel circuitry on the front side of the semiconductor layer and configured to collect charge liberated in the semiconductor layer, and an implant located in the semiconductor layer, underneath the active pixel circuitry, for allowing charge liberated in the semiconductor layer to drift from the backside of the semiconductor layer to the pinned photodiode on the front side of the semiconductor layer.
摘要翻译：背面照明的CMOS图像传感器具有具有正面和背面的硅层，当从光的背面照射时，硅层释放电荷，位于半导体层前侧的有源像素电路，与在半导体层的正面上的有源像素电路被配置为收集在半导体层中释放的电荷，以及位于有源像素电路下方的位于半导体层中的注入，用于允许在半导体层中释放的电荷从半导体层的背面到半导体层前侧的被钉扎光电二极管。

6. 发明授权

US07436342B2 Numerical full well capacity extension for photo sensors with an integration capacitor in the readout circuit using two and four phase charge subtraction 有权
标题翻译：使用两相和四相充电减法在读出电路中具有积分电容器的光电传感器的数值全容量扩展
公开(公告)号：US07436342B2
公开(公告)日：2008-10-14
申请号：US11669061
申请日：2007-01-30
申请人： Stefan C. Lauxtermann
发明人： Stefan C. Lauxtermann
IPC分类号： H03M1/34
CPC分类号： H04N5/37455 , H04N5/357
摘要： A detector circuit having an integration capacitor coupled to an amplifier via a switch matrix and a comparator coupled to the amplifier, the integration capacitor operable in two or more phases, the switch matrix is configured to phase switch the integration capacitor, the comparator triggers the phase switch when the output voltage of the amplifier passes the threshold voltage of the comparator.
摘要翻译：一种检测器电路，其具有通过开关矩阵耦合到放大器的积分电容器和耦合到放大器的比较器，所述积分电容器可在两个或多个相位中工作，所述开关矩阵被配置为相位切换积分电容器，所述比较器触发相位当放大器的输出电压通过比较器的阈值电压时切换。

7. 发明授权

US07390735B2 High temperature, stable SiC device interconnects and packages having low thermal resistance 有权
标题翻译：具有低耐热性的高温，稳定的SiC器件互连和封装
公开(公告)号：US07390735B2
公开(公告)日：2008-06-24
申请号：US11031435
申请日：2005-01-07
申请人： Vivek Mehrotra
发明人： Vivek Mehrotra
IPC分类号： H01L21/44
CPC分类号： H05K3/3463 , H01L23/3735 , H01L23/4924 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/072 , H01L25/18 , H01L2224/0401 , H01L2224/05639 , H01L2224/05644 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32014 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48472 , H01L2224/48739 , H01L2224/49 , H01L2224/73265 , H01L2224/81801 , H01L2224/83455 , H01L2224/8381 , H01L2224/83825 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/13055 , H01L2924/1306 , H01L2924/14 , H01L2924/15724 , H01L2924/15787 , H01L2924/181 , H01L2924/19107 , H01L2924/3651 , H05K1/0306 , H05K2203/0278 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2924/00012
摘要： A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.
摘要翻译：一种形成包含SiC或其他半导体器件的封装的方法，其利用瞬态液相（TLP）接合结合到其它部件或导电表面，以使用导电金属的原位形成的三元或四元混合物和使用TLP产生的器件产生高温熔点键三元或四元材料的键。组合物满足互连或接头的相互冲突的要求，其可以暴露于高温下，并且在导热，导电，空隙和抗蠕变性，耐腐蚀性以及在温度和功率循环方面是可靠的。

8. 发明授权

US07375948B2 Variable charge packet integrated circuit capacitor 有权
标题翻译：可变电荷分组集成电路电容器
公开(公告)号：US07375948B2
公开(公告)日：2008-05-20
申请号：US11452000
申请日：2006-06-12
申请人： John A. Higgins
发明人： John A. Higgins
IPC分类号： H01G4/228
CPC分类号： H01L29/93 , H01L27/0808 , H01L29/872
摘要： A variable IC capacitor includes a semiconductor layer doped to contain mobile charge carriers. Capacitor electrodes C1 and C2 are disposed adjacent to each other on the layer's surface, gate electrodes G1 and G2 are disposed on opposite sides of C1 and C2, and source and sink electrodes are disposed on opposite sides of G1 and G2. Potentials are applied to the electrodes as needed to inject and then confine a finite charge into the region under C1 and C2. A drive voltage V applied between C1 and C2 causes the charge packet to move back and forth beneath them, such that the effective capacitance C seen by drive voltage V is given by C=Q/V, where Q is the magnitude of the charge packet.
摘要翻译：可变IC电容器包括掺杂以包含移动电荷载流子的半导体层。电容电极C 1和C 2在层的表面上彼此相邻地设置，栅电极G 1和G 2设置在C 1和C 2的相对侧上，并且源极和接收电极设置在G 1的相对侧和G 2。根据需要将电位施加到电极上，然后将有限电荷限制在C 1和C 2下的区域中。施加在C 1和C 2之间的驱动电压V使得电荷包在它们之下来回移动，使得由驱动电压V所见的有效电容C由C = Q / V给出，其中Q是充电包。

9. 发明授权

US07333783B2 Mobile device with manually operated power source 失效
标题翻译：带手动电源的移动设备
公开(公告)号：US07333783B2
公开(公告)日：2008-02-19
申请号：US11107670
申请日：2005-04-14
申请人： Jonathan P. Rode
发明人： Jonathan P. Rode
IPC分类号： H04B1/04
CPC分类号： H02K7/1853 , H02K35/02 , H04B1/3883
摘要： A mobile device with a manually operated power source which generates power sufficient to operate the device when shaken by a user. A cable connected between the power source and mobile device carries the generated power from the power source to the mobile device such that the mobile device can be powered. The cable has a length sufficient to enable a user to hold the mobile device in one hand and the power source in the other hand such that the mobile device can be held stationary and used while the power source is simultaneously shaken. The mobile device and power source are preferably arranged such that they can be mechanically coupled together to form a single unit.
摘要翻译：一种具有手动操作的电源的移动设备，其在由用户摇动时产生足以操作该设备的电力。连接在电源和移动设备之间的电缆将所产生的电力从电源运送到移动设备，使得移动设备可以被供电。电缆的长度足以使用户能够一只手握住移动设备，另一方面使电源能够在电源同时摇动时将移动设备保持静止并使用。移动设备和电源优选地被布置成使得它们可以机械耦合在一起以形成单个单元。

10. 发明授权

US07261430B1 Thermal and intrinsic stress compensated micromirror apparatus and method 有权
标题翻译：热和内应力补偿微镜装置和方法
公开(公告)号：US07261430B1
公开(公告)日：2007-08-28
申请号：US11360165
申请日：2006-02-22
申请人： Jeffrey F. DeNatale , Philip A. Stupar , Chialun Tsai , Robert L. Borwick, III
发明人： Jeffrey F. DeNatale , Philip A. Stupar , Chialun Tsai , Robert L. Borwick, III
IPC分类号： G02B7/182 , G02B5/132 , G02B26/00
CPC分类号： G02B7/181 , G02B26/0841
摘要： A micromirror apparatus includes a device layer having a recess, a multilayer thin-film dielectric reflector coupled to and structurally supported by the device layer on the opposite side of the device layer from said recess, and a stress compensator seated in the recess, with the stress compensator operable to resist device layer bending moments resulting from intrinsic and thermal mismatch stresses between the multilayer thin-film dielectric reflector and the device layer.
摘要翻译：微镜装置包括具有凹部的器件层，耦合到器件层并在结构上由器件层与所述凹部相反的结构上支撑的多层薄膜电介质反射器和位于凹部中的应力补偿器，应力补偿器可操作以抵抗由多层薄膜电介质反射器和器件层之间的固有和热失配应力引起的器件层弯曲力矩。

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