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    • 7. 发明授权
    • Magnetostatically coupled thin-film magnetic memory devices
    • 磁耦合薄膜磁性存储器件
    • US3701983A
    • 1972-10-31
    • US3701983D
    • 1969-12-19
    • SYLVANIA ELECTRIC PROD
    • FRANKLIN DENNIS MHORNREICH RICHARD MRUBINSTEIN HARVEY
    • H01F10/06G11C11/14
    • H01F10/06
    • A multilayer magnetostatically coupled thin-film magnetic memory device comprising, in succession, a first magnetic film, a chromium-copper alloy conducting layer having a reasonably low resistivity, a smoothing layer, and a second magnetic film. Due to the presence of chromium in the chromium-copper alloy forming the conducting layer, when the second magnetic film is subsequently formed on the smoothing layer at an elevated temperature, the resulting grain growth and surface roughness of the chromium-copper alloy conducting layer are less severe than with other known metals having reasonably low resistivity values (e.g., copper, silver, gold, and aluminum) previously suggested for use as conducting layers in magnetostatically coupled thinfilm magnetic memory devices. Consequently, the effects of grain growth and surface roughness of the chromium-copper alloy conducting layer on the static magnetic properties of the second magnetic film are less severe than heretofore, and a smaller combined thickness of the conducting layer and smoothing layer is required to make the values of the static magnetic properties of the first and second magnetic films nearly equal. As a further result of the smaller combined thickness of the conducting and smoothing layers made possible by the use of chromium in the chromium-copper alloy, an improved magnetostatic coupling between the two magnetic films is obtained. An alternative multiplayer magnetostatically coupled thin-film magnetic memory device having no smoothing layer is also disclosed for use in less stringent applications where very close matching of the values of the static magnetic properties of the two magnetic films is not required.
    • 8. 发明授权
    • Handwriting authentication technique
    • 手写认证技术
    • US3699517A
    • 1972-10-17
    • US3699517D
    • 1970-09-24
    • SYLVANIA ELECTRIC PROD
    • DYCHE JAMES W
    • G06K9/00G07C9/00G06K9/10
    • G06K9/00154G07C9/0015
    • Apparatus and method for measuring and computing velocity and acceleration of a pen point and the pen-paper contacts during writing of a signature and comparing derived data with reference data obtained from several prior signatures to determine whether the real time and reference signatures were made by the same person. The variations x(t) and y(t) of pen point coordinates with time and pen-paper contact intervals are obtained from a graphic tablet. Differentiator circuit means derive x and y velocity and acceleration components which are converted from analog to digital form for processing in a digital moment computer. Contact interval and end of signature computers receive pen point contact signals and compute the total time duration of the signature as well as the time duration of each of the first five pen-paper contact intervals normalized to the duration of the entire signature. The outputs of the moment, contact interval, and end of signature computers are sixteen components of a real time signature vector. A reference signature vector comprised of the mean values of sixteen similar components is predetermined from a plurality of prior true signatures, the deviation of each of those mean component values from the corresponding component value in a real time signature is compared with a variation limit value for that component to determine a correlation, and an authentication decision is made based on a minimum number of such correlations.
    • 用于在签名期间测量和计算笔尖和笔式触点的速度和加速度的装置和方法,并将导出的数据与从几个先前签名获得的参考数据进行比较,以确定实时和参考签名是由 同一个人。 笔迹坐标随时间和笔 - 纸接触间隔的变化x(t)和y(t)从图形平板电脑获得。 微分电路意味着导出x和y速度和加速度分量,它们从模拟转换成数字形式,用于在数字时刻计算机中进行处理。 接触间隔和签名结束计算机接收笔点接触信号,并计算签名的总持续时间以及标准化为整个签名的持续时间的前五笔笔纸接触间隔中的每一个的持续时间。 时刻,接触间隔和签名结束的输出是实时签名向量的十六个分量。 由十六个相似分量的平均值组成的参考签名矢量是从多个先前的真实签名中预先确定的,将这些平均分量值中的每一个与实时签名中的对应分量值的偏差与变化极限值进行比较, 该组件确定相关性,并且基于这种相关性的最小数量进行认证决定。
    • 9. 发明授权
    • Method for fabricating multilayer magnetic devices
    • 制造多层磁性器件的方法
    • US3677843A
    • 1972-07-18
    • US3677843D
    • 1970-02-02
    • SYLVANIA ELECTRIC PROD
    • REISS STEFAN E
    • H01F41/34C23F17/00H01F41/14H05K3/06
    • H01F41/34Y10S428/90
    • METHOD FOR FABRICATING MULTILAYER MAGNETOSTATICALLYCOUPLED THIN-FILM MAGNETIC MEMORY DEVICES. A PLURALITY OF LAYERS ARE DEPOSITED IN SUCCESSION ON A GLASS OR QUARTZ SUBSTRATE. THE LAYERS INCLUDE A FIRST PERMALLOY MAGNETIC FILM, A CHROMIUM BARRIER LAYER, A CHROMIUM-COPPER ALLOY SECOND PERMALLOY MAGNETIC FILM, A SILICON MONOXIDE PROTECTIVE LAYERS, A CHROMIUM MASKING LAYER, AND A PHOTOSENSITIVE RESISTANT MATERIAL MASKING LAYER. OPENINGS DELINEATING THE BOUNDARIES OF THE DESIRED MAGNETIC MEMORY DEVICES ARE THEN FORMED IN THE MASKING LAYER OF PHOTOSENSITIVE RESISTANT MATERIAL. SELECTIVE ETCHING MATERIALS ARE THEN USED, IN FOUR SUCCESSIVE ETCHING OPERATIONS, TO INITIALLY FORM AN OPENING IN THE CHROMIUM MASKING LAYER (FIRST ETCHING OPERATION), FOLLOWED BY OPENINGS IN THE SILICON MONOXIDE PROTECTIVE LAYER, THE SECOND PERMALLOY MAGNETIC FILM, THE SILICON MONOXIDE SMOOTHING LAYER, AND THE CHROMIUM-COPPER ALLOY CONDUCTING LAYER (SECOND ETCHING OPERATION), AN OPENING IN THE CHROMIUM BARRIER LAYER (THIRD ETCHING OPERATION), AND AN OPENING IN THE FIRST PERMALLOY MAGNETIC FILM (FOURTH ETCHING OPERATION).