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1. 发明授权

US6163141A Electronic apparatus for stopping supply of power to load during voltage detection operation 有权
标题翻译：用于在电压检测操作期间停止向负载供电的电子设备
公开(公告)号：US6163141A
公开(公告)日：2000-12-19
申请号：US235672
申请日：1999-01-22
申请人： Yoshifumi Yoshida , Fumiyasu Utsunomiya
发明人： Yoshifumi Yoshida , Fumiyasu Utsunomiya
IPC分类号： H02J1/00 , H02J7/00 , G05F1/40 , G05F1/44 , G05F1/56
CPC分类号： H02J7/0065
摘要： An electronic apparatus which controls the driving of a load circuit in accordance with a detected feed power voltage. The feed power voltage can be accurately detected even when it is low. In order to achieve this, the apparatus in one embodiment includes a power feed unit, a boosting circuit for increasing a voltage of the supply power, a voltage detecting circuit for detecting the voltage of the supply power as increased by the boosting circuit and outputting a voltage detection signal, and the load circuit which is driven based on the supply power. A voltage detection circuit detects the supply voltage only when it is not being used to drive the load circuit.
摘要翻译：一种电子设备，其根据检测到的馈送电源电压来控制负载电路的驱动。即使低电压，也能够精确地检测供电电压。为了实现这一点，一个实施例中的装置包括供电单元，用于增加供电电压的升压电路，用于检测由升压电路增加的供电电压的电压检测电路，并输出电压检测信号，以及基于电源驱动的负载电路。电压检测电路仅在不用于驱动负载电路时检测电源电压。

2. 发明授权

US6122185A Electronic apparatus 失效
标题翻译：电子仪器
公开(公告)号：US6122185A
公开(公告)日：2000-09-19
申请号：US121061
申请日：1998-07-21
申请人： Fumiyasu Utsunomiya , Yoshifumi Yoshida , Miwa Moriuchi
发明人： Fumiyasu Utsunomiya , Yoshifumi Yoshida , Miwa Moriuchi
IPC分类号： G04C10/00 , G04G19/02 , H02M3/07 , H02M3/18
CPC分类号： G04C10/00 , G04G19/02 , H02M3/07
摘要： An electronic apparatus is comprised of a generator 11 in which a voltage is changed as time elapses, a booster circuit 12 for boosting an output voltage of the generator 11, and an oscillator circuit 13 that drives the booster circuit 12. When the voltage of the generator 11 changes as time elapses so that the voltage exceeds the minimum driving voltage of the oscillator circuit 13, the oscillator circuit 13 obtains power for starting oscillation from the generator 11. The oscillator circuit 13 that has started oscillation drives the booster circuit 12 to thereby boost the output voltage generated by the generator 11. Since the oscillator circuit 13 after starting oscillation continuously performs oscillation using the power boosted by the booster circuit 12, even if the voltage of the generator 11 changes as time elapses so that the voltage becomes lower than the minimum driving voltage of the oscillator circuit 13, the voltage can be boosted to the minimum driving voltage of the oscillator circuit 13 or higher.
摘要翻译：电子设备包括其中电压随时间而改变的发电机11，用于升压发电机11的输出电压的升压电路12以及驱动升压电路12的振荡电路13。发电机11随时间而变化，使得电压超过振荡电路13的最小驱动电压，振荡电路13从发生器11获得启动振荡的电力。开始振荡的振荡电路13驱动升压电路12 升压发电机11产生的输出电压。由于启动振荡后的振荡电路13使用升压电路12升压的功率连续地进行振荡，所以即使发电机11的电压随时间而变化，电压变低振荡器电路13的最小驱动电压，电压可以升高到osc的最小驱动电压错觉电路13或更高。

3. 发明授权

US6112525A Cooling unit 失效
标题翻译：冷却单元
公开(公告)号：US6112525A
公开(公告)日：2000-09-05
申请号：US107588
申请日：1998-06-16
申请人： Yoshifumi Yoshida , Matsuo Kishi , Minao Yamamoto
发明人： Yoshifumi Yoshida , Matsuo Kishi , Minao Yamamoto
IPC分类号： F25B21/02 , G05D23/24 , H01L35/00 , H01L35/28 , H01L35/30 , H01L35/32 , F25B21/00
CPC分类号： H01L35/30 , F25B21/02 , G05D23/2401 , H01L35/00 , F25B2321/0212
摘要： A cooling unit is structured such that a temperature sensor is formed on at least one of the substrates that form a thermoelectric conversion device to which thermoelectric elements are connected, an input/output electrode extending from the temperature sensor and an electrode formed on the other surface opposed to the substrate on which the temperature sensor is formed are connected to each other by electrically conductive material, and a control circuit for controlling a current supplied to the thermoelectric conversion device according to an output of the temperature sensor is connected thereto. By this structure, only one surface of the substrate is subjected to a manufacturing process, and there is no need for a temperature sensor such as a thermistor to be supplied as a discrete component for mounting on a substrate of the thermoelectric conversion device. There is also no need for a temperature sensor to be connected directly on a surface of the thermoelectric conversion device which is to be adjusted in temperature, thereby being capable of easily and accurately adjusting the temperature at the thermoelectric conversion device.
摘要翻译：冷却单元被构造成使得温度传感器形成在形成热电元件连接的热电转换装置的至少一个基板上，从温度传感器延伸的输入/输出电极和形成在另一表面上的电极与其上形成有温度传感器的基板相对的导电材料彼此连接，并且用于根据温度传感器的输出控制供应到热电转换装置的电流的控制电路被连接到其上。通过这种结构，仅对衬底的一个表面进行制造处理，并且不需要诸如热敏电阻的温度传感器作为用于安装在热电转换器件的衬底上的分立元件。也不需要将温度传感器直接连接在要调节温度的热电转换装置的表面上，从而能够容易且精确地调节热电转换装置的温度。

4. 发明授权

US6084172A Thermoelectric conversion component 失效
标题翻译：热电转换元件
公开(公告)号：US6084172A
公开(公告)日：2000-07-04
申请号：US47860
申请日：1998-03-25
申请人： Matsuo Kishi , Minao Yamamoto , Yoshifumi Yoshida
发明人： Matsuo Kishi , Minao Yamamoto , Yoshifumi Yoshida
IPC分类号： H01L35/16 , H01L35/00 , H01L35/32
CPC分类号： H01L35/32 , H01L35/00
摘要： A .pi.-type thermoelectric conversion component detects and controls temperature and at the same time exhibits a cooling performance inherently possessed by the thermoelectric conversion component without the need for mounting a discrete temperature detecting unit. To achieve this, a temperature detecting unit, such as a thin film thermistor or doped semiconductor region, is directly integrated on a surface of a substrate forming the thermoelectric component. In one embodiment, a monocrystalline silicon wafer is used as at least one of the opposing substrates of the thermoelectric conversion component, a temperature detecting unit having a diffused resistor is formed therein. An electrode of the temperature detecting unit is connected to an electrode formed on the opposing substrate to reduce the thermal load. There is thus no need for mounting a discrete temperature detecting unit, which places a thermal load on the thermoelectric conversion component, and it is thus possible to perform temperature detection from the same substrate to which a power supply of the thermoelectric conversion component is applied. It is also possible to obtain a cooling performance inherently possessed by the thermoelectric conversion component without the need to increase the performance criteria of the device to incorporate a temperature detecting unit.
摘要翻译： pi型热电转换部件检测和控制温度，同时表现出热电转换部件固有地具有的冷却性能，而不需要安装离散温度检测单元。为了实现这一点，诸如薄膜热敏电阻或掺杂半导体区域的温度检测单元直接集成在形成热电组件的基板的表面上。在一个实施例中，使用单晶硅晶片作为热电转换元件的相对基板中的至少一个，在其中形成具有扩散电阻器的温度检测单元。温度检测单元的电极连接到形成在相对基板上的电极，以减少热负荷。因此，不需要安装将热负荷放置在热电转换元件上的离散温度检测单元，因此可以从施加热电转换元件的电源的同一基板进行温度检测。也可以获得由热电转换部件固有地具有的冷却性能，而不需要增加装置的温度检测单元的性能标准。

5. 发明授权

US6006606A Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US6006606A
公开(公告)日：1999-12-28
申请号：US844323
申请日：1997-04-18
申请人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
发明人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
IPC分类号： B81B3/00 , G01P15/12 , H01L29/84
CPC分类号： G01P15/123
摘要： A semiconductor acceleration sensor comprises a sensor element having a first surface for receiving an acceleration force and second opposite surfaces disposed generally perpendicular to the first surface, a support for supporting and fixing the sensor element, and a detecting device disposed on the second opposite surfaces of the sensor element for detecting a variation of a physical quantity due to an acceleration force applied to the first surface of the sensor element.
摘要翻译：半导体加速度传感器包括具有用于接收加速力的第一表面和大致垂直于第一表面设置的第二相对表面的传感器元件，用于支撑和固定传感器元件的支撑件，以及设置在第二相对表面上的检测装置用于检测由于施加到传感器元件的第一表面的加速力引起的物理量的变化的传感器元件。

6. 发明授权

US6124148A Method of manufacturing semiconductor acceleration sensor 失效
标题翻译：制造半导体加速度传感器的方法
公开(公告)号：US6124148A
公开(公告)日：2000-09-26
申请号：US844151
申请日：1997-04-18
申请人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
发明人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/12 , H01L21/301 , H01L29/84 , H02L21/00
CPC分类号： G01P15/123 , G01P15/0802 , G01P2015/0828 , Y10S148/028
摘要： A method of manufacturing a semiconductor acceleration sensor comprises forming a strain sensing section on a surface of a semiconductor wafer, fixing the semiconductor wafer to a cooled fixing stage, cutting out a structural body having the strain sensing section from the semiconductor wafer, and connecting a support member to the structural body cut from the semiconductor wafer.
摘要翻译：一种制造半导体加速度传感器的方法，包括在半导体晶片的表面上形成应变感测部，将半导体晶片固定在冷却固定台上，从半导体晶片切出具有应变感测部的结构体，支撑构件到从半导体晶片切割的结构体。

7. 发明授权

US5744850A Photoelectric conversion semiconductor device 失效
标题翻译：光电转换半导体器件
公开(公告)号：US5744850A
公开(公告)日：1998-04-28
申请号：US733967
申请日：1996-10-18
申请人： Keiji Sato , Yutaka Saitoh , Tadao Akamine
发明人： Keiji Sato , Yutaka Saitoh , Tadao Akamine
IPC分类号： H01L31/10 , H01L27/144 , H01L31/107 , H01L31/075 , H01L31/105 , H01L31/117
CPC分类号： H01L27/1443 , H01L31/107
摘要： A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N.sup.+ -type impurity domain whose impurity concentration is higher than that of an N.sup.- -type semiconductor substrate is formed on one surface thereof and a P.sup.+ -type impurity domain is formed on the opposite surface. An SiO.sub.2 film, an Si.sub.3 N.sub.4 film and an SiO.sub.2 film are formed extending to the domain of the N.sup.- -type semiconductor substrate, exceeding the N.sup.+ -type impurity domain. An anode electrode is formed on the N.sup.+ -type impurity domain and a cathode electrode is formed on the P.sup.+ -type impurity domain. A polysilicon gate electrode is formed on the SiO.sub.2 film, i.e. the top layer, and an Al gate electrode is formed thereon. A reverse voltage is applied between the anode electrode and the cathode electrode and a predetermined voltage is applied between the anode electrode and the Al gate electrode.
摘要翻译：提供了具有可容易地制造的放大功能的新颖的光电转换半导体器件。在其一个表面上形成杂质浓度高于N型半导体衬底的杂质浓度的N +型杂质区域，在相对的表面上形成P +型杂质区域。形成了延伸到N型半导体衬底的超过N +型杂质域的SiO 2膜，Si 3 N 4膜和SiO 2膜。在N +型杂质区域上形成阳极电极，在P +型杂质区域上形成阴极电极。在SiO 2膜即顶层上形成多晶硅栅电极，在其上形成Al栅电极。在阳极电极和阴极电极之间施加反向电压，并且在阳极电极和Al栅电极之间施加预定电压。

8. 发明授权

US6114685A Solid-state radiation detector having a charge transfer device 失效
标题翻译：具有电荷转移装置的固态放射线检测器
公开(公告)号：US6114685A
公开(公告)日：2000-09-05
申请号：US12168
申请日：1998-01-22
申请人： Keiji Sato , Yutaka Saitoh
发明人： Keiji Sato , Yutaka Saitoh
IPC分类号： G01T1/24 , H01L27/14 , H01L27/146 , H01L27/148 , H01L31/09 , H01L31/10 , H01J40/14
CPC分类号： H01L27/14676 , H01L27/14893
摘要： A solid-state radiation detecting device comprises an insulation layer having a pair of opposed surfaces. First and second single crystal silicon semiconductors are disposed on respective ones of the opposed surfaces of the insulating layer. A photoelectric conversion element is disposed on the first single crystal silicon semiconductor. A signal processing circuit having a charge transfer device is disposed on the second single crystal silicon semiconductor.
摘要翻译：固态放射线检测装置包括具有一对相对表面的绝缘层。第一和第二单晶硅半导体设置在绝缘层的相对表面的相应表面上。光电转换元件设置在第一单晶硅半导体上。具有电荷转移装置的信号处理电路设置在第二单晶硅半导体上。

9. 发明授权

US5889311A Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US5889311A
公开(公告)日：1999-03-30
申请号：US807179
申请日：1997-02-27
申请人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
发明人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
IPC分类号： G01L1/18 , B81B3/00 , B81B7/00 , G01L9/04 , G01P1/02 , G01P15/12 , H01L21/301 , H01L29/84 , H01L29/82
CPC分类号： B81B7/0077 , G01P1/023 , G01P15/123 , G01P2015/0828
摘要： A semiconductor device comprises a semiconductor acceleration sensor having a cuboid-shaped cantilever cut from a semiconductor wafer, a detecting device disposed on the cantilever for detecting a displacement of the cantilever due to an acceleration force applied to the cantilever, and a supporter for supporting and fixing the cantilever at one end thereof.
摘要翻译：半导体器件包括半导体加速度传感器，其具有从半导体晶片切割的长方体形悬臂，设置在悬臂上的检测装置，用于检测由于施加到悬臂的加速力而引起的悬臂的位移，以及用于支撑和在其一端固定悬臂。

10. 发明授权

US6158283A Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US6158283A
公开(公告)日：2000-12-12
申请号：US798290
申请日：1997-02-07
申请人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
发明人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
IPC分类号： G01L1/18 , B81B3/00 , B81B7/00 , G01L9/00 , G01L9/04 , G01P1/02 , G01P15/12 , G01P15/18 , H01L21/301 , H01L29/84
CPC分类号： B81B7/0077 , G01P1/023 , G01P15/123 , G01P2015/0828
摘要： A semiconductor acceleration sensor comprises a cantilever structure formed from a semiconductor wafer and having a first surface for receiving an acceleration force, a second surface disposed generally orthogonal to the first surface, and strain sensing portions disposed on the second surface. A supporting body supports the cantilever structure. A plurality of bridge circuits are disposed on the second surface of the rectangular parallelepiped shaped structure. Each of the bridge circuits has a plurality of the strain sensing portions.
摘要翻译：半导体加速度传感器包括由半导体晶片形成并具有用于接收加速力的第一表面的悬臂结构，大致垂直于第一表面设置的第二表面和设置在第二表面上的应变感测部。支撑体支撑悬臂结构。多个桥接电路设置在长方体形状结构的第二表面上。每个桥接电路具有多个应变感测部分。

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