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    • 4. 发明授权
    • Method of embedding semiconductor chip in support plate
    • 将半导体芯片嵌入支撑板的方法
    • US07274099B2
    • 2007-09-25
    • US11510604
    • 2006-08-28
    • Shih-Ping Hsu
    • Shih-Ping Hsu
    • H01L23/12
    • H01L21/56H01L23/3107H01L23/5389H01L24/19H01L24/20H01L24/24H01L24/82H01L25/50H01L2224/24227H01L2224/82039H01L2924/01029H01L2924/01033H01L2924/01082H01L2924/014H01L2924/14
    • A method of embedding a semiconductor chip in a support plate and an embedded structure thereof are proposed. A first dielectric layer having a reinforced filling material is provided, and a semiconductor chip is mounted on the first dielectric layer. A support plate having an opening and a second dielectric layer having a reinforced filling material are provided. The first dielectric layer mounted with the semiconductor chip, the support plate, and the second dielectric layer are pressed together, such that the semiconductor chip is received in the opening of the support plate, and the dielectric layers fill in a gap between the semiconductor chip and the opening of the support plate. The reinforced filling material of the dielectric layers can maintain flatness and consistency of the semiconductor chip embedded in the support plate, and fine circuits can be fabricated on the support plate by build-up and electroplating processes.
    • 提出了一种将半导体芯片嵌入支撑板及其嵌入结构中的方法。 提供具有增强填充材料的第一电介质层,并且半导体芯片安装在第一电介质层上。 提供具有开口的支撑板和具有增强填充材料的第二介电层。 将安装有半导体芯片,支撑板和第二电介质层的第一电介质层压在一起,使得半导体芯片被接收在支撑板的开口中,并且电介质层填充在半导体芯片 和支撑板的开口。 电介质层的增强填充材料可以保持嵌入在支撑板中的半导体芯片的平坦度和一致性,并且可以通过堆积和电镀工艺在支撑板上制造精细的电路。
    • 8. 发明申请
    • BGA substrate with direct heat dissipating structure
    • BGA基板具有直接散热结构
    • US20020189853A1
    • 2002-12-19
    • US09957372
    • 2001-09-20
    • Phoenix Precision Technology Corp.
    • Shih-Ping Hsu
    • H05K007/20
    • H01L23/49816H01L23/3677H01L24/48H01L2224/05599H01L2224/16H01L2224/32188H01L2224/45099H01L2224/48091H01L2224/48227H01L2224/85399H01L2924/00014H01L2924/01078H01L2924/01079H01L2924/15311H01L2924/181H01L2924/00012
    • BGA substrate with direct heat dissipating structure The present invention discloses a structure of BGA substrate with direct heat-dissipating structure, said structure comprising: a heat spreader, no less than one insulating resin layer, an upper circuit layer, a lower circuit layer, and a plurality of electrically-conducting plugs. The heat spreader comprises a body part, a loading part, and a junction part. The loading part is the upper region of heat spreader. The junction part is the lower region of the heat spreader. The periphery of said junction part extends outward for forming a protruding edge. The body part is embedded into the central region of the substrate. The upper circuit layer is formed on the surface of said resin layer. The lower circuit layer is formed on lower surface of said resin layer and comprises a plurality of solder pads. The upper and lower circuit layers are conducted by electrically conductive plugs. The heat generated from chip is dissipated by heat spreader instead of heat-conducting plugs in traditional art. The cross sectional area of heat spreader is larger than the heat-conducting plug, which enhances the performance of heat dissipation.
    • 具有直接散热结构的BGA基板本发明公开了一种具有直接散热结构的BGA基板的结构,所述结构包括:散热器,不少于一个绝缘树脂层,上电路层,下电路层和 多个导电插头。 散热器包括主体部分,装载部分和接合部分。 装载部分是散热器的上部区域。 接头部分是散热器的下部区域。 所述接合部分的周边向外延伸以形成突出边缘。 主体部分嵌入基板的中心区域。 上层电路层形成在树脂层的表面上。 下电路层形成在所述树脂层的下表面上并且包括多个焊盘。 上下电路层由导电插头导电。 由散热器代替传统技术中的导热塞,从芯片产生的热量消散。 散热器的横截面积大于导热塞,从而提高散热性能。