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1. 发明申请

US20090218562A1 High brightness light emitting diode with a bidrectionally angled substrate 失效
标题翻译：高亮度发光二极管，具有双偏角底板
公开(公告)号：US20090218562A1
公开(公告)日：2009-09-03
申请号：US12381238
申请日：2009-03-10
申请人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
发明人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/22 , Y10S438/973
摘要： A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the (100) substrate is a III-V or a IV-IV group semiconductor substrate, and has a crystal orientation such that a (100) plane of the (100) substrate is inclined 2 to 20° toward the [0-1-1] direction and 1 to 8° toward the [0-11] direction.
摘要翻译：发光二极管包括同时向第一和第二方向倾斜的衬底，在衬底上形成有第一导电类型的半导体材料的第一覆层，形成在第一覆层上的有源层和形成有第二覆层的第二覆层，在所述有源层上具有第二导电类型的半导体材料，其中在所述第一包层，所述第二包层和所述有源层的界面上形成凹凸，并且所述（100）衬底为III-V或具有使（100）基板的（100）面朝向[0-1-1]方向倾斜2〜20°，朝向[0-1-1]方向1〜8°的晶体取向的晶体取向， 0-11]方向。

2. 发明授权

US07524708B2 Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate 失效
标题翻译：具有双向倾斜基板的高亮度发光二极管的制造方法
公开(公告)号：US07524708B2
公开(公告)日：2009-04-28
申请号：US11359798
申请日：2006-02-22
申请人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
发明人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
IPC分类号： H01L21/00 , H01L21/84 , H01L29/04
CPC分类号： H01L33/16 , H01L33/22 , Y10S438/973
摘要： A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.
摘要翻译：发光二极管包括同时向第一和第二方向倾斜的衬底，在衬底上形成有第一导电类型的半导体材料的第一覆层，形成在第一覆层上的有源层和形成有第二覆层的第二覆层，在所述有源层上具有第二导电类型的半导体材料，其中在所述第一包层，所述第二包层和所述有源层的界面上形成凹凸。

3. 发明授权

US07767021B2 Growing method of SiC single crystal 失效
标题翻译： SiC单晶的生长方法
公开(公告)号：US07767021B2
公开(公告)日：2010-08-03
申请号：US11529115
申请日：2006-09-28
申请人： Soo-Hyung Seo , Joon-Suk Song , Myung-Hwan Oh
发明人： Soo-Hyung Seo , Joon-Suk Song , Myung-Hwan Oh
IPC分类号： C30B25/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of α-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.
摘要翻译： SiC单晶的生长方法包括以下步骤：用于降低比表面积的高纯度SiC源，并且增加α相的比例，并使C的摩尔分数大于源中的Si的摩尔分数，将SiC源提供到坩埚中，将SiC种子布置在坩埚中，并且通过加热SiC源来生长SiC单晶。

4. 发明申请

US20060192212A1 High brightness light emitting diode and fabrication method thereof 失效
标题翻译：高亮度发光二极管及其制造方法
公开(公告)号：US20060192212A1
公开(公告)日：2006-08-31
申请号：US11359798
申请日：2006-02-22
申请人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
发明人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/22 , Y10S438/973
摘要： A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.
摘要翻译：发光二极管包括同时向第一和第二方向倾斜的衬底，在衬底上形成有第一导电类型的半导体材料的第一覆层，形成在第一覆层上的有源层和形成有第二覆层的第二覆层，在所述有源层上具有第二导电类型的半导体材料，其中在所述第一包层，所述第二包层和所述有源层的界面上形成凹凸。

5. 发明授权

US07679165B2 High brightness light emitting diode with a bidirectionally angled substrate 失效
标题翻译：具有双向倾斜衬底的高亮度发光二极管
公开(公告)号：US07679165B2
公开(公告)日：2010-03-16
申请号：US12381238
申请日：2009-03-10
申请人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
发明人： Joon-Suk Song , Soo-Hyung Seo , Myung-Hwan Oh
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/06 , H01L29/04 , H01L21/00
CPC分类号： H01L33/16 , H01L33/22 , Y10S438/973
摘要： A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the (100) substrate is a III-V or a IV-IV group semiconductor substrate, and has a crystal orientation such that a (100) plane of the (100) substrate is inclined 2 to 20° toward the [0-1-1] direction and 1 to 8° toward the [0-11] direction.
摘要翻译：发光二极管包括同时向第一和第二方向倾斜的衬底，在衬底上形成有第一导电类型的半导体材料的第一覆层，形成在第一覆层上的有源层和形成有第二覆层的第二覆层，在所述有源层上具有第二导电类型的半导体材料，其中在所述第一包层，所述第二包层和所述有源层的界面上形成凹凸，并且所述（100）衬底为III-V或具有使（100）基板的（100）面朝向[0-1-1]方向倾斜2〜20°，朝向[0-1-1]方向1〜8°的晶体取向的晶体取向， 0-11]方向。

6. 发明申请

US20070068449A1 Growing method of SiC single crystal 失效
标题翻译： SiC单晶的生长方法
公开(公告)号：US20070068449A1
公开(公告)日：2007-03-29
申请号：US11529115
申请日：2006-09-28
申请人： Soo-Hyung Seo , Joon-Suk Song , Myung-Hwan Oh
发明人： Soo-Hyung Seo , Joon-Suk Song , Myung-Hwan Oh
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C30B29/36
摘要： A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of a-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.
摘要翻译： SiC单晶的生长方法包括以下步骤：用于降低比表面积的高纯度SiC源，并且增加a相的比例并使得C源的摩尔分数大于源中的Si的摩尔分数，将SiC源提供到坩埚中，将SiC种子布置在坩埚中，并且通过加热SiC源来生长SiC单晶。

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