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    • 1. 发明授权
    • Manufacturing method of non-volatile semiconductor memory devices
    • 非易失性半导体存储器件的制造方法
    • US5491101A
    • 1996-02-13
    • US348100
    • 1994-11-25
    • Kyoko MiyamotoFumihiko Noro
    • Kyoko MiyamotoFumihiko Noro
    • H01L21/336H01L27/115H01L21/8247
    • H01L29/66825H01L27/115
    • The invention provides a process to form on a certain conductive type semiconductor substrate 1 insulation layer 9 having openings 11, which regions will become source and drain; a process to form diffusion layer 8 of the same conductive type as semiconductor substrate 1 in to-be-drain space, with insulation layer 9 and photoresist 10 as masks; a process to form side wall layer 13 alongside openings of insulation layer 9; a process to form diffusion layers 4 and 5, conductive type of which layers is opposite to that of semiconductor substrate 1, in to-be-source and to-be-drain regions, with insulation layer 9 and side wall layer 13 as masks; a process to remove insulation layer 9 and side wall layer 13; and a process to form insulation layer 2 on semiconductor substrate in channel region distinguished by, and including part of, diffusion layers 4 and 5, and to form floating-gate electrode 3 on insulation layer 2, and control-gate electrode 7 with insulation layer 6 in between. The manufacturing method according to this invention forms drain and high density P-type diffusion layer by making use of side wall layer. Therefore, this makes it possible to shape DSA structure controlling the distance from drain to high density P-type diffusion layer with high accuracy, without using high temperature diffusion process. This means that this invention offers an easy way to make DSA structure with finer design rules.
    • 本发明提供一种在具有开口11的某种导电型半导体衬底1绝缘层9上形成的工艺,该区域将成为源极和漏极; 形成与待漏极空间中的半导体衬底1相同的导电类型的扩散层8的工艺,绝缘层9和光致抗蚀剂10作为掩模; 沿着绝缘层9的开口形成侧壁层13的工艺; 形成扩散层4和5的工艺,其导电类型的层与半导体衬底1的导电类型在源极和漏极区域中,绝缘层9和侧壁层13作为掩模; 去除绝缘层9和侧壁层13的工艺; 以及在由扩散层4和5区分并包括部分扩散层4和5的沟道区域中的半导体衬底上形成绝缘层2并在绝缘层2上形成浮栅电极3的绝缘层2和具有绝缘层的控制栅电极7的工艺 6之间。 根据本发明的制造方法通过利用侧壁层形成漏极和高密度P型扩散层。 因此,能够在不使用高温扩散处理的情况下,高精度地形成控制从漏极到高密度P型扩散层的距离的DSA结构。 这意味着本发明提供了使DSA结构具有更精细的设计规则的简单方法。