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1. 发明授权

US5491101A Manufacturing method of non-volatile semiconductor memory devices 失效
标题翻译：非易失性半导体存储器件的制造方法
公开(公告)号：US5491101A
公开(公告)日：1996-02-13
申请号：US348100
申请日：1994-11-25
申请人： Kyoko Miyamoto , Fumihiko Noro
发明人： Kyoko Miyamoto , Fumihiko Noro
IPC分类号： H01L21/336 , H01L27/115 , H01L21/8247
CPC分类号： H01L29/66825 , H01L27/115
摘要： The invention provides a process to form on a certain conductive type semiconductor substrate 1 insulation layer 9 having openings 11, which regions will become source and drain; a process to form diffusion layer 8 of the same conductive type as semiconductor substrate 1 in to-be-drain space, with insulation layer 9 and photoresist 10 as masks; a process to form side wall layer 13 alongside openings of insulation layer 9; a process to form diffusion layers 4 and 5, conductive type of which layers is opposite to that of semiconductor substrate 1, in to-be-source and to-be-drain regions, with insulation layer 9 and side wall layer 13 as masks; a process to remove insulation layer 9 and side wall layer 13; and a process to form insulation layer 2 on semiconductor substrate in channel region distinguished by, and including part of, diffusion layers 4 and 5, and to form floating-gate electrode 3 on insulation layer 2, and control-gate electrode 7 with insulation layer 6 in between. The manufacturing method according to this invention forms drain and high density P-type diffusion layer by making use of side wall layer. Therefore, this makes it possible to shape DSA structure controlling the distance from drain to high density P-type diffusion layer with high accuracy, without using high temperature diffusion process. This means that this invention offers an easy way to make DSA structure with finer design rules.
摘要翻译：本发明提供一种在具有开口11的某种导电型半导体衬底1绝缘层9上形成的工艺，该区域将成为源极和漏极; 形成与待漏极空间中的半导体衬底1相同的导电类型的扩散层8的工艺，绝缘层9和光致抗蚀剂10作为掩模; 沿着绝缘层9的开口形成侧壁层13的工艺; 形成扩散层4和5的工艺，其导电类型的层与半导体衬底1的导电类型在源极和漏极区域中，绝缘层9和侧壁层13作为掩模; 去除绝缘层9和侧壁层13的工艺; 以及在由扩散层4和5区分并包括部分扩散层4和5的沟道区域中的半导体衬底上形成绝缘层2并在绝缘层2上形成浮栅电极3的绝缘层2和具有绝缘层的控制栅电极7的工艺 6之间。根据本发明的制造方法通过利用侧壁层形成漏极和高密度P型扩散层。因此，能够在不使用高温扩散处理的情况下，高精度地形成控制从漏极到高密度P型扩散层的距离的DSA结构。这意味着本发明提供了使DSA结构具有更精细的设计规则的简单方法。

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