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1. 发明公开

US20240297681A1 METHOD AND APPARATUS FOR CHANNEL AGGREGATION AND SINGLE SIDEBAND TRANSMISSION 审中-公开
公开(公告)号：US20240297681A1
公开(公告)日：2024-09-05
申请号：US18592006
申请日：2024-02-29
申请人： IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative
发明人： Andrea MALIGNAGGI , Christoph HEROLD
IPC分类号： H04B1/68 , H04B1/30
CPC分类号： H04B1/68 , H04B1/302
摘要： A method for channel aggregation and single sideband transmission executed in a broad-band communication system is suggested in which only I and Q versions of a purely sinusoidal local oscillator signals are needed, easing the system scaling when large numbers of channels must be aggregated. In addition to that, instead of phase shifting of an intermediate frequency broadband signal rather two intermediate frequency broadband signals are generated, which are phase shifted by +90° or by −90°. As a result, the problems of frequency dependent phase shifting explained in the background section is not relevant for the method according to the present disclosure. Also, a corresponding method for image reject reception and channel separation as well as a transmitter and receiver for performing the methods are suggested.

2. 发明授权

US11092742B2 Photonic sensor chip, packaged photonic sensor device and arrangement 有权
公开(公告)号：US11092742B2
公开(公告)日：2021-08-17
申请号：US16718595
申请日：2019-12-18
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative
发明人： Patrick Steglich , Andreas Mai , Christian Mai
IPC分类号： G01N21/77 , G01N21/552 , G02B6/122 , G01N31/22 , G02B6/12
摘要： The invention relates to a photonic sensor chip comprising a semiconductor substrate with a cavity extending from a back side through an entire depth of the semiconductor substrate, a photonic plane located on the front side of the semiconductor substrate. The chip includes a photonic particle sensor element with an active-surface element having an exposed active surface facing towards the back side of the semiconductor substrate, for capturing selected particles from at least one fluid or gas to which the active surface is exposable. The cavity provides access to the active surface from the back side. The photonic particle sensor element receives an optical input wave via the photonic plane, to expose captured particles on the active-surface element to interaction with the optical input wave and to provide a resulting optical output wave having a spectral component indicative of the interaction between the optical input wave and captured particles.

3. 发明授权

US10833056B2 Electrooptical device 有权
公开(公告)号：US10833056B2
公开(公告)日：2020-11-10
申请号：US16222301
申请日：2018-12-17
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroelektronik , Technische Hochschule Wildau
发明人： Patrick Steglich , Andreas Mai , Christian Mai , Sigurd Schrader
IPC分类号： H01L31/048 , H01L31/18 , H01L25/16 , G02F1/035 , G02F1/025 , H01L23/31 , G02F1/361 , G02F1/065 , H01L31/049 , G02B6/122 , H01L25/065 , H01L27/146 , H01L23/66
摘要： The invention relates to an electrooptical device comprising a semiconductor substrate having a front side and a back side, at least one photonic component arranged on the front side of the semiconductor substrate, the photonic component comprising an active layer made of a non-linear optical material, wherein at least one cavity, extends through the semiconductor substrate and connects the active layer on the front side of the semiconductor substrate with the back side of the semiconductor substrate.

4. 发明授权

US10819349B2 Parallel fractional-N phase locked loop circuit 有权
$Parallel fractional-N phase locked loop circuit$
公开(公告)号：US10819349B2
公开(公告)日：2020-10-27
申请号：US16558724
申请日：2019-09-03
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroelektronik
发明人： Herman Jalli Ng , Dietmar Kissinger
IPC分类号： H03L7/087 , H03L7/081 , H03L7/23 , H03L7/197
摘要： Novel phase locked loop architectures that can overcome the limitation of the maximum operating frequency of the fractional-N phase-locked loop (PLL) for fast-chirp frequency modulated continuous wave (FMCW) radars are suggested. Several phase frequency detector and charge pumps (PFD&CPs) are put in parallel and are operated with reference signals that are generated by using a delay-locked loop (DLL) instead of further increasing the operating frequency of the PFD&CP. The proposed DLL supported parallel PLL architectures enable further speeding up the FMCW chirp as well as improving its linearity and the performance of Range Doppler Radars based on fast-chirp FMCW radar. Methods for operating the parallel fractional N phase locked loop are proposed.

5. 发明授权

US10658464B2 MOS transistor for radiation-tolerant digital CMOS circuits 有权
公开(公告)号：US10658464B2
公开(公告)日：2020-05-19
申请号：US15589085
申请日：2017-05-08
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative
发明人： Roland Sorge
IPC分类号： H01L29/10 , H01L29/78 , H01L29/417 , H01L29/06 , H01L29/08 , H01L29/66 , H01L21/8234 , H01L27/088 , H01L21/8238
摘要： A monolithically integrated MOS transistor, comprising a doped well region of a first conductivity type, an active MOS transistor region formed in the well region, comprising doped source and drain regions of a second conductivity type and at least one MOS channel region extending between the source and drain regions under a respective gate stack, and a dielectric isolation layer of the STI or LOCOS type and laterally surrounding same, wherein well portions of the well region adjoin the MOS channel region in the two opposite longitudinal directions oriented perpendicular to a notional connecting line extending from the source through the MOS channel region to the drain region, and which extend as far as a surface of the active MOS transistor region, so that the respective well portion adjoining the MOS channel region is arranged between the MOS channel region and the dielectric isolation layer.

6. 发明授权

US10403970B2 Chip antenna, electronic component, and method for producing same 有权
公开(公告)号：US10403970B2
公开(公告)日：2019-09-03
申请号：US14656000
申请日：2013-12-23
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelecktronik
发明人： Ruoyu Wang , Yaoming Sun , Johann Christoph Scheytt , Mehmet Kaynak
IPC分类号： H01Q1/38 , H01L23/66 , H01Q1/22 , H01Q1/42 , H01Q19/10 , H01Q21/00 , H01Q21/06 , H01L23/522
摘要： A chip antenna comprising at least one emitter which extends parallel to a main surface of a semiconductor substrate supporting the chip antenna, wherein the emitter is arranged on an island-like support zone of the semiconductor substrate, the support zone being surrounded by at least one trench which is completely filled with a gas, the trench passing through the entire depth of the semiconductor substrate and being bridged by at least one retaining web which forms a supporting connection between the support zone and the rest of the semiconductor substrate.

7. 发明授权

US10054722B2 Sub THZ to mid infrared tunable semiconductor plasmonics 有权
公开(公告)号：US10054722B2
公开(公告)日：2018-08-21
申请号：US15460604
申请日：2017-03-16
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut fur Innovative Mikroelektronik , Universitat Kassel
发明人： Subhajit Guha , Thomas Schroder , Bernd Witzigmann , Giovanni Capellini
IPC分类号： G02B5/00 , G01N21/55 , G01N21/35 , G02F1/01 , G01N21/552 , G02F1/015
CPC分类号： G02B5/008 , G01N21/35 , G01N21/3581 , G01N21/553 , G02F1/015 , G02F2203/10
摘要： A tunable plasmon resonator, comprising a plasmon resonance layer made of graphene, a crystalline group-IV-semiconductor material or a crystalline group-III-V semiconductor material, and arranged on a carrier substrate, the plasmon resonance layer having a plasmon resonance region that is exposed to a sensing volume and a tuning device that is integrated into the plasmon resonator and arranged and configured to modify a density of free charge carriers in the plasmon resonance region or to modify an effective mass amount of the free charge carriers in the plasmon resonance region by applying of a control voltage to tuning control electrode(s) of the tuning device, thereby setting a plasmon frequency of plasmon polaritons in the plasmon resonance region to a desired plasmon frequency value within a plasmon frequency tuning interval, for resonance excitation of plasmon polaritons by incident electromagnetic waves of a frequency corresponding to the set plasmon frequency value.

8. 发明授权

US10001601B2 Device for coupling a plurality of different fibre modes 有权
公开(公告)号：US10001601B2
公开(公告)日：2018-06-19
申请号：US14771631
申请日：2014-03-03
申请人： IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK
发明人： Benjamin Wohlfeil , Lars Zimmermann
IPC分类号： G02B6/12 , G02B6/26 , G02B6/293 , G02B6/124 , G02B6/14 , G02B6/30
CPC分类号： G02B6/268 , G02B6/124 , G02B6/14 , G02B6/29323 , G02B6/30 , G02B2006/12152 , G02B2006/12159
摘要： An integrated optical coupler device comprising, on a substrate surface: an integrated optical coupling grating extending in lateral directions parallel to the substrate surface and which, by diffraction at its grating structures, either converts electromagnetic waves, guided parallel to the substrate surface, of at least two waveguide modes of integrated optical waveguides into fiber modes propagating perpendicularly to the substrate surface, or converts electromagnetic waves, propagating perpendicularly to the substrate surface, of a fiber mode into electromagnetic waves, propagating parallel to the substrate surface, of at least two waveguide modes, and a first conductor pair, connected to the coupling grating and formed by a first and a second integrated optical waveguide, through which, in mutually opposite first and second directions parallel to the substrate surface, electromagnetic waves of at least two waveguide modes can be conducted to the coupling grating or can be conducted away from the coupling grating.

9. 发明授权

US09048052B2 Electromechanical microswitch for switching an electrical signal, microelectromechanical system, integrated circuit, and method for producing an integrated circuit 有权
标题翻译：用于切换电信号的机电微动开关，微机电系统，集成电路和用于制造集成电路的方法
公开(公告)号：US09048052B2
公开(公告)日：2015-06-02
申请号：US13514106
申请日：2010-12-07
申请人： Mehmet Kaynak , Mario Birkholz , Bernd Tillack , Karl-Ernst Ehwald , René Scholz
发明人： Mehmet Kaynak , Mario Birkholz , Bernd Tillack , Karl-Ernst Ehwald , René Scholz
IPC分类号： H01L23/48 , H01H59/00 , H01H1/00
CPC分类号： H01H59/0009 , H01H1/0036
摘要： The invention relates to a microelectromechanical system with an electromechanical microswitch for switching an electrical signal in particular a radio frequency signal, in particular in a GHz range, comprising a multi-level conductive path layer stack arranged on a substrate, wherein conductive paths of the multi-level conductive path layer stack arranged in different conductive levels are insulated from one another through electrically insulating layers and electrically connected with one another through via contacts, an electromechanical switch which is integrated in a recess of the multi-level conductive path layer stack and which includes a contact pivot, an opposite contact and at least one drive electrode for the contact pivot, wherein the contact pivot, the opposite contact and the at least one drive electrode respectively form a portion of a conductive level of the multi-level layer stack.
摘要翻译：本发明涉及一种具有机电微动开关的微电子机械系统，用于切换电信号，特别是用于特别是射频信号，特别是在GHz范围内的射频信号，包括布置在衬底上的多层导电路径层堆叠，其中多层导电路径布置在不同导电水平的高导电通路层堆叠通过电绝缘层彼此绝缘并且通过通孔触点彼此电连接，集成在多层导电路径层堆叠的凹部中的机电开关，包括接触枢轴，相对的接触件和用于接触枢轴的至少一个驱动电极，其中所述接触枢轴，所述相对接触件和所述至少一个驱动电极分别形成所述多层层叠层的导电层的一部分。

10. 发明授权

US08933537B2 Bipolar transistor having self-adjusted emitter contact 有权
标题翻译：具有自调节发射极接触的双极晶体管
公开(公告)号：US08933537B2
公开(公告)日：2015-01-13
申请号：US12998869
申请日：2009-12-03
申请人： Alexander Fox , Bernd Heinemann , Steffen Marschmeyer
发明人： Alexander Fox , Bernd Heinemann , Steffen Marschmeyer
IPC分类号： H01L27/102 , H01L29/66 , H01L29/08 , H01L29/10 , H01L29/161 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66242 , H01L21/8222 , H01L21/8249 , H01L29/0804 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/161 , H01L29/66272 , H01L29/7322 , H01L29/7371
摘要： A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein the base connection region, aside from a seeding layer adjacent the substrate or a metallization layer adjacent a base contact, consists of a semiconductor material which differs in its chemical composition from the semiconductor material of the collector, the base and the emitter and in which the majority charge carriers of the first conductivity type have greater mobility compared thereto.
摘要翻译：一种半导体器件，包括由第一导电类型的半导体材料制成并具有第一绝缘区域的衬底层和垂直双极晶体管，其具有由第二导电类型的单晶半导体材料制成的集电体的第一垂直部分，并且被布置在第一绝缘区域的开口中，第二绝缘区域部分地位于集电器的第一垂直部分上并且部分地位于第一绝缘区域上并且在集电器的区域中具有开口，其中开口的第二垂直部分设置由单晶材料构成的集电体，所述部分包括第二导电类型的内部区域，由第一导电类型的单晶半导体材料制成的基底，在横向方向上围绕基底的基极连接区域，T形发射极由第二导电类型的半导体材料制成并与基底连接重叠其中基底连接区域除了与基底相邻的晶种层或邻近基极接触处的金属化层组成，其半导体材料的化学成分不同于集电极，基极和发射极的半导体材料并且其中第一导电类型的多数电荷载流子具有比其更大的迁移率。

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