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    • 3. 发明申请
    • Method for the Selective Doping of Silicon and Silicon Substrate Treated Therewith
    • 用于处理硅和硅衬底的选择性掺杂的方法
    • US20110114168A1
    • 2011-05-19
    • US12903804
    • 2010-10-13
    • Dirk Habermann
    • Dirk Habermann
    • H01L31/0224H01L31/0216
    • H01L31/1804H01L21/2255H01L31/022425H01L31/068Y02E10/547Y02P70/521
    • A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.
    • 用于在硅中制造pn结的硅衬底(1)的硅的选择性掺杂的方法的特征在于以下步骤:a)用硅掺杂剂(2)提供硅衬底(1)的表面, 基于磷,b)加热用于在硅表面上产生磷硅酸盐玻璃(2)的硅衬底(1),其中磷作为第一掺杂(3)扩散到硅中,c)施加掩模(4) )覆盖磷酸硅玻璃(2),覆盖稍后被高度掺杂的区域(5),d)去除非掩蔽区域中的磷硅酸盐玻璃(2),e)从磷中去除掩模(4) 硅酸盐玻璃(2),f)再次加热用于将磷从磷硅酸盐玻璃(2)进一步扩散到硅中作为用于产生高掺杂区(5)的第二掺杂,g); 从硅中完全除去磷酸硅玻璃(2)。
    • 4. 发明授权
    • Device and method for treating the surfaces of substrates
    • 用于处理基材表面的装置和方法
    • US07862661B2
    • 2011-01-04
    • US12138125
    • 2008-06-12
    • Heinz Kappler
    • Heinz Kappler
    • B05D1/28
    • H01L21/67706H01L21/67017H01L21/67023H01L21/67075H01L21/6708H01L21/67721H01L21/6776
    • The invention relates to a device for treating the surfaces of silicon wafers, comprising transport rollers for transporting the silicon wafer, and at least one conveyor device which wets the surface of the silicon wafer with an aqueous medium on a transport plane which is determined by the transport rollers. The conveyor device is configured such that it can apply the process medium to the surface of the silicon wafer, which is oriented in a downward manner and which is arranged on the transport plane. Several suction pipes for suctioning gaseous or mist-like distributed process mediums from the area surrounding the conveyor device are provided. The suction pipes are arranged in the vertical direction below the transport plane.
    • 本发明涉及一种用于处理硅晶片表面的装置,包括用于输送硅晶片的输送辊和至少一个输送装置,该输送装置用输送平面上的水性介质润湿硅晶片的表面,该输送装置由 运输辊。 输送装置被配置成使得其可以将处理介质施加到硅晶片的表面,该硅晶片的表面以向下的方式定向并且布置在输送平面上。 提供了用于从输送装置周围的区域抽吸气态或雾状分布式处理介质的多个吸管。 吸入管沿着输送平面下方的垂直方向排列。
    • 5. 发明授权
    • Apparatus for treating plate-shaped articles
    • 用于处理板形文章的装置
    • US5154772A
    • 1992-10-13
    • US545390
    • 1990-06-27
    • Karl-Heinz Kallfass
    • Karl-Heinz Kallfass
    • B23K3/06H05K3/00
    • H05K3/0085B23K3/0646Y10S277/906
    • In an apparatus for treating plate-shaped articles in a liquid medium including a bath containing the liquid medium with gap-like inlet and outlet openings arranged beneath the liquid level and a conveying device for conveying the plate-shaped articles along a substantially flat path of conveyance through the inlet and outlet openings and through the liquid medium in the bath, in order to reduce the loss of liquid from the bath, it is proposed that the inlet and outlet openings comprise sealing elements which are movable from a closed to an open position as the plate-shaped articles pass through them and which are furthermore of such design that the gap created by the sealing elements in their open position is substantially adaptable in height and width to the cross-section of the articles passing through it.
    • 一种用于处理液体介质的液体介质的设备,该液体介质包括含有液体介质的浴,所述液体介质具有布置在液面下方的间隙形入口和出口开口;以及传送装置,用于沿着基本平坦的路径传送板状物品 通过入口和出口开口并通过浴中的液体介质的输送,为了减少液体从浴中的损失,提出了入口和出口开口包括可从闭合位置移动到打开位置的密封元件 因为板状制品穿过它们,并且还具有这样的设计,使得由密封元件在其打开位置产生的间隙在通过其的制品的横截面上在高度和宽度上基本适应。
    • 10. 发明授权
    • Method and device for the introduction of planar substrates into a receiving container
    • 用于将平面基板引入接收容器的方法和装置
    • US07267522B2
    • 2007-09-11
    • US10494773
    • 2002-10-29
    • Heinz Kappler
    • Heinz Kappler
    • A01D90/08B65G57/00B65H29/32
    • H05K13/0061
    • One embodiment of the invention is a method for placing circuit boards in a receiving container, comprising the following steps: a) gripping and lifting a circuit board with a first grappling device, b) moving the first grappling device and the receiving container relative to each other, such that the receiving container is located below the first grappling device, c) the first grappling device lowers the circuit board into the receiving container, d) gripping and lifting a partition layer from a dispenser with a second grappling device, e) reversion to step b), such that the receiving container is accessible from above and is below the second grappling device, f) the partition layer is placed in the receiving container on top of the previously placed circuit board and g) start the process at a).
    • 本发明的一个实施例是一种用于将电路板放置在接收容器中的方法,包括以下步骤:a)用第一抓取装置夹持和提起电路板,b)相对于每一个移动第一抓取装置和接收容器 另一方面,使得接收容器位于第一抓钩装置下方,c)第一抓取装置将电路板降低到接收容器中,d)用具有第二抓取装置的分配器抓住并提起分隔层,e)回复 到步骤b),使得接收容器可以从上方接近并且位于第二抓斗装置下方,f)分隔层被放置在接收容器中,位于先前放置的电路板的顶部,并且g)在a)开始该过程, 。