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1. 发明授权

US10397676B2 Speaker module 有权
公开(公告)号：US10397676B2
公开(公告)日：2019-08-27
申请号：US15542866
申请日：2015-11-18
申请人： Goertek.Inc
发明人： Minghui Shao , Jianbin Yang
IPC分类号： H04R1/02 , H04R7/12 , H04R7/18 , H04R9/02 , H04R9/06 , H04R31/00 , B29C45/00 , B29K105/16 , B29L31/34
摘要： The present invention discloses a speaker module, comprising: a speaker assembly, a module shell and a front cover. The module shell is configured to bear the speaker assembly, and comprises a first shell and a second shell, wherein the first shell is doped with a thermally conductive filler. The front cover is configured to cooperate with the module shell to encapsulate the speaker assembly. The speaker module provided by the present invention can quickly discharge heat generated by the speaker assembly during operation through the module shell to prevent overheat of the speaker assembly, thereby avoiding performance loss of a speaker due to high temperature.

2. 发明授权

US10273150B2 Integrated structure of MEMS microphone and pressure sensor and manufacturing method for the integrated structure 有权
公开(公告)号：US10273150B2
公开(公告)日：2019-04-30
申请号：US15554653
申请日：2015-12-14
申请人： Goertek.Inc
发明人： Yanmei Sun
IPC分类号： H04R31/00 , G01L7/08 , B81B7/02 , H04R19/04 , B81C1/00 , H04R19/00
摘要： The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.

3. 发明授权

US10063208B2 Speaker device and method for reducing distortion degree of speaker 有权
公开(公告)号：US10063208B2
公开(公告)日：2018-08-28
申请号：US15551244
申请日：2015-11-16
申请人： Goertek.Inc
发明人： Dan Han , Yun Yang
IPC分类号： H03G11/04 , H04R3/00 , H04R9/06 , H04R29/00
CPC分类号： H03G11/04 , H04R3/00 , H04R3/08 , H04R9/041 , H04R9/06 , H04R29/001 , H04R29/003 , H04R2499/11
摘要： The present invention discloses a speaker device and electronic equipment. The speaker device comprises a speaker body, an audio signal input terminal connected with the speaker body, and a DC voltage signal input terminal connected with the speaker body. The electronic equipment comprises the speaker device and a DC voltage signal output circuit. The present invention further discloses a method for reducing a low frequency distortion degree of the speaker of the electronic equipment, and the method is realized by additionally providing a DC voltage signal to the input end of the speaker. In the present invention, a distortion degree of the speaker device at a low-frequency working condition can be reduced, and inconsistency of low frequency distortion of the speaker device, caused by mass production, can be reduced.

4. 发明授权

US10533911B2 Signal processing device, air pressure sensor assembly and electronics apparatus 有权
公开(公告)号：US10533911B2
公开(公告)日：2020-01-14
申请号：US15553093
申请日：2016-11-04
申请人： GOERTEK.INC
发明人： Li-Te Wu , Ching-Tzung Lin , Ssu-Ying Chen
IPC分类号： G01L19/00 , G01L9/00 , G01C5/06
摘要： The present invention discloses a signal processing device, an air pressure sensor assembly and an electronics apparatus. The signal processing device for a sensing signal comprises: an input unit, which is configured to receive the sensing signal; and a processing unit, which is configured to attenuate a higher frequency component of the sensing signal so that the value of the higher frequency component when the sensing signal is stable is lower than that when the sensing signal is changing. According to an embodiment of this invention, the present invention can reduce the noise in a sensing signal from an air pressure sensor during a stable state.

5. 发明授权

US10277968B2 Microphone with dustproof through holes 有权
公开(公告)号：US10277968B2
公开(公告)日：2019-04-30
申请号：US15521151
申请日：2015-01-05
申请人： Goertek.Inc
发明人： Guanxun Qiu , Qinglin Song
IPC分类号： H04R25/00 , H04R1/08 , H04R19/00 , H04R19/04 , H04R1/02
摘要： The present invention discloses a microphone, comprises: a silicon substrate; a diaphragm disposed over the silicon substrate; a backplate disposed over the diaphragm, the backplate having a plurality of through holes formed therein and a barrier structure, and the plurality of through holes being arranged in a through hole pattern on the backplate; the barrier structure having one or more protruding portions extending from at least one part of the through hole wall of the barrier structure, thereby the section shape of at least one through hole being an irregular shape with one or more inwardly concave portion. The microphone provided by the present invention can achieve a better dustproof effect.

6. 发明授权

US10264360B2 Structure for detecting vibration displacement of a speaker and acoustoelectric inter-conversion dual-effect device 有权
公开(公告)号：US10264360B2
公开(公告)日：2019-04-16
申请号：US15551262
申请日：2015-11-26
申请人： Goertek.Inc
发明人： Minghui Shao , Jianbin Yang
IPC分类号： H04R9/06 , H04R3/00 , H04R7/06 , H04R7/18 , H04R9/02 , H04R29/00 , H04R31/00 , H04R19/01
摘要： Disclosed is a structure for detecting the vibration displacement of a speaker, including: a vibration system having a movable pole plate; a magnetic circuit system; and a fixed pole plate provided under the vibration system and opposite to the movable pole plate, the movable pole plate and the fixed pole plate constituting a capacitor. Also disclosed is an acoustoelectric inter-conversion dual-effect device, further including an impedance transformer connected to the capacitor and including a field effect transistor and a diode. In the present invention, a movable pole plate of a capacitor is provided on a vibration system and a fixed pole plate is provided under the vibration system and fixed in position. When the vibration system vibrates, the change in capacitance is detected to calculate the actual displacement of the vibration system, which can reduce the power of the speaker device when the actual displacement of the vibration system exceeds a safety threshold. For an electronic device adopting such a speaker structure, the displacement of the vibration system of a speaker product can be detected in real time at the system end of the electronic device.

7. 发明授权

US10250962B2 Package structure of MEMS microphone 有权
公开(公告)号：US10250962B2
公开(公告)日：2019-04-02
申请号：US15554980
申请日：2015-12-10
申请人： GOERTEK.INC
发明人： Guoguang Zheng
IPC分类号： H04R1/04 , H04R19/00 , H04R19/04 , H04R31/00
摘要： The present invention discloses a package structure of a MEMS microphone. The package structure comprises a closed inner cavity formed by a package shell in a surrounding manner, as well as a MEMS chip and an ASIC chip which are located in the closed inner cavity, wherein a sound hole allowing sound to flow into the closed inner cavity is formed in the package shell; the MEMS chip comprises a substrate as well as a vibrating diaphragm and a back plate which are provided on the substrate; the vibrating diaphragm divides the closed inner cavity into a front cavity and a back cavity; and a sound-absorbing structure is provided in the back cavity.

8. 发明授权

US10170665B2 Repairing method, manufacturing method, device and electronics apparatus of micro-LED 有权
公开(公告)号：US10170665B2
公开(公告)日：2019-01-01
申请号：US15559778
申请日：2015-09-09
申请人： Goertek.Inc
发明人： Quanbo Zou , Zhe Wang
IPC分类号： H01L21/00 , H01L33/00 , H01L33/62 , H01L23/00 , H01L25/13 , H01L33/48 , H01L25/075
摘要： The present invention discloses a repairing method, manufacturing method, device and electronics apparatus of micro-LED. The method for repairing a micro-LED comprises: bringing a known-good micro-LED on a conductive pick-up head into contact with a first pad on an defective position of a receiving substrate, wherein the conductive pick-up head and the known-good micro-LED are bonded via a conductive adhesive; locally joule heating a first bonding layer through the conductive pick-up head, to melt the first bonding layer, wherein the first bonding layer is provided between the known-good micro-LED and the first pad; and lifting up the conductive pick-up head after the first bonding layer is cooled, leaving the known-good micro-LED on the receiving substrate.

9. 发明授权

US10495535B2 Differential capacitive MEMS pressure sensor and manufacturing method thereof 有权
公开(公告)号：US10495535B2
公开(公告)日：2019-12-03
申请号：US15559331
申请日：2015-12-10
申请人： GOERTEK.INC
发明人： Guoguang Zheng
IPC分类号： G01L9/12 , B81B7/02
CPC分类号： G01L9/12 , B81B7/02 , B81B2201/0264
摘要： The present invention discloses a differential capacitive MEMS pressure sensor and a manufacturing method thereof. The MEMS pressure sensor includes a sensitive structural layer, which includes a common sensitive part and a common supporting part located on the edge of the common sensitive part, a thickness of the common supporting part being larger than that of the common sensitive part; and the MEMS pressure sensor also includes an upper fixed electrode structural layer and a lower fixed electrode structural layer which are vertically symmetric relative to the sensitive structural layer and used for forming differential capacitors with the common sensitive part. According to the MEMS pressure sensor of the present invention, by the differential capacitor structures, inhibition of chips on common-mode signals is enhanced, and a signal to noise ratio of output signals is improved. Meanwhile, the thickness of the common supporting part of the present invention is larger than that of the common sensitive part, such that the peripheral common supporting part can shield strains caused by temperatures and stresses. Therefore, the strains transmitted to the common sensitive part because of temperature and stress changes are greatly reduced, and temperature stability and stress stability of the chips are improved.

10. 发明授权

US10407300B2 Integrated structure of mems pressure sensor and mems inertia sensor 有权
公开(公告)号：US10407300B2
公开(公告)日：2019-09-10
申请号：US15554652
申请日：2015-12-14
申请人： Goertek.Inc
发明人： Guoguang Zheng
IPC分类号： B81B7/02 , G01L9/12 , G01P15/125 , G01P15/02 , B81B3/00 , B81B7/00 , B81C1/00 , G01L19/04
摘要： An integrated structure of an MEMS pressure sensor and an MEMS inertia sensor are provided, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate.

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