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1. 发明授权

US6069376A Intra-pixel frame storage element, array, and electronic shutter method including speed switch suitable for electronic still camera applications 失效
标题翻译：像素内帧存储元件，阵列和电子快门方法，包括适用于电子静态照相机应用的速度开关
公开(公告)号：US6069376A
公开(公告)日：2000-05-30
申请号：US48921
申请日：1998-03-26
申请人： Richard B. Merrill
发明人： Richard B. Merrill
IPC分类号： H01L27/146 , H04N5/353 , H04N5/374 , H04N5/3745 , H01L31/062 , H01L31/113
CPC分类号： H04N5/353 , H01L27/14609 , H01L27/14623 , H04N5/37452 , H04N5/374
摘要： A storage pixel sensor disposed on a semiconductor substrate comprises a MOS capacitor storage element having a diffusion terminal and a gate terminal. A speed node is connected to the diffusion terminal and biased at either a first control potential or a second control potential, the first potential selected to keep the MOS capacitor in a state of inversion, the second potential selected to keep the MOS capacitor in a state of depletion. A photodiode has an anode connected to a reference potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset reference potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the gate terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the gate terminal of the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over a portion of the semiconductor substrate including the second terminal of the semiconductor transfer switch to prevent substantially all photons from entering the portion of the semiconductor substrate. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the portion of the semiconductor substrate. A plurality of storage pixel sensors are disposed in an array.
摘要翻译：设置在半导体衬底上的存储像素传感器包括具有扩散端子和栅极端子的MOS电容器存储元件。速度节点连接到扩散端并被偏置在第一控制电位或第二控制电位，所选择的第一电位用于保持MOS电容处于反相状态，所选择的第二电位使MOS电容保持在一个状态的消耗。光电二极管具有连接到参考电位的阳极和阴极。半导体复位开关具有连接到阴极的第一端子和连接到复位参考电位的第二端子。半导体转移开关具有连接到阴极的第一端子和连接到电容性存储元件的栅极端子的第二端子。半导体放大器具有连接到电容性存储元件的栅极端子的输入端和输出端。半导体复位开关和半导体转移开关各自具有连接到用于选择性地激活半导体复位开关和半导体转移开关的控制电路的控制元件。在包括半导体转移开关的第二端子的半导体衬底的一部分上设置有光屏蔽，以防止基本上所有的光子进入半导体衬底的部分。存在用于防止在半导体衬底中产生的基本上所有少数载流子进入半导体衬底部分的结构。多个存储像素传感器被布置成阵列。

2. 发明授权

US5747840A Photodiode with improved photoresponse behavior 失效
标题翻译：具有改善光响应行为的光电二极管
公开(公告)号：US5747840A
公开(公告)日：1998-05-05
申请号：US734114
申请日：1996-10-21
申请人： Richard Billings Merrill
发明人： Richard Billings Merrill
IPC分类号： H01L31/0352 , H01L31/103 , H01L31/06
CPC分类号： H01L31/0352 , H01L31/103
摘要： The quantum efficiency of a photodiode is substantially increased by forming the photodiode on a heavily-doped layer of semiconductor material which, in turn, is formed on a semiconductor substrate. The heavily-doped layer of semiconductor material tends to repel information carriers in the photodiode from being lost to the substrate, and prevents noise carriers from the substrate from diffusing up into the photodiode. In addition, the red and blue photoresponses are balanced by adjusting the depth of the photodiode.
摘要翻译：通过在半导体材料的重掺杂层上形成光电二极管，进而在半导体衬底上形成光电二极管的量子效率。半导体材料的重掺杂倾向于排斥光电二极管中的信息载体丢失到衬底，并且防止来自衬底的噪声载流子向上扩散到光电二极管中。此外，通过调整光电二极管的深度来平衡红色和蓝色光响应。

3. 发明授权

US5892253A Active pixel sensor cell with balanced blue response and reduced noise 失效
标题翻译：有源像素传感器单元具有平衡的蓝色响应和降低的噪声
公开(公告)号：US5892253A
公开(公告)日：1999-04-06
申请号：US824451
申请日：1997-03-26
申请人： Richard Billings Merrill
发明人： Richard Billings Merrill
IPC分类号： H01L27/146 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609
摘要： In an active pixel sensor cell, the blue response of the cell is balanced by utilizing a photodiode in lieu of a photogate, and the noise is reduced by quickly reading the voltage on a node, transferring the collected charge from the photodiode onto the node, and then again reading the voltage on the node.
摘要翻译：在有源像素传感器单元中，通过利用光电二极管代替光栅平衡单元的蓝色响应，并且通过快速读取节点上的电压并将收集的电荷从光电二极管传送到节点上而降低噪声，然后再次读取节点上的电压。

4. 发明授权

US5880460A Active pixel sensor cell that reduces noise in the photo information extracted from the cell 失效
标题翻译：有源像素传感器单元，其减少从单元提取的照片信息中的噪声
公开(公告)号：US5880460A
公开(公告)日：1999-03-09
申请号：US871519
申请日：1997-06-09
申请人： Richard Billings Merrill
发明人： Richard Billings Merrill
IPC分类号： H04N5/357 , H04N5/335
CPC分类号： H04N5/3577 , H04N3/155 , H04N3/1568
摘要： The noise in the photo information output from a CMOS-based active pixel sensor cell is reduced by setting the voltage on the output of the cell to a predetermined voltage, such as ground or the power supply voltage, each time the cell is read prior to the cell being read.
摘要翻译：通过将单元的输出上的电压设置为预定电压（例如接地或电源电压），每次在单元读取之前，通过将基于CMOS的有源像素传感器单元输出的照片信息中的噪声降低正在读取单元格。

5. 发明授权

US5786623A Bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region 失效
标题翻译：具有金属接触的双极性有源像素传感器单元，并增加与基极区域的电容耦合
公开(公告)号：US5786623A
公开(公告)日：1998-07-28
申请号：US735009
申请日：1996-10-22
申请人： Albert Bergemont , Min-hwa Chi
发明人： Albert Bergemont , Min-hwa Chi
IPC分类号： H01L27/146 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L27/14643 , H01L27/14681
摘要： The dynamic range is increased and the noise level is reduced in a bipolar-based active pixel sensor cell with a capacitively coupled base region by forming the capacitor over a portion of the base region and the field oxide region of the cell. In addition, the noise levels are also reduced by heavily-doping the material which forms a portion of the bottom plate of the capacitor with the same conductivity type as the base region of the cell, and by placing the material which forms the portion of the bottom plate in direct contact with the base region.
摘要翻译：通过在电池的基极区域和场氧化物区域的一部分上形成电容器，动态范围增加，并且通过在具有电容耦合的基极区域的基于双极的有源像素传感器单元中降低噪声水平。此外，通过以与电池的基底区域相同的导电类型重叠掺杂形成电容器的底板的一部分的材料，并且通过将形成底板与基座区域直接接触。

6. 发明授权

US6137127A Low leakage active pixel using spacer protective mask compatible with CMOS process 失效
标题翻译：低泄漏有源像素使用与CMOS工艺兼容的间隔保护掩模
公开(公告)号：US6137127A
公开(公告)日：2000-10-24
申请号：US908266
申请日：1997-08-07
申请人： Richard B. Merrill
发明人： Richard B. Merrill
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/062 , H01L27/148
CPC分类号： H01L27/14643 , H01L27/14609 , H01L31/022408
摘要： A pixel cell structure having a nonsilicided photodiode overcomes problems associated with the absorption of incident light by silicided surfaces. Furthermore, a photodiode access transistor having a partially silicided gate is interposed between the photodiode and the pixel cell transistors performing reset and row select functions, thereby allowing isolation of the photodiode from leakage associated with silicided junctions. Selective application of voltage to the transistors of the pixel structure according to a clocking sequence permits interaction of the photodiode and the MOS transistors making up the pixel cell, while minimizing exposure of the photodiode to leakage and stress associated with these silicided MOS transistors.
摘要翻译：具有非硅化光电二极管的像素单元结构克服了与硅化物表面吸收入射光有关的问题。此外，具有部分硅化栅极的光电二极管存取晶体管插入在光电二极管和执行复位和行选择功能的像素单元晶体管之间，从而允许光电二极管与硅化物结的泄漏隔离。根据时钟顺序对像素结构的晶体管选择性地施加电压允许构成像素单元的光电二极管和MOS晶体管的相互作用，同时最小化光电二极管暴露于与这些硅化MOS晶体管相关联的泄漏和应力。

7. 发明授权

US6011295A Neural network active pixel cell 失效
标题翻译：神经网络有源像素单元
公开(公告)号：US6011295A
公开(公告)日：2000-01-04
申请号：US898062
申请日：1997-07-22
申请人： Richard Billings Merrill , Albert Bergemont , Min-hwa Chi
发明人： Richard Billings Merrill , Albert Bergemont , Min-hwa Chi
IPC分类号： G06N3/063 , G06G7/16
CPC分类号： G06N3/0635
摘要： An active pixel image cell which includes a photosensor, active devices for control of the sensor and readout of a signal representing the intensity of light to which the sensor is exposed, and a neuron MOSFET transistor which "both amplifies the signal from the photosensor and" simulates the behavior of a human neuron. An integrated neural network and imaging array may be formed by interconnecting a group of such pixels. Digital signal processing algorithms used for image processing may be implemented at the pixel level by appropriate interconnections between the output signals from the photosensor of surrounding pixels and the neuron MOSFET.
摘要翻译：包括光传感器的有源像素图像单元，用于控制传感器的有源器件和表示传感器所暴露的光的强度的信号的读出，以及“两者都放大来自光电传感器的信号”的神经元晶体管，模拟人类神经元的行为。可以通过将一组这样的像素互连来形成集成神经网络和成像阵列。用于图像处理的数字信号处理算法可以通过来自周围像素的光电传感器的输出信号和神经元MOSFET之间的适当互连在像素级上实现。

8. 发明授权

US5841176A Active pixel sensor cell that minimizes leakage current 失效
标题翻译：有源像素传感器单元，使漏电流最小化
公开(公告)号：US5841176A
公开(公告)日：1998-11-24
申请号：US850604
申请日：1997-05-02
申请人： Richard Billings Merrill
发明人： Richard Billings Merrill
IPC分类号： H01L27/146 , H01L31/103 , H01L31/0352 , H01L31/09
CPC分类号： H01L31/103 , H01L27/14603 , H01L27/14609 , H01L27/1463
摘要： Isolation between the heavily-doped active regions of an active pixel sensor cell is provided by utilizing a series of isolation regions which have a doping concentration that is approximately equal to the doping concentration of a low-density drain (LDD) region. A first isolation region of the series, which has the same conductivity type as the active regions, is formed to adjoin a first active region. A second isolation region of the series, which has the opposite conductivity type as the active regions, is formed to adjoin the first isolation region. A third isolation region, which has the same conductivity type as the active regions, is formed to adjoin the second isolation region and a second active region.
摘要翻译：通过利用具有近似等于低密度漏极（LDD）区域的掺杂浓度的掺杂浓度的一系列隔离区来提供有源像素传感器单元的重掺杂有源区之间的隔离。形成具有与有源区相同的导电类型的该系列的第一隔离区，以邻接第一有源区。形成具有与有源区相反的导电类型的该系列的第二隔离区，以邻接第一隔离区。形成具有与有源区相同的导电类型的第三隔离区，以邻接第二隔离区和第二有源区。

9. 发明授权

US5789774A Active pixel sensor cell that minimizes leakage current 失效
标题翻译：有源像素传感器单元，使漏电流最小化
公开(公告)号：US5789774A
公开(公告)日：1998-08-04
申请号：US855961
申请日：1997-05-14
申请人： Richard Billings Merrill
发明人： Richard Billings Merrill
IPC分类号： H01L27/146 , H01L31/103 , H01L29/04 , H01L27/148 , H01L31/00 , H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1463 , H01L31/103
摘要： The leakage current at the silicon-to-silicon dioxide interfaces of an active pixel sensor cell is substantially reduced by eliminating field oxide from the cell, and by insuring that, during integration, every surface region of the cell that is not heavily doped is either biased into accumulation or biased into inversion. Each of these states, in turn, substantially limits the number of electrons from thermally-generated electron-hole pairs at the surface that can contribute to the leakage current.
摘要翻译：有源像素传感器单元的硅 - 二氧化硅界面处的漏电流通过从单元中消除场氧化物而大大减少，并且通过确保在积分期间，未重掺杂的单元的每个表面区域是偏向积累或偏向倒置。这些状态中的每一个又进一步限制了可能有助于漏电流的表面处的热生成电子 - 空穴对的电子数。

10. 发明授权

US5854498A Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell 失效
标题翻译：有源像素传感器单元减少了1 / f噪声的影响，增加了电池的电压范围，并减小了电池的尺寸
公开(公告)号：US5854498A
公开(公告)日：1998-12-29
申请号：US28125
申请日：1998-02-23
申请人： Richard Billings Merrill
发明人： Richard Billings Merrill
IPC分类号： H01L27/146 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14643
摘要： The accuracy of an active pixel sensor cell is increased by utilizing a reset diode in lieu of the reset transistor that is conventionally used to reset the voltage on the photodiode of the cell. The reset diode, which is largely unaffected by 1/f noise, consistently resets the photodiode to a substantially constant voltage as opposed to the reset transistor which varies the reset voltage on the photodiode across integration periods due to the effect of 1/f noise. In the present invention, the photodiode is formed by forming a well region of a second conductivity type in a substrate of a first conductivity type. The reset diode is then formed by forming a reset region of the first conductivity type in the well region.
摘要翻译：有源像素传感器单元的精度通过利用复位二极管代替常规用于复位电池的光电二极管上的电压的复位晶体管来增加。很大程度上不受1 / f噪声影响的复位二极管将一致地将光电二极管重置为基本上恒定的电压，这与由于1 / f噪声的影响而在整个周期上改变光电二极管上复位电压的复位晶体管相反。在本发明中，通过在第一导电类型的衬底中形成第二导电类型的阱区而形成光电二极管。然后通过在阱区域中形成第一导电类型的复位区域来形成复位二极管。

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