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1. 发明授权

US08896075B2 Semiconductor radiation detector with thin film platinum alloyed electrode 有权
标题翻译：半导体辐射探测器与薄膜铂合金电极
公开(公告)号：US08896075B2
公开(公告)日：2014-11-25
申请号：US12358393
申请日：2009-01-23
申请人： Gary L. Smith , Csaba Szeles
发明人： Gary L. Smith , Csaba Szeles
IPC分类号： H01L31/00 , H01L31/0224 , H01L27/146
CPC分类号： H01L31/0224 , H01L27/14676
摘要： A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.
摘要翻译：化合物半导体辐射检测器包括在其至少一个表面上具有电极的化合物半导体材料体。电极包括第一元件和第二元件的化合物层。第一元素是铂，第二元素包括以下中的至少一种：铬，钴，镓，锗，铟，钼，镍，钯，钌，硅，银，钽，钛，钨，钒，锆，，铁，镁，铜，锡或金。层可以进一步包括子层，每个子层由第二元素中的不同的一个和作为第一元素的铂制成。

2. 发明申请

US20110101231A1 COUNT CORRECTION IN A PHOTON COUNTING IMAGING SYSTEM 有权
标题翻译：光子计数成像系统中的计数校正
公开(公告)号：US20110101231A1
公开(公告)日：2011-05-05
申请号：US12865218
申请日：2009-06-11
申请人： David S. Rundle
发明人： David S. Rundle
IPC分类号： H05G1/60
CPC分类号： G01T7/005 , A61B6/00
摘要： In a method of count correction for pixels of a pixilated photon counting detector, the average count value output by each of a plurality of pixels during a period of time is determined. A product is determined of the actual average count value and a multiplying correction factor. A corrected count value is then determined for the pixel equal to a sum of the product and an additive correction factor. The multiplying correction factor equals a square root of a quotient of a desired average count value to be output by each of the plurality of pixels during the period of time divided by the actual average count value. The additive correction factor equals a product of the multiplying correction factor and the actual average count value subtracted from the desired average count value.
摘要翻译：在像素化光子计数检测器的像素的计数校正方法中，确定在一段时间内由多个像素中的每一个输出的平均计数值。确定产品的实际平均计数值和乘法校正系数。然后，对于等于乘积和加法校正因子的和的像素，确定校正后的计数值。乘法校正因子等于在时间段内除以实际平均计数值之前要由多个像素中的每一个输出的期望平均计数值的商的平方根。加法校正因子等于乘法校正因子与从期望的平均计数值中减去的实际平均计数值的乘积。

3. 发明授权

US09318627B2 Semiconductor radiation detector 有权
标题翻译：半导体辐射探测器
公开(公告)号：US09318627B2
公开(公告)日：2016-04-19
申请号：US14223114
申请日：2014-03-24
申请人： eV Products, Inc.
发明人： Handong Li , Michael Prokesch , John F. Eger
IPC分类号： H01L31/0224 , H01L27/146 , H01L31/08 , H01L31/18
CPC分类号： H01L31/022408 , H01L27/14676 , H01L27/14696 , H01L31/085 , H01L31/1828 , Y02E10/543
摘要： A semiconductor radiation detector having a semiconductor substrate and first and second metal layers. The semiconductor substrate has substantially planar upper and lower opposing surfaces which have respective first and second surface areas. The first and second surface areas are defined by prospective dice lines. The first metal layer is on the substantially planar upper surface such that the first metal layer will have a surface area less than the first surface area of the substantially planar upper surface as defined by spaces on the substantially planar upper surface between the first metal layer and the prospective dice lines which define the first surface area. The second metal layer is on the substantially planar lower opposing surface.
摘要翻译：一种具有半导体衬底和第一和第二金属层的半导体辐射检测器。半导体衬底具有基本平坦的上和下相对表面，其具有相应的第一和第二表面区域。第一和第二表面区域由预期的骰子线限定。第一金属层位于基本上平坦的上表面上，使得第一金属层的表面积小于基本上平坦的上表面的第一表面积，如第一金属层和第二金属层之间的基本平坦的上表面上的空间所限定的定义第一表面积的预期骰子线。第二金属层位于基本平坦的下相对表面上。

4. 发明授权

US08742522B2 Method of making a semiconductor radiation detector 有权
标题翻译：制造半导体辐射探测器的方法
公开(公告)号：US08742522B2
公开(公告)日：2014-06-03
申请号：US13442957
申请日：2012-04-10
申请人： Handong Li , Michael Prokesch , John F. Eger
发明人： Handong Li , Michael Prokesch , John F. Eger
IPC分类号： H01L27/14
CPC分类号： H01L31/022408 , H01L27/14676 , H01L27/14696 , H01L31/085 , H01L31/1828 , Y02E10/543
摘要： A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.
摘要翻译：一种制造半导体辐射检测器的方法，其中用作阴极和阳极电极的金属层从指定的预期骰子线凹下，其限定每个检测器的总上表面积和下表面积，使得切割刀片不会直接接合金属，因此防止金属侵入（污染）检测器基板的垂直侧壁。

5. 发明申请

US20090250692A1 Radiation Detector With Asymmetric Contacts 审中-公开
标题翻译：不对称触点的辐射探测器
公开(公告)号：US20090250692A1
公开(公告)日：2009-10-08
申请号：US12419638
申请日：2009-04-07
申请人： Csaba Szeles , Utpal K. Chakrabarti
发明人： Csaba Szeles , Utpal K. Chakrabarti
IPC分类号： H01L31/0272 , H01L21/283
CPC分类号： H01L29/47 , H01L31/115
摘要： A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0≦x≦1, having a first electrode made of Pt or Au on one surface of the crystal and a second electrode of Al, Ti or In on another surface of the crystal. In use of the crystal to detect radiation events, an electrical bias is applied between the first and second electrodes.
摘要翻译：室温辐射检测器由半绝缘Cd1-xZnxTe晶体制成，其中0 <= x <= 1，在晶体的一个表面上具有由Pt或Au制成的第一电极和Al，Ti的第二电极或在晶体的另一个表面。在使用晶体来检测辐射事件时，在第一和第二电极之间施加电偏压。

6. 发明申请

US20090236535A1 RADIATION DETECTOR WITH CO-PLANAR GRID STRUCTURE 有权
标题翻译：具有共平面网格结构的辐射探测器
公开(公告)号：US20090236535A1
公开(公告)日：2009-09-24
申请号：US12297747
申请日：2007-04-23
申请人： Stephen A. Soldner
发明人： Stephen A. Soldner
IPC分类号： G01T1/24
CPC分类号： H01J47/08
摘要： A semiconductor radiation detector (1′, 1″, 1′″, 1″″) includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).
摘要翻译：半导体辐射检测器（1'，1“，1”，1“，”1“，1”，1“'1'）包括半导体材料体（2），其响应于电离辐射，用于在所述主体）。导电阴极（4）设置在主体（2）的一侧，并且阳极结构（6）设置在主体（2）的另一侧。阳极结构（6）包括与主体（2）接触并且在其每对指状件之间限定细长间隙（10）和第二组间隔的细长导电指状物（10）的间隔开的细长导电指状物（8） 12），其位于主体（2）的包括间隔开的细长导电指状物（8）的表面之上。第二组间隔的细长导电指状物（12）的每个手指部分地或全部地覆盖第一组间隔的细长导电指状物（8）的一对相邻指状物之间的细长间隙。

7. 发明申请

US20090218647A1 Semiconductor Radiation Detector With Thin Film Platinum Alloyed Electrode 有权
标题翻译：半导体辐射检测器与薄膜铂合金电极
公开(公告)号：US20090218647A1
公开(公告)日：2009-09-03
申请号：US12358393
申请日：2009-01-23
申请人： Gary L. Smith , Csaba Szeles
发明人： Gary L. Smith , Csaba Szeles
IPC分类号： H01L31/00
CPC分类号： H01L31/0224 , H01L27/14676
摘要： A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.
摘要翻译：化合物半导体辐射检测器包括在其至少一个表面上具有电极的化合物半导体材料体。电极包括第一元件和第二元件的化合物层。第一元素是铂，第二元素包括以下中的至少一种：铬，钴，镓，锗，铟，钼，镍，钯，钌，硅，银，钽，钛，钨，钒，锆，，铁，镁，铜，锡或金。层可以进一步包括子层，每个子层由第二元素中的不同的一个和作为第一元素的铂制成。

8. 发明申请

US20090095915A1 PORTABLE RADIATION DETECTION SYSTEM AND METHOD 审中-公开
标题翻译：便携式辐射检测系统及方法
公开(公告)号：US20090095915A1
公开(公告)日：2009-04-16
申请号：US12248359
申请日：2008-10-09
申请人： Fernando A. Ferraro , Robert K. Davis , Joseph Grosholz, JR.
发明人： Fernando A. Ferraro , Robert K. Davis , Joseph Grosholz, JR.
IPC分类号： G01T1/24
CPC分类号： G01T1/243 , G01T1/247
摘要： A radiation detection system includes a radiation detector and a DC/DC converter that induces an electric field in the radiation detector. A counter circuit outputs a pulse related to the energy of each incoming radiation event on the radiation detector. The peak amplitude of each pulse output by the counter circuit is converted into a digital equivalent value. A means for processing processes each digital equivalent value and counts a number of pulses output by the counter circuit over an interval of time. A port has one or more data lines connected to the means for processing and one or more power lines connected to the DC/DC converter. The port facilitates a connection to a host system which provides a single DC voltage to the DC/DC converter which converts the single DC voltage into a higher level voltage that induces the electric field in the radiation detector.
摘要翻译：辐射检测系统包括辐射检测器和在辐射检测器中诱发电场的DC / DC转换器。计数器电路输出与辐射检测器上的每个入射辐射事件的能量有关的脉冲。由计数器电路输出的每个脉冲的峰值幅度被转换为数字等效值。一种用于处理每个数字等效值并且在一段时间内对计数器电路输出的脉冲数进行计数的装置。端口具有连接到用于处理的装置和连接到DC / DC转换器的一个或多个电力线的一个或多个数据线。该端口便于连接到主机系统，该主机系统向DC / DC转换器提供单个DC电压，DC / DC转换器将单个DC电压转换为在辐射探测器中引起电场的较高电平电压。

9. 发明授权

US08664616B2 Count correction in a photon counting imaging system 有权
标题翻译：光子计数成像系统中的计数校正
公开(公告)号：US08664616B2
公开(公告)日：2014-03-04
申请号：US12865218
申请日：2009-06-11
申请人： David S. Rundle
发明人： David S. Rundle
IPC分类号： G01T1/20
CPC分类号： G01T7/005 , A61B6/00
摘要： In a method of count correction for pixels of a pixilated photon counting detector, the average count value output by each of a plurality of pixels during a period of time is determined. A product is determined of the actual average count value and a multiplying correction factor. A corrected count value is then determined for the pixel equal to a sum of the product and an additive correction factor. The multiplying correction factor equals a square root of a quotient of a desired average count value to be output by each of the plurality of pixels during the period of time divided by the actual average count value. The additive correction factor equals a product of the multiplying correction factor and the actual average count value subtracted from the desired average count value.
摘要翻译：在像素化光子计数检测器的像素的计数校正方法中，确定在一段时间内由多个像素中的每一个输出的平均计数值。确定产品的实际平均计数值和乘法校正系数。然后，对于等于乘积和加法校正因子的和的像素，确定校正后的计数值。乘法校正因子等于在时间段内除以实际平均计数值之前要由多个像素中的每一个输出的期望平均计数值的商的平方根。加法校正因子等于乘法校正因子与从期望的平均计数值中减去的实际平均计数值的乘积。

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