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    • 8. 发明授权
    • Thick film resistive heater compositions comprising Ag and RuO2, and methods of making same
    • 包含Ag和RuO 2的厚膜电阻加热器组合物及其制备方法
    • US09431148B2
    • 2016-08-30
    • US14143301
    • 2013-12-30
    • E I DU PONT DE NEMOURS AND COMPANY
    • Marc H LabrancheKenneth Warren Hang
    • H01B1/22C03C3/062C03C3/064C03C3/066C03C8/14C03C8/16C03C8/18H01C17/065H05B3/12
    • H01B1/22C03C3/062C03C3/064C03C3/066C03C8/14C03C8/16C03C8/18H01C17/06526H01C17/06533H05B3/12
    • Thick film resistor paste compositions, and methods for making the thick film compositions are disclosed. The compositions include a resistor composition dispersed in an organic vehicle. The resistor composition has 3 to 60% by weight RuO2 conductive material, 5 to 75% by weight Ag conductive material, 15 to 60% by weight glass frit and optionally up to 10% by weight copper oxide or precursor thereof, and up to 20% by weight bismuth oxide or precursor thereof. Optionally the glass is (by weight) 25-45% SiO2, 2-15% Al2O3, 0-3% ZrO2, 0-8% B2O3, 5-15% CuO, 0-8% BaO, 0-3% P2O5, and 20-50% Bi2O3. The resistor composition when printed to a dry thickness and fired at a temperature between 750° C. and 950° C. achieves a sheet resistivity between 10 and 10,000 milliohms/square and a hot temperature coefficient of resistivity of 1000 ppm/C or higher. The fired resistor composition may achieve a resistance thickness ratio (Rtr) value between 0.75 and 1.50.
    • 公开了厚膜电阻膏组合物和制备厚膜组合物的方法。 组合物包括分散在有机载体中的电阻组合物。 电阻组合物具有3至60重量%的RuO 2导电材料,5至75重量%的Ag导电材料,15至60重量%的玻璃料和任选的至多10重量%的氧化铜或其前体,以及最多20个 重量铋氧化物或其前体。 任选地,玻璃为(重量)25-45%SiO 2,2-15%Al 2 O 3,0-3%ZrO 2,0-8%B 2 O 3,5-15%CuO,0-8%BaO,0-3%P 2 O 5, 和20-50%Bi2O3。 当印刷到干燥厚度并在750℃和950℃之间的温度下烧结时,电阻器组合物的电阻率达10至10,000毫欧/平方厘米,电阻率的热温度系数为1000ppm /℃或更高。 烧结的电阻组合物可以实现0.75至1.50之间的电阻厚度比(Rtr)值。