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1. 发明授权

US08395249B2 Sealed cavity 有权
标题翻译：密封腔
公开(公告)号：US08395249B2
公开(公告)日：2013-03-12
申请号：US13195215
申请日：2011-08-01
申请人： Mickael Renault
发明人： Mickael Renault
IPC分类号： H01L23/02 , H01L23/28 , H01L21/00
CPC分类号： B81C1/00293 , B81C2203/0145
摘要： Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity.
摘要翻译：本文公开的实施例通常包括在器件结构中密封空腔的方法。可以通过蚀刻可能限定空腔体积的牺牲材料来打开空腔。空腔下方的材料可以被溅射蚀刻并再沉积在通向空腔的通道上方并在其中，从而密封空腔。材料可以从空腔上方溅射蚀刻并再沉积在通向空腔的通道中。溅射蚀刻可以在基本惰性的气氛中进行。由于溅射蚀刻是物理过程，很少或没有溅射蚀刻的材料将重新沉积在腔本身内。惰性气体可以在空腔打开之后清除空腔中可能存在的任何残留气体。因此，在溅射蚀刻之后，空腔可以基本上填充不会对空腔产生负面影响的惰性气体。

2. 发明申请

US20100015744A1 Micro-Electromechanical Device and Method of Making the Same 审中-公开
标题翻译：微机电装置及其制作方法
公开(公告)号：US20100015744A1
公开(公告)日：2010-01-21
申请号：US12085429
申请日：2006-11-22
申请人： Robert Kazinzci
发明人： Robert Kazinzci
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： B81B3/001 , H01H1/0036 , H01H2001/0052
摘要： A method of manufacturing a cantilever-based micro-electromechanical device comprising the steps of providing a first conductive material layer on a substrate to from a plurality of electrodes. Then, depositing a sacrificial material layer on the electrodes and substrate, thereby defining a non-exposed surface and an exposed surface of the sacrificial material. The method comprises the steps of patterning and etching the sacrificial material layer such that at least a portion of at least one electrode is exposed and spuner etching the sacrificial material layer such that the exposed surface of the sacrificial material layer comprises edges which are incongruous with the edges of the non-exposed surface. The method then involves forming a cantilever structure. Finally, the method comprises the step of removing at least a portion of the sacrificial material layer such that at least a portion of the cantilever structure is suspended.
摘要翻译：一种制造基于悬臂的微机电装置的方法，包括以下步骤：从多个电极向衬底提供第一导电材料层。然后，在电极和基底上沉积牺牲材料层，由此限定牺牲材料的未暴露表面和暴露表面。该方法包括以下步骤：图案化和蚀刻牺牲材料层，使得暴露至少一个电极的至少一部分，并且旋转器蚀刻牺牲材料层，使得牺牲材料层的暴露表面包括与其不一致的边缘未暴露表面的边缘。该方法然后包括形成悬臂结构。最后，该方法包括去除牺牲材料层的至少一部分以使悬臂结构的至少一部分被悬挂的步骤。

3. 发明授权

US09019756B2 Architecture for device having cantilever electrode 有权
标题翻译：具有悬臂电极的器件结构
公开(公告)号：US09019756B2
公开(公告)日：2015-04-28
申请号：US12070151
申请日：2008-02-14
申请人： Robertus Petrus van Kampen
发明人： Robertus Petrus van Kampen
IPC分类号： G11C11/50 , H01H59/00 , G11C23/00
CPC分类号： H01H59/0009 , G11C11/50 , G11C23/00
摘要： In one embodiment, a non-volatile memory bitcell includes a program electrode, an erase electrode, a cantilever electrode connected to a bi-stable cantilever positioned between the program electrode and the erase electrode, and switching means connected to the program electrode arranged to apply a voltage potential onto the program electrode, or to detect or to prevent the flow of current from the cantilever to the program electrode. The switching means may comprise a switch having a first node, a second node, and a control node, wherein voltage is applied to the control node to activate the switch to provide a connection between the first node and the second node. The switching means may comprise a pass-gate. The switching means may comprise an NMOS transistor. The switching means may comprise a PMOS transistor. The switching means may comprise a MEMS switch.
摘要翻译：在一个实施例中，非易失性存储器位单元包括编程电极，擦除电极，连接到位于编程电极和擦除电极之间的双稳态悬臂的悬臂电极，以及连接到编程电极的开关装置，编程电极上的电压电位，或者检测或防止从悬臂到编程电极的电流流动。切换装置可以包括具有第一节点，第二节点和控制节点的交换机，其中电压被施加到控制节点以激活交换机以在第一节点和第二节点之间提供连接。开关装置可以包括通孔。开关装置可以包括NMOS晶体管。开关装置可以包括PMOS晶体管。开关装置可以包括MEMS开关。

4. 发明授权

US09018717B2 Pull up electrode and waffle type microstructure 有权
标题翻译：拉起电极和华夫饼型微结构
公开(公告)号：US09018717B2
公开(公告)日：2015-04-28
申请号：US13237261
申请日：2011-09-20
申请人： Richard L. Knipe , Robertus Petrus van Kampen , Anartz Unamuno , Roberto Gaddi
发明人： Richard L. Knipe , Robertus Petrus van Kampen , Anartz Unamuno , Roberto Gaddi
IPC分类号： H01L41/02 , H01H1/00 , H01H59/00
CPC分类号： H01H1/0036 , H01H59/0009 , H01H2001/0084
摘要： The present invention generally relates to MEMS devices and methods for their manufacture. The cantilever of the MEMS device may have a waffle-type microstructure. The waffle-type microstructure utilizes the support beams to impart stiffness to the microstructure while permitting the support beam to flex. The waffle-type microstructure permits design of rigid structures in combination with flexible supports. Additionally, compound springs may be used to create very stiff springs to improve hot-switch performance of MEMS devices. To permit the MEMS devices to utilize higher RF voltages, a pull up electrode may be positioned above the cantilever to help pull the cantilever away from the contact electrode.
摘要翻译：本发明一般涉及MEMS器件及其制造方法。 MEMS器件的悬臂可以具有华夫饼型微结构。华夫饼形微结构利用支撑梁来赋予微结构刚度，同时允许支撑梁弯曲。华夫饼型微结构允许将刚性结构与柔性支撑结合在一起。此外，可以使用复合弹簧来产生非常硬的弹簧以改善MEMS装置的热开关性能。为了允许MEMS器件利用更高的RF电压，可以将上拉电极定位在悬臂上方以帮助将悬臂从接触电极拉出。

5. 发明授权

US07989262B2 Method of sealing a cavity 有权
标题翻译：密封腔的方法
公开(公告)号：US07989262B2
公开(公告)日：2011-08-02
申请号：US12267186
申请日：2008-11-07
申请人： Mickael Renault
发明人： Mickael Renault
IPC分类号： H01L21/44
CPC分类号： B81C1/00293 , B81C2203/0145
摘要： Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity.
摘要翻译：本文公开的实施例通常包括在器件结构中密封空腔的方法。可以通过蚀刻可能限定空腔体积的牺牲材料来打开空腔。空腔下方的材料可以被溅射蚀刻并再沉积在通向空腔的通道上方并在其中，从而密封空腔。材料可以从空腔上方溅射蚀刻并再沉积在通向空腔的通道中。溅射蚀刻可以在基本惰性的气氛中进行。由于溅射蚀刻是物理过程，很少或没有溅射蚀刻的材料将重新沉积在腔本身内。惰性气体可以在空腔打开之后清除空腔中可能存在的任何残留气体。因此，在溅射蚀刻之后，空腔可以基本上填充不会对空腔产生负面影响的惰性气体。

6. 发明授权

US5677823A Bi-stable memory element 失效
标题翻译：双稳态存储元件
公开(公告)号：US5677823A
公开(公告)日：1997-10-14
申请号：US549697
申请日：1995-11-06
申请人： Charles Gordon Smith
发明人： Charles Gordon Smith
IPC分类号： G11C11/50 , G11C23/00 , H01H1/00 , H01H1/20 , H01H1/66 , H01H59/00 , H01L27/10 , H01L49/00
CPC分类号： H01H1/0036 , G11C11/50 , G11C23/00 , H01H59/0009 , H01H1/20 , H01H1/66 , H01H2001/0042 , H01H2059/0036 , H01H2059/0063
摘要： A bi-stable memory element (1) comprises a base contact (3), and a bridging contact (8), both made from an electrically conductive material. The bridging contact (8) is dimensioned so as to have two stable positions, in one of which the bridging contact (8) is in contact with the base contact (3), and in the other of which the bridging contact (8) is spaced apart from the base contact (3). Deflection means (4, 5) deflects the bridging contact (8) from one stable position to the other.
摘要翻译： PCT No.PCT / GB94 / 00977 Sec。 371日期：1995年11月6日 102（e）日期1995年11月6日PCT 1994年5月6日PCT PCT。公开号WO94 / 27308 日期1994年11月24日双稳态存储元件（1）包括由导电材料制成的基极触点（3）和桥接触点（8）。桥接触点（8）的尺寸设计成具有两个稳定的位置，其中桥接触点（8）中的一个与基极触点（3）接触，而另一个桥接触点（8）是与基部触点（3）间隔开。偏转装置（4,5）将桥接接触件（8）从一个稳定位置偏转到另一个。

7. 发明申请

US20090207717A1 Three-terminal multiple-time programmable memory bitcell and array architecture 有权
标题翻译：三端多时可编程存储单元和阵列架构
公开(公告)号：US20090207717A1
公开(公告)日：2009-08-20
申请号：US12070151
申请日：2008-02-14
申请人： Robertus Petrus van Kampen
发明人： Robertus Petrus van Kampen
IPC分类号： G11B9/00
CPC分类号： H01H59/0009 , G11C11/50 , G11C23/00
摘要： In one embodiment, a non-volatile memory bitcell includes a program electrode, an erase electrode, a cantilever electrode connected to a bi-stable cantilever positioned between the program electrode and the erase electrode, and switching means connected to the program electrode arranged to apply a voltage potential onto the program electrode, or to detect or to prevent the flow of current from the cantilever to the program electrode. The switching means may comprise a switch having a first node, a second node, and a control node, wherein voltage is applied to the control node to activate the switch to provide a connection between the first node and the second node. The switching means may comprise a pass-gate. The switching means may comprise an NMOS transistor. The switching means may comprise a PMOS transistor. The switching means may comprise a MEMS switch.
摘要翻译：在一个实施例中，非易失性存储器位单元包括编程电极，擦除电极，连接到位于编程电极和擦除电极之间的双稳态悬臂的悬臂电极，以及连接到编程电极的开关装置，编程电极上的电压电位，或者检测或防止从悬臂到编程电极的电流流动。切换装置可以包括具有第一节点，第二节点和控制节点的交换机，其中电压被施加到控制节点以激活交换机以在第一节点和第二节点之间提供连接。开关装置可以包括通孔。开关装置可以包括NMOS晶体管。开关装置可以包括PMOS晶体管。开关装置可以包括MEMS开关。

8. 发明申请

US20090134522A1 Micro-Electromechanical System Memory Device and Method of Making the Same 审中-公开
标题翻译：微机电系统存储器及其制作方法
公开(公告)号：US20090134522A1
公开(公告)日：2009-05-28
申请号：US12085506
申请日：2006-11-22
申请人： Charles Gordon Smith , Robert Kazinczi , Robertus P. Van Kampen
发明人： Charles Gordon Smith , Robert Kazinczi , Robertus P. Van Kampen
IPC分类号： H01L29/45 , H01L21/441
CPC分类号： B81C1/00666 , B81B3/001 , B81B2203/0118 , B81C2201/0109 , G11C23/00
摘要： A method of manufacturing a non-volatile memory bitcell comprises the steps of depositing a first layer of conductive material on a substrate and patterning and etching the first layer of conductive material to form three non-linearly disposed electrodes. The method also comprises the steps of depositing a first layer of sacrificial material on the electrodes and the substrate and providing an elongate cantilever structure on the first layer of sacrificial material such that the cantilever structure and at least a portion of each electrode overlap each other. The method also includes the steps of depositing a second layer of sacrificial material on the cantilever structure and the first layer of sacrificial material and providing a capping layer on the second layer of sacrificial material and providing holes in the capping layer such that at least a portion of the second layer of sacrificial material is exposed. Finally, the method provides the step of removing the first and second layers of sacrificial material through the holes provided in the capping layer, thereby defining a cavity in which the cantilever structure is suspended.
摘要翻译：一种制造非易失性存储器位单元的方法包括以下步骤：将第一层导电材料沉积在衬底上，并对第一层导电材料进行图案化和蚀刻以形成三个非线性布置的电极。该方法还包括以下步骤：在电极和衬底上沉积牺牲材料的第一层，并在第一牺牲材料层上提供细长的悬臂结构，使得悬臂结构和每个电极的至少一部分彼此重叠。该方法还包括以下步骤：将第二层牺牲材料沉积在悬臂结构和第一牺牲材料层上，并在牺牲材料的第二层上提供覆盖层，并在封盖层中提供孔，使得至少一部分的第二层牺牲材料被暴露。最后，该方法提供了通过设置在覆盖层中的孔去除第一层和第二层牺牲材料的步骤，从而限定悬臂悬臂结构的空腔。

9. 发明授权

US08957485B2 Fabrication of MEMS based cantilever switches by employing a split layer cantilever deposition scheme 有权
标题翻译：采用分层悬臂沉积方案制造基于MEMS的悬臂开关
公开(公告)号：US08957485B2
公开(公告)日：2015-02-17
申请号：US12357340
申请日：2009-01-21
申请人： Joseph Damian Gordon Lacey
发明人： Joseph Damian Gordon Lacey
IPC分类号： H01L29/84 , B81B3/00 , H01L41/09
CPC分类号： B81B3/007 , B81B2201/014 , B81B2203/0118 , H01L41/094
摘要： Embodiments discussed herein generally disclose novel alternative methods that can be employed to overcome the gradient stress formed in refractory materials to be used for thin film MEMS cantilever switches. The use of a ‘split layer’ cantilever fabrication method, as described herein enables thin film MEMS cantilever switches to be fabricated resulting in low operating voltage devices while maintaining the mechanical rigidity of the landing portion of the final fabricated cantilever switch.
摘要翻译：本文讨论的实施方案通常公开了可用于克服在用于薄膜MEMS悬臂开关的难熔材料中形成的梯度应力的新型替代方法。如本文所述使用“分裂层”悬臂制造方法，可以制造薄膜MEMS悬臂开关，从而产生低工作电压装置，同时保持最终制造的悬臂开关的着陆部分的机械刚性。

10. 发明授权

US08289674B2 Moving a free-standing structure between high and low adhesion states 有权
标题翻译：在高和低粘附状态之间移动独立结构
公开(公告)号：US08289674B2
公开(公告)日：2012-10-16
申请号：US12405758
申请日：2009-03-17
申请人： Charles Gordon Smith , Richard L. Knipe
发明人： Charles Gordon Smith , Richard L. Knipe
IPC分类号： H01H47/00
CPC分类号： H01H59/0009 , G11C23/00 , H01H1/0036 , H01H2001/0047 , H01H2059/0036 , H01H2059/0054 , H01H2059/0063
摘要： Embodiments disclosed herein generally solve a stiction problem in switching devices by using a series of pulses of force which take the switch from being strongly adhered to a landing electrode to the point where it is only weakly adhered. Once in the low adhesion state, the switch can then be pulled away from contact with a lower force provided by either the spring constant of the switch and/or the electrostatic forces resulting from low voltages applied to nearby electrodes.
摘要翻译：本文公开的实施例通过使用一系列将开关牢固地粘附到着陆电极到仅弱附着点的力的脉冲来解决开关器件中的静电问题。一旦处于低附着状态，则可以用由开关的弹簧常数提供的较小的力和/或施加到附近电极的低电压产生的静电力将开关拉离开接触。

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