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1. 发明授权

US08901016B2 Method of forming metal oxide hardmask 有权
标题翻译：形成金属氧化物硬掩模的方法
公开(公告)号：US08901016B2
公开(公告)日：2014-12-02
申请号：US13333420
申请日：2011-12-21
申请人： Jeongseok Ha , Hideaki Fukuda , Shintaro Kaido
发明人： Jeongseok Ha , Hideaki Fukuda , Shintaro Kaido
IPC分类号： H01L21/228 , H01L21/02 , H01L21/033
CPC分类号： H01L21/02153 , G03F1/00 , H01L21/0215 , H01L21/02186 , H01L21/02274 , H01L21/0228 , H01L21/0337
摘要： A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula SixM(1-x)Oy wherein M represents at least one metal element, x is less than one including zero, and y is approximately two or a stoichiometrically-determined number.
摘要翻译：在模板上形成金属氧化物硬掩模的方法包括：提供由形成在基板上的光致抗蚀剂或无定形碳构成的模板; 并通过原子层沉积（ALD）在由具有式SixM（1-x）Oy的材料构成的模板上沉积金属氧化物硬掩模，其中M表示至少一种金属元素，x小于包括0的一个，y是约两个或化学计量确定的数目。

2. 发明授权

US08765233B2 Method for forming low-carbon CVD film for filling trenches 有权
标题翻译：用于形成用于填充沟槽的低碳CVD膜的方法
公开(公告)号：US08765233B2
公开(公告)日：2014-07-01
申请号：US12331309
申请日：2008-12-09
申请人： Atsuki Fukazawa , Hisashi Tazawa , Shigeyuki Onizawa
发明人： Atsuki Fukazawa , Hisashi Tazawa , Shigeyuki Onizawa
IPC分类号： C23C16/22
CPC分类号： C23C16/045 , C23C16/36 , C23C16/56 , H01L21/02126 , H01L21/0223
摘要： A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
摘要翻译：在具有沟槽的基板上通过CVD形成低碳含硅膜的方法包括：在其分子中引入具有三个以下烃单元的含硅化合物，其沸点为35℃至220℃ 。向气体施加RF功率; 以及在具有沟槽的衬底上沉积膜，其中将衬底控制在使得含硅化合物的组分在衬底上至少部分地液化的温度，从而用膜填充沟槽。

3. 发明授权

US08569184B2 Method for forming single-phase multi-element film by PEALD 有权
标题翻译： PEALD形成单相多元膜的方法
公开(公告)号：US08569184B2
公开(公告)日：2013-10-29
申请号：US13250721
申请日：2011-09-30
申请人： Takahiro Oka , Akira Shimizu
发明人： Takahiro Oka , Akira Shimizu
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , C23C16/30 , C23C16/45536 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/02274 , H01L21/0228
摘要： A method for forming a single-phase multi-element film on a substrate in a reaction zone by PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing a precursor on the substrate in the absence of reactant and plasma; decomposing the precursor adsorbed on the substrate by an inert gas plasma; and reacting the decomposed precursor with a reactant gas plasma in the presence of the inert gas plasma. The multi-element film contains silicon and at least two non-metal elements constituting a matrix of the film, the precursor contains silicon and optionally at least one non-metal element to be incorporated in the matrix, and the reactant gas contains at least one non-metal element to be incorporated in the matrix.
摘要翻译：一种通过重复单个沉积循环的PEALD在反应区中在衬底上形成单相多元素膜的方法。单个沉积循环包括：在不存在反应物和等离子体的情况下在基底上吸附前体; 通过惰性气体等离子体分解吸附在基板上的前体; 并在惰性气体等离子体存在下使分解的前体与反应气体等离子体反应。多元素膜含有硅和构成膜的基质的至少两种非金属元素，前体含有硅和任选的至少一种待掺入基质的非金属元素，并且反应物气体含有至少一种非金属元素加入基质中。

4. 发明授权

US08415259B2 Method of depositing dielectric film by modified PEALD method 有权
标题翻译：通过改性PEALD法沉积介电膜的方法
公开(公告)号：US08415259B2
公开(公告)日：2013-04-09
申请号：US13410970
申请日：2012-03-02
申请人： Woo Jin Lee , Kuo-Wei Hong , Akira Shimizu , Daekyun Jeong
发明人： Woo Jin Lee , Kuo-Wei Hong , Akira Shimizu , Daekyun Jeong
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/4554 , C23C16/5096 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/31111
摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
摘要翻译：通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

5. 发明授权

US08394466B2 Method of forming conformal film having si-N bonds on high-aspect ratio pattern 有权
标题翻译：在高纵横比图案上形成具有si-N键的保形膜的方法
公开(公告)号：US08394466B2
公开(公告)日：2013-03-12
申请号：US12875889
申请日：2010-09-03
申请人： Kuo-wei Hong , Akira Shimizu , Kunitoshi Namba , Woo-Jin Lee
发明人： Kuo-wei Hong , Akira Shimizu , Kunitoshi Namba , Woo-Jin Lee
IPC分类号： H05H1/24
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/345 , C23C16/36 , C23C16/5096 , C23C16/515 , H01L21/02167 , H01L21/02219 , H01L21/02274 , H01L21/0228
摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.
摘要翻译：在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度前体并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

6. 发明申请

US20130014697A1 Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers 审中-公开
标题翻译：包含多个晶片加工室的液体材料的多个隔间的容器
公开(公告)号：US20130014697A1
公开(公告)日：2013-01-17
申请号：US13181407
申请日：2011-07-12
申请人： Hiroki Kanayama
发明人： Hiroki Kanayama
IPC分类号： C23C16/455 , C23C16/52 , C23C16/50
CPC分类号： C23C16/4481
摘要： A container for containing a liquid material for processing a wafer includes: a container body; a divider dividing the interior of the container body and defining compartments fluid-tightly sealed off from each other except for bottom portions of the compartments; gas inlet ports for introducing gas to the respective compartments and gas outlet ports for discharging gas from the respective compartments; and a liquid level sensor provided in one of the compartments for keeping a liquid surface of a liquid material above the bottom portions when the container is in use conditions.
摘要翻译：用于容纳用于处理晶片的液体材料的容器包括：容器体; 分隔器，其分隔容器主体的内部并且限定隔室彼此流体密封地隔开，除了隔室的底部; 用于将气体引入各个隔室的气体入口和用于从各个隔室排放气体的气体出口; 以及液体传感器，其设置在所述隔间之一中，用于当所述容器处于使用状态时，将液体材料的液面保持在所述底部的上方。

7. 发明申请

US20120328780A1 Dual Section Module Having Shared and Unshared Mass Flow Controllers 审中-公开
标题翻译：具有共享和不共享质量流量控制器的双段模块
公开(公告)号：US20120328780A1
公开(公告)日：2012-12-27
申请号：US13169951
申请日：2011-06-27
申请人： Takayuki Yamagishi
发明人： Takayuki Yamagishi
IPC分类号： C23C16/455 , B05C11/10
CPC分类号： C23C16/45561 , G05D7/0641
摘要： A dual section module with mass flow controllers, for processing wafers, includes: dual process sections integrated together; at least one mass flow controller (MFC) each shared by the dual process sections and provided in a gas line branching into two gas lines, at a branching point, connected to the respective interiors of the dual process sections and arranged symmetrically between the dual process sections; and at least one mass flow controller (MFC) each unshared by the dual process sections and provided in a gas line connected to the interior of each dual process section.
摘要翻译：具有用于处理晶片的质量流量控制器的双段模块包括：集成在一起的双工艺段; 至少一个质量流量控制器（MFC），每个质量流量控制器（MFC）由双重处理部分共享，并且设置在分支到两个气体管线的气体管线中，在分支点处连接到双工艺部件的相应内部并且对称地布置在双重过程部分和至少一个质量流量控制器（MFC），每个质量流量控制器（MFC）分别由双重处理部分分配并且设置在连接到每个双重处理部分的内部的气体管线中。

8. 发明授权

US08334219B2 Method of forming stress-tuned dielectric film having Si-N bonds by modified PEALD 有权
标题翻译：通过改性PEALD形成具有Si-N键的应力调谐电介质膜的方法
公开(公告)号：US08334219B2
公开(公告)日：2012-12-18
申请号：US12832739
申请日：2010-07-08
申请人： Woo-Jin Lee , Kuo-Wei Hong , Akira Shimuzu
发明人： Woo-Jin Lee , Kuo-Wei Hong , Akira Shimuzu
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/345 , C23C16/45538 , C23C16/5096 , C23C16/52 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/3185
摘要： A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate.
摘要翻译：通过改进的等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的应力调谐电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入到反应空间内放置半导体衬底; 使用高频RF电源和低频RF电源将RF功率应用于反应空间; 并将脉冲中的含氢硅前体引入反应空间，其中等离子体被激发，从而在衬底上形成具有Si-N键的应力调谐电介质膜。

9. 发明申请

US20120295449A1 Method of Depositing Dielectric Film by ALD Using Precursor Containing Silicon, Hydrocarbon, and Halogen 有权
标题翻译：通过使用含有硅，烃和卤素的前体ALD沉积介电膜的方法
公开(公告)号：US20120295449A1
公开(公告)日：2012-11-22
申请号：US13566069
申请日：2012-08-03
申请人： Atsuki Fukazawa
发明人： Atsuki Fukazawa
IPC分类号： H01L21/314 , H01L21/318
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45542 , C23C16/45553 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.
摘要翻译：通过原子层沉积（ALD）在半导体衬底上形成具有至少Si-N，Si-C或Si-B键的电介质膜的方法包括：以脉冲提供前体以将前体吸附在表面上的基材; 在表面上以脉冲形式提供反应气体，而不会重叠前体的供应; 使表面上的前体和反应气体反应; 并重复上述步骤以在基片上形成至少具有Si-N，Si-C或Si-B键的电介质膜。该前体在其分子中具有至少一个Si-C或Si-N键，至少一个烃和至少两个与硅结合的卤素。

10. 发明申请

US20120264305A1 Footing Reduction Using Etch-Selective Layer 有权
标题翻译：使用蚀刻选择层减少底脚
公开(公告)号：US20120264305A1
公开(公告)日：2012-10-18
申请号：US13085698
申请日：2011-04-13
申请人： Ryu Nakano
发明人： Ryu Nakano
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0273 , H01L21/0276 , H01L21/31116 , H01L21/31138
摘要： A method of forming side spacers upwardly extending from a substrate, includes: providing a template constituted by a photoresist formed on and in contact with an etch-selective layer laminated on a substrate; anisotropically etching the template in a thickness direction with an oxygen-containing plasma to remove a footing of the photoresist and an exposed portion of the underlying layer; depositing a spacer film on the template by atomic layer deposition (ALD); and forming side spacers using the spacer film by etching. The etch-selective layer has a substantially lower etch rate than that of the photoresist.
摘要翻译：从衬底向上延伸的形成侧面间隔物的方法包括：提供由在层压在衬底上的蚀刻选择层上形成并与其接触的光致抗蚀剂构成的模板; 用含氧等离子体在厚度方向上各向异性地蚀刻模板以去除光致抗蚀剂的底脚和下层的暴露部分; 通过原子层沉积（ALD）在模板上沉积间隔膜; 以及通过蚀刻使用间隔膜形成侧间隔件。蚀刻选择层具有比光致抗蚀剂低的蚀刻速率。

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