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1. 发明授权

US08058183B2 Restoring low dielectric constant film properties 有权
标题翻译：恢复低介电常数膜性能
公开(公告)号：US08058183B2
公开(公告)日：2011-11-15
申请号：US12481382
申请日：2009-06-09
申请人： Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
发明人： Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
IPC分类号： H01L21/31 , H01L21/469 , H01L21/20 , H01L21/36
CPC分类号： H01L21/3105 , H01L21/3212 , H01L21/76802 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/7684
摘要： A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectric layer. Finally, the additive is removed from the plurality of pores.
摘要翻译：描述了用于恢复低介电常数膜的介电常数的方法。在基板上形成具有多个孔的多孔介电层。然后用添加剂填充多个孔以提供堵塞的多孔介电层。最后，从多个孔中除去添加剂。

2. 发明申请

US20090317971A1 RESTORING LOW DIELECTRIC CONSTANT FILM PROPERTIES 有权
标题翻译：恢复低介电常数膜性能
公开(公告)号：US20090317971A1
公开(公告)日：2009-12-24
申请号：US12481382
申请日：2009-06-09
申请人： Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
发明人： Zhenjiang Cui , May Yu , Alexandros T. Demos , Mehul Naik
IPC分类号： H01L21/768 , H01L21/3105
CPC分类号： H01L21/3105 , H01L21/3212 , H01L21/76802 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/7684
摘要： A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectric layer. Finally, the additive is removed from the plurality of pores.
摘要翻译：描述了用于恢复低介电常数膜的介电常数的方法。在基板上形成具有多个孔的多孔介电层。然后用添加剂填充多个孔以提供堵塞的多孔介电层。最后，从多个孔中除去添加剂。

3. 发明授权

US07547643B2 Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
标题翻译：促进多孔低K膜粘附到底层阻挡层的技术
公开(公告)号：US07547643B2
公开(公告)日：2009-06-16
申请号：US11046090
申请日：2005-01-28
申请人： Francimar Schmitt , Alexandros T. Demos , Derek R. Witty , Hichem M'Sadd , Sang H. Ahn , Lester A. D'Cruz , Khaled A. Elsheref , Zhenjiang Cui
发明人： Francimar Schmitt , Alexandros T. Demos , Derek R. Witty , Hichem M'Sadd , Sang H. Ahn , Lester A. D'Cruz , Khaled A. Elsheref , Zhenjiang Cui
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/31695 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76832 , H01L2221/1047
摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.
摘要翻译：通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。可以利用单独或组合的多种技术之一形成该粘合层。在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。以在沉积低K材料之前立即氧化Si前体。在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

4. 发明授权

US07018941B2 Post treatment of low k dielectric films 有权
标题翻译：后处理低k电介质膜
公开(公告)号：US07018941B2
公开(公告)日：2006-03-28
申请号：US10830203
申请日：2004-04-21
申请人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
发明人： Zhenjiang Cui , Josephine J. Chang , Alexandros T. Demos , Reza Arghavani , Derek R. Witty , Helen R. Armer , Girish A. Dixit , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/461
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/02351
摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
摘要翻译：提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

5. 发明授权

US06878644B2 Multistep cure technique for spin-on-glass films 失效
标题翻译：旋涂玻璃膜的多步法固化技术
公开(公告)号：US06878644B2
公开(公告)日：2005-04-12
申请号：US10430942
申请日：2003-05-06
申请人： Zhenjiang Cui , Rick J. Roberts , Michael S. Cox , Jun Zhao , Khaled Elsheref , Alexandros T. Demos
发明人： Zhenjiang Cui , Rick J. Roberts , Michael S. Cox , Jun Zhao , Khaled Elsheref , Alexandros T. Demos
IPC分类号： H01L21/3105 , H01L21/762 , H01L21/31 , H01L21/461 , H01L21/76
CPC分类号： H01L21/76229 , H01L21/3105
摘要： A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
摘要翻译：一种填充蚀刻在衬底中的多个沟槽的方法。在一个实施例中，该方法包括在衬底上沉积旋涂玻璃材料层并进入多个沟槽; 通过在第一温度下将自旋玻璃材料暴露于电子束辐射第一周期，随后将旋涂玻璃材料暴露于第二温度下的电子束第二周期来固化旋涂玻璃材料层，其中第二温度大于第一温度。该方法的结论是通过使用化学气相沉积技术在固化的旋涂玻璃层上沉积二氧化硅玻璃层。

6. 发明申请

US20120122320A1 Method Of Processing Low K Dielectric Films 审中-公开
标题翻译：低K电介质膜的处理方法
公开(公告)号：US20120122320A1
公开(公告)日：2012-05-17
申请号：US13296401
申请日：2011-11-15
申请人： Annamalai Lakshmanan , Zhenjiang Cui , Mehul Naik , See-Eng Phan , Jennifer Shan , Paul F. Ma
发明人： Annamalai Lakshmanan , Zhenjiang Cui , Mehul Naik , See-Eng Phan , Jennifer Shan , Paul F. Ma
IPC分类号： H01L21/318 , H01L21/31
CPC分类号： H01L21/3105 , C23C16/56 , H01L21/02126 , H01L21/76826 , H01L21/76843
摘要： Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described.
摘要翻译：提供的方法是在导致碳从膜中耗尽的过程之后将碳重新并入低k膜中的方法。此外，还描述了补充耗尽碳和用氮化钽封盖的方法。

7. 发明授权

US07811924B2 Air gap formation and integration using a patterning cap 有权
标题翻译：使用图案化盖的气隙形成和一体化
公开(公告)号：US07811924B2
公开(公告)日：2010-10-12
申请号：US12336884
申请日：2008-12-17
申请人： Zhenjiang Cui , Mehul Naik , Christopher D. Bencher , Kenneth MacWilliams
发明人： Zhenjiang Cui , Mehul Naik , Christopher D. Bencher , Kenneth MacWilliams
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L21/02115 , H01L21/02271 , H01L21/0337 , H01L21/31144 , H01L21/3146 , H01L21/7682 , H01L21/76831 , H01L21/76832 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.
摘要翻译：膜图案及其结果的方法。在一个实施方案中，在诸如镶嵌层的基底上形成无定形碳掩模。在无定形碳掩模上沉积间隔层，并且蚀刻间隔层以形成间隔物并暴露无定形碳掩模。无定形碳掩模被选择性地去除到间隔物以暴露衬底层。间隔填充层沉积在间隔物周围以覆盖基底层，但暴露间隔物。选择性地移除间隔物以在衬底上形成间隙填充掩模。间隙填充掩模的图案在一个实施方式中转移到镶嵌层中以去除IMD的至少一部分并形成气隙。

8. 发明申请

US20120009796A1 POST-ASH SIDEWALL HEALING 审中-公开
标题翻译：后腰围护理
公开(公告)号：US20120009796A1
公开(公告)日：2012-01-12
申请号：US12909167
申请日：2010-10-21
申请人： Zhenjiang Cui , Anchuan Wang , Mehul Naik , Nitin Ingle , Young Lee , Shankar Venkataraman
发明人： Zhenjiang Cui , Anchuan Wang , Mehul Naik , Nitin Ingle , Young Lee , Shankar Venkataraman
IPC分类号： H01L21/3065
CPC分类号： H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/76814
摘要： Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion.
摘要翻译：描述了降低集成电路的两个导电部件之间存在的有效介电常数的方法。该方法包括使用对低K电介质层的富氧部分具有选择性的气相蚀刻。当蚀刻工艺通过较高K富氧部分并达到低K部分时，蚀刻速率衰减。由于气相蚀刻工艺不容易除去所需的低K部分，所以蚀刻工艺可以容易地定时。

9. 发明授权

US07588036B2 Chamber clean method using remote and in situ plasma cleaning systems 失效
标题翻译：室内清洁方法使用远程和原位等离子体清洁系统
公开(公告)号：US07588036B2
公开(公告)日：2009-09-15
申请号：US10187817
申请日：2002-07-01
申请人： Zhenjiang Cui , Michael S. Cox , Canfeng Lai , Paddy Krishnaraj
发明人： Zhenjiang Cui , Michael S. Cox , Canfeng Lai , Paddy Krishnaraj
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01J37/32862 , C23C16/4405 , H01J2237/022 , Y10S438/905
摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.
摘要翻译：一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。

10. 发明申请

US20050202685A1 Adhesion improvement for low k dielectrics 有权
标题翻译：低k电介质的粘附改善
公开(公告)号：US20050202685A1
公开(公告)日：2005-09-15
申请号：US10801190
申请日：2004-03-15
申请人： Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Li-Qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park , Jerry Sugiarto
发明人： Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Li-Qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park , Jerry Sugiarto
IPC分类号： C23C16/02 , C23C16/32 , C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31633 , C23C16/02 , C23C16/325 , C23C16/401 , H01L21/02126 , H01L21/02274 , H01L21/02304 , H01L21/76801 , H01L21/7681 , H01L21/76826 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
摘要翻译：提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第电介质起始层。

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