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1. 发明授权

US08711122B2 Sensor apparatus and information processing apparatus 有权
标题翻译：传感器装置和信息处理装置
公开(公告)号：US08711122B2
公开(公告)日：2014-04-29
申请号：US13228686
申请日：2011-09-09
申请人： Yutaka Wada , Naohiro Takahashi , Takashi Itaya
发明人： Yutaka Wada , Naohiro Takahashi , Takashi Itaya
IPC分类号： G06F3/045 , G06F3/041
CPC分类号： G06F3/044 , G06F3/0414
摘要： A sensor apparatus includes: a sensor panel that includes an input operation surface and is configured to detect positional coordinates of a detection object that comes into contact with the input operation surface; a casing; and a pressure-sensitive sensor that includes a first electrode fixed on the sensor panel side, a second electrode fixed on the casing side, and an elastic member that is provided between the sensor panel and the casing and elastically supports the sensor panel with respect to the casing, includes, between the first electrode and the second electrode, a first area formed with a first capacitance and a second area formed with a second capacitance larger than the first capacitance, and is configured to detect a pressing force input to the input operation surface as a change in a capacitance between the first electrode and the second electrode.
摘要翻译：传感器装置包括：传感器面板，包括输入操作面，被配置为检测与输入操作面接触的检测对象的位置坐标; 套管以及压敏传感器，其包括固定在所述传感器面板侧的第一电极，固定在所述壳体侧的第二电极和设置在所述传感器面板与所述壳体之间的弹性部件，并相对于所述传感器面板弹性地支撑所述传感器面板壳体在第一电极和第二电极之间包括形成有第一电容的第一区域和形成有大于第一电容的第二电容的第二区域，并且被配置为检测输入到输入操作的按压力表面作为第一电极和第二电极之间的电容的变化。

2. 发明申请

US20120068965A1 SENSOR APPARATUS AND INFORMATION PROCESSING APPARATUS 有权
标题翻译：传感器装置和信息处理装置
公开(公告)号：US20120068965A1
公开(公告)日：2012-03-22
申请号：US13228686
申请日：2011-09-09
申请人： Yutaka Wada , Naohiro Takahashi , Takashi Itaya
发明人： Yutaka Wada , Naohiro Takahashi , Takashi Itaya
IPC分类号： G06F3/045
CPC分类号： G06F3/044 , G06F3/0414
摘要： A sensor apparatus includes: a sensor panel that includes an input operation surface and is configured to detect positional coordinates of a detection object that comes into contact with the input operation surface; a casing; and a pressure-sensitive sensor that includes a first electrode fixed on the sensor panel side, a second electrode fixed on the casing side, and an elastic member that is provided between the sensor panel and the casing and elastically supports the sensor panel with respect to the casing, includes, between the first electrode and the second electrode, a first area formed with a first capacitance and a second area formed with a second capacitance larger than the first capacitance, and is configured to detect a pressing force input to the input operation surface as a change in a capacitance between the first electrode and the second electrode.
摘要翻译：传感器装置包括：传感器面板，包括输入操作面，被配置为检测与输入操作面接触的检测对象的位置坐标; 套管以及压敏传感器，其包括固定在所述传感器面板侧的第一电极，固定在所述壳体侧的第二电极和设置在所述传感器面板与所述壳体之间的弹性部件，并相对于所述传感器面板弹性地支撑所述传感器面板壳体在第一电极和第二电极之间包括形成有第一电容的第一区域和形成有大于第一电容的第二电容的第二区域，并且被配置为检测输入到输入操作的按压力表面作为第一电极和第二电极之间的电容的变化。

3. 发明授权

US07340352B2 Inspecting method, inspecting apparatus, and method of manufacturing semiconductor device 有权
标题翻译：检查方法，检查装置以及制造半导体器件的方法
公开(公告)号：US07340352B2
公开(公告)日：2008-03-04
申请号：US11588319
申请日：2006-10-27
申请人： Naohiro Takahashi , Kiyoshi Irino
发明人： Naohiro Takahashi , Kiyoshi Irino
IPC分类号： G01B5/28 , G06F19/00
CPC分类号： G01N21/9501 , G01N21/9503
摘要： An inspecting method is capable of efficiently inspecting a wafer. According to the inspecting method, the chip area of a wafer is inspected for defects, and based on the results, a defect density D0p of each of peripheral-zone chips in the chip area which are located closely to the peripheral area of the wafer is calculated. A peripheral-zone chip with a high defect density D0p is selected, and an area in the peripheral area which is outward of the selected peripheral-zone chip is inspected for defects. Since only the area in the peripheral area which is located outward of the peripheral-zone chip selected based on the defect density D0p is inspected for defects, the wafer is inspected efficiently.
摘要翻译：检查方法能够有效地检查晶片。根据检查方法，检查晶片的芯片面积的缺陷，并且基于该结果，芯片区域中的每个周边区域芯片的缺陷密度D 0p 位于紧密的位置计算晶圆的外围区域。选择具有高缺陷密度D <0P 的周边区域芯片，并且检查在所选周边区域芯片外部的周边区域中的缺陷。由于仅考虑了基于缺陷密度D 0p <0>的所选外围区域芯片周边区域的区域，故有效地检查晶片。

4. 发明申请

US20070035725A1 Defect inspection apparatus, sensitivity calibration method for the same, substrate for defect detection sensitivity calibration, and manufacturing method thereof 审中-公开
标题翻译：缺陷检查装置，其灵敏度校准方法，缺陷检测灵敏度校准用基板及其制造方法
公开(公告)号：US20070035725A1
公开(公告)日：2007-02-15
申请号：US11287314
申请日：2005-11-28
申请人： Naohiro Takahashi , Tamihide Yasumoto
发明人： Naohiro Takahashi , Tamihide Yasumoto
IPC分类号： G01N21/00 , G01J1/10
CPC分类号： G01N21/93 , G01N21/9501
摘要： A reference substrate for defect detection sensitivity calibration has: patterns and programmed defective portions which are cone defects with different sizes and are formed at random on a silicon substrate. By using reference substrate for defect detection sensitivity calibration, it is possible to obtain an index, usable in manufacturing management, for determining sensitivity adjustment after a lamp is replaced in an illumination part of a defect inspection apparatus.
摘要翻译：用于缺陷检测灵敏度校准的参考衬底具有：具有不同尺寸的锥形缺陷的图案和编程缺陷部分，并且在硅衬底上随机形成。通过使用用于缺陷检测灵敏度校准的参考基板，可以获得可用于制造管理中用于在缺陷检查装置的照明部分中更换灯后的灵敏度调节的指标。

5. 发明授权

US07064820B2 Surface inspection method and surface inspection system 失效
公开(公告)号：US07064820B2
公开(公告)日：2006-06-20
申请号：US10393833
申请日：2003-03-21
申请人： Hisashi Isozaki , Michihiro Yamazaki , Hiroshi Yoshikawa , Naoto Miki , Hiroyuki Maekawa , Naohiro Takahashi
发明人： Hisashi Isozaki , Michihiro Yamazaki , Hiroshi Yoshikawa , Naoto Miki , Hiroyuki Maekawa , Naohiro Takahashi
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/21 , G01N21/94
摘要： A surface inspection method in a surface inspection system which comprises a photodetection unit and a photodetection polarizing angle changing means, comprising the step of receiving a scattered reflection light from a substrate surface where standard particles are coated by changing a photodetection polarizing angle by the photodetection polarizing angle changing means, and the step of performing surface inspection by setting the photodetection polarizing angle to a condition where an S/N ratio of photodetection output is at the highest.

6. 发明授权

US07948618B2 Defect inspection method and apparatus with a threshold value determination 有权
标题翻译：具有阈值确定的缺陷检查方法和装置
公开(公告)号：US07948618B2
公开(公告)日：2011-05-24
申请号：US11580870
申请日：2006-10-16
申请人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
发明人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/95607 , G01N2021/8854
摘要： Scattered light from the surface of a sample subjected to the same process as a process for an inspection object is observed, a defect is detected from an intensity of scattered light, and a position of the detected defect and an intensity of scattered light caused by the detected defect are acquired. Defects detected are classified into a group detectable by observing secondary electrons emitted when an electron beam is applied to the surface of the sample and a group not detectable. A decision threshold value of a scattered light intensity for extracting defects to be counted is determined, in accordance with a result of classification by the above steps and the intensity of scattered light caused by the detected defect.
摘要翻译：观察到与经过与检查对象的处理相同的处理的样品的表面的散射光，从散射光的强度，检测到的缺陷的位置和由检测到的缺陷被获取。检测到的缺陷分为通过观察将电子束施加到样品表面时发射的二次电子可检测的组和不可检测的组。根据上述步骤的分类结果和由检测到的缺陷引起的散射光的强度，确定用于提取要计数的缺陷的散射光强度的判定阈值。

7. 发明授权

US07679737B2 Method, system and apparatus of inspection 有权
标题翻译：方法，系统和检验仪器
公开(公告)号：US07679737B2
公开(公告)日：2010-03-16
申请号：US11971384
申请日：2008-01-09
申请人： Naohiro Takahashi , Kiyoshi Irino
发明人： Naohiro Takahashi , Kiyoshi Irino
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4738
摘要： A method of inspecting defects on an object includes irradiating predetermined particles with a laser beam to measure first scattered light intensities, irradiating plural types of defects with the laser beam to measure second scattered light intensities, determining types of some defects selected out of the plural types of defects using the first scattered light intensities, setting a discrimination line indicating a boundary value of the second scattered light intensities based on the determination, and discriminating, using the discrimination line, defects on the object.
摘要翻译：检查物体上的缺陷的方法包括用激光束照射预定粒子以测量第一散射光强度，用激光束照射多种类型的缺陷以测量第二散射光强度，确定多种类型中选择的某些缺陷的类型使用第一散射光强度的缺陷，基于该确定来设置表示第二散射光强度的边界值的判别线，以及使用判别线识别物体上的缺陷。

8. 发明申请

US20070285653A1 Defect inspection method and apparatus 有权
标题翻译：缺陷检查方法和装置
公开(公告)号：US20070285653A1
公开(公告)日：2007-12-13
申请号：US11580870
申请日：2006-10-16
申请人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
发明人： Naohiro Takahashi , Tamihide Yasumoto , Tadamasa Noguchi
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/95607 , G01N2021/8854
摘要： (a) Scattered light from the surface of a sample subjected to the same process as a process for an inspection object is observed, a defect is detected from an intensity of scatted light, and a position of the detected defect and an intensity of scattered light caused by the detected defect are acquired.(b) Defects detected at the step (a) are classified into a group detectable by observing secondary electrons emitted when an electron beam is applied to the surface of the sample and a group not detectable. (c) A decision threshold value of a scattered light intensity for extracting defects to be counted is determined, in accordance with a result of classification by the step (b) and the intensity of scattered light caused by the detected defect.
摘要翻译：（a）观察到与经过与检查对象的处理相同的处理的样品的表面的散射光，从散射光的强度，检测到的缺陷的位置和散射光的强度检测缺陷由检测到的缺陷获得。（b）在步骤（a）中检测到的缺陷被分类为可以通过观察将电子束施加到样品表面上发射的二次电子和不可检测的组来检测的组。（c）根据步骤（b）的分类结果和由检测到的缺陷引起的散射光的强度，确定用于提取要计数的缺陷的散射光强度的判定阈值。

9. 发明授权

US4587226A Process for producing antimony-containing oxide catalyst with improved strength 失效
标题翻译：具有提高强度的生产含锑氧化物催化剂的方法
公开(公告)号：US4587226A
公开(公告)日：1986-05-06
申请号：US699056
申请日：1985-02-07
申请人： Yutaka Sasaki , Toshio Nakamura , Hiroshi Yamamoto , Hiroshi Murata , Yoshimi Nakamura , Naohiro Takahashi
发明人： Yutaka Sasaki , Toshio Nakamura , Hiroshi Yamamoto , Hiroshi Murata , Yoshimi Nakamura , Naohiro Takahashi
IPC分类号： B01J23/18 , B01J23/20 , B01J23/22 , B01J23/24 , B01J23/32 , B01J23/34 , B01J23/64 , B01J23/644 , B01J23/68 , B01J23/84 , B01J23/843 , B01J23/85 , B01J27/057 , B01J27/186 , B01J27/199 , B01J37/34 , C07B61/00 , C07C67/00 , C07C253/00 , C07C253/26 , C07C255/08
CPC分类号： B01J23/8435 , B01J23/18 , B01J23/22 , B01J23/24 , B01J23/34 , B01J23/64 , B01J27/0573 , B01J27/0576 , B01J27/186 , B01J37/343 , Y10S502/522
摘要： A process for producing an antimony-containing oxide catalyst with improved strength is described, by the steps of preparing a slurry containing an antimony compound, a polyvalent metal compound and a silica sol as the essential ingredients, adjusting the pH of the slurry to 7 or less, heat treating the slurry at a temperature of 40.degree. C. or higher, and thereafter drying the slurry and calcining the dried particles, wherein said slurry is irradiated with ultrasonic waves during the pH adjustment, or after the pH adjustment and before completion of the heat treatment.
摘要翻译：通过制备含有锑化合物，多价金属化合物和二氧化硅溶胶作为必要成分的浆料的步骤，描述了制备具有改善强度的含锑氧化物催化剂的方法，将浆料的pH调节至7或较少，在40℃以上的温度下对浆料进行热处理，然后干燥浆料并煅烧干燥的颗粒，其中所述浆料在pH调节期间或在pH调节之后或在pH调节完成之前用超声波照射热处理。

10. 发明授权

US08889244B2 Transparent electrode device, information input device, and electronic equipment 有权
标题翻译：透明电极装置，信息输入装置和电子设备
公开(公告)号：US08889244B2
公开(公告)日：2014-11-18
申请号：US13528468
申请日：2012-06-20
申请人： Mikihisa Mizuno , Naohiro Takahashi
发明人： Mikihisa Mizuno , Naohiro Takahashi
IPC分类号： B32B3/24 , G06F3/044
CPC分类号： G06F3/044 , Y10T428/24273 , Y10T428/24322 , Y10T428/24331 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
摘要： A transparent electrode device includes: a substrate; an electrode region formed on the substrate using a transparent electroconductive film; and an insulating region disposed on the substrate and adjacent to the electrode region, in which a plurality of random island patterns including patterns having a width of 100 μm or greater, formed using the transparent electroconductive film, are disposed mutually distanced from one another.
摘要翻译：透明电极装置包括：基板; 使用透明导电膜在所述基板上形成的电极区域; 以及设置在所述基板上并且与所述电极区域相邻的绝缘区域，其中使用所述透明导电膜形成的包括具有100μm以上的宽度的图案的多个随机岛状图案彼此相距设置。

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