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1. 发明授权

US07582185B2 Plasma-processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07582185B2
公开(公告)日：2009-09-01
申请号：US10745604
申请日：2003-12-29
申请人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
发明人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a capacitive element and an inductive element, which are mutually connected in series. The apparatus is arranged so that the capacitive element and the inductive element of the impedance-matching equipment are symmetrical with respect to the center of the high frequency power application electrode.
摘要翻译：一种具有高频功率施加电极的等离子体处理装置，其中通过向高频电力施加电极提供VHF电力而产生等离子体。等离子体处理装置具有阻抗匹配装置，其包括串联连接的电容元件和电感元件。该装置被布置成使得阻抗匹配设备的电容元件和电感元件相对于高频功率施加电极的中心是对称的。

2. 发明申请

US20090095420A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090095420A1
公开(公告)日：2009-04-16
申请号：US12327428
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： H01L21/3065 , B05C9/08 , H01L21/302
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

3. 发明授权

US06881684B2 Method of forming silicon nitride deposited film 失效
标题翻译：形成氮化硅沉积膜的方法
公开(公告)号：US06881684B2
公开(公告)日：2005-04-19
申请号：US10650710
申请日：2003-08-29
申请人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
发明人： Yukito Aota , Masahiro Kanai , Atsushi Koike , Tomokazu Sushihara
IPC分类号： C23C16/42 , C23C16/34 , C23C16/505 , C23C16/509 , H01L21/31 , H01L21/314 , H01L21/318 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , H01L21/02274 , H01L21/3185
摘要： A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.
摘要翻译：用于提供VHF频带的高频电力的平板高频电极和接地电极在真空容器中以小于8mm的间隔彼此相对设置; 至少将作为原料气体的硅烷类气体和氮气引入真空容器的反应空间，形成氮化硅沉积膜，反应空间的压力保持在40〜133℃。由此，可以获得质量好的氮化物膜。

4. 发明授权

US07587989B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07587989B2
公开(公告)日：2009-09-15
申请号：US10755300
申请日：2004-01-13
申请人： Yukito Aota , Masahiro Kanai
发明人： Yukito Aota , Masahiro Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32532 , C23C16/515
摘要： In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.
摘要翻译：在等离子体处理方法中，在阴极电极的背面设置有至少一个导体板d.c. 可能与阴极电极和对置电极绝缘，并且阴极电极和导体板被屏蔽壁包围，使得由阴极电极和相对电极提供的电极间耦合电容与提供的耦合电容的比率通过阴极电极和导体板背侧的屏蔽壁的底面不小于预定值。由此，实现了高质量的高速等离子体处理。

5. 发明申请

US20090084500A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
标题翻译：加工设备，排气加工过程和等离子体处理工艺
公开(公告)号：US20090084500A1
公开(公告)日：2009-04-02
申请号：US12326238
申请日：2008-12-02
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要翻译：公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置，由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

6. 发明申请

US20090114155A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090114155A1
公开(公告)日：2009-05-07
申请号：US12327403
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23C16/46
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

7. 发明授权

US06926934B2 Method and apparatus for deposited film 失效
标题翻译：沉积膜的方法和装置
公开(公告)号：US06926934B2
公开(公告)日：2005-08-09
申请号：US09818640
申请日：2001-03-28
申请人： Atsushi Koike , Yukito Aota , Masahiro Kanai , Hiroshi Sugai
发明人： Atsushi Koike , Yukito Aota , Masahiro Kanai , Hiroshi Sugai
IPC分类号： C23C16/24 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/31 , H01L31/04 , H05H1/02 , C23C16/00
CPC分类号： H01J37/32623 , C23C16/24 , C23C16/5096 , H01J37/32697
摘要： In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.
摘要翻译：在根据本发明的沉积膜形成方法或装置中，其包括在装有排气装置的真空容器中设置放电电极，供应用于形成至少含有Si的沉积膜的氢气和原料气体元件，通过向放电电极供给高频电力，从原料气体产生等离子体，以及通过等离子体CVD在真空容器中的基板上形成沉积膜，其中辅助电极在真空容器中排列成等离子体，周期性地在不引起放电形成沉积膜的情况下对辅助电极施加变化的电压，从而可以在高成膜速率下在大面积上形成质量好，均匀性好的非晶硅系淀积膜。

8. 发明授权

US06720037B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06720037B2
公开(公告)日：2004-04-13
申请号：US09949616
申请日：2001-09-12
申请人： Yukito Aota , Masahiro Kanai
发明人： Yukito Aota , Masahiro Kanai
IPC分类号： H05H146
CPC分类号： H01J37/32532 , C23C16/515
摘要： In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.
摘要翻译：在等离子体处理方法中，在阴极电极的背面设置有至少一个导体板d.c. 可能与阴极电极和对置电极绝缘，并且阴极电极和导体板被屏蔽壁包围，使得由阴极电极和相对电极提供的电极间耦合电容与提供的耦合电容的比率通过阴极电极和导体板背侧的屏蔽壁的底面不小于预定值。由此，实现了高质量的高速等离子体处理。

9. 发明授权

US6031198A Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US6031198A
公开(公告)日：2000-02-29
申请号：US80922
申请日：1998-05-19
申请人： Koichiro Moriyama , Yukito Aota , Masahiro Kanai , Hirokazu Otoshi
发明人： Koichiro Moriyama , Yukito Aota , Masahiro Kanai , Hirokazu Otoshi
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K9/00
CPC分类号： H01J37/32165 , H01J37/32935 , H01J37/3299
摘要： A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.
摘要翻译：用于处理衬底的等离子体处理方法包括：放电开始步骤，通过阻抗匹配电路将第二高频电力提供到处理室，然后将大于处理中使用的功率的第一高频功率提供给处理室以产生等离子体。将第一高频功率降低到接近于处理中使用的值的调整步骤，将第二高频功率提高到接近处理值，然后调整第一高频功率以获得等离子体预定值的强度是该方法的一部分。等离子体处理步骤是使阻抗匹配电路执行匹配操作并且同时调节第一高频功率以获得处理中期望值的等离子体强度。等离子体放电可以以高再现性自动平稳地开始，并且可以保持稳定的等离子体放电。即使在放电消失的情况下，可以快速重新开始等离子体放电。

10. 发明授权

US08221553B2 Method for producing organic light-emitting device 失效
标题翻译：生产有机发光装置的方法
公开(公告)号：US08221553B2
公开(公告)日：2012-07-17
申请号：US12468785
申请日：2009-05-19
申请人： Kumiko Kaneko , Nozomu Izumi , Koichi Matsuda , Yukito Aota , Hiroshi Sugai
发明人： Kumiko Kaneko , Nozomu Izumi , Koichi Matsuda , Yukito Aota , Hiroshi Sugai
IPC分类号： B08B7/00
CPC分类号： H01L27/3276 , H01L27/3288 , H01L51/5253 , H01L51/56 , H01L2227/326 , H01L2251/566
摘要： A method for producing an organic light-emitting device is provided for an organic light-emitting device having a substrate provided with external connection terminals, organic light-emitting elements provided on the substrate, and a protective film that covers the organic light-emitting elements. The method includes, sequentially, providing a protective film removal layer on the external connection terminals, forming the protective film on the substrate, dividing the substrate on which the protective film has been formed, and cleaning the substrate with water, an aqueous solution, or a solvent. The protective film removal layer and the protective film are removed from the external connection terminals as a result of cleaning the substrate.
摘要翻译：本发明提供一种有机发光装置的制造方法，其具有设置有外部连接端子的基板，设置在基板上的有机发光元件和覆盖有机发光元件的保护膜的有机发光装置。该方法包括依次在外部连接端子上设置保护膜去除层，在基板上形成保护膜，对已经形成有保护膜的基板进行分割，并用水，水溶液或溶剂。作为清洗基板的结果，从外部连接端子除去保护膜去除层和保护膜。

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