会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Method for determining deterioration of accumulator battery, method for measuring internal impedance of secondary battery, equipment for measuring internal impedance of secondary battery, equipment for determining deterioration of secondary battery, and power supply system
    • 蓄电池的劣化判定方法,二次电池的内部阻抗测定方法,二次电池的内部阻抗测定装置,二次电池的劣化判定装置以及电力供给系统
    • US07362074B2
    • 2008-04-22
    • US11317286
    • 2005-12-27
    • Noriyasu IwaneYuichi WatanabeTakezo SugimuraToshiyuki SatohAtsushi KimuraFumikazu IwahanaKatsumi InaniwaTetsuya Kanou
    • Noriyasu IwaneYuichi WatanabeTakezo SugimuraToshiyuki SatohAtsushi KimuraFumikazu IwahanaKatsumi InaniwaTetsuya Kanou
    • H01M10/44H01M10/46
    • G01R31/3662G01R31/3675G01R31/3679
    • A method for determining deterioration of accumulator battery hooked up with loads in a system based on results of measuring internal resistances of an accumulator battery, the method comprising the steps of; predetermining as a specified temperature a temperature at which the deterioration of the accumulator battery is determined; calculating in advance temperature correction coefficients of the internal resistances from changes of the internal resistances depending on temperatures; predetermining resistance-voltage conversion factors to convert between the internal resistances at the specified temperature and terminal discharge voltages of the accumulator battery which are obtained at the specified temperature under a condition of flowing predetermined discharge currents from the accumulator battery; measuring the internal resistances of the accumulator battery and temperature of the accumulator battery at an internal resistance measurement; converting the measured internal resistance values into the internal resistance values at the specified temperature with use of the temperature correction coefficients of the internal resistances; converting the internal resistance values at the specified temperature into the terminal discharge voltage values of the accumulator battery at the specified temperature with use of the resistance-voltage conversion factors; and determining whether the accumulator battery is deteriorated or not by means of comparison of the terminal discharge voltage values of the accumulator battery at the specified temperature and a predetermined threshold value as a deterioration judgment standard.
    • 一种用于基于测量蓄电池的内部电阻的结果来确定在系统中负载耦合的蓄电池的劣化的方法,所述方法包括以下步骤: 预先确定蓄电池电池劣化的温度为指定温度; 根据温度从内部电阻的变化中预先计算内部电阻的温度校正系数; 预先确定电阻 - 电压转换系数,以在从蓄电池流动预定的放电电流的条件下,在规定温度下获得的内部电阻和蓄电池的终端放电电压之间转换; 在内部电阻测量时测量蓄电池的内部电阻和蓄电池的温度; 使用内部电阻的温度校正系数将所测量的内部电阻值转换为指定温度下的内部电阻值; 使用电阻 - 电压转换因子将指定温度下的内部电阻值转换为指定温度下蓄电池的端子放电电压值; 并且通过将在规定温度下的蓄电池的端子排出电压值与预定阈值进行比较来判定蓄电池是否劣化为劣化判定基准。
    • 5. 发明申请
    • Image processing apparatus
    • 图像处理装置
    • US20070013947A1
    • 2007-01-18
    • US11480997
    • 2006-07-06
    • Yuichi Watanabe
    • Yuichi Watanabe
    • G06F3/12
    • G06F3/1229G06F3/1204G06F3/1285
    • An image processing apparatus capable of receiving a response with respect to an acquisition request of management information of a printing apparatus even if the printing apparatus is working. The image processing apparatus comprises a network connecting section; an interface section; a data transferring section; a management information acquiring section; a management information storing section; and a network controlling section, in the case that the printing apparatus is not working, the management information acquiring section acquires management information from the printing apparatus; in the case that the printing apparatus is working, the management information acquiring section acquires management information from the management information storing section.
    • 即使打印装置工作,也能够接收关于打印装置的管理信息的获取请求的响应的图像处理装置。 图像处理装置包括网络连接部分; 接口部分; 数据传输部分; 管理信息获取部; 管理信息存储部; 以及网络控制部,在所述打印装置不工作的情况下,所述管理信息获取部从所述打印装置取得管理信息; 在打印装置工作的情况下,管理信息获取部从管理信息存储部获取管理信息。
    • 8. 发明申请
    • Multi-function system
    • 多功能系统
    • US20060095602A1
    • 2006-05-04
    • US11259271
    • 2005-10-27
    • Yuichi Watanabe
    • Yuichi Watanabe
    • G06F3/00
    • H04N1/00204G06F3/1222G06F3/1238G06F3/1284H04N1/00347H04N1/0096H04N2201/0013H04N2201/0015H04N2201/0094
    • A multi-function system in which one of plural peripheral apparatuses is connected as a parent peripheral apparatus to an upper apparatus having a peripheral apparatus driver for making the peripheral apparatuses operative and the residual peripheral apparatuses are connected as child peripheral apparatuses to the parent peripheral apparatus. The parent peripheral apparatus has a descriptor transmitting unit which forms and transmits peripheral apparatus descriptors to device-define the parent and child peripheral apparatuses. The upper apparatus has a first control unit which activates the corresponding driver every descriptor reception and gives ID information and a data communicating unit which forms and transmits ID communication data for specifying a transmission destination of communication data to each peripheral apparatus. The parent peripheral apparatus has a peripheral apparatus control unit which analyzes the received ID communication data to discriminate a transfer destination and transfers the communication data.
    • 将多个外围设备中的一个作为父外围设备连接到具有外围设备驱动程序的上位装置的多功能系统,并且剩余外围设备作为子外围设备连接到父外围设备 。 父外围设备具有描述符发送单元,其形成并发送外围设备描述符以设备定义父和外围设备。 上位装置具有第一控制单元,其每个描述符接收激活对应的驱动器,并给出ID信息;以及数据通信单元,其形成并发送用于指定通信数据的发送目的地的ID通信数据给每个外围设备。 父外围设备具有外围设备控制单元,其分析接收的ID通信数据以区分传送目的地并传送通信数据。
    • 10. 发明申请
    • Semiconductor device manufacturing method
    • 半导体器件制造方法
    • US20050224794A1
    • 2005-10-13
    • US11087742
    • 2005-03-24
    • Naoaki TanakaYuji TsukadaYuichi Watanabe
    • Naoaki TanakaYuji TsukadaYuichi Watanabe
    • H01L21/02H01L21/28H01L21/31H01L21/3205H01L21/321H01L21/3213H01L21/768H01L21/78H01L29/04
    • H01L21/32137H01L21/02087H01L21/32115H01L21/7684
    • The invention provides a method of forming an electrode or wiring which prevents reattachment of an etching residue in following processes by removing the etching residue at a bevel portion of a semiconductor wafer. An insulation film is formed so as to cover a front surface and a back surface of a semiconductor wafer, and then a conductive film is formed on a whole surface of the insulation film. Next, a photoresist layer is selectively formed on the conductive film by an exposure and development process. The conductive film is then selectively removed by an isotropic etching with using this photoresist layer as a mask, thereby forming an electrode or wiring of a semiconductor device. Since the electrode or the wiring of the semiconductor device is formed by isotropically etching the conductive film, a hangnail-like etching residue causing dust does not occur at the bevel portion of the wafer even though the conductive film remains on the back side of the semiconductor wafer.
    • 本发明提供一种形成电极或布线的方法,其通过去除半导体晶片的斜面部分处的蚀刻残留物来防止在后面的过程中重新附着蚀刻残留物。 形成绝缘膜以覆盖半导体晶片的前表面和后表面,然后在绝缘膜的整个表面上形成导电膜。 接下来,通过曝光和显影处理在导电膜上选择性地形成光致抗蚀剂层。 然后通过使用该光致抗蚀剂层作为掩模的各向同性蚀刻选择性地去除导电膜,从而形成半导体器件的电极或布线。 由于半导体器件的电极或布线通过各向同性地蚀刻导电膜而形成,因此即使导电膜保留在半导体的背面,也不会在晶片的斜面部分处产生引起灰尘的吊坠状蚀刻残留物 晶圆。