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    • 6. 发明授权
    • Digital signal receiving apparatus
    • 数字信号接收装置
    • US08050364B2
    • 2011-11-01
    • US12270453
    • 2008-11-13
    • Tomohiro YamamotoAkira FuruhashiTakahiro HorieYuichi MurakamiKazunori OnoFrederic CoutantTarik Aouine
    • Tomohiro YamamotoAkira FuruhashiTakahiro HorieYuichi MurakamiKazunori OnoFrederic CoutantTarik Aouine
    • H04L27/06
    • H04B1/123
    • A digital signal receiving apparatus includes: detection-judging portion judging a possible presence of a desired signal when a signal level of a smoothed signal is greater than a reference level; wherein said first smoothed signal and said second smoothed signal are compared in order to generate a detection signal representing a judgment of a possible presence of a desired signal, said second smoothed signal having a convergence speed slower than that of the first smoothing filter, a filter controlling portion switching an adaptive filter from an adaptive mode to a non-adaptive mode when the detection-judging portion judges the possible presence of the desired signal and switching from the non-adaptive mode to the adaptive mode when the detection-judging portion judges the absence of the desired signal; a limiting portion limiting a signal level of an auto-correlation signal to the signal level of the smoothed signal; and a demodulating portion demodulating the auto-correlation signal having the signal level limited by the limiting means so as to generate a demodulated signal, wherein the input to the demodulator is limited to the level of a smoothed signal, said smoothed signal being generated from the input of the detection judging portion.
    • 数字信号接收装置包括:检测判断部分,当平滑信号的信号电平大于参考电平时,判断可能存在的期望信号; 其中所述第一平滑信号和所述第二平滑信号被比较以产生表示对所需信号的可能存在的判断的检测信号,所述第二平滑信号的收敛速度比第一平滑滤波器的收敛速度慢;滤波器 当检测判断部分判断出所需信号的可能存在并且从非自适应模式切换到自适应模式时,控制部分将自适应滤波器从自适应模式切换到非自适应模式 没有所需信号; 限制部分,将自相关信号的信号电平限制到平滑信号的信号电平; 以及解调部分,对具有由限制装置限制的信号电平的自相关信号进行解调,以产生解调信号,其中将解调器的输入限制为平滑信号的电平,所述平滑信号从 检测判断部分的输入。
    • 8. 发明申请
    • DIGITAL SIGNAL RECEIVING APPARATUS
    • 数字信号接收装置
    • US20090129520A1
    • 2009-05-21
    • US12270453
    • 2008-11-13
    • Tomohiro YAMAMOTOAkira FuruhashiTakahiro HorieYuichi MurakamiKazunori OnoFrederic CoutantTarik Aouine
    • Tomohiro YAMAMOTOAkira FuruhashiTakahiro HorieYuichi MurakamiKazunori OnoFrederic CoutantTarik Aouine
    • H04B1/10
    • H04B1/123
    • A digital signal receiving apparatus includes: detection-judging portion judging a possible presence of a desired signal when a signal level of a smoothed signal is greater than a reference level; wherein said first smoothed signal and said second smoothed signal are compared in order to generate a detection signal representing a judgment of a possible presence of a desired signal, said second smoothed signal having a convergence speed slower than that of the first smoothing filter, a filter controlling portion switching an adaptive filter from an adaptive mode to a non-adaptive mode when the detection-judging portion judges the possible presence of the desired signal and switching from the non-adaptive mode to the adaptive mode when the detection-judging portion judges the absence of the desired signal; a limiting portion limiting a signal level of an auto-correlation signal to the signal level of the smoothed signal; and a demodulating portion demodulating the auto-correlation signal having the signal level limited by the limiting means so as to generate a demodulated signal, wherein the input to the demodulator is limited to the level of a smoothed signal, said smoothed signal being generated from the input of the detection judging portion.
    • 数字信号接收装置包括:检测判断部分,当平滑信号的信号电平大于参考电平时,判断可能存在的期望信号; 其中所述第一平滑信号和所述第二平滑信号被比较以产生表示对所需信号的可能存在的判断的检测信号,所述第二平滑信号的收敛速度比第一平滑滤波器的收敛速度慢;滤波器 当检测判断部分判断出所需信号的可能存在并且从非自适应模式切换到自适应模式时,控制部分将自适应滤波器从自适应模式切换到非自适应模式 没有所需信号; 限制部分,将自相关信号的信号电平限制到平滑信号的信号电平; 以及解调部分,对具有由限制装置限制的信号电平的自相关信号进行解调,以产生解调信号,其中将解调器的输入限制为平滑信号的电平,所述平滑信号从 检测判断部分的输入。
    • 10. 发明申请
    • METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造转移掩模的方法和制造半导体器件的方法
    • US20110217635A1
    • 2011-09-08
    • US13122680
    • 2010-10-08
    • Masahiro HashimotoKazuya SakaiToshiyuki SuzukiKazunori Ono
    • Masahiro HashimotoKazuya SakaiToshiyuki SuzukiKazunori Ono
    • G03F1/00
    • G03F1/46G03F1/54G03F1/80G03F1/82
    • The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
    • 本发明是一种使用掩模坯料制造转印掩模的方法,其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中,通过以下顺序,通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模,在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜,使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序,以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗,热水清洗和含臭氧水清洗中的至少一种的清洗处理,直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。