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1. 发明授权

US08354729B2 Gas sensor and manufacturing method thereof 有权
标题翻译：气体传感器及其制造方法
公开(公告)号：US08354729B2
公开(公告)日：2013-01-15
申请号：US12979002
申请日：2010-12-27
申请人： Yu Sheng Hsieh , Jing Yuan Lin , Shang Chian Su
发明人： Yu Sheng Hsieh , Jing Yuan Lin , Shang Chian Su
IPC分类号： H01L41/08
CPC分类号： H01L29/84 , B81C1/00158 , B81C1/00182 , B81C1/0019 , G01N27/04 , G01N27/128 , G01N33/0036 , H01L41/1136
摘要： A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.
摘要翻译：一种气体传感器制造方法，包括以下步骤：提供包括氧化物层，器件层和载体的SOI衬底，其中所述氧化物层设置在所述器件层和所述载体之间; 蚀刻器件层以形成集成电路区域，外部区域，沟槽和导电线路，该导线包括连接到集成电路区域的连接臂，沟槽围绕导电线形成并被挖掘到氧化物层为了降低加热器电路的功耗，连接臂越过集成电路区域和外部区域之间的间隙，并且电连接到集成电路区域; 在电路区域上涂覆或压印感测材料; 并且蚀刻载体和氧化物层以形成空腔，以通过悬臂连接臂形成悬浮在空腔中的膜结构。

2. 发明申请

US20120161253A1 GAS SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：气体传感器及其制造方法
公开(公告)号：US20120161253A1
公开(公告)日：2012-06-28
申请号：US12979002
申请日：2010-12-27
申请人： Yu Sheng HSIEH , Jing Yuan Lin , Shang Chian Su
发明人： Yu Sheng HSIEH , Jing Yuan Lin , Shang Chian Su
IPC分类号： H01L29/66 , H01L21/30
CPC分类号： H01L29/84 , B81C1/00158 , B81C1/00182 , B81C1/0019 , G01N27/04 , G01N27/128 , G01N33/0036 , H01L41/1136
摘要： A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.
摘要翻译：一种气体传感器制造方法，包括以下步骤：提供包括氧化物层，器件层和载体的SOI衬底，其中所述氧化物层设置在所述器件层和所述载体之间; 蚀刻器件层以形成集成电路区域，外部区域，沟槽和导电线路，该导线包括连接到集成电路区域的连接臂，沟槽围绕导电线形成并被挖掘到氧化物层为了降低加热器电路的功耗，连接臂越过集成电路区域和外部区域之间的间隙，并且电连接到集成电路区域; 在电路区域上涂覆或压印感测材料; 并且蚀刻载体和氧化物层以形成空腔，以通过悬臂连接臂形成悬浮在空腔中的膜结构。

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