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    • 5. 发明授权
    • Image sensor and method for fabricating the same
    • 图像传感器及其制造方法
    • US07883925B2
    • 2011-02-08
    • US11947496
    • 2007-11-29
    • Jung-Bae Kim
    • Jung-Bae Kim
    • H01L21/00H01L27/14
    • H01L27/14685H01L27/14625H01L27/14636
    • An image sensor can include a plurality of photodiodes and a plurality of transistors formed in a semiconductor substrate; a first interlayer insulating layer formed over the semiconductor substrate; a plurality of metal lines formed over the first interlayer insulating layer, electrically connected with the photodiodes and the transistors; a plurality of interlayer insulating layers including an upper interlayer insulating layer and a lower interlayer insulating layer formed over the semiconductor substrate including the metal lines, wherein refractive indexes of the upper interlayer insulating layer and the lower interlayer insulating layer are different from each other; a plurality of color filters formed over the plurality of interlayer insulating layers and which correspond to the photodiodes, respectively; a planarization layer formed over the semiconductor substrate including the color filters; and a plurality of microlenses formed over the planarization layer and which corresponds to the color filters, respectively.
    • 图像传感器可以包括形成在半导体衬底中的多个光电二极管和多个晶体管; 形成在所述半导体衬底上的第一层间绝缘层; 多个金属线,形成在所述第一层间绝缘层上,与所述光电二极管和所述晶体管电连接; 多个层间绝缘层,包括形成在包括金属线的半导体衬底上的上层间绝缘层和下层间绝缘层,其中上层间绝缘层和下层间绝缘层的折射率彼此不同; 多个滤色器,分别形成在所述多个层间绝缘层上并分别对应于所述光电二极管; 形成在包括所述滤色器的所述半导体衬底上的平坦化层; 以及形成在平坦化层上并分别对应于滤色器的多个微透镜。
    • 7. 发明申请
    • IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    • 图像传感器及其制造方法
    • US20080150055A1
    • 2008-06-26
    • US11947496
    • 2007-11-29
    • Jung-Bae Kim
    • Jung-Bae Kim
    • H01L31/00H01L21/00
    • H01L27/14685H01L27/14625H01L27/14636
    • An image sensor can include a plurality of photodiodes and a plurality of transistors formed in a semiconductor substrate; a first interlayer insulating layer formed over the semiconductor substrate; a plurality of metal lines formed over the first interlayer insulating layer, electrically connected with the photodiodes and the transistors; a plurality of interlayer insulating layers including an upper interlayer insulating layer and a lower interlayer insulating layer formed over the semiconductor substrate including the metal lines, wherein refractive indexes of the upper interlayer insulating layer and the lower interlayer insulating layer are different from each other; a plurality of color filters formed over the plurality of interlayer insulating layers and which correspond to the photodiodes, respectively; a planarization layer formed over the semiconductor substrate including the color filters; and a plurality of microlenses formed over the planarization layer and which corresponds to the color filters, respectively.
    • 图像传感器可以包括形成在半导体衬底中的多个光电二极管和多个晶体管; 形成在所述半导体衬底上的第一层间绝缘层; 多个金属线,形成在所述第一层间绝缘层上,与所述光电二极管和所述晶体管电连接; 多个层间绝缘层,包括形成在包括金属线的半导体衬底上的上层间绝缘层和下层间绝缘层,其中上层间绝缘层和下层间绝缘层的折射率彼此不同; 多个滤色器,分别形成在所述多个层间绝缘层上并分别对应于所述光电二极管; 形成在包括所述滤色器的所述半导体衬底上的平坦化层; 以及形成在平坦化层上并分别对应于滤色器的多个微透镜。
    • 8. 发明授权
    • Solenoid valve
    • 电磁阀
    • US5704395A
    • 1998-01-06
    • US705088
    • 1996-08-29
    • Jung-Bae Kim
    • Jung-Bae Kim
    • B60T8/36B60T15/02F16K31/06F15B13/044
    • F16K31/0631B60T15/028B60T8/3635F16K31/0606Y10T137/86622
    • A 2-position 3-way solenoid valve provided with one plunger and ports arranged in a half portion of the valve in its longitudinal direction is disclosed. The valve includes a valve body having a base with first and second ports and open and closed ends, a housing being hermetically coupled to the base and having a third port, and a cover for closing an end of the housing, the valve body having a chamber therein. The first and second ports are directly communicated with the chamber, and the third port is communicated with the chamber through a flow passage extending to the cover from the housing. A hollow cylindrical sleeve is disposed within the valve body, extending from the housing to the base. A plunger having balls each fixed at both ends thereof is movably disposed within the chamber. On the circumference of the plunger, a plurality of grooves are formed in its longitudinal direction.
    • 公开了一种两位三通电磁阀,其具有一个柱塞和沿其纵向方向布置在阀的半部分中的端口。 该阀包括具有第一和第二端口以及开放和封闭端的基座的阀体,壳体与底座气密地联接并具有第三端口,以及用于封闭壳体的端部的盖,阀体具有 在其中。 第一和第二端口与腔室直接连通,并且第三端口通过从壳体延伸到盖子的流动通道与腔室连通。 中空圆柱形套筒设置在阀体内,从壳体延伸到底座。 具有各自固定在其两端的球的柱塞可移动地设置在腔室内。 在柱塞的圆周上,沿其长度方向形成多个槽。