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1. 发明申请

US20100091163A1 Image Sensor Having Enhanced Backside Illumination Quantum Efficiency 有权
标题翻译：具有增强的背光照明量子效率的图像传感器
公开(公告)号：US20100091163A1
公开(公告)日：2010-04-15
申请号：US12557154
申请日：2009-09-10
申请人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H04N5/335 , H01L31/0232
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
摘要翻译：公开了一种用于图像感测的系统和方法。实施例包括具有像素区域和逻辑区域的基板。在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触逻辑区域。在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

2. 发明授权

US09041841B2 Image sensor having enhanced backside illumination quantum efficiency 有权
标题翻译：具有增强的背面照明量子效率的图像传感器
公开(公告)号：US09041841B2
公开(公告)日：2015-05-26
申请号：US12557154
申请日：2009-09-10
申请人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
摘要翻译：公开了一种用于图像感测的系统和方法。实施例包括具有像素区域和逻辑区域的基板。在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触逻辑区域。在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

3. 发明申请

US20110081766A1 METHOD FOR DOPING A SELECTED PORTION OF A DEVICE 有权
标题翻译：用于对设备的选定部分进行排序的方法
公开(公告)号：US20110081766A1
公开(公告)日：2011-04-07
申请号：US12572833
申请日：2009-10-02
申请人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
发明人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
IPC分类号： H01L21/762
CPC分类号： H01L27/14683 , H01L21/2652 , H01L21/266 , H01L21/76232 , H01L27/14627 , H01L27/1463
摘要： A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.
摘要翻译：一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

4. 发明授权

US08440540B2 Method for doping a selected portion of a device 有权
标题翻译：掺杂设备的选定部分的方法
公开(公告)号：US08440540B2
公开(公告)日：2013-05-14
申请号：US12572833
申请日：2009-10-02
申请人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
发明人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
IPC分类号： H01L21/76
CPC分类号： H01L27/14683 , H01L21/2652 , H01L21/266 , H01L21/76232 , H01L27/14627 , H01L27/1463
摘要： A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.
摘要翻译：一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

5. 发明申请

US20100243868A1 METHOD AND APPARATUS OF IMPROVING EFFICIENCY OF AN IMAGE SENSOR 有权
标题翻译：提高图像传感器效率的方法和装置
公开(公告)号：US20100243868A1
公开(公告)日：2010-09-30
申请号：US12415580
申请日：2009-03-31
申请人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
发明人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L31/0232 , B32B37/02
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的装置基板。器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。图像传感器还包括形成在器件衬底的前侧上的第一层。第一层具有第一折射率和第一折射率的函数的第一厚度。图像传感器还具有形成在第一层上的第二层。第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。

6. 发明授权

US08604405B2 Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same 有权
$Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same$
标题翻译：具有折射率依赖层厚度的背面照明图像传感器装置及其形成方法
公开(公告)号：US08604405B2
公开(公告)日：2013-12-10
申请号：US12415580
申请日：2009-03-31
申请人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
发明人： Han-Chi Liu , Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L27/00 , H01J40/14
CPC分类号： H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L31/02165
摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有正面和背面的装置基板。器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。图像传感器还包括形成在器件衬底的前侧上的第一层。第一层具有第一折射率和第一折射率的函数的第一厚度。图像传感器还具有形成在第一层上的第二层。第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。

7. 发明授权

US10090349B2 CMOS image sensor chips with stacked scheme and methods for forming the same 有权
公开(公告)号：US10090349B2
公开(公告)日：2018-10-02
申请号：US13571099
申请日：2012-08-09
申请人： Meng-Hsun Wan , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Meng-Hsun Wan , Szu-Ying Chen , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146
摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

8. 发明授权

US09177986B2 Isolation for semiconductor devices 有权
标题翻译：半导体器件隔离
公开(公告)号：US09177986B2
公开(公告)日：2015-11-03
申请号：US13598275
申请日：2012-08-29
申请人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
发明人： Wen-I Hsu , Min-Feng Kao , Jen-Cheng Liu , Dun-Nian Yaung , Tzu-Hsuan Hsu , Wen-De Wang
IPC分类号： H01L29/00 , H01L27/146 , H01L29/06 , H01L21/762
CPC分类号： H01L27/14689 , H01L21/761 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L29/0649
摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.
摘要翻译：提供一种用于隔离半导体器件的系统和方法。一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的电介质材料。可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

9. 发明授权

US09048162B2 CMOS image sensors and methods for forming the same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US09048162B2
公开(公告)日：2015-06-02
申请号：US13615071
申请日：2012-09-13
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Hsiao-Hui Tseng , Tzu-Hsuan Hsu
IPC分类号： H01L31/02 , H01L27/146 , H01L31/18 , H01L31/103
CPC分类号： H01L31/18 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14689 , H01L31/02 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.
摘要翻译：一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。第一掺杂区域是第一导电类型，并具有第一杂质浓度。第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。第二掺杂区域包围第一掺杂区域。第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

10. 发明授权

US09013022B2 Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips 有权
标题翻译：衬垫结构包括BSI图像传感器芯片中的胶层和非低k电介质层
公开(公告)号：US09013022B2
公开(公告)日：2015-04-21
申请号：US13198111
申请日：2011-08-04
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Shuang-Ji Tsai , Yueh-Chiou Lin
IPC分类号： H01L31/00 , H01L23/00 , H01L23/48 , H01L27/146 , H01L21/768 , H01L23/525
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L24/83 , H01L27/14623 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14683 , H01L27/14685 , H01L27/14689 , H01L2224/02166 , H01L2224/04042 , H01L2224/0557 , H01L2224/05571 , H01L2224/05572 , H01L2224/05624 , H01L2224/1134 , H01L2224/11916 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/83359 , H01L2924/00014 , H01L2924/01013 , H01L2924/10253 , H01L2924/13091 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/05552 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad is underlying the first non-low-k dielectric layer. A second non-low-k dielectric layer is underlying the metal pad. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, wherein the opening lands on a top surface of the metal pad. A passivation layer includes a portion on a sidewall of the opening, wherein a portion of the passivation layer at a bottom of the opening is removed.
摘要翻译：集成电路结构包括半导体衬底和从半导体衬底的底表面延伸到半导体衬底中的介质衬垫。低k电介质层设置在半导体衬底下方。第一个非低k电介质层位于低k电介质层的下面。金属焊盘位于第一非低k电介质层的下面。第二个非低k电介质层位于金属焊盘的下方。开口从半导体衬底的顶表面向下延伸以穿透半导体衬底，电介质衬垫和低k电介质层，其中，开口焊接在金属衬垫的顶表面上。钝化层包括在开口的侧壁上的部分，其中去除开口底部的钝化层的一部分。

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