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    • 4. 发明申请
    • Pixels for CMOS image sensors
    • CMOS图像传感器的像素
    • US20060261431A1
    • 2006-11-23
    • US11436278
    • 2006-05-18
    • Yi-Tae KimYoung-Chan KimHae-Kyung KongSung-Ho Choi
    • Yi-Tae KimYoung-Chan KimHae-Kyung KongSung-Ho Choi
    • H01L31/06
    • H01L27/14609H04N5/3559H04N5/3597H04N5/3745H04N5/37457
    • A unit pixel of a complementary metal-oxide semiconductor (CMOS) image sensor includes a photoelectric conversion element, a transfer transistor, a boosting capacitor and a signal transfer circuit, where the photoelectric conversion element generates a charge based on incident light, the transfer transistor transfers the charge to a floating diffusion node in response to a transfer control signal, the boosting capacitor is disposed between a gate of the transfer transistor and the floating diffusion node, the signal transfer circuit transfers an electric potential of the floating diffusion node in response to a selection signal, and a dynamic range of the electric potential of the floating diffusion node may be widened and a drain-source voltage difference of the transfer transistor may be increased so that the charge transfer efficiency may be enhanced.
    • 互补金属氧化物半导体(CMOS)图像传感器的单位像素包括光电转换元件,转移晶体管,升压电容器和信号传输电路,其中光电转换元件基于入射光产生电荷,转移晶体管 响应于转移控制信号将电荷转移到浮动扩散节点,升压电容器设置在转移晶体管的栅极和浮动扩散节点之间,信号传输电路响应于 可以加宽选择信号和浮动扩散节点的电位的动态范围,并且可以增加转移晶体管的漏极 - 源极电压差,从而可以提高电荷转移效率。