专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120211812A1 HIGH-SPEED HIGH-POWER SEMICONDUCTOR DEVICES 有权
标题翻译：高速大功率半导体器件
公开(公告)号：US20120211812A1
公开(公告)日：2012-08-23
申请号：US13103918
申请日：2011-05-09
申请人： Yang Du , Vladimir Aparin , Robert P. Gilmore
发明人： Yang Du , Vladimir Aparin , Robert P. Gilmore
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L29/0653 , H01L29/0692 , H01L29/1045 , H01L29/402 , H01L29/42384 , H01L29/66659 , H01L29/66689 , H01L29/7824 , H01L29/7835 , H01L29/78624 , H01L29/78645
摘要： High-speed high-power semiconductor devices are disclosed. In an exemplary design, a high-speed high-power semiconductor device includes a source, a drain to provide an output signal, and an active gate to receive an input signal. The semiconductor device further includes at least one field gate located between the active gate and the drain, at least one shallow trench isolation (STI) strip formed transverse to the at least one field gate, and at least one drain active strip formed parallel to, and alternating with, the at least one STI strip. The semiconductor device may be modeled by a combination of an active FET and a MOS varactor. The active gate controls the active FET, and the at least one field gate controls the MOS varactor. The semiconductor device has a low on resistance and can handle a high voltage.
摘要翻译：公开了高速大功率半导体器件。在示例性设计中，高速大功率半导体器件包括源极，提供输出信号的漏极和用于接收输入信号的有源栅极。所述半导体器件还包括位于有源栅极和漏极之间的至少一个场栅极，至少一个横向于至少一个场栅极形成的浅沟槽隔离（STI）条和至少一个平行于该栅极的漏极有源条，并与所述至少一个STI条交替。半导体器件可以通过有源FET和MOS变容二极管的组合来建模。有源栅极控制有源FET，并且至少一个场门控制MOS变容二极管。半导体器件具有低导通电阻并且可以处理高电压。

2. 发明授权

US09543383B2 High-speed high-power semiconductor devices 有权
标题翻译：高速大功率半导体器件
公开(公告)号：US09543383B2
公开(公告)日：2017-01-10
申请号：US13103918
申请日：2011-05-09
申请人： Yang Du , Vladimir Aparin , Robert P. Gilmore
发明人： Yang Du , Vladimir Aparin , Robert P. Gilmore
IPC分类号： H01L29/40 , H01L29/06 , H01L29/66 , H01L29/78 , H01L29/423 , H01L29/786 , H01L29/10
CPC分类号： H01L29/0653 , H01L29/0692 , H01L29/1045 , H01L29/402 , H01L29/42384 , H01L29/66659 , H01L29/66689 , H01L29/7824 , H01L29/7835 , H01L29/78624 , H01L29/78645
摘要： High-speed high-power semiconductor devices are disclosed. In an exemplary design, a high-speed high-power semiconductor device includes a source, a drain to provide an output signal, and an active gate to receive an input signal. The semiconductor device further includes at least one field gate located between the active gate and the drain, at least one shallow trench isolation (STI) strip formed transverse to the at least one field gate, and at least one drain active strip formed parallel to, and alternating with, the at least one STI strip. The semiconductor device may be modeled by a combination of an active FET and a MOS varactor. The active gate controls the active FET, and the at least one field gate controls the MOS varactor. The semiconductor device has a low on resistance and can handle a high voltage.
摘要翻译：公开了高速大功率半导体器件。在示例性设计中，高速大功率半导体器件包括源极，提供输出信号的漏极和用于接收输入信号的有源栅极。所述半导体器件还包括位于有源栅极和漏极之间的至少一个场栅极，至少一个横向于至少一个场栅极形成的浅沟槽隔离（STI）条和至少一个平行于该栅极的漏极有源条，并与所述至少一个STI条交替。半导体器件可以通过有源FET和MOS变容二极管的组合来建模。有源栅极控制有源FET，并且至少一个场门控制MOS变容二极管。半导体器件具有低导通电阻并且可以处理高电压。

3. 发明申请

US20220388669A1 Aircraft Safety Livesaving System 有权
公开(公告)号：US20220388669A1
公开(公告)日：2022-12-08
申请号：US17373275
申请日：2021-07-12
申请人： Di Du , Yang Du
发明人： Di Du , Yang Du
IPC分类号： B64D25/00 , B64D17/80 , B64C25/60 , B64C27/30 , B64D41/00
摘要： An aircraft safety lifesaving system, disclosing an aircraft body, wherein an openable safety cabin is provided at the top of the aircraft body, a deceleration device is provided in the safety cabin, and the deceleration device is capable of being ejected from the safety cabin to enable the aircraft body to decelerate and land; a damping and buffering mechanism provided at the bottom of the aircraft body, the damping and buffering mechanism is telescopically provided in the vertical direction, and the damping and buffering mechanism is capable of extending to the position below the aircraft wheel body. A safety cabin is provided at the top of the aircraft body, and a deceleration device in the safety cabin is ejected in an emergency to assist the aircraft body to decelerate; the damping and buffering mechanism extends below the wheel body, and the damping and buffering mechanism contacts with the ground first.

4. 发明授权

US09578762B2 Television monitor combination stand and wall mount 有权
标题翻译：电视监视器组合支架和墙壁安装
公开(公告)号：US09578762B2
公开(公告)日：2017-02-21
申请号：US14753492
申请日：2015-06-29
申请人： Timothy M. Cassidy , Yang Du , He Kaizuan
发明人： Timothy M. Cassidy , Yang Du , He Kaizuan
IPC分类号： F16M13/00 , H05K5/02 , F16M11/38 , A47B85/00 , A47B97/00 , F16M11/10 , F16M13/02 , A47B81/06 , H05K5/00
CPC分类号： H05K5/0204 , A47B81/06 , A47B85/00 , A47B97/001 , A47B2097/005 , F16M11/10 , F16M11/38 , F16M13/00 , F16M13/02 , F16M2200/08 , H05K5/0017
摘要： A combination television monitor stand and wall mount is presented. The combination stand and mount has an assembly of parts that can be assembled into two different configurations. The parts assembly includes a base plate, brackets, screws, and a stand cover. In a stand configuration, the described apparatus functions as a table stand for a television or computer monitor. In a wall mount configuration, the described apparatus allows a monitor to be mounted to a wall. A second embodiment provides a stand configuration having a neck pivotably attached to a base plate by a hinge, and a locking lever arm supporting the neck when the neck is in an upright position.
摘要翻译：介绍了电视监视器支架和壁挂式组合。组合支架和安装座具有可组装成两种不同配置的部件组合。零件组件包括底板，托架，螺钉和支架盖。在支架配置中，所描述的装置用作电视或计算机监视器的表格。在壁挂式结构中，所述装置允许将监视器安装在墙壁上。第二实施例提供一种支架构造，其具有通过铰链可枢转地连接到基板的颈部，以及当颈部处于直立位置时支撑颈部的锁定杆臂。

5. 发明授权

US09072379B2 Television monitor combination stand and wall mount 有权
标题翻译：电视监视器组合支架和墙壁安装
公开(公告)号：US09072379B2
公开(公告)日：2015-07-07
申请号：US14048550
申请日：2013-10-08
申请人： Timothy M. Cassidy , Yang Du , He Kaizuan
发明人： Timothy M. Cassidy , Yang Du , He Kaizuan
IPC分类号： E04G3/00 , A47B97/00 , A47B85/00 , F16M11/38 , F16M13/00
CPC分类号： H05K5/0204 , A47B81/06 , A47B85/00 , A47B97/001 , A47B2097/005 , F16M11/10 , F16M11/38 , F16M13/00 , F16M13/02 , F16M2200/08 , H05K5/0017
摘要： A combination television monitor stand and wall mount is presented. The combination stand and mount has an assembly of parts that can be assembled into two different configurations. The parts assembly includes a base plate, brackets, screws, and a stand cover. In a stand configuration, the described apparatus functions as a table stand for a television or computer monitor. In a wall mount configuration, the described apparatus allows a monitor to be mounted to a wall. A second embodiment provides a stand configuration having a neck pivotably attached to a base plate by a hinge, and a locking lever arm supporting the neck when the neck is in an upright position.
摘要翻译：介绍了电视监视器支架和壁挂式组合。组合支架和安装座具有可组装成两种不同配置的部件组合。零件组件包括底板，托架，螺钉和支架盖。在支架配置中，所描述的装置用作电视或计算机监视器的表格。在壁挂式结构中，所述装置允许将监视器安装在墙壁上。第二实施例提供一种支架构造，其具有通过铰链可枢转地连接到基板的颈部，以及当颈部处于直立位置时支撑颈部的锁定杆臂。

6. 发明申请

US20060197140A1 Vertical transistor NVM with body contact structure and method 审中-公开
标题翻译：垂直晶体管NVM具有体接触结构和方法
公开(公告)号：US20060197140A1
公开(公告)日：2006-09-07
申请号：US11072878
申请日：2005-03-04
申请人： Ramachandran Muralidhar , Yang Du , Leo Mathew
发明人： Ramachandran Muralidhar , Yang Du , Leo Mathew
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L29/40114 , H01L29/66825 , H01L29/7851 , H01L29/7881
摘要： A semiconductor device (151) is provided which comprises (a) a semiconductor substrate (103); (b) a fin (109) comprising a semiconductor material and being in electrical contact with the substrate; (c) a first floating gate (121) disposed on a first side of said fin; and (d) a control gate (107).
摘要翻译：提供半导体器件（151），其包括（a）半导体衬底（103）; （b）包括半导体材料并与基底电接触的翅片（109）; （c）设置在所述散热片的第一侧上的第一浮动栅极（121）和（d）控制门（107）。

7. 发明申请

US20050124120A1 Method and circuit for multiplying signals with a transistor having more than one independent gate structure 失效
公开(公告)号：US20050124120A1
公开(公告)日：2005-06-09
申请号：US10728621
申请日：2003-12-05
申请人： Yang Du , Leo Mathew
发明人： Yang Du , Leo Mathew
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/84 , H01L29/423 , H01L29/786 , H01L29/80 , H01L21/3205 , H01L21/4763 , H01L31/112
CPC分类号： H01L29/42384 , H01L21/823437 , H01L21/84 , H01L29/66818 , H01L29/785
摘要： A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.

8. 发明申请

US20220388668A1 Aircraft Safety Livesaving System 有权
公开(公告)号：US20220388668A1
公开(公告)日：2022-12-08
申请号：US17574772
申请日：2022-01-13
申请人： Di Du , Yang Du
发明人： Di Du , Yang Du , Tong Du
IPC分类号： B64D17/80 , B64C25/60 , B64C1/06 , B64C11/00 , B64D27/24 , B60L50/60 , B64C3/54 , B64D25/08 , B64D27/10
摘要： An aircraft safety lifesaving system, which includes an aircraft body, wherein an openable safety cabin is provided at the top of the aircraft body, a deceleration device is provided in the safety cabin, and the deceleration device is capable of being ejected from the safety cabin to enable the aircraft body to decelerate and land; a damping and buffering mechanism is provided at the bottom of the aircraft body, the damping and buffering mechanism is telescopically provided in the vertical direction, and the damping and buffering mechanism is capable of extending to the position below the aircraft wheel body.

9. 发明申请

US20060170016A1 Asymmetric spacers and asymmetric source/drain extension layers 有权
标题翻译：非对称隔离层和不对称源极/漏极延伸层
公开(公告)号：US20060170016A1
公开(公告)日：2006-08-03
申请号：US11047946
申请日：2005-02-01
申请人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4983 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66659 , H01L29/7843
摘要： A method of forming a semiconductor device is provided in which a substrate (102) is provided which has a gate dielectric layer (106) disposed thereon, and a gate electrode (116) having first and second sidewalls is formed over the gate dielectric layer. First (146) and second (150) extension spacer structures are formed adjacent the first and second sidewalls, respectively. In the resulting device: (a) the first and second extension spacer structures have different dimensions; (b) the first and second extension spacer structures comprise first and second distinct materials; (c) the device has asymmetric source/drain extensions (162); and/or (d) the device has an oxide layer (160) disposed between the first extension spacer structure and the gate electrode, and either (i) the device has no dielectric layer disposed between the second extension spacer structure and the gate electrode, or (ii) the device has a second dielectric layer disposed between the second extension spacer structure and the gate electrode, and the first dielectric layer is substantially thicker than the second dielectric layer.
摘要翻译：提供一种形成半导体器件的方法，其中设置有其上设置有栅介质层（106）的衬底（102），并且在栅极介电层上形成具有第一和第二侧壁的栅电极（116）。分别在第一和第二侧壁附近形成第一（146）和第二（150）延伸间隔结构。在所得装置中：（a）第一和第二延伸间隔结构具有不同的尺寸; （b）第一和第二延伸间隔结构包括第一和第二不同材料; （c）该器件具有不对称的源极/漏极延伸部分（162）; 和/或（d）所述器件具有设置在所述第一延伸间隔物结构和所述栅电极之间的氧化物层（160），以及（i）所述器件在所述第二延伸间隔物结构和所述栅电极之间没有设置介电层，或者（ii）该器件具有设置在第二延伸间隔物结构和栅极之间的第二介电层，并且第一介电层基本上比第二介电层更厚。

10. 发明授权

US06969656B2 Method and circuit for multiplying signals with a transistor having more than one independent gate structure 失效
标题翻译：用于将信号与具有多于一个独立栅极结构的晶体管相乘的方法和电路
公开(公告)号：US06969656B2
公开(公告)日：2005-11-29
申请号：US10728621
申请日：2003-12-05
申请人： Yang Du , Leo Mathew
发明人： Yang Du , Leo Mathew
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/84 , H01L29/423 , H01L29/786
CPC分类号： H01L29/42384 , H01L21/823437 , H01L21/84 , H01L29/66818 , H01L29/785
摘要： A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.
摘要翻译：双门半导体器件（2006）有效地用作乘法器（2000）。双栅极半导体器件（2006）具有作为沟道区域的侧鳍（105），栅极的两侧具有彼此相对的栅极。翅片的横向定位在两个门之间提供对称性。为了增加驱动电流，多个晶体管通过具有连续的鳍状结构（2106）容易地并联连接，其中源极连接在一起并且漏极连接在一起，其具有交替的源极/漏极端子（2120,2122,2124,2126）。门（2116,2110）位于每对相邻的源极/漏极端子之间并电连接在一起。乘法器（2000）也可以用作混频器，并且还可以用作相位检测器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式