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1. 发明授权

US06815345B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing 失效
标题翻译：基于半导体晶片制造中的测试结构的通孔/接触孔蚀刻工艺的在线监测方法
公开(公告)号：US06815345B2
公开(公告)日：2004-11-09
申请号：US10302809
申请日：2002-11-21
申请人： Yan Zhao , Chang-Chun (Roland) Yeh , Zhongwei Chen , Jack Jau
发明人： Yan Zhao , Chang-Chun (Roland) Yeh , Zhongwei Chen , Jack Jau
IPC分类号： H01L2144
CPC分类号： H01L22/34 , H01L21/76802 , H01L22/24
摘要： A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.
摘要翻译：描述了一种基于测试结构进行通孔/接触蚀刻工艺在线监测的方法。测试结构由布局不同尺寸和密度的通孔/接触孔组成，使得对于某些工艺，微加载或RIE滞后引起的不均匀蚀刻速率在一些区域产生蚀刻不良并且在其它区域中过度蚀刻。使用扫描电子显微镜来区分电压对比图像中的这些蚀刻差异。图像处理和简单校准将这些电压对比图像转换成表征蚀刻工艺的“指纹”图像，就厚度过蚀刻或欠蚀刻而言。该图像的偏移或变形的公差可以设置为验证过程的均匀性。该图像也可用作监视长期过程参数移位以及晶圆到晶圆或批次间变化的度量。先进的过程控制（APC）可以与该图像的引导一起进行，以便避免潜在的电气缺陷，加速产出斜率。

2. 发明授权

US08791414B2 Dynamic focus adjustment with optical height detection apparatus in electron beam system 有权
标题翻译：电子束系统中光学高度检测装置的动态聚焦调整
公开(公告)号：US08791414B2
公开(公告)日：2014-07-29
申请号：US12764902
申请日：2010-04-21
申请人： Joe Wang , Van-Duc Nguyen , Yi-Xiang Wang , Jack Jau , Zhongwei Chen
发明人： Joe Wang , Van-Duc Nguyen , Yi-Xiang Wang , Jack Jau , Zhongwei Chen
IPC分类号： G01N23/00
CPC分类号： G01B11/22 , G01N23/04 , G01N23/20058 , G01N2223/32 , G01N2223/3301 , G01N2223/3302 , G01N2223/646 , H01J37/21 , H01J37/28 , H01J2237/216 , H01J2237/2482 , H01J2237/2487
摘要： The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.
摘要翻译：本发明一般涉及图像系统的动态聚焦调整。本发明借助于高度检测子系统，提供了一种用于通过改变物镜和样品台之间的静电透镜的场强/或偏置电压来根据样本表面高度变化来微调整图像聚焦的装置和方法应用于样品表面。仅作为示例，本发明已经应用于扫描电子检查系统。但是应当认识到，本发明可以应用于使用带有带电粒子束的其它系统作为具有高度检测装置的观察工具。

3. 发明授权

US08094924B2 E-beam defect review system 有权
标题翻译：电子束缺陷检查系统
公开(公告)号：US08094924B2
公开(公告)日：2012-01-10
申请号：US12335458
申请日：2008-12-15
申请人： Jack Jau , Zhongwei Chen , Yi Xiang Wang , Chung-Shih Pan , Joe Wang , Xuedong Liu , Weiming Ren , Wei Fang
发明人： Jack Jau , Zhongwei Chen , Yi Xiang Wang , Chung-Shih Pan , Joe Wang , Xuedong Liu , Weiming Ren , Wei Fang
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G01N23/04 , G01N2223/102 , G01N2223/426 , G01N2223/611 , G06T2207/10061 , G06T2207/30148
摘要： An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.
摘要翻译：一种装置包括成像单元以对待审查的晶片进行成像，其中成像单元是经修改的SORIL柱。改进的SORIL柱包括由于晶片表面拓扑而进行微聚焦的聚焦子系统，其中聚焦子系统验证从晶片表面反射的光栅图像的位置以调整焦点; 以及表面电荷控制，用于调节在复查过程期间由于电子辐射引起的电荷累积，其中气体分子在洪水枪光束下而不是在主光束下方注入。改进的SORIL列还包括用于存储晶片设计数据库的存储单元; 以及用于管理缺陷定位，缺陷采样和缺陷分类的主计算机，其中主计算机和存储单元通过高速网络链接。

4. 发明授权

US07919760B2 Operation stage for wafer edge inspection and review 失效
标题翻译：晶圆边缘检查和检查的操作阶段
公开(公告)号：US07919760B2
公开(公告)日：2011-04-05
申请号：US12331336
申请日：2008-12-09
申请人： Jack Jau , Hong Xiao , Joe Wang , Zhongwei Chen , Yi Xiang Wang , Edward Tseng
发明人： Jack Jau , Hong Xiao , Joe Wang , Zhongwei Chen , Yi Xiang Wang , Edward Tseng
IPC分类号： G21K5/10
CPC分类号： H01J37/28 , H01J37/20 , H01J2237/202 , H01J2237/2817 , H01L21/67288 , H01L21/6831
摘要： The present invention relates to an operation stage of a charged particle beam apparatus which is employed in a scanning electron microscope for substrate (wafer) edge and backside defect inspection or defect review. However, it would be recognized that the invention has a much broader range of applicability. A system and method in accordance with the present invention provides an operation stage for substrate edge inspection or review. The inspection region includes top near edge, to bevel, apex, and bottom bevel. The operation stage includes a supporting stand, a z-stage, an X-Y stage, an electrostatic chuck, a pendulum stage and a rotation track. The pendulum stage mount with the electrostatic chuck has the ability to swing from 0° to 180° while performing substrate top bevel, apex and bottom bevel inspection or review. In order to keep the substrate in focus and avoid a large position shift during altering the substrate observation angle by rotation the pendulum stage, one embodiment of the present invention discloses a method such that the rotation axis of the pendulum stage consist of the tangent of upper edge of the substrate to be inspected. The electrostatic chuck of the present invention has a diameter smaller than which of the substrate to be inspected. During the inspection process the substrate on the electrostatic chuck may be rotated about the central axis on the electrostatic chuck to a desired position, this design insures all position on the bevel and apex are able to be inspected.
摘要翻译：本发明涉及用于基板（晶片）边缘和背面缺陷检查或缺陷检查的扫描电子显微镜中的带电粒子束装置的操作阶段。然而，应当认识到，本发明具有更广泛的应用范围。根据本发明的系统和方法提供了用于衬底边缘检查或审查的操作阶段。检查区域包括顶部近边缘，斜面，顶点和底部斜面。操作台包括支撑台，z台，X-Y台，静电卡盘，摆台和旋转轨道。具有静电卡盘的摆台安装具有从0°摆动到180°的能力，同时执行基板顶部斜面，顶部和底部斜面检查或检查。为了将基板保持在对焦状态，并且通过旋转摆锤台来改变基板观察角度而避免大的位置偏移，本发明的一个实施例公开了一种方法，使得摆台的旋转轴线由上部的切线要检查的基板的边缘。本发明的静电卡盘的直径小于要检查的基板的直径。在检查过程中，静电卡盘上的基板可以围绕静电卡盘上的中心轴线旋转到期望的位置，该设计确保能够检查斜面上的所有位置和顶点。

5. 发明申请

US20100327160A1 METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM 有权
标题翻译：通过使用充电颗粒束来检验样品的方法
公开(公告)号：US20100327160A1
公开(公告)日：2010-12-30
申请号：US12491013
申请日：2009-06-24
申请人： Yan Zhao , Jack Jau , Wei Fang
发明人： Yan Zhao , Jack Jau , Wei Fang
IPC分类号： G01N23/00 , H01J3/14
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.
摘要翻译：一种用扫描带电粒子束成像装置检查样品的方法。首先，在样品的表面上指定图像区域和扫描区域。这里，图像区域在扫描区域内完全重叠。接下来，通过使用带电粒子束沿着既不平行也不垂直于扫描区域的取向的方向来扫描扫描区域。可能的是，与图像区域重叠的扫描区域的仅一部分暴露于带电粒子束。图像区域的形状和尺寸也可能与扫描区域的形状和尺寸基本相同，使得由带电粒子束投射的区域的尺寸几乎等于图像区域的尺寸。

6. 发明授权

US08937281B2 Method for examining a sample by using a charged particle beam 有权
标题翻译：通过使用带电粒子束来检查样品的方法
公开(公告)号：US08937281B2
公开(公告)日：2015-01-20
申请号：US13541618
申请日：2012-07-03
申请人： Yan Zhao , Jack Jau , Wei Fang
发明人： Yan Zhao , Jack Jau , Wei Fang
IPC分类号： H01J37/26 , H01J37/28
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/2817
摘要： A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.
摘要翻译：一种用扫描带电粒子束成像装置检查样品的方法。首先，在样品的表面上指定图像区域和扫描区域。这里，图像区域在扫描区域内完全重叠。接下来，通过使用带电粒子束沿着既不平行也不垂直于扫描区域的取向的方向来扫描扫描区域。可能的是，与图像区域重叠的扫描区域的仅一部分暴露于带电粒子束。图像区域的形状和尺寸也可能与扫描区域的形状和尺寸基本相同，使得由带电粒子束投射的区域的尺寸几乎等于图像区域的尺寸。

7. 发明授权

US08884224B2 Charged particle beam imaging assembly and imaging method thereof 有权
标题翻译：带电粒子束成像组件及其成像方法
公开(公告)号：US08884224B2
公开(公告)日：2014-11-11
申请号：US12420200
申请日：2009-04-08
申请人： Wei Fang , Jack Jau , Yan Zhao
发明人： Wei Fang , Jack Jau , Yan Zhao
IPC分类号： H01J37/28 , H01J37/30 , H01J37/02
CPC分类号： H01J37/28 , H01J37/026 , H01J2237/004 , H01J2237/0044 , H01J2237/0048
摘要： A method for enhancing the quality of a charged particle microscopic image of a sample is disclosed. The image is formed by a charged particle beam imaging system. The method comprising: scanning, using a first scanning beam, a surface of the sample in at least one first scan line; and scanning, using a second scanning beam, the sample surface in at least one second scan line, wherein said second scanning beam is scanned across said sample surface during a time interval between the end of said first scan lines and the beginning of the next said first scan lines. Application of the proposed method as a charged particle beam imaging system is also disclosed.
摘要翻译：公开了一种提高样品带电粒子显微镜图像质量的方法。该图像由带电粒子束成像系统形成。该方法包括：使用第一扫描光束在至少一个第一扫描线中扫描样品的表面; 以及使用第二扫描光束扫描至少一个第二扫描线中的样品表面，其中所述第二扫描光束在所述第一扫描线的末端与所述第一扫描线的开始之间的时间间隔期间跨越所述样品表面扫描第一条扫描线。还公开了所提出的方法作为带电粒子束成像系统的应用。

8. 发明授权

US08692214B2 Charged particle beam inspection method 有权
标题翻译：带电粒子束检查方法
公开(公告)号：US08692214B2
公开(公告)日：2014-04-08
申请号：US12540357
申请日：2009-08-12
申请人： Yan Zhao , Jack Jau
发明人： Yan Zhao , Jack Jau
IPC分类号： G21G5/00
CPC分类号： G01N23/2206 , G01N23/2251 , G01N2223/611
摘要： An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups of scan lines.
摘要翻译：公开了一种用于在该区域内形成用于缺陷检查的样品上基本相同区域的图像的成像方法和装置。所公开的方法包括通过重复地形成一组n条扫描线Y次，对该区域上的带电粒子束进行线扫描以形成多个n×Y扫描线。在每组n条扫描线的形成过程中，在扫描带电粒子束之前或同时，光束从一行扫描到另一条扫描线被选择性地照射在该区域上。此外，在每组n条扫描线的形成期间，光束的照明条件选择性地从一条扫描线变化到另一条扫描线。重复形成单个n条扫描线的条件，以形成所有Y组扫描线。

9. 发明授权

US07474001B2 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing 有权
标题翻译：基于半导体晶片制造中的测试结构的通孔/接触孔蚀刻工艺的在线监测方法
公开(公告)号：US07474001B2
公开(公告)日：2009-01-06
申请号：US11452544
申请日：2006-06-13
申请人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
发明人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76802 , H01L22/26
摘要： A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.
摘要翻译：描述了一种基于测试结构进行通孔/接触蚀刻工艺在线监测的方法。测试结构由布局不同尺寸和密度的通孔/接触孔组成，使得对于某些工艺，微加载或RIE滞后引起的不均匀蚀刻速率在一些区域产生蚀刻不良并且在其它区域中过度蚀刻。使用扫描电子显微镜来区分电压对比图像中的这些蚀刻差异。图像处理和简单校准将这些电压对比图像转换成表征蚀刻工艺的“指纹”图像，就厚度过蚀刻或欠蚀刻而言。该图像的偏移或变形的公差可以设置为验证过程的均匀性。该图像也可用作监视长期过程参数移位以及晶圆到晶圆或批次间变化的度量。先进的过程控制（APC）可以与该图像的引导一起进行，以便避免潜在的电气缺陷，加速产出斜率。

10. 发明申请

US20060234496A1 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing 有权
公开(公告)号：US20060234496A1
公开(公告)日：2006-10-19
申请号：US11452544
申请日：2006-06-13
申请人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
发明人： Yan Zhao , Chang-Chun Yeh , Zhong-Wei Chen , Jack Jau
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L22/26
摘要： A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.

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