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1. 发明授权

US5627852A Semiconductor laser geometry for broad-angle far-field addressing 失效
标题翻译：用于广角远场寻址的半导体激光几何
公开(公告)号：US5627852A
公开(公告)日：1997-05-06
申请号：US515859
申请日：1995-08-16
申请人： Yan Sun , Daniel A. Francis , Stephen A. Biellak , Constance J. Chang-Hasnain
发明人： Yan Sun , Daniel A. Francis , Stephen A. Biellak , Constance J. Chang-Hasnain
IPC分类号： H01S5/40 , H01S3/19 , H01S3/08
CPC分类号： H01S5/4031 , H01S5/4056 , H01S5/4075
摘要： A semiconductor laser apparatus for broad-angle far-field addressing is disclosed. The apparatus comprises a laser block with lasing cavities. The lasing cavity mirrors are made by dry-etching of the semiconductor block. The width of a lasing cavity is defined by a p contact pad on the laser block; further lateral confinement of current to the cavity is achieved by proton implantation followed by etching of the proton layer. The apparatus achieves quasi-continuous beam steering with a total steering angle of 80.degree. and with 11 resolvable spots.
摘要翻译：公开了一种用于广角远场寻址的半导体激光装置。该装置包括具有激光腔的激光块。激光腔镜由半导体块的干法蚀刻制成。激光腔的宽度由激光器块上的p接触焊盘限定; 通过质子注入然后蚀刻质子层来实现电流进入空腔的另外的侧向约束。该装置实现了准转弯角度为80°的准连续光束转向和11个可分辨点。

2. 发明授权

US07796805B1 Defect detection 有权
标题翻译：缺陷检测
公开(公告)号：US07796805B1
公开(公告)日：2010-09-14
申请号：US11234974
申请日：2005-09-26
申请人： Michael D. Kirk , Stephen A. Biellak , David W. Shortt
发明人： Michael D. Kirk , Stephen A. Biellak , David W. Shortt
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G01N21/94 , G01N21/956
摘要： A wafer having improved inspection sensitivity to foreign matter on a top-most surface of the wafer, as detected with a surface scanning optical inspection system that uses an inspection wavelength. The wafer includes a substantially homogenous first layer at the top-most surface of the wafer, the first layer having a first thickness. The first layer is at least partially transparent to the inspection wavelength. A substantially homogenous second layer immediately underlies the first layer, the second layer having a second thickness. The second layer is at least partially transparent to the inspection wavelength. A substrate immediately underlies the second layer. The first thickness and the second thickness are set in a combination that produces a local minimum of an electric field at the top-most surface and a local maximum of an electric field within one hundred nanometers above the top-most surface.
摘要翻译：如使用检查波长的表面扫描光学检查系统检测到的，具有对晶片最顶面上的杂质的检查灵敏度提高的晶片。晶片在晶片的最顶表面包括基本均匀的第一层，第一层具有第一厚度。第一层对于检测波长至少部分透明。基本均匀的第二层紧邻第一层，第二层具有第二厚度。第二层对于检查波长至少部分透明。底物紧靠第二层。第一厚度和第二厚度被设置为组合，其产生最顶面处的电场的局部最小值，以及最高表面之上的百纳米以内的电场的局部最大值。

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