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1. 发明授权

US06798963B2 Method for the metallization of optical fibers 失效
标题翻译：光纤金属化方法
公开(公告)号：US06798963B2
公开(公告)日：2004-09-28
申请号：US10137705
申请日：2002-05-03
申请人： Yael Nemirovsky , Elena Sidorov , Victor Sidorov
发明人： Yael Nemirovsky , Elena Sidorov , Victor Sidorov
IPC分类号： G02B602
CPC分类号： C03C25/52 , C03C25/1063 , C03C25/16 , C03C25/22 , C23C18/1605 , C23C18/165 , C23C18/31 , C23C18/32 , C23C18/42 , C23C28/021 , G02B6/02395
摘要： An improved method for providing high-quality optical fiber metallization with the required length at the required location. The method enables metallized optical fibers to be soldered and connected to mechanical components while reducing the level of stress in the metal coatings and providing strong adhesion, good conductivity and connectivity. The advantage of the method is a combination of vacuum evaporation and electroless deposition for the optical fiber metallization. A strong adhesion of the metal layer is achieved by the use of an evaporated thin metal layer, comprising an adhesion layer and a seed layer. The stress reduction is achieved due to electroless deposition, which is adequately thick for subsequent soldering/welding or other applications. The method comprises preparation for evaporation, preparation of optical fibers, evaporation of the thin metal adhesion and seed layer on the optical fiber, electroless deposition of an adequately thick metal layer, and acceptance testing. Metallization of optical fibers at any location across the fiber (patterned metallization) additionally includes application of an organic masking layer to the fiber before the metallization process, metallization of the fiber according to the present invention and subsequent dissolution of the masking layer. The inventive method applies to any fiber, in particular to SM (Single Mode) fibers and to PM (Polarization Maintaining) fibers.
摘要翻译：一种用于在所需位置提供所需长度的高品质光纤金属化的改进方法。该方法使得金属化光纤被焊接并连接到机械部件，同时降低金属涂层中的应力水平并提供强粘附性，良好的导电性和连接性。该方法的优点是用于光纤金属化的真空蒸发和无电沉积的组合。通过使用包含粘合层和种子层的蒸发的薄金属层来实现金属层的强粘合性。通过无电沉积实现应力降低，对于后续的焊接/焊接或其他应用来说，其具有足够的厚度。该方法包括蒸发准备，光纤制备，薄金属粘附和晶种层在光纤上的蒸发，无电沉积厚度均匀的金属层和验收测试。在纤维（图案化金属化）的任何位置处的光纤的金属化还包括在金属化处理之前向纤维施加有机掩蔽层，根据本发明的纤维的金属化和随后的掩蔽层的溶解。本发明的方法适用于任何纤维，特别是SM（单模）纤维和PM（Polarizing Maintain）的纤维。

2. 发明申请

US20120080794A1 METHOD FOR PRODUCING A METALLIZATION HAVING TWO MULTIPLE ALTERNATING METALLIZATION LAYERS FOR AT LEAST ONE CONTACT PAD AND SEMICONDUCTOR WAFER HAVING SAID METALLIZATION FOR AT LEAST ONE CONTACT PAD 有权
标题翻译：用于生产具有两个多个替代金属化层的金属化方法，用于至少一个接触垫和半导体层，具有用于至少一个接触垫的均匀金属化
公开(公告)号：US20120080794A1
公开(公告)日：2012-04-05
申请号：US13257346
申请日：2010-03-18
申请人： Victor Sidorov , Rimma Zhytnytska , Joachim Wuerfl
发明人： Victor Sidorov , Rimma Zhytnytska , Joachim Wuerfl
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/12 , H01L2224/03 , H01L2224/0401 , H01L2224/05007 , H01L2224/05556 , H01L2224/0558 , H01L2224/05611 , H01L2224/05616 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0566 , H01L2224/05669 , H01L2224/11472 , H01L2224/11901 , H01L2224/16 , H01L2924/00013 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), characterized in that the barrier layer (30) and the metallization (40) are applied by means of physical separation and that the metallization (40) is designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.
摘要翻译：本发明涉及一种用于至少一个接触焊盘和具有用于至少一个接触焊盘的金属化的半导体晶片的金属化的方法。本发明涉及一种金属化（以及具有相应的金属化的半导体晶片）及其制造方法，其首先可以通过物理气相分离（干式分离）来制造，其次确保了大量凸块的充分粘附。根据本发明的用于制造用于至少一个接触焊盘（20）的金属化（40）的方法包括以下工艺步骤：将至少一个接触焊盘（20）施加到衬底（10）上，施加阻挡层（30））到所述至少一个接触焊盘（20）的顶侧并且将金属化（40）施加到所述阻挡层（30）的顶侧，其特征在于，所述阻挡层（30）和所述金属化层（40）是通过物理分离施加金属化（40）被设计为具有两个多个交替金属化层（41,42）的层结构，其中第一金属化层（41）由镍或具有层小于500nm的厚度和第二金属化层（42）由不同于镍的材料制成并且是导电的。

3. 发明授权

US08866191B2 HEMT semiconductor component with field plates 有权
标题翻译： HEMT半导体元件与现场板
公开(公告)号：US08866191B2
公开(公告)日：2014-10-21
申请号：US12449700
申请日：2008-02-21
申请人： Eldat Bahat-Treidel , Victor Sidorov , Joachim Wuerfl
发明人： Eldat Bahat-Treidel , Victor Sidorov , Joachim Wuerfl
IPC分类号： H01L29/778 , H01L29/66 , H01L29/40 , H01L29/47 , H01L29/06
CPC分类号： H01L29/404 , H01L29/0619 , H01L29/2003 , H01L29/42316 , H01L29/47 , H01L29/66462 , H01L29/66871 , H01L29/7786 , H01L29/812
摘要： A transistor in which the electric field is reduced in critical areas using field plates, permitting the electric field to be more uniformly distributed along the component, is provided, wherein the electric field in the active region is smoothed and field peaks are reduced. The semiconductor component has a substrate with an active layer structure, a source contact and a drain contact located on said active layer structure. The source contact and the drain contact are mutually spaced and at least one part of a gate contact is provided on the active layer structure in the region between the source contact and the drain contact, a gate field plate being electrically connected to the gate contact. In addition, at least two separate field plates are placed directly on the active layer structure or directly on a passivation layer.
摘要翻译：提供了一种晶体管，其中使用场板的关键区域的电场减小，允许电场沿着部件更均匀地分布，其中有源区域中的电场被平滑并且场峰值减小。半导体部件具有位于所述有源层结构上的有源层结构的衬底，源极接触和漏极接触。源极触点和漏极触点相互间隔开，并且栅极触点的至少一部分在源极触点和漏极接触之间的区域中在有源层结构上提供，栅极场板电连接到栅极触点。此外，至少两个单独的场板直接放置在有源层结构上或直接放置在钝化层上。

4. 发明申请

US20210396697A1 HUMIDITY SENSOR INCORPORATING AN OPTICAL WAVEGUIDE 有权
公开(公告)号：US20210396697A1
公开(公告)日：2021-12-23
申请号：US17289541
申请日：2019-10-30
申请人： Stefan Jessenig , Victor Sidorov
发明人： Stefan Jessenig , Victor Sidorov
IPC分类号： G01N25/68 , G01N21/552
摘要： A humidity sensor system (10) includes a monolithically integrated semiconductor device (12). The monolithically integrated semiconductor device (12) includes an optical waveguide (14), a thermo-electric cooling device (16), a temperature measurement probe (18), and control circuitry (26) operable to cause the thermo-electric cooling device (16) to adjust a temperature of the monolithically integrated semiconductor device (12). The optical waveguide (14) is operable to receive an input optical signal from a light source (20) and to provide an output optical signal for sensing by a light detector (22). The humidity sensor system (10) further includes processing circuitry operable to receive output signals from the light detector (22) and from the temperature measurement probe (18) and operable to determine a relative humidity based on the output signals from the light detector (22) and the temperature measurement probe (18).

5. 发明申请

US20110221011A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110221011A1
公开(公告)日：2011-09-15
申请号：US12449700
申请日：2008-02-21
申请人： Eldat Bahat-Treidel , Victor Sidorov , Joachim Wuerfl
发明人： Eldat Bahat-Treidel , Victor Sidorov , Joachim Wuerfl
IPC分类号： H01L29/06 , H01L21/76
CPC分类号： H01L29/404 , H01L29/0619 , H01L29/2003 , H01L29/42316 , H01L29/47 , H01L29/66462 , H01L29/66871 , H01L29/7786 , H01L29/812
摘要： The invention relates to a transistor, in which the electric field is reduced in critical areas using field plates, thus permitting the electric field to be more uniformly distributed along the component. The aim of the invention is to provide a transistor and a production method therefor, wherein the electric field in the active region is smoothed (and field peaks are reduced), thus allowing the component to be made more simply and cost-effectively. The semiconductor component according to the invention has a substrate (20) which is provided with an active layer structure, a source contact (30) and a drain contact (28) being located on said active layer structure (24, 26). The source contact (30) and the drain contact (28) are mutually spaced and at least one part of a gate contact (32) is provided on the active layer structure (24, 26) in the region between the source contact (30) and the drain contact (28), a gate field plate (34) being electrically connected to the gate contact (32). In addition, at least two separate field plates (50, 52, 54, 56, 58, 60) are placed directly on the active layer structure (24, 26) or directly on a passivation layer (36).
摘要翻译：本发明涉及一种晶体管，其中使用场板的关键区域的电场减小，从而允许电场沿组件更均匀地分布。本发明的目的是提供一种晶体管及其制造方法，其中有源区域中的电场被平滑（并且场峰值减小），从而允许更简单且更经济地制造该部件。根据本发明的半导体部件具有设置有有源层结构的衬底（20），位于所述有源层结构（24,26）上的源极接触（30）和漏极接触（28）。源极触点（30）和漏极触点（28）相互间隔开，并且在源极触点（30）上的区域中的有源层结构（24,26）上设置栅极触点（32）的至少一部分，和漏极触点（28），门极板（34）电连接到栅极触点（32）。此外，至少两个分开的场板（50,52,54,56,58,60）直接放置在有源层结构（24,26）上或者直接放置在钝化层（36）上。

6. 发明授权

US08648466B2 Method for producing a metallization having two multiple alternating metallization layers for at least one contact pad and semiconductor wafer having said metallization for at least one contact pad 有权
标题翻译：用于制造具有用于至少一个接触焊盘的两个多个交替金属化层和具有用于至少一个接触焊盘的所述金属化的半导体晶片的金属化方法
公开(公告)号：US08648466B2
公开(公告)日：2014-02-11
申请号：US13257346
申请日：2010-03-18
申请人： Victor Sidorov , Rimma Zhytnytska , Joachim Wuerfl
发明人： Victor Sidorov , Rimma Zhytnytska , Joachim Wuerfl
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/12 , H01L2224/03 , H01L2224/0401 , H01L2224/05007 , H01L2224/05556 , H01L2224/0558 , H01L2224/05611 , H01L2224/05616 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0566 , H01L2224/05669 , H01L2224/11472 , H01L2224/11901 , H01L2224/16 , H01L2924/00013 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), characterized in that the barrier layer (30) and the metallization (40) are applied by means of physical separation and that the metallization (40) is designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.
摘要翻译：本发明涉及一种用于至少一个接触焊盘和具有用于至少一个接触焊盘的金属化的半导体晶片的金属化的方法。本发明涉及一种金属化（以及具有相应的金属化的半导体晶片）及其制造方法，其首先可以通过物理气相分离（干式分离）来制造，其次确保了大量凸块的充分粘附。根据本发明的用于制造用于至少一个接触焊盘（20）的金属化（40）的方法包括以下工艺步骤：将至少一个接触焊盘（20）施加到衬底（10）上，施加阻挡层（30））到所述至少一个接触焊盘（20）的顶侧并且将金属化（40）施加到所述阻挡层（30）的顶侧，其特征在于，所述阻挡层（30）和所述金属化层（40）是通过物理分离施加金属化（40）被设计为具有两个多个交替金属化层（41,42）的层结构，其中第一金属化层（41）由镍或具有层小于500nm的厚度和第二金属化层（42）由不同于镍的材料制成并且是导电的。

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