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1. 发明授权

US08030664B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08030664B2
公开(公告)日：2011-10-04
申请号：US12000360
申请日：2007-12-12
申请人： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
IPC分类号： H01L33/06
CPC分类号： H01L33/0037 , H01L33/08 , H01L33/22 , H01L2933/0083 , Y10S977/762
摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.
摘要翻译：提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

2. 发明授权

US07675071B2 Light emitting transistor 失效
标题翻译：发光晶体管
公开(公告)号：US07675071B2
公开(公告)日：2010-03-09
申请号：US11878680
申请日：2007-07-26
申请人： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/0004 , B82Y20/00 , H01L33/08 , H01L33/18 , H01L33/20
摘要： Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.
摘要翻译：提供一种发光晶体管，其包括形成在基板上的第一导电型集电极层; 形成在集电体层上的第二导电型基层; 以及形成在基底层上的第一导电型发射极层。集电极层，基极层和发射极层中的至少一个具有多个纳米棒的纳米棒结构。

3. 发明授权

US07609920B2 Optical coupler 失效
公开(公告)号：US07609920B2
公开(公告)日：2009-10-27
申请号：US12073923
申请日：2008-03-12
申请人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Dong Ik Shin
发明人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Dong Ik Shin
IPC分类号： G02B6/26
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/34 , G02B2006/12147
摘要： An optical coupler including: a substrate; a cladding layer formed on the substrate; and a slab waveguide formed on the cladding layer, wherein the slab waveguide comprises a first waveguide area on which a laser beam is incident and a second waveguide area having an incident surface capable of converging and outputting the laser beam passing through the first waveguide in a width direction. The optical coupler may optically couple one of an optical fiber and a laser diode with the slab waveguide, and more particularly, and a photonic crystal waveguide, with high efficiency.

4. 发明申请

US20090087141A1 Optical coupler 失效
标题翻译：光耦合器
公开(公告)号：US20090087141A1
公开(公告)日：2009-04-02
申请号：US12073923
申请日：2008-03-12
申请人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Dong Ik Shin
发明人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Dong Ik Shin
IPC分类号： G02B6/32 , G02B6/26
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/34 , G02B2006/12147
摘要： An optical coupler including: a substrate; a cladding layer formed on the substrate; and a slab waveguide formed on the cladding layer, wherein the slab waveguide comprises a first waveguide area on which a laser beam is incident and a second waveguide area having an incident surface capable of converging and outputting the laser beam passing through the first waveguide in a width direction. The optical coupler may optically couple one of an optical fiber and a laser diode with the slab waveguide, and more particularly, and a photonic crystal waveguide, with high efficiency.
摘要翻译： 1.一种光耦合器，包括：基板; 形成在所述基板上的覆层; 以及形成在所述包层上的平板波导，其中所述平板波导包括其上入射有激光束的第一波导区域和具有能够会聚并输出通过所述第一波导的激光束的第二波导区域宽度方向。光耦合器可以以高效率将光纤和激光二极管中的一个光学耦合到平板波导，更具体地，光子晶体波导。

5. 发明申请

US20080217639A1 Photonic crystal light emitting device using photon-recycling 有权
标题翻译：光子晶体发光器件采用光子回收
公开(公告)号：US20080217639A1
公开(公告)日：2008-09-11
申请号：US12007495
申请日：2008-01-11
申请人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Jong Ho Lee , Jae Chul Yong , Jin Ha Kim
发明人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Jong Ho Lee , Jae Chul Yong , Jin Ha Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46 , H01L33/502 , H01L33/508 , H01L2224/14 , H01L2933/0083
摘要： A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.
摘要翻译： 1.一种光子晶体发光器件，包括：发光二极管（LED）发光结构，包括第一导电半导体层，第二导电半导体层和插入在所述第一和第二导电半导体层之间的有源层; 以及形成在与所述有源层相反的所述第一导电半导体层的一个表面上的第一光子再循环发光层，其中所述第一光子再循环发光层吸收从所述LED发光结构发射的初级光，并发射光具有与初级光的波长不同的波长，并且在第一光子再循环发光层的整个厚度上形成光子晶体结构。

6. 发明申请

US20080185595A1 Light emitting device for alternating current source 审中-公开
标题翻译：交流电源用发光装置
公开(公告)号：US20080185595A1
公开(公告)日：2008-08-07
申请号：US12068392
申请日：2008-02-06
申请人： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0016 , H01L33/08 , H01L33/32
摘要： There is provided a light emitting device that can reduce the size of a light emitting device module by using a more simplified light emitting device that directly uses an alternating current source, prevent a decrease in luminous efficiency that is caused due to the use of a separate driving device, solve a problem with an ohmic contact of a p-type electrode, reduce the number of electrodes, and secure a larger area of light emission. A light emitting device for an alternating current source according to an aspect of the invention includes a first conductive type first semiconductor layer, a first electrode formed on the first conductive type first semiconductor layer and electrically connected to the alternating current source, a second conductive type second semiconductor layer formed on the first conductive type first semiconductor layer, a first conductive type third semiconductor layer formed on the second conductive type second semiconductor layer, and a second electrode formed on the third semiconductor layer and electrically connected to the alternating current source. Here, the light emitting device operates in response to a voltage from the alternating current source through the first electrode and the second electrode.
摘要翻译：提供了一种发光装置，其可以通过使用直接使用交流电源的更简化的发光装置来减小发光装置模块的尺寸，防止由于使用单独的使用而导致的发光效率的降低驱动装置，解决p型电极的欧姆接触的问题，减少电极的数量，并确保更大的发光面积。根据本发明的一个方面的用于交流电源的发光器件包括第一导电型第一半导体层，形成在第一导电型第一半导体层上并与电流源电连接的第一电极，第二导电型形成在第一导电型第一半导体层上的第二半导体层，形成在第二导电型第二半导体层上的第一导电型第三半导体层和形成在第三半导体层上并与电流源电连接的第二电极。这里，发光装置响应于来自交流电源的电压通过第一电极和第二电极而工作。

7. 发明申请

US20080142823A1 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080142823A1
公开(公告)日：2008-06-19
申请号：US11896667
申请日：2007-09-05
申请人： Won Ha Moon , Chang Hwan Choi , Young Nam Hwang , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Young Nam Hwang , Hyun Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L33/42 , Y10S977/70 , Y10S977/701 , Y10S977/72 , Y10S977/721 , Y10S977/762 , Y10S977/765 , Y10S977/932 , Y10S977/939
摘要： There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.
摘要翻译：提供了使用形成在纳米线结构上的荧光膜的半导体发光器件及其制造方法，该器件包括：衬底; 发光结构，其包括依次形成在所述基板上的第一导电类型半导体层，有源层和第二导电类型半导体层; 形成在发光结构上并由透明材料形成的多个纳米线结构; 以及形成在所述多个纳米线结构中的每一个的至少上表面和侧表面上的荧光膜。

8. 发明申请

US20080116465A1 Light emitting transistor 失效
标题翻译：发光晶体管
公开(公告)号：US20080116465A1
公开(公告)日：2008-05-22
申请号：US11878680
申请日：2007-07-26
申请人： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Hyun Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0004 , B82Y20/00 , H01L33/08 , H01L33/18 , H01L33/20
摘要： Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.
摘要翻译：提供一种发光晶体管，其包括形成在基板上的第一导电型集电极层; 形成在集电体层上的第二导电型基层; 以及形成在基底层上的第一导电型发射极层。集电极层，基极层和发射极层中的至少一个具有多个纳米棒的纳米棒结构。

9. 发明申请

US20080142782A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20080142782A1
公开(公告)日：2008-06-19
申请号：US12000360
申请日：2007-12-12
申请人： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0037 , H01L33/08 , H01L33/22 , H01L2933/0083 , Y10S977/762
摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.
摘要翻译：提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

10. 发明授权

US08471268B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US08471268B2
公开(公告)日：2013-06-25
申请号：US13224676
申请日：2011-09-02
申请人： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
发明人： Won Ha Moon , Chang Hwan Choi , Dong Woohn Kim , Hyun Jun Kim
IPC分类号： H01L33/06
CPC分类号： H01L33/0037 , H01L33/08 , H01L33/22 , H01L2933/0083 , Y10S977/762
摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.
摘要翻译：提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

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