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1. 发明申请

US20110120017A1 VARIABLE SEAL PRESSURE SLIT VALVE DOORS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：用于半导体制造设备的可变密封式压力阀门
公开(公告)号：US20110120017A1
公开(公告)日：2011-05-26
申请号：US12949231
申请日：2010-11-18
申请人： Won B. Bang , Toan Q. Tran , Yen-Kun Victor Wang
发明人： Won B. Bang , Toan Q. Tran , Yen-Kun Victor Wang
IPC分类号： E05F15/02
CPC分类号： H01L21/67126 , E05F15/50 , E05F15/56 , E05Y2201/458 , E05Y2800/12
摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. A sealing member seals the opening when a door is in a closed position. To selectively open and close the opening, an actuator moves the door. A valve actuator switch provides a first or second pressure to the actuator depending on the pressure inside a first chamber. In one embodiment, a sensor monitors the pressure inside the first chamber.
摘要翻译：描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。当门处于关闭位置时，密封构件密封开口。为了选择性地打开和关闭开口，执行器移动门。阀致动器开关根据第一室内的压力向致动器提供第一或第二压力。在一个实施例中，传感器监测第一室内的压力。

2. 发明申请

US20090197356A1 Substrate positioning on a vacuum chuck 审中-公开
标题翻译：基板定位在真空吸盘上
公开(公告)号：US20090197356A1
公开(公告)日：2009-08-06
申请号：US12383623
申请日：2009-03-27
申请人： Won B. Bang , Yen-Kun Victor Wang
发明人： Won B. Bang , Yen-Kun Victor Wang
IPC分类号： C23C16/52 , B05C11/115 , H01L21/66
CPC分类号： H01L21/67259
摘要： We have discovered a method of using the vacuum chuck/heater upon which a substrate wafer is positioned to determine whether the wafer is properly placed on the vacuum chuck. The method employs measurement of a rate of increase in pressure in a confined space beneath the substrate. Because the substrate is not hermetically sealed to the upper surface of the vacuum chuck/heater apparatus, pressure from the processing chamber above the substrate surface tends to leak around the edges of the substrate and into the space beneath the substrate which is at a lower pressure. A pressure sensing device, such as a pressure transducer is in communication with a confined volume present beneath the substrate. The rate of pressure increase in the confined volume is measured. If the substrate is well positioned on the vacuum chuck/heater apparatus, the rate of pressure increase in the confined volume beneath the substrate is slow. If the substrate is not well positioned on the vacuum chuck/heater apparatus, the rate of pressure increase is more rapid.
摘要翻译：我们已经发现了使用真空卡盘/加热器的方法，在该方法上放置基板晶片以确定晶片是否被适当地放置在真空卡盘上。该方法采用基底下方的限制空间内的压力增加率的测量。因为基板没有气密地密封到真空卡盘/加热器装置的上表面，所以来自基板表面上方的处理室的压力倾向于在基板的边缘周围泄漏到位于较低压力的基板下方的空间。诸如压力传感器的压力感测装置与存在于基底下方的限定体积连通。测量限制体积内的压力增加率。如果衬底位于真空吸盘/加热器装置上，则衬底下限制体积内的压力增加速度较慢。如果基板没有很好地定位在真空吸盘/加热器装置上，则压力增加的速度更快。

3. 发明授权

US07841582B2 Variable seal pressure slit valve doors for semiconductor manufacturing equipment 有权
标题翻译：用于半导体制造设备的可变密封压力狭缝阀门
公开(公告)号：US07841582B2
公开(公告)日：2010-11-30
申请号：US10990125
申请日：2004-11-16
申请人： Won B. Bang , Toan Q. Tran , Yen-Kun Victor Wang
发明人： Won B. Bang , Toan Q. Tran , Yen-Kun Victor Wang
IPC分类号： F16K25/00
CPC分类号： H01L21/67126
摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. A sealing member seals the opening when a door is in a closed position. To selectively open and close the opening, an actuator moves the door. A valve actuator switch provides a first or second pressure to the actuator depending on the pressure inside a first chamber. In one embodiment, a sensor monitors the pressure inside the first chamber.
摘要翻译：描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。当门处于关闭位置时，密封构件密封开口。为了选择性地打开和关闭开口，致动器移动门。阀致动器开关根据第一室内的压力向致动器提供第一或第二压力。在一个实施例中，传感器监测第一室内的压力。

4. 发明申请

US20090113684A1 Uniformly Compressed Process Chamber Gate Seal for Semiconductor Processing Chamber 审中-公开
标题翻译：用于半导体加工室的均匀压缩过程室门密封
公开(公告)号：US20090113684A1
公开(公告)日：2009-05-07
申请号：US12253716
申请日：2008-10-17
申请人： Won B. Bang , Yen-Kun Victor Wang , Lawrence Chung-Lai Lei
发明人： Won B. Bang , Yen-Kun Victor Wang , Lawrence Chung-Lai Lei
IPC分类号： H01L21/67
CPC分类号： H01L21/67126
摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.
摘要翻译：描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。开口至少有一个角角。门系统包括门，致动器和密封构件。门可以在平面上移动，并且具有至少一个成角度的角以将门与开口对齐。致动器移动门以选择性地打开和关闭开口。当门处于关闭位置时，密封构件密封开口。门的尺寸适于在处于关闭位置时对密封构件施加基本均匀的密封压缩。

5. 发明授权

US07722719B2 Gas baffle and distributor for semiconductor processing chamber 有权
标题翻译：用于半导体处理室的气体挡板和分配器
公开(公告)号：US07722719B2
公开(公告)日：2010-05-25
申请号：US11075527
申请日：2005-03-07
申请人： Lawrence Chung-Lai Lei , Siqing Lu , Steven E. Gianoulakis , Won B. Bang , David P. Sun , Yen-Kun Victor Wang
发明人： Lawrence Chung-Lai Lei , Siqing Lu , Steven E. Gianoulakis , Won B. Bang , David P. Sun , Yen-Kun Victor Wang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/3244 , H01J2237/3321
摘要： Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.
摘要翻译：本发明的技术涉及将沉积气体分布到基底上。在一个实施例中，提供了用于处理室的气体分配器。气体分配器包括具有气体偏转表面和气体分配器面的主体。气体偏转表面限定清洁气体通路。气体分配器面设置在与气体偏转表面相对的主体的相反侧上，并朝向衬底支撑构件。气体分配器面包括升高的台阶和穿过升高台阶的至少一组孔。所述至少一组孔适于将沉积气体分布在位于所述基板支撑构件上的基板上。

6. 发明授权

US06629559B2 Molds for casting with customized internal structure to collapse upon cooling and to facilitate control of heat transfer 有权
标题翻译：用于具有定制内部结构的铸造模具在冷却时塌陷并且便于控制热传递
公开(公告)号：US06629559B2
公开(公告)日：2003-10-07
申请号：US10131001
申请日：2002-04-24
申请人： Emanuel M. Sachs , Won B. Bang , Michael J. Cima
发明人： Emanuel M. Sachs , Won B. Bang , Michael J. Cima
IPC分类号： B22C902
CPC分类号： B22C9/00 , B22C9/04 , B33Y80/00
摘要： A new mold solves problems that arise from differential changes in geometry inherent to casting metal in a ceramic mold, by control of the internal morphology between the surfaces of the mold that face the casting, and that face the external environment. Layered fabrication techniques are used to create a ceramic mold. For example, an internal geometry composed of a cellular arrangement of voids may be created within the mold wall. Structures may be designed and fabricated so that the ceramic mold fails at an appropriate time during the solidification and/or cooling of the casting. Thus, the casting itself is not damaged. The mold fails to avoid rupture, or even distortion, of the casting. A thin shell of ceramic defines the casting cavity. This shell must be thin enough to fail due to the stresses induced (primarily compressive) by the metal next to it and partly adherent to it. A support structure is provided with a morphology that supports the thin shell that defines the casting geometry, yet that also fails as the casting solidifies and/or cools. Typically, the support structure is a skeletal network with voids therebetween. The skeletal elements may be struts, or sheets or both. At least the following two failure mechanisms may be exploited in the design of the support structure: bending in the structure; and under compressive loads, either by buckling of a support member or, breakage under compressive loading. The failure of the support structure may also be due to a combination of bending and compression.
摘要翻译：一种新的模具解决了陶瓷模具中铸造金属固有几何差异变化的问题，通过控制模具表面之间的内部形态以及面对外部环境的内部形态。使用分层制造技术来制造陶瓷模具。例如，可以在模具壁内形成由空隙的细胞布置构成的内部几何形状。可以设计和制造结构，使得陶瓷模具在铸件的凝固和/或冷却期间在适当的时间失效。因此，铸件本身不会损坏。模具不能避免铸件的破裂或甚至变形。陶瓷的薄壳体限定铸造腔体。这种外壳必须足够薄以致由于紧邻其上的金属（部分粘附在其上）的应力引起（主要是压缩）的应力而失效。支撑结构具有支撑限定铸造几何形状的薄壳的形态，但是当铸件固化和/或冷却时也会失效。通常，支撑结构是其间具有空隙的骨架网络。骨架元件可以是支柱或片材或两者。至少在支撑结构的设计中可以利用以下两种故障机构：在结构中弯曲; 并且在压缩载荷下，通过支撑构件的弯曲或在压缩载荷下断裂。支撑结构的故障也可能是由于弯曲和压缩的组合。

7. 发明申请

US20100006032A1 CHAMBER COMPONENTS FOR CVD APPLICATIONS 审中-公开
标题翻译：用于CVD应用的CHAMBER组件
公开(公告)号：US20100006032A1
公开(公告)日：2010-01-14
申请号：US12501195
申请日：2009-07-10
申请人： Kimberly Hinckley , Yizhen Zhang , Manuel A. Hernandez , Won B. Bang , Dmitry Lubomirsky
发明人： Kimberly Hinckley , Yizhen Zhang , Manuel A. Hernandez , Won B. Bang , Dmitry Lubomirsky
IPC分类号： C23C16/00
CPC分类号： C23C16/452 , C23C16/4481 , C23C16/45512 , C23C16/45591
摘要： Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.
摘要翻译：提供了一种用于处理室的设备。在一个方面，提供了阻挡板，其包括具有第一厚度的内部部分的环形板，并且环形板具有包括中心部分的孔图案，第一图案化部分同心地设置在中心部分周围，并且包括第一多个孔具有第一数量的孔，第二图案部分同心地设置在第一图案化部分周围，并且包括第二多个孔，其具有大于第一数量孔的第二数量的孔，围绕第二图案化部分同心设置的周边部分，以及包括设置在所述环形板的周边上的升高的同心部分的外部部分。另一方面，提供第二，第三和第四阻滞板。此外，提供了一种用于处理室的混合装置和液体蒸发装置。

8. 发明授权

US07456116B2 Gap-fill depositions in the formation of silicon containing dielectric materials 失效
标题翻译：在形成含硅介电材料时的间隙填充沉积
公开(公告)号：US07456116B2
公开(公告)日：2008-11-25
申请号：US11018381
申请日：2004-12-20
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45512 , C23C16/401 , C23C16/45523 , C23C16/52
摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.
摘要翻译：一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS，和TOMCATS。该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

9. 发明授权

US07205205B2 Ramp temperature techniques for improved mean wafer before clean 有权
标题翻译：用于在清洁之前改善平均晶片的斜坡温度技术
公开(公告)号：US07205205B2
公开(公告)日：2007-04-17
申请号：US10712464
申请日：2003-11-12
申请人： Won B. Bang , Yen-Kun Wang , Kevin Mikio Mukai , Theresa Marie O. Liu
发明人： Won B. Bang , Yen-Kun Wang , Kevin Mikio Mukai , Theresa Marie O. Liu
IPC分类号： H01L21/76
CPC分类号： H01L21/02129 , C23C16/4405 , C23C16/46 , H01J37/32862 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76224
摘要： A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510° C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.
摘要翻译：一种操作衬底处理室的方法，包括将第一衬底转移到衬底处理室中并将衬底加热至至少510℃的第一温度; 在第一衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到低于第一温度的第二温度; 将所述第一衬底转移出所述衬底处理室; 在沉积步骤期间，通过将反应性卤素物质引入室中，同时增加室的温度来除去在室的内表面上形成的不需要的沉积材料; 将第二衬底转移到衬底处理室中并将衬底加热到第一温度; 以及在第二衬底上沉积绝缘层，同时将衬底的温度从第一温度降低到第二温度。

10. 发明申请

US20080115726A1 GAP-FILL DEPOSITIONS INTRODUCING HYDROXYL-CONTAINING PRECURSORS IN THE FORMATION OF SILICON CONTAINING DIELECTRIC MATERIALS 审中-公开
标题翻译： GAP-FILL沉积物介绍含羟基的前驱体在形成含硅介质材料
公开(公告)号：US20080115726A1
公开(公告)日：2008-05-22
申请号：US11941793
申请日：2007-11-16
申请人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
发明人： Nitin K. Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won B. Bang , Yen-Kun V. Wang
IPC分类号： B05C11/00
CPC分类号： H01L21/76837 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/76224
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

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