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1. 发明授权

US09081446B2 Touch display panels and manufacture methods thereof 有权
标题翻译：触摸显示面板及其制造方法
公开(公告)号：US09081446B2
公开(公告)日：2015-07-14
申请号：US12878951
申请日：2010-09-09
申请人： Chia-Mei Liu , Tsai-Lai Cheng , Wei-Lun Liao , Guan-Hua Yeh , Hong-Gi Wu
发明人： Chia-Mei Liu , Tsai-Lai Cheng , Wei-Lun Liao , Guan-Hua Yeh , Hong-Gi Wu
IPC分类号： G06F3/041 , G06F3/044 , H01L27/12 , H01L27/13
CPC分类号： G06F3/044 , G06F3/0412 , H01L27/12 , H01L27/1214 , H01L27/1255 , H01L27/13
摘要： A touch display panel is provided and includes a substrate, a plurality of gate lines, a plurality of data lines, a plurality of data output lines, a plurality of thin film transistors, and a plurality of detection capacitors. The gate lines are disposed on the substrate. The data lines are disposed on the substrate. The data lines and the gate lines define a plurality of pixel regions on the substrate. The data output lines are disposed on the substrate, and each data output line is disposed next to one data line. The thin film transistors are respectively disposed in the pixel regions. Each thin film transistor is electrically connected to the corresponding gate line and the corresponding data line. The detection capacitors are respectively disposed in the pixel regions. Each detection capacitor is electrically connected to the corresponding gate line and the corresponding data line.
摘要翻译：提供一种触摸显示面板，包括基板，多条栅极线，多条数据线，多条数据输出线，多条薄膜晶体管和多条检测电容器。栅极线设置在基板上。数据线设置在基板上。数据线和栅极线在衬底上限定多个像素区域。数据输出线设置在基板上，并且每个数据输出线设置在一个数据线旁边。薄膜晶体管分别设置在像素区域中。每个薄膜晶体管电连接到相应的栅极线和相应的数据线。检测电容器分别设置在像素区域中。每个检测电容器电连接到相应的栅极线和相应的数据线。

2. 发明申请

US20090316092A1 TFT subtrate, LCD device using same and method for manufacturing TFT substrate 有权
标题翻译： TFT缓冲液，使用其的LCD装置以及制造TFT基板的方法
公开(公告)号：US20090316092A1
公开(公告)日：2009-12-24
申请号：US12456719
申请日：2009-06-22
申请人： Wei-Lun Liao , Guan-Hua Yeh , Chia-Mei Liu , Hong-Gi Wu
发明人： Wei-Lun Liao , Guan-Hua Yeh , Chia-Mei Liu , Hong-Gi Wu
IPC分类号： G02F1/133 , H01L31/02 , H01L31/18
CPC分类号： H01L27/1255 , G02F1/1362 , G02F2201/58 , H01L27/1214
摘要： A thin film transistor (TFT) substrate includes a transparent substrate, a plurality of TFTs and a photosensitive capacitor formed on the transparent substrate. A capacitance of the photosensitive capacitor is variable on the condition of environment brightness. A method for manufacturing the TFT substrate and an LCD using the TFT substrate are also provided.
摘要翻译：薄膜晶体管（TFT）基板包括透明基板，多个TFT和形成在透明基板上的感光电容器。感光电容器的电容在环境亮度的条件下是可变的。还提供了用于制造TFT基板的方法和使用TFT基板的LCD。

3. 发明授权

US08222062B2 Method for fabricating a flexible display device 有权
标题翻译：柔性显示装置的制造方法
公开(公告)号：US08222062B2
公开(公告)日：2012-07-17
申请号：US12860913
申请日：2010-08-22
申请人： Wei-Lun Liao , Guan-Hua Yeh , Hsiao-Ping Lai , Hong-Gi Wu
发明人： Wei-Lun Liao , Guan-Hua Yeh , Hsiao-Ping Lai , Hong-Gi Wu
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218
摘要： A method for fabricating a flexible display device includes providing a carrier substrate, forming a sacrificial layer on the carrier substrate, forming a metal layer and a buffer layer on the sacrificial layer in that order, forming at least one active device on the buffer layer, and separating the metal layer and the carrier substrate by laser treatment.
摘要翻译：一种用于制造柔性显示装置的方法包括提供载体衬底，在载体衬底上形成牺牲层，在牺牲层上依次形成金属层和缓冲层，在缓冲层上形成至少一个有源器件，并通过激光处理分离金属层和载体基板。

4. 发明授权

US08300169B2 TFT substrate, LCD device using same and method for manufacturing TFT substrate 有权
标题翻译： TFT基板，使用其的LCD装置以及TFT基板的制造方法
公开(公告)号：US08300169B2
公开(公告)日：2012-10-30
申请号：US12456719
申请日：2009-06-22
申请人： Guan-Hua Yeh , Chai-Mei Liu , Hong-Gi Wu , Wei-Lun Liao
发明人： Guan-Hua Yeh , Chai-Mei Liu , Hong-Gi Wu , Wei-Lun Liao
IPC分类号： G02F1/136
CPC分类号： H01L27/1255 , G02F1/1362 , G02F2201/58 , H01L27/1214
摘要： A thin film transistor (TFT) substrate includes a transparent substrate, a plurality of TFTs and a photosensitive capacitor formed on the transparent substrate. A capacitance of the photosensitive capacitor is variable on the condition of environment brightness. A method for manufacturing the TFT substrate and an LCD using the TFT substrate are also provided.
摘要翻译：薄膜晶体管（TFT）基板包括透明基板，多个TFT和形成在透明基板上的感光电容器。感光电容器的电容在环境亮度的条件下是可变的。还提供了用于制造TFT基板的方法和使用TFT基板的LCD。

5. 发明申请

US20100047975A1 Method for fabricating low temperature poly-silicon thin film transistor substrate background 有权
标题翻译：制造低温多晶硅薄膜晶体管基板背景的方法
公开(公告)号：US20100047975A1
公开(公告)日：2010-02-25
申请号：US12583461
申请日：2009-08-21
申请人： Guan-Hua Yeh , Tsai-Lai Cheng , Hong-Gi Wu
发明人： Guan-Hua Yeh , Tsai-Lai Cheng , Hong-Gi Wu
IPC分类号： H01L21/336
CPC分类号： H01L27/127 , H01L27/1255 , H01L27/1288
摘要： An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S2, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S3, gate electrodes of the first and the second type TFT are formed. In step S4, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.
摘要翻译：用于制造LTPS-TFT基板的示例性方法如下。在步骤S1中，形成包括第一类TFT的源极电极接触区域和漏极电极接触区域，第二类型TFT的源极电极接触区域和漏极接触区域的p-Si图案。在步骤S2中，第一类型TFT的源电极接触区域和漏电极接触区域被重掺杂第一掺杂剂。在步骤S3中，形成第一和第二类型TFT的栅电极。在步骤S4中，第一和第二类型TFT的源电极接触区域和漏电极接触区域被重掺杂第二掺杂剂。第一掺杂剂和第二掺杂剂是补偿性的，并且第一掺杂剂与第二掺杂剂的数量比为约2:1。

6. 发明授权

US07985636B2 Method for fabricating low temperature poly-silicon thin film transistor substrate 有权
标题翻译：制造低温多晶硅薄膜晶体管基板的方法
公开(公告)号：US07985636B2
公开(公告)日：2011-07-26
申请号：US12583461
申请日：2009-08-21
申请人： Guan-Hua Yeh , Tsai-Lai Cheng , Hong-Gi Wu
发明人： Guan-Hua Yeh , Tsai-Lai Cheng , Hong-Gi Wu
IPC分类号： H01L21/336
CPC分类号： H01L27/127 , H01L27/1255 , H01L27/1288
摘要： An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S2, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S3, gate electrodes of the first and the second type TFT are formed. In step S4, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.
摘要翻译：用于制造LTPS-TFT基板的示例性方法如下。在步骤S1中，形成包括第一类TFT的源极电极接触区域和漏极电极接触区域，第二类型TFT的源极电极接触区域和漏极接触区域的p-Si图案。在步骤S2中，第一类型TFT的源电极接触区域和漏电极接触区域被重掺杂第一掺杂剂。在步骤S3中，形成第一和第二类型TFT的栅电极。在步骤S4中，第一和第二类型TFT的源电极接触区域和漏电极接触区域被重掺杂第二掺杂剂。第一掺杂剂和第二掺杂剂是补偿性的，并且第一掺杂剂与第二掺杂剂的数量比为约2:1。

7. 发明申请

US20080251791A1 Thin film transistor substrate and method for fabricating same 审中-公开
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20080251791A1
公开(公告)日：2008-10-16
申请号：US12082653
申请日：2008-04-14
申请人： Guan-Hua Yeh , Hong-Gi Wu , Jung-Lung Huang
发明人： Guan-Hua Yeh , Hong-Gi Wu , Jung-Lung Huang
IPC分类号： H01L33/00
CPC分类号： H01L27/1255
摘要： An exemplary thin film transistor substrate (200) includes a base (201), a semiconductor pattern (202) formed on the base, a first gate insulating layer (203) formed on the semiconductor pattern, and a gate electrode (223) and a common capacitor electrode (245) formed on the first gate insulating layer. The semiconductor pattern includes a heavily doped polysilicon pattern (212) and a lightly doped polysilicon pattern (213). The gate electrode and the common capacitor electrode correspond to the lightly doped polysilicon pattern. An exemplary method for fabricating the thin film transistor substrate is also provided.
摘要翻译：示例性薄膜晶体管基板（200）包括基底（201），形成在基底上的半导体图案（202），形成在半导体图案上的第一栅极绝缘层（203）和栅电极（223）和公共电容电极（245）形成在第一栅极绝缘层上。半导体图案包括重掺杂多晶硅图案（212）和轻掺杂多晶硅图案（213）。栅电极和公共电容电极对应于轻掺杂多晶硅图案。还提供了制造薄膜晶体管基板的示例性方法。

8. 发明申请

US20080182392A1 Method for fabricating polysilicon layer with large and uniform grains 审中-公开
标题翻译：制造具有大而均匀晶粒的多晶硅层的方法
公开(公告)号：US20080182392A1
公开(公告)日：2008-07-31
申请号：US12011804
申请日：2008-01-29
申请人： Guan-Hua Yeh , Hong-Gi Wu , Jung-Lung Huang
发明人： Guan-Hua Yeh , Hong-Gi Wu , Jung-Lung Huang
IPC分类号： H01L21/36
CPC分类号： H01L21/02532 , H01L21/02658 , H01L21/02675
摘要： An exemplary method for fabricating a polysilicon layer (208) includes the following steps. A substrate (200) is provided, and a first amorphous silicon layer (203) is formed over the substrate. Portions of the first amorphous silicon layer are removed through a photolithograph process to form a plurality of crystallization seeds (205). A second amorphous silicon layer (206) is formed over the substrate and the crystallization seeds. A laser annealing process is conducted to crystallize the amorphous silicon layer into a polysilicon layer.
摘要翻译：制造多晶硅层（208）的示例性方法包括以下步骤。提供衬底（200），并且在衬底上形成第一非晶硅层（203）。通过光刻工艺去除第一非晶硅层的部分以形成多个结晶晶种（205）。第二非晶硅层（206）形成在衬底和结晶晶种上。进行激光退火处理以将非晶硅层结晶成多晶硅层。

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