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    • 8. 发明授权
    • Dual-gate normally-off nitride transistors
    • 双栅极常关氮化物晶体管
    • US08587031B2
    • 2013-11-19
    • US13557414
    • 2012-07-25
    • Bin LuTomas Palacios
    • Bin LuTomas Palacios
    • H01L29/66
    • H01L29/7787H01L29/2003H01L29/42316H01L29/4236
    • A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the dual-gate normally-off nitride transistor. A second gate structure is formed between the first gate structure and the drain electrode for modulating a normally-on channel region underneath the second gate structure. The magnitude of the threshold voltage of the second gate structure is smaller than the drain breakdown of the first gate structure for proper operation of the dual-gate normally-off nitride transistor.
    • 一种双栅极常关氮化物晶体管,其包括形成在源电极和漏电极之间的第一栅极结构,用于控制双栅极正常氮化物晶体管的常关沟道区。 在第一栅极结构和漏极之间形成第二栅极结构,用于调制在第二栅极结构下方的常导通道区域。 第二栅极结构的阈值电压的幅度小于用于双栅极常关氮化物晶体管的正常工作的第一栅极结构的漏极击穿。
    • 10. 发明授权
    • Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording
    • 用于热辅助磁记录的层压交换耦合粘合(LECA)介质
    • US08241766B2
    • 2012-08-14
    • US11835476
    • 2007-08-08
    • Bin LuGanping Ju
    • Bin LuGanping Ju
    • G11B5/66
    • G11B5/314G11B5/1278G11B2005/001G11B2005/0021
    • An apparatus includes a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature. The recording temperature is reduced due to the smaller switching volume achieved by using vertically decoupled laminations at elevated temperatures.
    • 一种装置包括彼此相邻定位的多个双层结构,每个双层结构包括具有第一居里温度的第一层磁性材料和邻近第一层定位的第二层磁性材料,其中第二层具有 第二居里温度低于第一居里温度时,当第二层磁性材料被加热到高于第二居里温度时,第一层的磁性颗粒是不稳定的。 由于在升高的温度下使用垂直去耦的叠片来实现较小的开关体积,所以记录温度降低。