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    • 6. 发明申请
    • Filtered cathodic arc deposition method and apparatus
    • 过滤阴极电弧沉积方法和装置
    • US20080116058A1
    • 2008-05-22
    • US11890736
    • 2007-08-06
    • Vladimir Gorokhovsky
    • Vladimir Gorokhovsky
    • C23C14/00
    • C23C14/0605C23C14/022C23C14/0641C23C14/0647C23C14/16C23C14/325C23C14/355C23C14/48C23C16/36H01J37/32055H01J37/3266
    • An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow. In a further embodiment a second arc source is activated to coat the substrates while a first arc source is activated, and the magnetic deflecting system for the first arc source is deactivated to confine plasma to the cathode chamber but permit electrons to flow into the coating chamber for plasma immersed treatment of the substrates. A load lock shutter may be provided between the plasma duct and the coating chamber further confine the plasma from the first arc source.
    • 一种用于在真空中施加涂层的装置,包括由与第一等离子体源连通的磁偏转系统所围绕的等离子体管道和其中衬底保持器布置在等离子体源的光轴之外的涂覆室,至少具有 一个偏转电极安装在等离子体管道的一个或多个壁上。 在一个实施例中,隔离的排斥或排斥电极位于偏转电极下游的等离子体管道中,其中偏转磁场的切向分量最强,连接到电流源的正极,其允许隔离电极电流变化 独立地增加到高于阳极电流的水平。 偏转电极可以用作吸气泵,以提高泵送效率并从金属离子流中转移金属离子。 在另一实施例中,激活第二电弧源以在第一电弧源被激活时涂覆基板,并且用于第一电弧源的磁偏转系统被去激活以将等离子体限制到阴极室,但允许电子流入涂覆室 用于等离子体浸渍处理的基板。 可以在等离子体管道和涂覆室之间设置负载锁定闸门,进一步限制来自第一电弧源的等离子体。
    • 7. 发明授权
    • Protective coating for abrasive dental tools and burs
    • 磨蚀性牙科工具和毛刺的保护涂层
    • US06722883B2
    • 2004-04-20
    • US10007773
    • 2001-11-08
    • Vladimir Gorokhovsky
    • Vladimir Gorokhovsky
    • A61C306
    • A61B17/1615A61B50/00A61C3/02A61C3/06
    • A protective coating applied to abrasive layers of polycrystalline diamond located at the tip of abrasive dental tools is described. The protective coating is provided to protect the polycrystalline diamond layers in the course of storage, packaging, handling and sterilization. The protective coating is removable by abrasive forces when the cutting surfaces come into contact with porcelain and hard ceramic dental materials, teeth, bone or similar hard materials, and subsequently, the broken protective coating is rolled back and collected in the crevices and gaps of the polycrystalline diamond layer. The protective encapsulating coating can be made of a tough high melting point polymer layer, or a layer of a tough polymer also containing fine ceramic particles, or of a relatively soft, oxidation resistant metal or alloy.
    • 描述了一种保护涂层,其应用于位于研磨性牙科工具尖端的多晶金刚石研磨层。 提供保护涂层以在储存,包装,处理和灭菌过程中保护多晶金刚石层。 当切割表面与瓷和硬陶瓷牙科材料,牙齿,骨头或类似的硬质材料接触时,保护涂层可以通过磨蚀力去除,随后,破损的保护涂层被卷回并收集在缝隙和间隙中 多晶金刚石层。 保护性封装涂层可以由坚韧的高熔点聚合物层或还含有细陶瓷颗粒的韧性聚合物层或相对柔软的抗氧化金属或合金制成。
    • 9. 发明授权
    • Filtered cathodic arc deposition method and apparatus
    • 过滤阴极电弧沉积方法和装置
    • US08658010B2
    • 2014-02-25
    • US12695818
    • 2010-01-28
    • Vladimir Gorokhovsky
    • Vladimir Gorokhovsky
    • C23C14/34
    • C23C14/0605C23C14/022C23C14/0641C23C14/0647C23C14/16C23C14/325C23C14/355C23C14/48C23C16/36H01J37/32055H01J37/3266
    • An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow. In a further embodiment a second arc source is activated to coat the substrates while a first arc source is activated, and the magnetic deflecting system for the first arc source is deactivated to confine plasma to the cathode chamber but permit electrons to flow into the coating chamber for plasma immersed treatment of the substrates. A load lock shutter may be provided between the plasma duct and the coating chamber further confine the plasma from the first arc source.
    • 一种用于在真空中施加涂层的装置,包括由与第一等离子体源连通的磁偏转系统所围绕的等离子体管道和其中衬底保持器布置在等离子体源的光轴之外的涂覆室,至少具有 一个偏转电极安装在等离子体管道的一个或多个壁上。 在一个实施例中,隔离的排斥或排斥电极位于偏转电极下游的等离子体管道中,其中偏转磁场的切向分量最强,连接到电流源的正极,其允许隔离电极电流变化 独立地增加到高于阳极电流的水平。 偏转电极可以用作吸气泵,以提高泵送效率并从金属离子流中转移金属离子。 在另一实施例中,激活第二电弧源以在第一电弧源被激活时涂覆基板,并且用于第一电弧源的磁偏转系统被去激活以将等离子体限制到阴极室,但允许电子流入涂覆室 用于等离子体浸渍处理的基板。 可以在等离子体管道和涂覆室之间设置负载锁定闸门,进一步限制来自第一电弧源的等离子体。