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    • 10. 发明申请
    • Dielectric Materials Using 2D Nanosheet Network Interlayer
    • 使用2D纳米片网络介质的电介质材料
    • US20160372263A1
    • 2016-12-22
    • US15186755
    • 2016-06-20
    • University of Connecticut
    • Douglas H. AdamsonZhenhua CuiAndrey V. Dobrynin
    • H01G4/14C23C16/44C23C16/34
    • H01G4/14C30B29/403C30B29/64
    • The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.
    • 本公开提供了有益的复合膜/涂层,以及用于制造这种复合膜/涂层的改进方法。 更具体地,本公开提供了通过在相分离系统的界面处捕获层状材料(例如,六方氮化硼片/层)的至少一部分然后将分层材料引入聚合物来制造复合膜的改进方法 电影。 本公开提供了使用氮化硼层来增加聚合物膜的性质(例如介电常数和击穿电压)。 可以通过有利的攀爬技术制造示例性的膜。 示例性氮化硼膜由总厚度约为1纳米的重叠氮化硼片组成,然后将膜转移到聚合物膜上,从而导致聚合物膜的电介质和击穿性能的显着增加。