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1. 发明授权

US08987610B2 Vent structure for electromagnetic shielding 有权
标题翻译：通风结构用于电磁屏蔽
公开(公告)号：US08987610B2
公开(公告)日：2015-03-24
申请号：US13466422
申请日：2012-05-08
申请人： Ui-Jung Kim , Kwang-Uk Chu , Jong-Kyu Kim , Dae-Heon Lee
发明人： Ui-Jung Kim , Kwang-Uk Chu , Jong-Kyu Kim , Dae-Heon Lee
IPC分类号： H05K9/00
CPC分类号： H05K9/0041
摘要： A vent structure for electromagnetic shielding includes: a conductive shielding case having a vent formed therein: a conductive shielding duct installed on the shielding case so as to cover the vent, including a space formed perpendicular to the direction of motion of air discharged from the vent to vent the air and a discharge port connected from the space to the outside to discharge the air introduced into the space to the outside, and shielding electromagnetic waves; and an EMI (Electro Magnetic Interference) gasket installed at a bonding surface between the shielding case and the shielding duct, and electrically connecting the shielding case and the shielding duct.
摘要翻译：用于电磁屏蔽的通风结构包括：导电屏蔽壳，其中形成有通风口;导电屏蔽导管，安装在屏蔽壳上，以便覆盖通风口，包括垂直于从通风口排出的空气的运动方向形成的空间排出空气和从该空间连接到外部的排出口，将引入空间的空气排出到外部，并屏蔽电磁波; 以及安装在屏蔽壳体和屏蔽导管之间的接合表面处的EMI（电磁干扰）垫片，并且电连接屏蔽壳体和屏蔽导管。

2. 发明授权

US10431459B2 Methods of fabricating semiconductor device 有权
公开(公告)号：US10431459B2
公开(公告)日：2019-10-01
申请号：US15668689
申请日：2017-08-03
申请人： Woohyun Lee , Sang-Kuk Kim , Jong-Kyu Kim , Yil-hyung Lee , Jongsoon Park , Hyeji Yoon
发明人： Woohyun Lee , Sang-Kuk Kim , Jong-Kyu Kim , Yil-hyung Lee , Jongsoon Park , Hyeji Yoon
IPC分类号： H01L21/033 , H01L21/311 , H01L21/687
摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

3. 发明授权

US10403473B2 Ion beam etching devices 有权
公开(公告)号：US10403473B2
公开(公告)日：2019-09-03
申请号：US15198416
申请日：2016-06-30
申请人： Han-Na Cho , Jong-Kyu Kim , Hyuk Kim , Jongchul Park
发明人： Han-Na Cho , Jong-Kyu Kim , Hyuk Kim , Jongchul Park
IPC分类号： H01J37/32
摘要： An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.

4. 发明授权

US10002905B2 Data storage devices 有权
公开(公告)号：US10002905B2
公开(公告)日：2018-06-19
申请号：US15431234
申请日：2017-02-13
申请人： Jongsoon Park , Sang-Kuk Kim , Jong-Kyu Kim , Jongchul Park , Woohyun Lee , Yil-hyung Lee
发明人： Jongsoon Park , Sang-Kuk Kim , Jong-Kyu Kim , Jongchul Park , Woohyun Lee , Yil-hyung Lee
IPC分类号： H01L43/00 , H01L27/22 , H01L43/02 , H01L43/08 , G11C11/16 , H01L43/10
CPC分类号： H01L27/222 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Data storage devices are provided. A data storage device includes a dielectric layer on a substrate. The data storage device includes a plurality of data storage structures on the dielectric layer. The data storage device includes a conductive material on the dielectric layer. Moreover, the data storage device includes an insulation layer on the conductive material.

5. 外观设计

USD693873S1 Printer 有权
公开(公告)号：USD693873S1
公开(公告)日：2013-11-19
申请号：US29426323
申请日：2012-07-03
申请人： Naoto Fukasawa , Jong-Kyu Kim , Seung-Wook Jeong
设计人： Naoto Fukasawa , Jong-Kyu Kim , Seung-Wook Jeong

6. 外观设计

USD692477S1 Printer 有权
公开(公告)号：USD692477S1
公开(公告)日：2013-10-29
申请号：US29418382
申请日：2012-04-16
申请人： Jong-Kyu Kim , Seung-Wook Jeong , Min-Chul Kim
设计人： Jong-Kyu Kim , Seung-Wook Jeong , Min-Chul Kim

7. 发明申请

US20120182635A1 LIGHT-COLLECTING HELIOSTAT USING FLAT MIRRORS 有权
标题翻译：使用平面镜的光收集HELIOSTAT
公开(公告)号：US20120182635A1
公开(公告)日：2012-07-19
申请号：US13498456
申请日：2011-04-11
申请人： Sang-Nam Lee , Jong-Kyu Kim , Yong-Heack Kang
发明人： Sang-Nam Lee , Jong-Kyu Kim , Yong-Heack Kang
IPC分类号： G02B5/10
CPC分类号： F24S23/77 , F24S30/452 , Y02E10/47
摘要： Disclosed is a light-collecting heliostat using flat mirrors of enhanced light-collecting efficiency. The gradients of low-price flat mirrors are adjusted when reflecting sunlight by the heliostat equipped with the flat mirrors, thereby causing reflection focal points having the same size as each of the mirrors to overlap, in the same number as the number of the reflective plates constituting the heliostat, on a heat collecting unit of collecting lights, so that a high temperature light-collecting focal point with a uniform temperature distribution is obtained.
摘要翻译：公开了使用具有增强的聚光效率的平反射镜的集光定日镜。通过装有平面镜的定日镜反射阳光来调整低价平面镜的梯度，从而使具有与每个反射镜相同尺寸的反射焦点重叠，数量与反射板数目相同在收集灯的集热单元上形成定日镜，从而获得具有均匀温度分布的高温聚光焦点。

8. 外观设计

USD624956S1 Copy machine 有权
公开(公告)号：USD624956S1
公开(公告)日：2010-10-05
申请号：US29316754
申请日：2009-10-29
申请人： Ji-Sang Park , Hoon-Tae Kim , Jong-Kyu Kim
设计人： Ji-Sang Park , Hoon-Tae Kim , Jong-Kyu Kim

9. 发明申请

US20090117723A1 Methods of forming a conductive pattern in semiconductor devices and methods of manufacturing semiconductor devices having a conductive pattern 审中-公开
标题翻译：在半导体器件中形成导电图案的方法和制造具有导电图案的半导体器件的方法
公开(公告)号：US20090117723A1
公开(公告)日：2009-05-07
申请号：US12287945
申请日：2008-10-15
申请人： Jong-Kyu Kim , Bum-Soo Kim , Jong-Heui Song , Sang-Sup Jeong , Sung-Gil Choi , Kuk-Han Yoon
发明人： Jong-Kyu Kim , Bum-Soo Kim , Jong-Heui Song , Sang-Sup Jeong , Sung-Gil Choi , Kuk-Han Yoon
IPC分类号： H01L21/28 , H01L21/283
CPC分类号： H01L29/42324 , H01L21/02071 , H01L21/31122 , H01L21/31138 , H01L21/32139 , H01L27/11521 , H01L29/40114
摘要： In a method of forming a conductive pattern in a semiconductor device, a conductive layer including a metal is formed on a substrate. A mask including carbon is provided on the conductive layer, and the conductive pattern is formed on the substrate by etching the conductive layer using the mask as an etching mask. The mask is removed from the conductive pattern by an oxygen plasma ashing process. An oxidized portion of the conductive pattern is reduced. The conductive pattern may have a desired resistance by reducing the oxidized portion to improve electrical characteristics and reliability of the semiconductor device.
摘要翻译：在半导体器件中形成导电图案的方法中，在衬底上形成包括金属的导电层。在导电层上设置包含碳的掩模，并且通过使用掩模作为蚀刻掩模蚀刻导电层，在基板上形成导电图案。通过氧等离子体灰化处理将掩模从导电图案中去除。导电图案的氧化部分减少。导电图案可以通过减少氧化部分而具有期望的电阻，以改善半导体器件的电特性和可靠性。

10. 发明申请

US20060040443A1 Methods of forming capacitor electrodes using fluorine and oxygen 失效
标题翻译：使用氟和氧形成电容器电极的方法
公开(公告)号：US20060040443A1
公开(公告)日：2006-02-23
申请号：US11154152
申请日：2005-06-16
申请人： Sung-Il Cho , Jong-Kyu Kim , Byeong-Yun Nam , Kyeong-Koo Chi , Cheol-Kyu Lee
发明人： Sung-Il Cho , Jong-Kyu Kim , Byeong-Yun Nam , Kyeong-Koo Chi , Cheol-Kyu Lee
IPC分类号： H01L21/8244
CPC分类号： H01L28/60 , H01L21/32136 , H01L21/32139 , H01L27/10852 , H01L27/11502 , H01L27/11507
摘要： A method of forming a capacitor can include etching a metal-nitride layer in an environment comprising fluorine and oxygen to form a capacitor electrode.
摘要翻译：形成电容器的方法可以包括在包括氟和氧的环境中蚀刻金属氮化物层以形成电容器电极。

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