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1. 发明授权

US07653098B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07653098B2
公开(公告)日：2010-01-26
申请号：US12165674
申请日：2008-07-01
申请人： Tsutomu Yamaguchi , Yoshihisa Tashiro , Kenzo Mori , Hiroo Sakamoto , Takehiro Nishida
发明人： Tsutomu Yamaguchi , Yoshihisa Tashiro , Kenzo Mori , Hiroo Sakamoto , Takehiro Nishida
IPC分类号： H01S3/00 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/02212 , H01S5/0224 , H01S5/02244 , H01S5/02272 , H01S5/02476 , H01S5/4087
摘要： A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.
摘要翻译：半导体激光芯片以结合下降的方式接合到AlN子安装座。子安装架连接到一个包装。 AlN子座连接到杆。与从半导体激光芯片发射的激光束的照射方向垂直的方向是副安装座的宽度方向。确定AlN子安装座的厚度和宽度，使得施加到半导体激光器芯片的表面的中心的等效应力与子安装座接合的乘积和宽度方向上的应力子安装不超过通过改变AlN子座的厚度和宽度而获得的产品的最大值的70％。

2. 发明申请

US20090135878A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090135878A1
公开(公告)日：2009-05-28
申请号：US12165674
申请日：2008-07-01
申请人： Tsutomu Yamaguchi , Yoshihisa Tashiro , Kenzo Mori , Hiroo Sakamoto , Takehiro Nishida
发明人： Tsutomu Yamaguchi , Yoshihisa Tashiro , Kenzo Mori , Hiroo Sakamoto , Takehiro Nishida
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： H01S5/4031 , H01S5/02212 , H01S5/0224 , H01S5/02244 , H01S5/02272 , H01S5/02476 , H01S5/4087
摘要： A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.
摘要翻译：半导体激光芯片以结合下降的方式接合到AlN子安装座。子安装架连接到一个包装。 AlN子座连接到杆。与从半导体激光芯片发射的激光束的照射方向垂直的方向是副安装座的宽度方向。确定AlN子安装座的厚度和宽度，使得施加到半导体激光器芯片的表面的中心的等效应力与子安装座接合的乘积和宽度方向上的应力子安装不超过通过改变AlN子座的厚度和宽度而获得的产品的最大值的70％。

3. 发明申请

US20090022197A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090022197A1
公开(公告)日：2009-01-22
申请号：US12104756
申请日：2008-04-17
申请人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
发明人： Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
IPC分类号： H01L33/00 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S2301/14
摘要： Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
摘要翻译：半导体激光元件形成在公共基板上。在其他半导体激光元件的主表面上形成Au电镀。半导体激光器元件安装在具有焊料应用于Au镀层的封装上。在每个半导体激光元件的发光区域彼此相对的区域被指定为第一和第二区域。在每个半导体激光元件的第一和第二区域中，Au镀层的平均厚度不同。

4. 发明授权

US07778299B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07778299B2
公开(公告)日：2010-08-17
申请号：US12251529
申请日：2008-10-15
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/1064 , H01S5/4025 , H01S5/4031
摘要： A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.
摘要翻译：具有双通道脊结构的半导体激光器包括：脊; 位于脊的相对侧的通道部分，夹着脊，并且具有低于脊的等效折射率的等效折射率; 以及限定通道部分的外表面的层，并且具有高于通道部分的等效折射率的等效折射率。该脊具有朝向光出射端面变宽的宽度的喇叭形棱结构，并且脊的宽度最窄的通道部分的宽度比在光出射端面处的通道部分宽。

5. 发明授权

US07602830B2 Monolithic semiconductor laser and method of manufacturing the same 失效
标题翻译：单片半导体激光器及其制造方法
公开(公告)号：US07602830B2
公开(公告)日：2009-10-13
申请号：US11878027
申请日：2007-07-20
申请人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
发明人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/2086 , H01S5/209 , H01S5/2231 , H01S5/34326 , H01S5/34353 , H01S5/4031 , H01S5/4087
摘要： A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
摘要翻译：一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板; 第一双异质结构形成在半导体衬底上的第一区域内，并且具有设置在第一有源层上方和下方的第一覆层; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层上方和下方的第二覆层的第二双异质结构。第一和第二有源层由彼此不同的半导体材料制成。第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。

6. 发明授权

US07804871B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07804871B2
公开(公告)日：2010-09-28
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

7. 发明授权

US07756180B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07756180B2
公开(公告)日：2010-07-13
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

8. 发明申请

US20090290612A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20090290612A1
公开(公告)日：2009-11-26
申请号：US12251529
申请日：2008-10-15
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
IPC分类号： H01S5/22
CPC分类号： H01S5/2231 , H01S5/1064 , H01S5/4025 , H01S5/4031
摘要： A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.
摘要翻译：具有双通道脊结构的半导体激光器包括：脊; 位于脊的相对侧的通道部分，夹着脊，并且具有低于脊的等效折射率的等效折射率; 以及限定通道部分的外表面的层，并且具有高于通道部分的等效折射率的等效折射率。该脊具有朝向光出射端面变宽的宽度的喇叭形棱结构，并且脊的宽度最窄的通道部分的宽度比在光出射端面处的通道部分宽。

9. 发明申请

US20070264738A1 Monolithic semiconductor laser and method of manufacturing the same 失效
标题翻译：单片半导体激光器及其制造方法
公开(公告)号：US20070264738A1
公开(公告)日：2007-11-15
申请号：US11878027
申请日：2007-07-20
申请人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
发明人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
IPC分类号： H01L21/02
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/2086 , H01S5/209 , H01S5/2231 , H01S5/34326 , H01S5/34353 , H01S5/4031 , H01S5/4087
摘要： A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
摘要翻译：一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板; 第一双异质结构形成在半导体衬底上的第一区域内，并且具有设置在第一有源层上方和下方的第一覆层; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层上方和下方的第二覆层的第二双异质结构。第一和第二有源层由彼此不同的半导体材料制成。第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。

10. 发明申请

US20080310473A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20080310473A1
公开(公告)日：2008-12-18
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/22 , H01S5/20
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

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