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1. 发明授权

US06019670A Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system 失效
标题翻译：用于在化学机械抛光系统中调理抛光垫的方法和装置
公开(公告)号：US06019670A
公开(公告)日：2000-02-01
申请号：US814436
申请日：1997-03-10
申请人： Tsungnan Cheng , Shou-Chen Kao , Michael T. Sherwood
发明人： Tsungnan Cheng , Shou-Chen Kao , Michael T. Sherwood
IPC分类号： B24B37/32 , B24B53/007 , B24B53/017 , B24B7/00
CPC分类号： B24B37/32 , B24B53/017
摘要： A chemical mechanical polishing apparatus including a carrier head having an integral conditioning member is described. The conditioning member includes a conditioning surface that may selectively be moved into contact with a polishing surface of a polishing pad. The conditioning member may be connected to a surface of the carrier's retaining ring assembly. As a result, the polishing surface may be conditioned either continuously or intermittently when a substrate is loaded in the carrier for polishing.
摘要翻译：描述了包括具有整体调节部件的载体头的化学机械抛光装置。调理部件包括可选择性地移动成与抛光垫的抛光表面接触的调节表面。调理构件可以连接到承载件的保持环组件的表面。结果，当将基板装载在用于抛光的载体中时，抛光表面可以连续地或间歇地调节。

2. 发明申请

US20050106509A1 Single layer resist liftoff process for nano track width 有权
标题翻译：纳米轨道宽度的单层抗剥离工艺
公开(公告)号：US20050106509A1
公开(公告)日：2005-05-19
申请号：US10714305
申请日：2003-11-14
申请人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
发明人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
IPC分类号： G03F7/00 , G03F7/40 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3163 , G03F7/40 , G03F7/405 , G11B5/3903
摘要： As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.
摘要翻译：随着脱模模式的关键尺寸越来越小，制备具有所需分辨率的剥离抗蚀剂变得越来越困难。通过使用离子束处理和臭氧纤维化的组合来克服这个问题，以形成具有来自单层光致抗蚀剂的底切的剥离图案。离子束工艺用于使抗蚀剂的顶部硬化，同时使用臭氧来氧化和腐蚀下部抗蚀剂侧壁以形成底切。

3. 发明授权

US06287476B1 Electrochemical method to improve MR reader edge definition and device reliability 失效
标题翻译：电化学方法提高MR读取器边缘定义和器件可靠性
公开(公告)号：US06287476B1
公开(公告)日：2001-09-11
申请号：US09332429
申请日：1999-06-14
申请人： Kochan Ju , Shou-Chen Kao , Cherng-Chyi Han , Jei-Wei Chang , Mao-Min Chen
发明人： Kochan Ju , Shou-Chen Kao , Cherng-Chyi Han , Jei-Wei Chang , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.
摘要翻译：使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。通过阳极氧化MR传感器形成钝化层。钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。然后我们在钝化层和MR传感器上沉积铅层。去除剥离结构，其中钝化层限定轨道宽度。钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

4. 发明授权

US06367146B1 Photoresist frame plating method for forming planarized magnetic pole layer 失效
标题翻译：用于形成平面化磁极层的光刻胶框架电镀方法
公开(公告)号：US06367146B1
公开(公告)日：2002-04-09
申请号：US08635097
申请日：1996-04-17
申请人： Cherng-Chyi Han , David Hernandez , Jei-Wei Chang , Shou-Chen Kao
发明人： Cherng-Chyi Han , David Hernandez , Jei-Wei Chang , Shou-Chen Kao
IPC分类号： G11B5127
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , Y10T29/49046
摘要： A method comprises the step of providing a read-write element on a wafer including at least one magnetoresistive stripe, providing a shared pole layer above the magnetoresistive stripe, and planarizing the shared pole layer. Thereafter, a top pole layer is formed above the shared pole layer. Together, the shared and top pole layers form the write element. Because the shared pole layer is planarized, the gap portion of the write element between the shared and top pole layers is flat. Because of this, improved recording density can be achieved.
摘要翻译：一种方法包括在包括至少一个磁阻条纹的晶片上提供读写元件的步骤，在磁阻条上设置共享极层，并平坦化共享极层。此后，在共享极层上形成顶极层。一起，共享和顶极层形成写入元件。由于共用极层被平坦化，所以共用极层和顶极层之间的写入元件的间隙部分是平坦的。因此，可以实现改善的记录密度。

5. 发明授权

US08236484B2 Single layer resist liftoff process for nano track width 有权
标题翻译：纳米轨道宽度的单层抗剥离工艺
公开(公告)号：US08236484B2
公开(公告)日：2012-08-07
申请号：US10714305
申请日：2003-11-14
申请人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
发明人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
IPC分类号： G03F7/40
CPC分类号： G11B5/3163 , G03F7/40 , G03F7/405 , G11B5/3903
摘要： As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.
摘要翻译：随着脱模模式的关键尺寸越来越小，制备具有所需分辨率的剥离抗蚀剂变得越来越困难。通过使用离子束处理和臭氧纤维化的组合来克服这个问题，以形成具有来自单层光致抗蚀剂的底切的剥离图案。离子束工艺用于使抗蚀剂的顶部硬化，同时使用臭氧来氧化和腐蚀下部抗蚀剂侧壁以形成底切。

6. 发明授权

US06274025B1 Chemical approach to develop lift-off photoresist structure and passivate MR sensor 失效
标题翻译：化学方法开发剥离光致抗蚀剂结构和钝化MR传感器
公开(公告)号：US06274025B1
公开(公告)日：2001-08-14
申请号：US09332433
申请日：1999-06-14
申请人： Jei-Wei Chang , Shou-Chen Kao , Cherng-Chyi Han , Kochan Ju , Mao-Min Chen
发明人： Jei-Wei Chang , Shou-Chen Kao , Cherng-Chyi Han , Kochan Ju , Mao-Min Chen
IPC分类号： C25D502
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A method to form a passivation layer over a MR Sensor so that the passivation layer defines the track width. The passivation layer is formed simultaneously with the development of the lift off structure in a novel developing/oxidizing solution that oxidizes the MR sensor and develops the photoresist. The passivation layer is an electrical insulator that prevents sensor current from shunting through the overspray of the leads and a heat conductor to allow MR heat to dissipate through the overspray. The method comprises: spinning-on and printing a lift-off photoresist structure over the MR sensor. Next, the lift-off photoresist structure is developed. The MR sensor is anodized in a developing/oxidizing solution to: (1) remove portions of the lower photoresist and (2) to form a (e.g., thin NiFeO) passivation layer on the MR layer at least partially under the upper photoresist layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure. Then, a lead layer is deposited over the passivation layer and MR sensor. The lift-off structure is removed.
摘要翻译：在MR传感器上形成钝化层的方法，使得钝化层限定轨道宽度。钝化层与氧化MR传感器并显影光致抗蚀剂的新型显影/氧化溶液中的剥离结构的发展同时形成。钝化层是电绝缘体，其防止传感器电流通过引线的过度喷射和热导体分流，以允许MR热量通过过喷器消散。该方法包括：在MR传感器上旋转并打印剥离光致抗蚀剂结构。接下来，开发剥离光致抗蚀剂结构。将MR传感器在显影/氧化溶液中进行阳极氧化，以：（1）去除下部光致抗蚀剂的部分，和（2）在MR层上至少部分地在上部光致抗蚀剂层下形成（例如，薄的NiFeO）钝化层。钝化层被蚀刻以除去未被剥离结构覆盖的钝化层。然后，在钝化层和MR传感器上沉积引线层。剥离结构被去除。

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