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1. 发明授权

US07312535B2 Semiconductor device having an anti-oxidizing layer that inhibits corrosion of an interconnect layer 有权
标题翻译：具有抑制互连层腐蚀的抗氧化层的半导体器件
公开(公告)号：US07312535B2
公开(公告)日：2007-12-25
申请号：US10803832
申请日：2004-03-18
申请人： Toshiyuki Takewaki , Noriaki Oda , Yorinobu Kunimune
发明人： Toshiyuki Takewaki , Noriaki Oda , Yorinobu Kunimune
IPC分类号： H01L23/48
CPC分类号： H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L23/3192 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05166 , H01L2224/05551 , H01L2224/05567 , H01L2224/05624 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05552 , H01L2924/00014 , H01L2924/013 , H01L2924/01014
摘要： The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film 116, a TiN film 115 and a pad metal film 117 are formed in this sequence on the upper surface of a Cu interconnect 112. The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer 113, and thereafter a polyimide film 118 is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film 117, and finally a solder ball 120 is joined thereto.
摘要翻译：本发明的目的是提高半导体器件的抗冲击性，以抵抗顶表面方向的冲击，提高顶层互连表面的耐腐蚀性，从而抑制上层发生的裂纹当在无缺陷/缺陷筛选期间当电极垫的表面被探针戳住时，并且当在无缺陷/缺陷期间电极垫的表面被探针戳戳时，防止互连层的腐蚀筛选在Cu互连112的上表面上依次形成Ti膜116，TiN膜115和垫金属膜117.热退火工艺在惰性气体气氛中进行以形成Ti-Cu层113，然后形成聚酰亚胺膜118，然后在其上设置盖通孔以露出垫金属膜117的表面，最后将焊球120接合到其上。

2. 发明授权

US07846830B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07846830B2
公开(公告)日：2010-12-07
申请号：US11974389
申请日：2007-10-12
申请人： Toshiyuki Takewaki , Noriaki Oda , Yorinobu Kunimune
发明人： Toshiyuki Takewaki , Noriaki Oda , Yorinobu Kunimune
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L23/3192 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05166 , H01L2224/05551 , H01L2224/05567 , H01L2224/05624 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05552 , H01L2924/00014 , H01L2924/013 , H01L2924/01014
摘要： The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film 116, a TiN film 115 and a pad metal film 117 are formed in this sequence on the upper surface of a Cu interconnect 112. The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer 113, and thereafter a polyimide film 118 is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film 117, and finally a solder ball 120 is joined thereto.
摘要翻译：本发明的目的是提高半导体器件的抗冲击性，以抵抗顶表面方向的冲击，提高顶层互连表面的耐腐蚀性，从而抑制上层发生的裂纹当在无缺陷/缺陷筛选期间当电极垫的表面被探针戳住时，并且当在无缺陷/缺陷期间电极垫的表面被探针戳戳时，防止互连层的腐蚀筛选在Cu互连112的上表面上依次形成Ti膜116，TiN膜115和垫金属膜117.热退火工艺在惰性气体气氛中进行以形成Ti-Cu层113，然后形成聚酰亚胺膜118，然后在其上设置盖通孔以露出垫金属膜117的表面，最后将焊球120接合到其上。

3. 发明申请

US20080044997A1 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080044997A1
公开(公告)日：2008-02-21
申请号：US11974389
申请日：2007-10-12
申请人： Toshiyuki Takewaki , Noriaki Oda , Yorinobu Kunimune
发明人： Toshiyuki Takewaki , Noriaki Oda , Yorinobu Kunimune
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L23/3192 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05147 , H01L2224/05166 , H01L2224/05551 , H01L2224/05567 , H01L2224/05624 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05552 , H01L2924/00014 , H01L2924/013 , H01L2924/01014
摘要： The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film 116, a TiN film 115 and a pad metal film 117 are formed in this sequence on the upper surface of a Cu interconnect 112. The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer 113, and thereafter a polyimide film 118 is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film 117, and finally a solder ball 120 is joined thereto.
摘要翻译：本发明的目的是提高半导体器件的抗冲击性，以抵抗顶表面方向的冲击，提高顶层互连表面的耐腐蚀性，从而抑制上层发生的裂纹当在无缺陷/缺陷筛选期间当电极垫的表面被探针戳住时，并且当在无缺陷/缺陷期间电极垫的表面被探针戳戳时，防止互连层的腐蚀筛选在Cu互连112的上表面上依次形成Ti膜116，TiN膜115和垫金属膜117.热退火工艺在惰性气体气氛中进行以形成Ti-Cu层113，然后形成聚酰亚胺膜118，然后在其上设置盖通孔以露出垫金属膜117的表面，最后将焊球120接合到其上。

4. 发明申请

US20050067700A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050067700A1
公开(公告)日：2005-03-31
申请号：US10953454
申请日：2004-09-30
申请人： Toshiyuki Takewaki , Noriaki Oda
发明人： Toshiyuki Takewaki , Noriaki Oda
IPC分类号： H01L21/60 , H01L23/485 , H01L21/44 , H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/0401 , H01L2224/05017 , H01L2224/05018 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05647 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , Y10S438/927 , H01L2924/00014 , H01L2224/05552
摘要： There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in the opening of the SiON film. Such constitution provides the structure, in which the upper portion of the interfaces between the Cu pad areas and the insulating areas are covered by the SiON film.
摘要翻译：提供了一种解决了在焊盘部分中粘附不良的问题，同时抑制焊盘部分的凹陷。形成覆盖绝缘区域并且具有Cu焊盘区域上方的开口的SiON膜，并且在SiON膜的开口中形成阻挡金属膜。这种结构提供了其中Cu焊盘区域和绝缘区域之间的界面的上部被SiON膜覆盖的结构。

5. 发明授权

US07692265B2 Fuse and seal ring 有权
标题翻译：保险丝和密封圈
公开(公告)号：US07692265B2
公开(公告)日：2010-04-06
申请号：US11094151
申请日：2005-03-31
申请人： Toshiyuki Takewaki , Noriaki Oda
发明人： Toshiyuki Takewaki , Noriaki Oda
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device excellent in reliability. The semiconductor device is comprised of a semiconductor substrate, an insulating portion having a multilayer insulating film composed of an etch stopper film, an insulating film, an etch stopper film, an insulating film, an etch stopper film and an insulating film provided on an upper portion of the semiconductor, fuses provided on the insulating portion, and a seal ring composed of a copper containing metal film, a barrier metal film, a copper containing metal film and a barrier metal film embedded in the insulating portion so as to surround a region just below the fuses.
摘要翻译：提供了可靠性优异的半导体器件。半导体器件由半导体衬底，具有由蚀刻停止膜，绝缘膜，蚀刻停止膜，绝缘膜，蚀刻停止膜和设置在上部的绝缘膜构成的多层绝缘膜的绝缘部分半导体部分，设置在绝缘部分上的保险丝，以及由包含铜的金属膜，阻挡金属膜，含铜金属膜和嵌入绝缘部分中的阻挡金属膜构成的密封环，以围绕区域就在保险丝下面。

6. 发明申请

US20050218477A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050218477A1
公开(公告)日：2005-10-06
申请号：US11094151
申请日：2005-03-31
申请人： Toshiyuki Takewaki , Noriaki Oda
发明人： Toshiyuki Takewaki , Noriaki Oda
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L21/82 , H01L23/525 , H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device excellent in reliability. The semiconductor device is comprised of a semiconductor substrate, an insulating portion having a multilayer insulating film composed of an etch stopper film, an insulating film, an etch stopper film, an insulating film, an etch stopper film and an insulating film provided on an upper portion of the semiconductor, fuses provided on the insulating portion, and a seal ring composed of a copper containing metal film, a barrier metal film, a copper containing metal film and a barrier metal film embedded in the insulating portion so as to surround a region just below the fuses.
摘要翻译：提供了可靠性优异的半导体器件。半导体器件由半导体衬底，具有由蚀刻停止膜，绝缘膜，蚀刻停止膜，绝缘膜，蚀刻停止膜和设置在上部的绝缘膜构成的多层绝缘膜的绝缘部分半导体部分，设置在绝缘部分上的保险丝，以及由包含铜的金属膜，阻挡金属膜，含铜金属膜和嵌入绝缘部分中的阻挡金属膜构成的密封环，以围绕区域就在保险丝下面。

7. 发明授权

US07508082B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07508082B2
公开(公告)日：2009-03-24
申请号：US11844381
申请日：2007-08-24
申请人： Toshiyuki Takewaki , Noriaki Oda
发明人： Toshiyuki Takewaki , Noriaki Oda
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/0401 , H01L2224/05017 , H01L2224/05018 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05647 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , Y10S438/927 , H01L2924/00014 , H01L2224/05552
摘要： There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in the opening of the SiON film. Such constitution provides the structure, in which the upper portion of the interfaces between the Cu pad areas and the insulating areas are covered by the SiON film.
摘要翻译：提供了一种解决了在焊盘部分中粘附不良的问题，同时抑制焊盘部分的凹陷。形成覆盖绝缘区域并且具有Cu焊盘区域上方的开口的SiON膜，并且在SiON膜的开口中形成阻挡金属膜。这种结构提供了其中Cu焊盘区域和绝缘区域之间的界面的上部被SiON膜覆盖的结构。

8. 发明授权

US07327031B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07327031B2
公开(公告)日：2008-02-05
申请号：US10953454
申请日：2004-09-30
申请人： Toshiyuki Takewaki , Noriaki Oda
发明人： Toshiyuki Takewaki , Noriaki Oda
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/0401 , H01L2224/05017 , H01L2224/05018 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05647 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , Y10S438/927 , H01L2924/00014 , H01L2224/05552
摘要： There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in the opening of the SiON film. Such constitution provides the structure, in which the upper portion of the interfaces between the Cu pad areas and the insulating areas are covered by the SiON film.
摘要翻译：提供了一种解决了在焊盘部分中粘附不良的问题，同时抑制焊盘部分的凹陷。形成覆盖绝缘区域并且具有Cu焊盘区域上方的开口的SiON膜，并且在SiON膜的开口中形成阻挡金属膜。这种结构提供了其中Cu焊盘区域和绝缘区域之间的界面的上部被SiON膜覆盖的结构。

9. 发明授权

US08053863B2 Electrical fuse and semiconductor device 有权
标题翻译：电熔丝和半导体器件
公开(公告)号：US08053863B2
公开(公告)日：2011-11-08
申请号：US12461159
申请日：2009-08-03
申请人： Toshiyuki Takewaki
发明人： Toshiyuki Takewaki
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse comprises: an interconnect to be cut; and a first terminal and a second terminal which are respectively provided at both ends of the interconnect to be cut. The interconnect to be cut comprises: a first orientation film which contains copper as a main component and is oriented in a (111) plane; and a second orientation film which contains copper as a main component and is oriented in a (511) plane. The second orientation film is provided inside the first orientation film over a width direction of the first orientation film, which is perpendicular to a direction from the first terminal toward the second terminal, so as to partition the first orientation film. Accordingly, it becomes possible to securely cut the electrical fuse whose constituent material is copper, and moreover, to maintain a satisfactory cut state of the electrical fuse after the cutting.
摘要翻译：电熔丝包括：要切割的互连; 以及分别设置在要切割的互连件的两端的第一端子和第二端子。要切割的互连件包括：第一取向膜，其包含铜作为主要成分并且定向在（111）面中; 以及以（511）面取向的铜为主要成分的第二取向膜。第二取向膜设置在第一取向膜的与第一端子朝向第二端子的方向垂直的宽度方向上的第一取向膜的内部，以分隔第一取向膜。因此，可以可靠地切断构成材料为铜的电熔丝，并且在切割之后保持电熔丝的令人满意的切断状态。

10. 发明授权

US07842602B2 Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method 有权
标题翻译：具有硅扩散金属布线层的半导体器件及其制造方法
公开(公告)号：US07842602B2
公开(公告)日：2010-11-30
申请号：US11750116
申请日：2007-05-17
申请人： Koichi Ohto , Toshiyuki Takewaki , Tatsuya Usami , Nobuyuki Yamanishi
发明人： Koichi Ohto , Toshiyuki Takewaki , Tatsuya Usami , Nobuyuki Yamanishi
IPC分类号： H01L21/4763
CPC分类号： H01L21/022 , H01L21/02074 , H01L21/02118 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/3124 , H01L21/3148 , H01L21/31633 , H01L21/318 , H01L21/3185 , H01L21/32136 , H01L21/76801 , H01L21/76802 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76814 , H01L21/76834 , H01L21/76838 , H01L21/76849 , H01L21/76877 , H01L21/76883 , H01L21/76886 , H01L21/76889 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.
摘要翻译：在半导体器件中，在绝缘底层上形成具有凹槽的绝缘中间层。不含金属硅化物的硅扩散金属层埋入槽内。在硅扩散金属层和绝缘中间层上形成金属扩散阻挡层。

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