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    • 3. 发明授权
    • Catalytic converter device
    • 催化转化装置
    • US08540940B2
    • 2013-09-24
    • US13201394
    • 2010-03-29
    • Toshio MurataHideyuki Kohmitsu
    • Toshio MurataHideyuki Kohmitsu
    • F01N3/10B01D50/00
    • F01N3/2842B01D53/88F01N3/2026F01N3/2853F01N3/2864Y02T10/26
    • To obtain a catalytic converter device that can suppress a drop in the effect of heating a catalyst carrier caused by water droplets produced in an exhaust pipe. A holding mat that holds a catalyst carrier in a case cylinder is given a three-layer structure comprising an inside fiber layer, a solid layer, and an outside fiber layer. The solid layer projects toward an upstream side from an upstream-side end face of the catalyst carrier, and an interstice portion is configured between the projecting portion and the case cylinder. Water droplets adhering to the inner peripheral surface of the case cylinder do not reach the catalyst carrier because the projecting portion serves as a barrier.
    • 得到能够抑制由排气管中产生的水滴引起的催化剂载体的加热效果下降的催化转化装置。 给壳体筒内保持催化剂载体的保持垫被赋予包括内纤维层,固体层和外纤维层的三层结构。 固体层从催化剂载体的上游侧端面向上游侧突出,并且在突出部与壳体筒之间配置间隙部。 由于突出部作为屏障,附着在壳体筒的内周面的水滴不会到达催化剂载体。
    • 7. 发明申请
    • CATHODE MATERIAL, MANUFACTURING METHOD OF CATHODE MATERIAL, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERIES PROVIDED WITH THE CATHODE MATERIAL
    • 阴极材料,阴极材料的制造方法和阴极材料提供的非电解电解质二次电池
    • US20100086855A1
    • 2010-04-08
    • US12504165
    • 2009-07-16
    • Mariko KohmotoToru TabuchiTokuo InamasuToshio Murata
    • Mariko KohmotoToru TabuchiTokuo InamasuToshio Murata
    • H01M4/58
    • H01M4/5825H01M4/02H01M4/362H01M4/587H01M4/625H01M10/052H01M2004/021H01M2004/028
    • An object is to provide a positive electrode material capable of increasing a discharge capacity of a nonaqueous electrolyte secondary battery, a production method thereof, and the like. Provided are a positive electrode material having a particulate active substance containing lithium manganese phosphate, wherein the particulate active substance is provided with a membranous material containing carbon and attached to the surface of the particulate active substance, and a projecting material containing carbon and projecting outward from the surface of the particulate active substance or the membranous material, a method for producing a positive electrode material having a particulate active substance containing lithium manganese phosphate, which performs a hydrothermal synthesis step of forming a particle containing lithium manganese phosphate by a hydrothermal method in the presence of a first organic compound with a molecular weight of 350 or less, which has two or more hydroxy groups in a molecule, and a calcination step of calcinating the particle in the presence of a second organic compound with a molecular weight of 500 or more, which has a hydroxy group in a molecule, and the like.
    • 目的在于提供能够提高非水电解质二次电池的放电容量的正极材料及其制造方法等。 本发明提供一种具有含有磷酸锰锂的活性物质的正极材料,其特征在于,所述粒状活性物质含有含碳的膜状物,附着在所述粒状活性物质的表面,以及含有碳的突出物质, 颗粒状活性物质或膜质材料的表面,具有含有磷酸锰锂的粒状活性物质的正极材料的制造方法,其通过水热法在水热法中形成含有磷酸锰锂的粒子的水热合成步骤 在分子中具有两个或多个羟基的分子量为350以下的第一有机化合物的存在和在分子量为500以上的第二有机化合物存在下煅烧该颗粒的煅烧步骤 ,其具有一个mol的羟基 ecule等。
    • 8. 发明申请
    • Optical tomographic image photographing apparatus
    • 光学断层图像摄影装置
    • US20100007848A1
    • 2010-01-14
    • US12458234
    • 2009-07-06
    • Toshio Murata
    • Toshio Murata
    • A61B3/14G01B9/02
    • G01B9/0203A61B3/102G01B9/02044G01B9/02064G01B9/02078G01B9/02083G01B9/02091G01N21/4795
    • An apparatus has an optical system detecting spectral information and having an optical scanner and a driving unit changing the optical path length by moving an optical member, a monitor, and a unit controlling the driving unit, obtaining a tomographic image by performing Fourier analysis on the information and displaying the obtained image, in which a front surface of an examined object is positioned on the back side of a depth position where optical path lengths of measurement light and reference light become equal to obtain a normal image of the tomographic image, the front surface of the examined object is positioned on the front side of the depth position to obtain an inverted image of the tomographic image, and at least one of dispersion correction processing corresponding to the information and image combining processing is performed on both normal and inverted images, and the images are displayed.
    • 一种装置具有检测光谱信息的光学系统,并具有通过移动光学部件,监视器和控制驱动单元的单元来改变光路长度的光学扫描器和驱动单元,通过对该驱动单元执行傅立叶分析来获得断层图像 信息并显示所获得的图像,其中检查对象的前表面位于测量光和参考光的光路长度相等的深度位置的背面,以获得断层图像的正常图像,前面 检查对象的表面位于深度位置的前侧以获得断层图像的反转图像,并且对正常和反转图像执行与信息和图像组合处理相对应的色散校正处理中的至少一个, 并显示图像。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US06169299A
    • 2001-01-02
    • US09258818
    • 1999-02-26
    • Sachiko KawajiToshio MurataMasayasu IshikoTsutomu Uesugi
    • Sachiko KawajiToshio MurataMasayasu IshikoTsutomu Uesugi
    • H01L2974
    • H01L29/749H01L29/0649H01L29/7455
    • The MOS gate thyristor of the present invention has a p+ type anode layer (first semiconductor layer), an n− type base region (second semiconductor layer) with the function of acting as a drift layer, a p− type base region (third semiconductor layer), and an n+ type impurity diffusion layer (fourth semiconductor layer) with the function of acting as a source region. On the surface of the base region, an n+ type floating emitter region (fifth semiconductor layer) is formed, while a first channel region (sixth semiconductor layer) is formed between the impurity diffusion layer and the floating emitter region. At the lower ends of the fourth semiconductor layer and the first channel region an insulation layer is formed. The insulation layer acts to suppress the operation of a parasitic thyristor to ensure a reliable turn-off operation of the transistor. A portion of the semiconductor extends from the n+ type floating emitter region and lies underneath the insulation layer in the direction alongside the principal plane of the p+ type anode layer. The extended semiconductor portion helps broaden the carrier injection path.
    • 本发明的MOS栅极晶闸管具有p +型阳极层(第一半导体层),具有作为漂移层的功能的n型基极区域(第二半导体层),p型基极区域(第三半导体层 层)和具有作为源极区域的功能的n +型杂质扩散层(第四半导体层)。 在基极区域的表面上形成n +型浮置发射极区域(第五半导体层),同时在杂质扩散层和浮置发射极区域之间形成第一沟道区域(第六半导体层)。 在第四半导体层的下端和第一沟道区域形成绝缘层。 绝缘层用于抑制寄生晶闸管的操作,以确保晶体管的可靠的关断操作。 半导体的一部分从n +型浮置发射极区域延伸并且位于绝缘层下方沿着p +型阳极层的主平面的方向。 延伸的半导体部分有助于拓宽载流子注入路径。