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    • 4. 发明申请
    • PATTERN INSPECTION METHOD
    • 模式检验方法
    • US20080151230A1
    • 2008-06-26
    • US12033599
    • 2008-02-19
    • Toru TojoToshiyuki WatanabeIkunao IsomuraAkihiko Sekine
    • Toru TojoToshiyuki WatanabeIkunao IsomuraAkihiko Sekine
    • G01N21/00
    • G01N21/956
    • A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradiation of the second inspection light, and a space separation mechanism provided in the vicinity of an optical focal plane toward the pattern formed surface, and spatially separates an irradiation area of the first and second inspection lights such that the transmitted and reflected lights from the substrate are imaged in two discrete areas separated on the optical focal plane.
    • 图案检查装置包括将预定波长的第一检查光施加到与基板的图案形成表面相对的表面的照明光学器件以及其波长等于第一检查光的波长与图案的第二检查光 形成表面,检测器,通过照射第一检查光和通过照射第二检查光的来自基板的反射光独立地检测来自基板的透射光;以及空间分离机构,设置在光学焦平面附近,朝向 图案形成表面,并且在空间上分离第一和第二检查光的照射区域,使得来自基板的透射和反射光成像在在光学焦平面上分离的两个离散区域中。
    • 6. 发明申请
    • Pattern defect inspection method and apparatus
    • 图案缺陷检查方法和装置
    • US20060239535A1
    • 2006-10-26
    • US11373501
    • 2006-03-13
    • Akira TakadaToru Tojo
    • Akira TakadaToru Tojo
    • H04N7/18G06K9/00G06K9/62G01N21/00
    • G03F1/84G01N21/95607G06K9/00G06K2209/19G06T7/001G06T2207/30148
    • A method and an apparatus for irradiating a measurement sample with an energy beam, a pattern being formed in the measurement sample, providing an optical system for detecting transmitted energy beam or reflected energy beam from the measurement sample, obtaining a pattern image, and comparing design data of the pattern and an image of the obtained image pattern to inspect a defect of the pattern formed in the measurement sample, wherein the measurement sample is a so-called photomask, a design pattern produced in producing the photomask is used as the design data of the pattern, and, in a procedure of performing inspection by comparing the obtained image and the design data, the design data is converted into an image (hereinafter referred to as wafer image) by a proper method, the wafer image being formed through a stepper used for actually forming the pattern of the photomask on a wafer, the obtained image actually measured is simultaneously converted into a wafer image by a proper method, and the defect is detected by comparing both wafer images to each other.
    • 一种用能量束照射测量样品的方法和装置,在测量样品中形成图案,提供用于检测来自测量样品的透射能量束或反射能量束的光学系统,获得图案图像和比较设计 图案的数据和所获得的图像图案的图像,以检查在测量样品中形成的图案的缺陷,其中测量样本是所谓的光掩模,使用在制备光掩模中产生的设计图案作为设计数据 的图案,并且在通过比较所获得的图像和设计数据进行检查的过程中,通过适当的方法将设计数据转换为图像(以下称为晶片图像),晶片图像通过 用于在晶片上实际形成光掩模的图案的步进器,将所获得的实际测量的图像同时转换成晶片图像通过适当的m 并且通过将两个晶片图像彼此进行比较来检测缺陷。
    • 7. 发明申请
    • Defect inspecting apparatus and defect inspection method
    • 缺陷检查装置和缺陷检查方法
    • US20060087649A1
    • 2006-04-27
    • US11248124
    • 2005-10-13
    • Riki OgawaToru Tojo
    • Riki OgawaToru Tojo
    • G01N21/88
    • G03F1/74G01N21/9501G01N21/95607
    • In a defect inspecting apparatus, an illumination optical system illuminate a mask having a patterned surface, the optical beam passing through the mask is split into two beam components which is guided in first and second image pickup sensors. The pickup sensors has first and second pickup fields on the patterned surface, which pick up first and second parts of the mask image. The first and second pickup fields are parallel to each other and displaced from each other by (2n+1)×d/2 in the longitudinal direction thereof, where d denotes a longitudinal dimension of each pixel image in the first and second pick up fields and n denotes an integer equal to or larger than 0. The first and second parts of the mask image are merged to form a pattern image, and a defect in the mask is detected on the basis of the pattern image.
    • 在缺陷检查装置中,照明光学系统照射具有图案化表面的掩模,通过掩模的光束被分割成在第一和第二图像拾取传感器中被引导的两个光束分量。 拾取传感器在图案化表面上具有第一和第二拾取场,其拾取掩模图像的第一和第二部分。 第一拾取场和第二拾取场彼此平行并且在其纵向彼此相互错位(2n + 1)xd / 2,其中d表示第一和第二拾取场中每个像素图像的纵向尺寸, n表示等于或大于0的整数。掩模图像的第一部分和第二部分被合并以形成图案图像,并且基于图案图像检测掩模中的缺陷。
    • 8. 发明申请
    • Defect inspection apparatus and defect inspection method
    • 缺陷检查装置和缺陷检查方法
    • US20050232477A1
    • 2005-10-20
    • US11072317
    • 2005-03-07
    • Shinji SugiharaIkunao IsomuraJunji OakiToru Tojo
    • Shinji SugiharaIkunao IsomuraJunji OakiToru Tojo
    • G01B11/24G01N21/956G01R31/311G03F1/84G06K9/00G06T1/00G06T5/20G06T7/00H01L21/027H01L21/66
    • G06T7/001G01R31/311G03F1/84G06T2207/30148
    • A defect inspection method comprises irradiating a sample including a pattern under inspection with light, acquiring measurement pattern data of the pattern based on intensity of light reflected by the sample, generating conversion data including pixel data corresponding to the measurement pattern data from design data of the sample, applying FIR filter process to the conversion data, reconstructing the conversion data by replacing pixel data having value not larger than first reference value with first pixel data, replacing pixel data having value larger than second reference value larger than first reference value with second pixel data having value larger than first pixel data, replacing pixel data having value larger than first reference value and less than second reference value with third pixel data having value between the value of first and second pixel data, the pixel data having larger value being replaced with third pixel data having higher value.
    • 缺陷检查方法包括用光照射包括检查中的图案的样品,基于由样品反射的光的强度获取图案的测量图案数据,生成包括与来自样品的设计数据相对应的测量图案数据的像素数据的转换数据 将FIR滤波处理应用于转换数据,通过用第一像素数据替换具有不大于第一参考值的像素数据来重构转换数据,用第二像素替换具有大于第一参考值的值的大于第二参考值的像素数据 具有大于第一像素数据的数据的数据,替换具有大于第一参考值且小于第二参考值的像素数据,其中第三像素数据具有在第一和第二像素数据的值之间的值,具有较大值的像素数据被替换为 第三像素数据具有较高的值。
    • 9. 发明授权
    • Apparatus for inspecting slight defects on a photomask pattern
    • 用于检查光掩模图案上的轻微缺陷的装置
    • US6100970A
    • 2000-08-08
    • US12034
    • 1998-01-22
    • Hisakazu YoshinoAkihiko SekineToru TojoMitsuo Tabata
    • Hisakazu YoshinoAkihiko SekineToru TojoMitsuo Tabata
    • G01N21/956G03F1/26G03F1/32G03F1/84G01N21/00
    • G03F1/26G01N21/956G03F1/84G03F1/32
    • A photomask defect inspection method is provided by which defects of pin holes with the diameter equal to or less than 0.35 .mu.m can be detected with certainty. According to the inspection method, a pattern whose image is projected onto an imaging position by the use of illumination light (P1) for exposure consists of light transmitting portions (41) formed on a glass base (2) and light intercepting portions (42) which transmit part of the illumination light (P1) in such a way that a phase of the part of the illumination light (P1) passing through the light intercepting portions (42) is delayed with respect to a phase of the illumination light (P1) passing through the light transmitting portions (41). Slight detects in the photomask pattern are detected on the basis of a signal obtained by illuminating the pattern with inspection light having an inspection wavelength in which the transmittance (T) of the light intercepting portions (42) is defined in the following formula on the basis of a signal detection limit (Thr). When the signal detection limit (Thr) of an inspection circuit is calculated on the supposition that a signal level of the inspection light passing through the light transmitting portions (41) is equal to 1, the relational expression is T.gtoreq.(Thr-0.01).sup.1/1.8.
    • 提供一种光掩模缺陷检查方法,可以确定地检测直径等于或小于0.35μm的销孔的缺陷。 根据检查方法,通过使用用于曝光的照明光(P1)将图像投影到成像位置的图案由形成在玻璃基座(2)和遮光部分(42)上的透光部分(41)组成, 其以照明光(P1)的相位延迟照明光(P1)的通过遮光部(42)的一部分的相位的方式透射部分照明光(P1) 穿过透光部分(41)。 基于通过用具有以下公式定义遮光部分(42)的透射率(T)的检查波长的检查光照射图案而获得的信号来检测光掩模图案中的轻微检测, 的信号检测限(Thr)。 当考虑通过透光部(41)的检查光的信号电平等于1来计算检查电路的信号检测限(Thr)时,关系式为T> / =(Thr- 0.01)+ E,fra 1 / 1.8 + EE。
    • 10. 发明授权
    • Sample inspection apparatus and sample inspection method
    • 样品检验仪器和样品检验方法
    • US5960106A
    • 1999-09-28
    • US413704
    • 1995-03-30
    • Hideo TsuchiyaToru TojoMitsuo TabataToshiyuki WatanabeEiichi Kobayashi
    • Hideo TsuchiyaToru TojoMitsuo TabataToshiyuki WatanabeEiichi Kobayashi
    • G01N21/88G01N21/93G01N21/956G03F1/84G06T1/00G06T7/00H01L21/027G06K9/00
    • G06T7/0006G06T2207/30148
    • In a method of inspecting a sample on which a pattern relating to fabrication of a semiconductor device is formed, there are provided a light radiation unit, an acquiring unit, a storage unit, a template, a calculation unit, a correction unit, a defect detection unit and an output unit. Pinhole shape data to be detected of the pattern is stored in the template. The calculation unit calculates the degree of coincidence between the pinhole shape data stored in the template and the measured image data stored in the storage unit in units of a predetermined amount of data. The correction unit corrects a portion of the measured image data corresponding to a value of the degree of coincidence exceeding a second predetermined value in units of the predetermined amount of data, when the degree of coincidence obtained by the calculation unit has exceeded a first predetermined value, thereby correcting the portion of the measured image data including the detected pinhole. The defect detection unit detects a defect in the pattern on the basis of the corrected measured image data portion including the pinhole, which is obtained by the correcting unit, and the measured image data.
    • 在形成有与半导体器件的制造有关的图案的样品的检查方法中,设置有光照单元,获取单元,存储单元,模板,计算单元,校正单元,缺陷 检测单元和输出单元。 要检测的图案的针孔形状数据存储在模板中。 计算单元以预定量的数据为单位计算存储在模板中的针孔形状数据与存储在存储单元中的测量图像数据之间的一致度。 当由计算单元获得的一致度已经超过第一预定值时,校正单元以与预定数据量为单位对应的符合度超过第二预定值的值的部分测量图像数据进行校正 从而校正包括检测到的针孔的测量图像数据的部分。 缺陷检测单元基于由校正单元获得的包括针孔的校正的测量图像数据部分和测量的图像数据来检测图案中的缺陷。