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1. 发明授权

US06414825B1 Thin film device, thin film magnetic head and magnetoresistive element 有权
标题翻译：薄膜器件，薄膜磁头和磁阻元件
公开(公告)号：US06414825B1
公开(公告)日：2002-07-02
申请号：US09409382
申请日：1999-09-30
申请人： Toru Inoue , Koichi Terunuma
发明人： Toru Inoue , Koichi Terunuma
IPC分类号： G11B539
CPC分类号： G11B5/3903 , G11B5/235 , G11B5/3133 , G11B5/40
摘要： An object of the invention is to improve the thermal conductivity and the hardness of a first shield gap film and a second shield gap film. Another object is to improve the thermal conductivity while decreasing the stress. The first shield gap film and the second shield gap film are formed of an insulating film which includes at least one of BN, SiN or CN as the main component, a little Ar and oxygen. Higher thermal conductivity can be obtained by using the insulating film which includes at least one of BN, SiN, or CN so that the heat generated in an MR element can be effectively dissipated. In addition, including Ar improves the hardness so that excessive polishing can be suppressed at the time of forming the air bearing surface. Moreover, including oxygen decreases the stress and exfoliation of the first and the second shield gap films can be avoided.
摘要翻译：本发明的目的是提高第一屏蔽间隙膜和第二屏蔽间隙膜的热导率和硬度。另一个目的是提高导热性同时降低应力。第一屏蔽间隙膜和第二屏蔽间隙膜由包括BN，SiN或CN中的至少一种作为主要成分，少量Ar和氧的绝缘膜形成。通过使用包括BN，SiN或CN中的至少一种的绝缘膜可以获得更高的导热性，使得可以有效地消散在MR元件中产生的热量。此外，包括Ar提高硬度，从而在形成空气轴承表面时可以抑制过多的抛光。此外，包括氧减少了应力，并且可以避免第一和第二屏蔽间隙膜的剥离。

2. 发明授权

US06404603B1 Thin film device, thin film head, and magnetoresistive element 有权
标题翻译：薄膜器件，薄膜头和磁阻元件
公开(公告)号：US06404603B1
公开(公告)日：2002-06-11
申请号：US09409429
申请日：1999-09-30
申请人： Toru Inoue , Koichi Terunuma
发明人： Toru Inoue , Koichi Terunuma
IPC分类号： G11B5235
CPC分类号： G11B5/3903 , G11B5/3133 , G11B5/40
摘要： An object of the invention is to improve thermal conductivity of a first and a second shield gap films and to suppress a rise in temperature in an MR element. A first shield gap film and a second shield gap film are formed of an insulating film which includes AlN as a main component and the (002) plane of AlN is oriented to the vertical direction to the surface of the insulating film. As a result, higher thermal conductivity can be attained compared to the case where a plurality of crystal surfaces of AlN are oriented to the vertical direction to the surface of the insulating film, and the heat generated in the MR element can be effectively dissipated. The insulating film may include a small amount of Ar. In such a case, the hardness is increased preventing the first and second shield gap films from being excessively polished when forming an air bearing surface. The insulating film may also include oxygen. If the insulating film includes oxygen, the stress is decreased and exfoliation of the insulating film is avoided.
摘要翻译：本发明的目的是提高第一和第二屏蔽间隙膜的导热性并抑制MR元件的温度上升。第一屏蔽间隙膜和第二屏蔽间隙膜由绝缘膜形成，绝缘膜包括 AlN作为主要成分，AlN的（002）面取向为与绝缘膜的表面垂直的方向。结果，与AlN的多个晶面相对于绝缘膜的表面的垂直方向取向的情况相比，可以获得更高的导热性，并且可以有效地消散MR元件中产生的热量。绝缘膜可以包括少量的Ar。在这种情况下，增加硬度，防止在形成空气轴承表面时第一和第二屏蔽间隙膜被过度抛光。绝缘膜也可以包括氧。如果绝缘膜包含氧，则应力降低，并且避免了绝缘膜的剥离。

3. 发明申请

US20070039166A1 Process to manufacture narrow track CPP head with bias cancellation 有权
标题翻译：制造具有偏压消除的窄轨CPP头的工艺
公开(公告)号：US20070039166A1
公开(公告)日：2007-02-22
申请号：US11588563
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

4. 发明授权

US07065859B2 Method for manufacturing a thin film magnetic head 失效
标题翻译：薄膜磁头制造方法
公开(公告)号：US07065859B2
公开(公告)日：2006-06-27
申请号：US10725407
申请日：2003-12-03
申请人： Koichi Terunuma , Tetsuya Mino , Katsuya Kanakubo , Noriyuki Ito
发明人： Koichi Terunuma , Tetsuya Mino , Katsuya Kanakubo , Noriyuki Ito
IPC分类号： G11B5/193 , B44C1/22 , C25D5/02
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3163 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A first magnetic film is formed in a primary pattern which is larger than its definitive pattern and of which edges are located within frames to be used in a frame-plating method for the second magnetic film after forming the first pole portion and the gap film. Then, the second magnetic film is formed by the frame-plating method, and the first magnetic film is etched into the definitive pattern through the second magnetic film as a mask.
摘要翻译：第一磁性膜以形成第一极部和间隙膜的第二磁性膜的第一磁性膜形成为大于其定形图案的主图案，并且其边缘位于用于第二磁性膜的框架镀覆方法的框架内。然后，通过框架镀法形成第二磁性膜，并且通过第二磁性膜作为掩模将第一磁性膜蚀刻到确定的图案中。

5. 发明授权

US06751070B2 Thin film magnetic head and method for fabricating the same 失效
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US06751070B2
公开(公告)日：2004-06-15
申请号：US10153689
申请日：2002-05-24
申请人： Noriyuki Ito , Kosuke Tanaka , Koichi Terunuma
发明人： Noriyuki Ito , Kosuke Tanaka , Koichi Terunuma
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B5/3967 , Y10T29/49052
摘要： A first and a second longitudinal bias-applying films are formed via a first mask at both sides of a magnetoresistive effective element film so that the difference in surface level between the magnetoresistive effective element film and the first and the second longitudinal bias-applying films is set within ±20 nm. Then, a first and a second electrode films are formed so as to cover edge portions of the magnetoresistive effective element film and the first and the second longitudinal bias-applying films.
摘要翻译：通过第一掩模在磁阻有效元件膜的两侧形成第一和第二纵向偏置施加膜，使得磁阻有效元件膜与第一和第二纵向偏置施加膜之间的表面水平差异为设置在±20 nm以内。然后，形成第一和第二电极膜，以覆盖磁阻有效元件膜和第一和第二纵向偏置施加膜的边缘部分。

6. 发明授权

US06657826B2 Magnetoresistive device and method of manufacturing same, thin-film magnetic head and method of manufacturing same, head gimbal assembly and hard disk drive 失效
公开(公告)号：US06657826B2
公开(公告)日：2003-12-02
申请号：US09920821
申请日：2001-08-03
申请人： Koji Shimazawa , Koichi Terunuma
发明人： Koji Shimazawa , Koichi Terunuma
IPC分类号： G11B530
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/4806 , G11B2005/3996 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresisive device comprises: an MR element having two surfaces that face toward opposite directions and two side portions that face toward opposite directions; two bias field applying layers that are located adjacent to the side portions of the MR element and apply a longitudinal bias magnetic field to the MR element; and two electrode layers that are located adjacent to one of the surfaces of each of the bias field applying layers and feed a sense current to the MR element. The electrode layers overlap the one of the surfaces of the MR element. The magnetoresistive device further comprises two nonconductive layers that are located between the one of the surfaces of the MR element and the two electrode layers and located in two regions that include ends of the MR element near the side portions thereof, the two regions being parts of the region in which the electrode layers face toward the one of the surfaces of the MR element.

7. 发明授权

US06636395B1 Magnetic transducer and thin film magnetic head using the same 有权
标题翻译：磁性换能器和薄膜磁头使用相同
公开(公告)号：US06636395B1
公开(公告)日：2003-10-21
申请号：US09584371
申请日：2000-05-31
申请人： Koichi Terunuma
发明人： Koichi Terunuma
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3903 , G11B5/3967 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： Provided are a magnetic transducer, a thin film magnetic head and a method of manufacturing the same which can improve efficiency of heat dissipation. An MR element functioning as a magnetic transducer including: a nonmagnetic metal layer; a free layer formed on one surface of the nonmagnetic metal layer; a pinned layer formed on the other surface of the nonmagnetic metal layer; and an antiferromagnetic layer formed on a surface of the pinned layer, the surface being opposite to a surface in contact with the nonmagnetic metal layer. One end face of the free layer, the nonmagnetic metal layer, the pinned layer and the antiferromagnetic layer forms a medium facing surface forming a surface facing an external magnetic field. A tapered surface inclined to the medium facing surface is formed on the end face opposite to the medium facing surface of a stack comprising the free layer, the nonmagnetic metal layer, the pinned layer and the antiferromagnetic layer. A distance between the medium facing surface of the antiferromagnetic layer and the opposite face is longer than a distance between the medium facing surface of the free layer and the opposite face. Thus, a sufficient amount of heat dissipation from the antiferromagnetic layer can be ensured. Therefore, heating of the magnetic transducer can be prevented.
摘要翻译：提供一种磁传感器，薄膜磁头及其制造方法，其可以提高散热效率。一种用作磁换能器的MR元件，包括：非磁性金属层; 形成在非磁性金属层的一个表面上的自由层; 形成在非磁性金属层的另一个表面上的被钉扎层; 以及形成在被钉扎层的表面上的反铁磁性层，该表面与与非磁性金属层接触的表面相对。自由层，非磁性金属层，被钉扎层和反铁磁层的一个端面形成形成面向外部磁场的表面的面向介质的表面。在与包含自由层，非磁性金属层，被钉扎层和反铁磁层的堆叠的与介质相对的表面相对的端面上形成有向介质面向表面倾斜的锥形表面。反铁磁性层的介质面向表面与相对面之间的距离长于自由层的面向介质的表面与相对面之间的距离。因此，可以确保从反铁磁性层的足够的散热量。因此，可以防止磁换能器的加热。

8. 发明授权

US06604275B1 Method of manufacturing thin-film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US06604275B1
公开(公告)日：2003-08-12
申请号：US09702865
申请日：2000-11-01
申请人： Tetsuya Mino , Yasufumi Uno , Koji Matsukuma , Koichi Terunuma , Masahiro Kondo
发明人： Tetsuya Mino , Yasufumi Uno , Koji Matsukuma , Koichi Terunuma , Masahiro Kondo
IPC分类号： G11B5127
CPC分类号： G11B5/3967 , G11B5/3156 , Y10T29/49046 , Y10T29/49048
摘要： A method of manufacturing a thin-film magnetic head, includes the steps of: forming, on a lower auxiliary pole, a three-layer pole tip structure consisting of a lower pole tip element, a recording gap layer and an upper pole tip element; depositing a lower insulating layer on the three-layer pole tip structure; polishing the lower insulating layer by chemical-mechanical polishing so that a top surface of the lower insulating layer is leveled lower than a top of the three-layer pole tip structure over at least a region within which a coil conductor is formed; forming the coil conductor on the lower insulating layer; forming an upper insulating to cover the coil conductor; and forming an upper auxiliary pole so that a part of which contacts to the upper pole tip element.
摘要翻译：一种制造薄膜磁头的方法，包括以下步骤：在下辅助极上形成由下极尖端元件，记录间隙层和上极尖端元件组成的三层极尖端结构; 在三层极尖结构上沉积下绝缘层; 通过化学机械抛光来研磨下绝缘层，使得下绝缘层的顶表面至少在形成线圈导体的区域之上平坦于三层极尖端结构的顶部; 在下绝缘层上形成线圈导体; 形成上绝缘体以覆盖线圈导体; 以及形成上部辅助极，使得其一部分接触上极尖端元件。

9. 发明授权

US06545848B1 Magnetic transducer, thin film magnetic head and method of manufacturing the same 有权
标题翻译：磁性传感器，薄膜磁头及其制造方法
公开(公告)号：US06545848B1
公开(公告)日：2003-04-08
申请号：US09599896
申请日：2000-06-23
申请人： Koichi Terunuma
发明人： Koichi Terunuma
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/09 , G11B5/3932 , G11B2005/0008 , G11B2005/0016 , G11B2005/3996
摘要： A magnetic transducer and a thin film magnetic head capable of suppressing a reduction in reproducing output and of obtaining an appropriate bias magnetic field and a method of manufacturing the same. An MR element comprises a stack sensing an external magnetic field and magnetic domain control films applying a bias magnetic field to the stack. The magnetic domain control films are fabricated with a stack of magnetic domain control ferromagnetic films made of a ferromagnetic material and magnetic domain control antiferromagnetic films made of an antiferromagnetic material. The magnetic domain control ferromagnetic films are fabricated to have the magnetostriction &lgr;s within a range of −15×10−6
摘要翻译：能够抑制再现输出减小并获得适当偏置磁场的磁换能器和薄膜磁头及其制造方法。 MR元件包括感测外部磁场的堆叠和向叠层施加偏置磁场的磁畴控制膜。磁畴控制薄膜由铁磁材料和由反铁磁性材料制成的磁畴控制反铁磁膜制成的磁畴控制铁磁膜堆叠制成。制造磁畴控制铁磁性薄膜，使磁致伸缩体在-15×10 -6

10. 发明授权

US06381093B2 Thin film magnetic head with magnetic films with increasing widths from a surface facing a recording medium 失效
标题翻译：具有从面向记录介质的表面的宽度增加的磁性膜的薄膜磁头
公开(公告)号：US06381093B2
公开(公告)日：2002-04-30
申请号：US09161987
申请日：1998-09-29
申请人： Makoto Yoshida , Noboru Yamanaka , Koichi Terunuma , Yasufumi Uno
发明人： Makoto Yoshida , Noboru Yamanaka , Koichi Terunuma , Yasufumi Uno
IPC分类号： G11B531
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/313 , G11B5/3146
摘要： The present invention relates to a thin film magnetic head which eliminates the problems of degradation in the recording magnetic field pitch and recording bleed occurring due to leaked magnetic field by preventing magnetic saturation from occurring at pole tips. A write element is provided with a first pole portion, a second pole portion and a gap film. The gap film is provided between the first pole portion and the second pole portion. The second pole portion includes a third magnetic film and a fourth magnetic film. The third magnetic film is adjacent to the gap film and the fourth magnetic film is adjacent to the third magnetic film. The third magnetic film has a width W20 at a position receding from its surface facing opposite the medium by a receding quantity &Dgr;L, which is larger than the width W21 at the surface facing opposite the medium.
摘要翻译：薄膜磁头技术领域本发明涉及一种薄膜磁头，其消除了通过防止在极尖处产生磁饱和而引起的磁场泄漏而导致的记录磁场间距的劣化和记录泄漏的问题。写元件设置有第一极部分，第二极部分和间隙膜。间隙膜设置在第一极部和第二极部之间。第二极部包括第三磁性膜和第四磁性膜。第三磁性膜与间隙膜相邻，第四磁性膜与第三磁性膜相邻。第三磁性膜在从与介质相对的表面后退的位置处具有宽度W20，后退量DELTAL大于在与介质相对的表面处的宽度W21。

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