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1. 发明授权

US06479139B1 Superconducting substrate structure and a method of producing such structure 失效
标题翻译：超导基板结构及其制造方法
公开(公告)号：US06479139B1
公开(公告)日：2002-11-12
申请号：US09718668
申请日：2000-11-22
申请人： Tord Claeson , Zdravko Ivanov , Erland Wikborg
发明人： Tord Claeson , Zdravko Ivanov , Erland Wikborg
IPC分类号： B32B702
CPC分类号： H01L39/143 , H01L39/2454 , Y10T428/24975
摘要： A superconducting substrate structure with a high temperature superconducting (HTS) ground plane, for epitaxial growth of multilayers thereon is provided. The substrate structure includes a composite substrate structure with a first and a second substrate layer each covered by an HTS film, which HTS films are bonded together through annealing to form a buried superconducting layer wherein one of the substrate layers is polished to form a smooth insulating layer adjacent to an HTS layer. A method of producing a superconducting substrate structure is provided including the steps of arranging two substrate layers on which HTS films are provided such that the HTS films come in close contact to one another, applying a high pressure in an oxygen atmosphere and at an elevated temperature such that the HTS films are annealed and bonded together, and subsequently polishing one of the substrate layers to form a smooth insulator.
摘要翻译：提供了一种具有高温超导（HTS）接地层的超导衬底结构，用于在其上多层的外延生长。衬底结构包括具有由HTS膜覆盖的第一和第二衬底层的复合衬底结构，该HTS膜通过退火结合在一起以形成掩埋超导层，其中一个衬底层被抛光以形成平滑绝缘层与HTS层相邻。提供一种制造超导衬底结构的方法，包括以下步骤：在其上设置两个衬底层，其上设置有HTS膜，使得HTS膜彼此紧密接触，在氧气氛中和高温下施加高压使得HTS膜退火并结合在一起，并且随后抛光一个衬底层以形成平滑的绝缘体。

2. 发明授权

US06344659B1 Superconducting transistor arrangement and a method relating thereto 失效
标题翻译：超导晶体管布置及其相关方法
公开(公告)号：US06344659B1
公开(公告)日：2002-02-05
申请号：US09448709
申请日：1999-11-24
申请人： Zdravko Ivanov , Robert Shekhter , Anatoli Kadiqrobov , Tord Claeson , Mats Jonson , Erland Wikborg
发明人： Zdravko Ivanov , Robert Shekhter , Anatoli Kadiqrobov , Tord Claeson , Mats Jonson , Erland Wikborg
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , H01L39/228
摘要： The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base electrode thus forming a double barrier quantum well, and first and second superconducting gate electrodes to control the source-drain current. The base electrode comprises a ferromagnetic material enabling resonant tunneling of source-drain electrons when there are bound states within the quantum well structure matching the energy of said source-drain electrons. The invention also relates to a logical element comprising such an interferometer arrangement and to a method of controlling the conductance of an interferometer.
摘要翻译：本发明涉及一种包括源电极和漏电极的干涉仪装置，通过隧道势垒连接源电极和漏电极的基极，从而形成双势垒量子阱的基极，以及第一和第二超导栅电极来控制源漏电流。当在量子阱结构内的结合状态与所述源极 - 漏极电子的能量匹配时，基极包括铁磁材料，使得源 - 漏电子能够共振隧穿。本发明还涉及包括这种干涉仪布置的逻辑元件以及控制干涉仪电导的方法。

3. 发明授权

US06504469B1 Magnetoresistive element and method of producing a crystal structure 失效
标题翻译：磁阻元件及其制造方法
公开(公告)号：US06504469B1
公开(公告)日：2003-01-07
申请号：US09532467
申请日：2000-03-22
申请人： Zdravko Ivanov , Tord Claeson , Radoslov Chakalov , Erland Wikborg
发明人： Zdravko Ivanov , Tord Claeson , Radoslov Chakalov , Erland Wikborg
IPC分类号： H01L4300
CPC分类号： H01L43/12 , H01F10/1933 , H01L43/08 , Y10T428/12958
摘要： A magnetoresistive element, comprising a crystal structure with a grain boundary formed at a misorientation angle, and a method of producing a crystal structure having colossal magnetoresistance, wherein a grain boundary is formed at a misorientation angle. The crystal structure comprises a substrate layer and a CMR film layer epitaxially grown thereon, the CMR film layer having a plurality of first sections and a plurality of second sections with intermediate grain boundaries, the crystallographic axis of the first sections being different from the crystallographic axis of the second sections. The method comprises forming, on a base crystal material, a template comprising a first set of sections and a second set of sections with intermediate boundaries, the crystallographic axis of the first set being different from the crystallographic axis of the second set, and growing a film epitaxially on the base crystal material to form a plurality of grain boundaries over the boundaries between the first set and the second set.
摘要翻译：一种磁阻元件，包括具有以取向角取向的晶界的晶体结构，以及制造具有巨大磁阻的晶体结构的方法，其中晶界以取向角形成。晶体结构包括衬底层和外延生长在其上的CMR膜层，CMR膜层具有多个第一部分和具有中间晶界的多个第二部分，第一部分的晶体轴不同于晶体轴的第二部分。该方法包括在基底晶体材料上形成包括第一组部分的模板和具有中间边界的第二组截面，所述第一组的晶体轴与第二组的晶体轴不同，并且生长a 外延在基底晶体材料上以在第一组和第二组之间的边界上形成多个晶界。

4. 发明授权

US5831279A Device and method providing weak links in a superconducting film and device comprising weak links 失效
标题翻译：在超导薄膜中提供薄弱环节的装置和方法以及包括薄弱环节的装置
公开(公告)号：US5831279A
公开(公告)日：1998-11-03
申请号：US434194
申请日：1995-05-03
申请人： Erland Wikborg , Evgeni Stepantsov , Zdravko Ivanov , Tord Claeson
发明人： Erland Wikborg , Evgeni Stepantsov , Zdravko Ivanov , Tord Claeson
IPC分类号： H01L39/22 , H01L39/24 , H01L29/06 , H01B12/00 , H01L31/0256
CPC分类号： H01L39/225
摘要： A device with weak links (Josephson junctions) in a superconducting film has two single crystals connected through an interconnecting arrangement that may have one or more sublayers. At least two grain boundaries or at least one barrier are/is formed in the substrate.
摘要翻译：在超导膜中具有弱连接（约瑟夫逊结）的器件具有通过可能具有一个或多个子层的互连布置连接的两个单晶。在基板中形成至少两个晶界或至少一个势垒。

5. 发明授权

US06563153B2 Electrically tunable device and a method relating thereto 有权
标题翻译：电可调谐装置及其相关方法
公开(公告)号：US06563153B2
公开(公告)日：2003-05-13
申请号：US09885520
申请日：2001-06-20
申请人： Erland Wikborg , Zdravko Ivanov , Peter Petrov , Spartak Gevorgian
发明人： Erland Wikborg , Zdravko Ivanov , Peter Petrov , Spartak Gevorgian
IPC分类号： H01L2976
CPC分类号： H01L29/93
摘要： A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner. At least a first and a second layer of the ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer has a maximum.
摘要翻译：提出了一种包括基底层，铁电层结构和电极结构的薄膜铁电变容二极管器件。铁电层结构包括多个铁电层和以交替方式布置的多个中间缓冲层。至少第一层和第二层铁电层具有不同的居里温度，即第一铁电层的介电常数在不同于第二铁电层的介电常数为最大值。

6. 发明授权

US06433375B1 Tunable microwave devices 有权
标题翻译：可调微波设备
公开(公告)号：US06433375B1
公开(公告)日：2002-08-13
申请号：US09548161
申请日：2000-04-13
申请人： Erik Carlsson , Peter Peirov , Orest Vendik , Erland Wikborg , Zdravko Ivanov
发明人： Erik Carlsson , Peter Peirov , Orest Vendik , Erland Wikborg , Zdravko Ivanov
IPC分类号： H01L2976
CPC分类号： H01P7/082 , H01P1/181 , H01P7/088
摘要： An electrically tunable device, particularly for microwaves, includes a carrier substrate, conductors, and at least one tunable ferroelectric layer. Between the conductors and the tunable ferroelectric layer, a buffer layer including a thin film structure having a non-ferroelectric material is arranged.
摘要翻译：特别是用于微波的电可调谐装置包括载体衬底，导体和至少一个可调谐铁电层。在导体与可调铁电体层之间设置有具有非铁电材料的薄膜结构的缓冲层。

7. 发明授权

US07069064B2 Tunable ferroelectric resonator arrangement 有权
标题翻译：可调谐铁电谐振器装置
公开(公告)号：US07069064B2
公开(公告)日：2006-06-27
申请号：US10781930
申请日：2004-02-20
申请人： Spartak Gevorgian , Anatoly Deleniv , Orest Vendik , Erik Kollberg , Erland Wikborg
发明人： Spartak Gevorgian , Anatoly Deleniv , Orest Vendik , Erik Kollberg , Erland Wikborg
IPC分类号： H01P7/08 , H01B12/02
CPC分类号： H01P7/10 , H01P1/20
摘要： The present invention relates to a tunable resonating arrangement comprising a resonator apparatus (10), input/output coupling (4) means for coupling electromagnetic energy into/out of the resonator apparatus, and a tuning device (3) for application of a biasing voltage/electric field to the resonator apparatus. The resonator apparatus comprises a first resonator (1) and a second resonator (2). Said first resonator is non-tunable and said second resonator is tunable and comprises a ferroelectric substrate (21). Said first and second resonators are separated by a ground plane (13) which is common for said first and second resonators, and coupling means (5) are provided for providing coupling between said first and second resonators. For tuning of the resonator apparatus, the biasing voltage/electric field is applied to the second resonator (2).
摘要翻译：本发明涉及一种可调谐谐振装置，包括谐振器装置（10），输入/输出耦合装置（4）用于将电磁能耦合到谐振器装置中的装置和用于施加偏置电压的调谐装置（3） /电场。谐振器装置包括第一谐振器（1）和第二谐振器（2）。所述第一谐振器是不可调谐的，并且所述第二谐振器是可调谐的并且包括铁电衬底（21）。所述第一和第二谐振器由对于所述第一和第二谐振器共用的接地平面（13）分开，并且耦合装置（5）被提供用于在所述第一和第二谐振器之间提供耦合。为了谐振器装置的调谐，将偏置电压/电场施加到第二谐振器（2）。

8. 发明授权

US06985054B2 Ferroelectric devices and method relating thereto 失效
标题翻译：铁电元件及其相关方法
公开(公告)号：US06985054B2
公开(公告)日：2006-01-10
申请号：US10704146
申请日：2003-11-10
申请人： Spartak Gevorgian , Erland Wikborg
发明人： Spartak Gevorgian , Erland Wikborg
IPC分类号： H01P7/08 , H01L12/02
CPC分类号： H01G7/06
摘要： The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permitivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled.
摘要翻译：本发明涉及一种电控制/可调谐微波器件，其包括布置在所述衬底上的具有可变介电常数的铁电衬底和导电电极，其电容取决于所施加的电压C / V），所述微波器件至少包括基板/电极的两个部分或部分，其中每一个在施加电压时产生不同的电场强度。通过设备的设计和/或电压施加来控制所产生的电场强度，使得能够控制微波装置的电容（C（V））的电压依赖性的斜率（dC（dV））。

9. 发明授权

US06187717B1 Arrangement and method relating to tunable devices through the controlling of plasma surface waves 失效
标题翻译：通过控制等离子体表面波，可调谐装置的布置和方法
公开(公告)号：US06187717B1
公开(公告)日：2001-02-13
申请号：US08985149
申请日：1997-12-04
申请人： Erland Wikborg , Orest Vendik , Erik Kollberg , Spartek Gevorgian
发明人： Erland Wikborg , Orest Vendik , Erik Kollberg , Spartek Gevorgian
IPC分类号： H01P700
CPC分类号： H01P1/184 , H01P3/16 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： A tunable microwave monolithic integrated circuit includes a dielectric material with a variable dielectric constant. A superconducting material with a negative dielectric constant is provided which is arranged in relation to the dielectric material in such a way that at least one interface is formed between the superconducting material and the dielectric material. The dielectric material is a low loss non-linear bulk material. Phase velocity tuning of microwaves is provided through controlling the propagation of surface plasma waves of the microwaves along the interface(s).
摘要翻译：可调谐微波单片集成电路包括具有可变介电常数的介电材料。提供具有负介电常数的超导材料，其相对于介电材料布置成使得在超导材料和电介质材料之间形成至少一个界面。介电材料是低损耗非线性散装材料。通过控制微波沿着界面的表面等离子体波的传播来提供微波的相速度调谐。

10. 发明授权

US06185441B2 Arrangement and method relating to coupling of signals to/from microwave devices 失效
标题翻译：与微波设备耦合信号的方法和方法
公开(公告)号：US06185441B2
公开(公告)日：2001-02-06
申请号：US09061272
申请日：1998-04-17
申请人： Erland Wikborg , Erik Carlsson , Spartak Gevorgian
发明人： Erland Wikborg , Erik Carlsson , Spartak Gevorgian
IPC分类号： H01P708
CPC分类号： H01P7/10 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： An arrangement for coupling electro magnetic waves, particularly microwaves, into and/or out of a device which includes a dielectric resonator having a non-linear dielectric substrate with a high dielectric constant and a coupling loop. The dimensions of the resonator and the coupling loop are related to the resonant frequency of the resonator. The coupling loop is so arranged in relation to the resonator that the magnetic field lines around the coupling loop match the internal film distribution of at least one mode, which has been selected to be excited, so that only that mode is excited. Coupling is provided only for this mode. The length of the coupling loop is comparable to or larger that the dimensions of the resonator.
摘要翻译：用于将电磁波，特别是微波耦合到和/或从包括具有高介电常数的非线性介电衬底和耦合回路的介质谐振器的器件中的装置。谐振器和耦合回路的尺寸与谐振器的谐振频率有关。耦合回路相对于谐振器被布置成使得耦合环周围的磁场线匹配已经被选择为被激励的至少一个模式的内部膜分布，从而仅激发该模式。仅为此模式提供耦合。耦合回路的长度与谐振器的尺寸相当或更大。

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