专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110297950A1 CRYSTALLINE SEMICONDUCTOR FILM MANUFACTURING METHOD, SUBSTRATE COATED WITH CRYSTALLINE SEMICONDUCTOR FILM, AND THIN-FILM TRANSISTOR 审中-公开
标题翻译：晶体半导体膜制造方法，用晶体半导体膜包覆的衬底和薄膜晶体管
公开(公告)号：US20110297950A1
公开(公告)日：2011-12-08
申请号：US13212465
申请日：2011-08-18
申请人： Tomoya KATO , Tomohiko ODA , Sei OOTAKA
发明人： Tomoya KATO , Tomohiko ODA , Sei OOTAKA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02683 , H01L21/02532 , H01L27/1281 , H01L27/1285
摘要： To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the continuous-wave laser beam having a light intensity distribution continuously convex upward on each of major and minor axes; crystallizing the amorphous semiconductor film at the temperature increased to the range of 600° C. to 1100° C.; and increasing a crystal grain size of the crystallized amorphous semiconductor film, as a result of an increase in an in-plane temperature of the crystallized amorphous film to a range of 1100° C. to 1414° C. by latent heat released in the crystallizing of the amorphous semiconductor film.
摘要翻译：提供一种制造具有良好的面内均匀性的晶体结构的结晶半导体膜的方法。该方法包括：用连续波激光束照射非晶半导体膜以将非晶半导体膜的温度升高到600℃至1100℃的范围，具有光强度分布的连续波激光束每个主轴和短轴上均向上凸起; 在升温到600℃至1100℃的范围内使非晶半导体膜结晶化。并且通过在结晶化中释放的潜热使结晶化非晶膜的面内温度升高到1100℃至1414℃的范围，从而提高结晶化非晶半导体膜的晶粒度。的非晶半导体膜。

2. 发明申请

US20090224253A1 CRYSTALLIZATION METHOD, THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, DISPLAY, AND SEMICONDUCTOR DEVICE 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管，显示器和半导体器件
公开(公告)号：US20090224253A1
公开(公告)日：2009-09-10
申请号：US12467852
申请日：2009-05-18
申请人： Tomoya KATO , Masakiyo MATSUMURA
发明人： Tomoya KATO , Masakiyo MATSUMURA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/02675 , H01L21/02609 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
摘要翻译：根据结晶化方法，在通过用激光照射设置在绝缘基板上的40〜100nm的非单一半导体薄膜的结晶化中，在基板的表面上形成具有逆峰图案的光强度分布控制光强分布的光强度梯度，形成晶体晶格阵列，其中每个晶粒在晶体生长方向上比在宽度方向上具有更长的形状，并且具有优选的晶体取向（100）形成晶粒长度方向，并且形成TFT，其中形成源区和漏区，使得电流在晶粒生长方向上流过晶粒阵列的多个晶粒。

3. 发明申请

US20120032179A1 THIN-FILM TRANSISTOR ARRAY DEVICE, ORGANIC EL DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR ARRAY DEVICE 有权
标题翻译：薄膜晶体管阵列器件，有机EL显示器件及制造薄膜晶体管阵列器件的方法
公开(公告)号：US20120032179A1
公开(公告)日：2012-02-09
申请号：US13274491
申请日：2011-10-17
申请人： Tohru SAITOH , Tomoya KATO
发明人： Tohru SAITOH , Tomoya KATO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/0245 , H01L21/02532 , H01L21/02683 , H01L27/1229 , H01L27/1285
摘要： A thin-film transistor array device includes: a driving TFT including a first crystalline semiconductor film including crystal grains having a first average grain size; and a switching TFT including a second crystalline semiconductor film including crystal grains having a second average grain size that is smaller than the first average grain size. The first crystalline semiconductor film and the second crystalline semiconductor film are formed at the same time by irradiating a noncrystalline semiconductor film using a laser beam having a Gaussian light intensity distribution such that a temperature of the noncrystalline semiconductor film is within a range of 600° C. to 1100° C., and the first crystalline semiconductor film is formed such that the temperature of the noncrystalline semiconductor film is within a temperature range of 1100° C. to 1414° C. due to latent heat generated by the laser irradiation.
摘要翻译：薄膜晶体管阵列器件包括：驱动TFT，其包括具有第一平均晶粒尺寸的晶粒的第一晶体半导体膜; 以及包括具有比第一平均晶粒尺寸小的具有第二平均晶粒尺寸的晶粒的第二晶体半导体膜的开关TFT。通过使用具有高斯光强度分布的激光束照射非晶半导体膜，使得非晶半导体膜的温度在600℃的范围内，同时形成第一晶体半导体膜和第二晶体半导体膜形成第一结晶半导体膜，使得非晶半导体膜的温度由于激光照射产生的潜热而在1100℃至1414℃的温度范围内。

4. 发明申请

US20120204614A1 METHOD FOR MEASURING SHEET MATERIAL FLATNESS AND METHOD FOR PRODUCING STEEL SHEET USING SAID MEASURING METHOD 有权
标题翻译：用于测量板材的方法和使用测量方法生产钢板的方法
公开(公告)号：US20120204614A1
公开(公告)日：2012-08-16
申请号：US13444342
申请日：2012-04-11
申请人： Yoshito ISEI , Tomoya KATO , Masahiro OSUGI
发明人： Yoshito ISEI , Tomoya KATO , Masahiro OSUGI
IPC分类号： B21B37/28 , G01B11/25
CPC分类号： B21B38/02 , B21C51/00 , G01B11/2513 , G01B11/303 , G01B11/306 , G01N21/8806 , G01N21/89
摘要： A method for measuring flatness of a sheet material in which a light and dark pattern composed by a light portion and a dark portion is projected onto a surface of the sheet material running in a longitudinal direction, a pattern image is acquired by photographing the light and dark pattern by an image pickup device having an image pickup visual field larger than a width of the sheet material, and the flatness of the sheet material is measured by analyzing the acquired pattern image. A staggered pattern is used for the projecting step and for light to be specularly reflected for receipt by the image pickup device. Calculating the flatness also includes steps of setting a shape measurement line, averaging picture element concentrations, calculating a distribution of the concentrations, and calculating the flatness based on surface shape using the distribution.
摘要翻译：一种用于测量其中由光部分和暗部组成的光和暗图案被投影到沿纵向方向延伸的片材的表面上的片材的平整度的方法，通过拍摄光而获得图案图像，通过具有大于片材的宽度的图像拾取视野的图像拾取装置的暗图案，并且通过分析所获取的图案图像来测量片材的平坦度。用于投影步骤的交错图案，并且光被镜面反射以被图像拾取装置接收。平坦度的计算还包括设置形状测量线，平均图像元素浓度，计算浓度分布以及使用该分布计算基于表面形状的平坦度的步骤。

5. 发明申请

US20130098127A1 METHOD FOR MEASURING FLATNESS OF SHEET MATERIAL AND METHOD FOR MANUFACTURING STEEL SHEET USING THE SAME 有权
标题翻译：用于测量材料的平整度的方法和使用其制造钢板的方法
公开(公告)号：US20130098127A1
公开(公告)日：2013-04-25
申请号：US13654907
申请日：2012-10-18
申请人： Yoshito ISEI , Tomoya KATO , Masahiro OSUGI , Hideyuki TAKAHASHI
发明人： Yoshito ISEI , Tomoya KATO , Masahiro OSUGI , Hideyuki TAKAHASHI
IPC分类号： G01B11/30 , B21B1/22
CPC分类号： G01B11/303 , B21B1/22 , B21B38/02 , B21C51/00 , G01B11/2513 , G01B11/306
摘要： Measuring sheet material flatness includes projecting a bright and dark pattern P made up of bright parts and dark parts onto a sheet material surface S travelling in a lengthwise direction, picking up an image of pattern P with image pickup device to acquire a pattern image, with the pickup device having a field of view larger than a sheet material width. The acquired pattern image is analyzed, wherein a pattern P in which a bright part is disposed at a predetermined set pitch respectively in longitudinal and lateral directions is formed by an LED light at a predetermined pitch respectively in the longitudinal and lateral directions. The pattern P is projected onto the surface such that the longitudinal direction of the pattern P lies along a lengthwise direction of the sheet material, and the lateral direction of the pattern P lies along a width direction of the sheet material.
摘要翻译：测量片材平整度包括将由亮部和暗部组成的明暗图案P投影到沿长度方向行进的片材表面S上，用图像拾取装置拾取图案P的图像以获取图案图像，拾取装置具有比片材宽度大的视场。分析所获取的图案图像，其中分别在纵向和横向上以预定间距的LED光以纵向和横向分别以预定设定的间距设置明亮部分的图案P. 图案P被投影到表面上，使得图案P的纵向方向沿着片材的长度方向，并且图案P的横向方向沿着片材的宽度方向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式