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1. 发明授权

US5526563A Method for manufacturing an electronic component 失效
标题翻译：电子部件的制造方法
公开(公告)号：US5526563A
公开(公告)日：1996-06-18
申请号：US401258
申请日：1995-03-09
申请人： Tomohiro Tamaki , Kouichi Nagao , Hiroaki Fujimoto , Kazunari Nishihara
发明人： Tomohiro Tamaki , Kouichi Nagao , Hiroaki Fujimoto , Kazunari Nishihara
IPC分类号： H05K3/28 , H05K3/30 , H05K3/36
CPC分类号： H05K3/361 , H05K2201/0108 , H05K2201/0373 , H05K2201/09063 , H05K2201/09381 , H05K2201/09663 , H05K2201/10977 , H05K2203/1189 , H05K3/281 , H05K3/305 , Y10T29/49126
摘要： A flexible wiring board is constructed by placing, on a surface of a flexible ultraviolet-transmissive base member in the form of a layer, a conductive member in the form of a layer and a covering member in the form of a layer. The conductive member has an exposed leading area not covered with the covering member. A lead is aligned with an electrode and they are connected together with pressure exerted by a pressure applying jig which is ultraviolet-transmissive. A photosetting adhesive resin capable of shrinking in volume is injected between the flexible wiring board and a printed circuit board. The photosetting adhesive resin is irradiated with ultraviolet passing through the pressure applying jig and the base member. When irradiated with the ultraviolet rays, the photosetting adhesive resin hardens. Volume shrinkage force exerted by the photosetting adhesive resin enhances the connection between the lead and the electrode. Such a connecting procedure can be performed at room temperature thereby cutting down the cost of the flexible board and providing a wider range of applications thereof.
摘要翻译：柔性布线板通过以层的形式将柔性紫外线透射性底座部件的表面设置为层状的导电部件和覆盖部件的形式构成。导电构件具有未被覆盖构件覆盖的暴露的引导区域。引线与电极对准，并且通过由紫外线透过的加压夹具施加的压力连接在一起。能够在柔性布线板和印刷电路板之间注入能够收缩的光固化型粘合树脂。照射通过加压夹具和基材的紫外线照射粘合树脂。当用紫外线照射时，光固化粘合剂树脂变硬。由光固化粘合剂树脂施加的体积收缩力增强了引线与电极之间的连接。这种连接步骤可以在室温下进行，从而降低柔性板的成本并提供更广泛的应用范围。

2. 发明授权

US5316610A Bonding apparatus 失效
标题翻译：接合装置
公开(公告)号：US5316610A
公开(公告)日：1994-05-31
申请号：US992909
申请日：1992-12-18
申请人： Tomohiro Tamaki , Kenzo Hatada , Hiroaki Fujimoto , Yoshinobu Takeshita
发明人： Tomohiro Tamaki , Kenzo Hatada , Hiroaki Fujimoto , Yoshinobu Takeshita
IPC分类号： H01L21/60 , H01L21/00 , H05K3/32 , H05K13/04 , B27G11/02 , B31F5/04 , B32B31/24
CPC分类号： H01L21/67144 , H01L24/81 , H05K13/0469 , H01L2224/16 , H01L2224/75 , H01L2224/75263 , H01L2224/75301 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/83859 , H01L2224/83874 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01058 , H01L2924/01079 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178
摘要： A depression jig, having a depression chip and a holder for holding the depression chip, is provided which depresses against a wiring substrate a semiconductor chip placed on the wiring substrate. The holder has portions defining penetrations vertically running through the holder. Optical fibers are inserted into the penetrations. A light ray radiates from the optical fiber. The light ray is incident upon the top surface of the depression chip, enters the depression chip, is reflected from a side surface of the depression chip onto the undersurface of the depression chip, and is emitted from the undersurface of the depression chip as an outgoing light ray. A photo-curing resin supplied between the semiconductor chip and the wiring substrate is irradiated with such an outgoing light ray, so that the photo-curing resin hardens.
摘要翻译：提供了具有凹陷芯片和用于保持凹陷芯片的保持器的凹陷夹具，其将放置在布线基板上的半导体芯片压在布线基板上。保持器具有垂直延伸穿过保持器的穿透部分。将光纤插入穿孔中。光线从光纤辐射。光线入射到凹陷芯片的顶表面上，进入凹陷芯片，从凹陷芯片的侧表面反射到凹陷芯片的下表面上，并从凹陷芯片的下表面发射出去光线。用这样的出射光照射在半导体芯片和布线基板之间供给的光固化树脂，使得光固化树脂硬化。

3. 发明授权

US08350325B2 Power semiconductor device 有权
公开(公告)号：US08350325B2
公开(公告)日：2013-01-08
申请号：US13105889
申请日：2011-05-11
申请人： Tomohiro Tamaki , Yoshito Nakazawa
发明人： Tomohiro Tamaki , Yoshito Nakazawa
IPC分类号： H01L29/78
CPC分类号： H01L29/0634 , H01L29/0615 , H01L29/063 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41766 , H01L29/66681 , H01L29/66727 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/7823 , H01L29/7825
摘要： A problem associated with n-channel power MOSFETs and the like that the following is caused even by relatively slight fluctuation in various process parameters is solved: source-drain breakdown voltage is reduced by breakdown at an end of a p-type body region in proximity to a portion in the vicinity of an annular intermediate region between an active cell region and a chip peripheral portion, arising from electric field concentration in that area. To solve this problem, the following measure is taken in a power semiconductor device having a superjunction structure in the respective drift regions of a first conductivity type of an active cell region, a chip peripheral region, and an intermediate region located therebetween: the width of at least one of column regions of a second conductivity type comprising the superjunction structure in the intermediate region is made larger than the width of the other regions.

4. 发明申请

US20120161231A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120161231A1
公开(公告)日：2012-06-28
申请号：US13337647
申请日：2011-12-27
申请人： Tomohiro Tamaki , Yoshito Nakazawa
发明人： Tomohiro Tamaki , Yoshito Nakazawa
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L23/3107 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/66727 , H01L29/7816 , H01L2224/02166 , H01L2224/04042 , H01L2224/05624 , H01L2224/0603 , H01L2224/32245 , H01L2224/45139 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49111 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01079 , H01L2924/10253 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/18301 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/29099
摘要： In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer end of a surface region of a second conductivity type coupled to a main junction of the second conductivity type in a surface of a drift region of a first conductivity type and having a concentration lower than that of the main junction is located in a middle region between an outer end of the main junction and an outer end of the super-junction structure in the chip peripheral region.
摘要翻译：在诸如在有源单元区域和芯片外围区域中的每一个中具有超结结构的功率MOSFET的半导体功率器件中，第二导电类型的表面区域的外端与第二导电性的主结类型在第一导电类型的漂移区的表面中并且具有低于主结的浓度的漂移区的表面位于主结的外端和超结结构的外端之间的中间区域芯片外围区域。

5. 发明授权

US08575707B2 Semiconductor power device having a super-junction structure 有权
标题翻译：具有超结结构的半导体功率器件
公开(公告)号：US08575707B2
公开(公告)日：2013-11-05
申请号：US13337647
申请日：2011-12-27
申请人： Tomohiro Tamaki , Yoshito Nakazawa
发明人： Tomohiro Tamaki , Yoshito Nakazawa
IPC分类号： H01L27/088
CPC分类号： H01L29/7811 , H01L23/3107 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/66727 , H01L29/7816 , H01L2224/02166 , H01L2224/04042 , H01L2224/05624 , H01L2224/0603 , H01L2224/32245 , H01L2224/45139 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49111 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01079 , H01L2924/10253 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/18301 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/29099
摘要： In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer end of a surface region of a second conductivity type coupled to a main junction of the second conductivity type in a surface of a drift region of a first conductivity type and having a concentration lower than that of the main junction is located in a middle region between an outer end of the main junction and an outer end of the super-junction structure in the chip peripheral region.
摘要翻译：在诸如在有源单元区域和芯片外围区域中的每一个中具有超结结构的功率MOSFET的半导体功率器件中，第二导电类型的表面区域的外端与第二导电性的主结类型在第一导电类型的漂移区的表面中并且具有低于主结的浓度的漂移区的表面位于主结的外端和超结结构的外端之间的中间区域芯片外围区域。

6. 发明授权

US08598657B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08598657B2
公开(公告)日：2013-12-03
申请号：US13075834
申请日：2011-03-30
申请人： Tomohiro Tamaki , Yoshito Nakazawa
发明人： Tomohiro Tamaki , Yoshito Nakazawa
IPC分类号： H01L29/66
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0615 , H01L29/063 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7802 , H01L29/7813
摘要： Investigation of problems of the device structure of a power MOSFET and mass production of it in relation to high breakdown voltage and low ON resistance when an epitaxy trench filling system is employed has revealed that it has the following problem, that is, a high breakdown voltage as expected cannot be achieved because a P-column region does not have an ideal rectangular parallelepipedal shape but has an inverted trapezoidal shape narrower at the bottom thereof and at the same time, has a concentration distribution lower at the bottom. In order to overcome the problem, the present invention provides a semiconductor device including a power MOSFET portion equipped, in an active cell region thereof, a super junction structure formed by a trench filling system, wherein a base epitaxial layer has a multistage structure with the upper portion having a higher impurity concentration.
摘要翻译：当采用外延沟槽填充系统时，对功率MOSFET的器件结构的问题和大量生产相关的高击穿电压和低导通电阻的研究表明，它具有以下问题，即高的击穿电压由于P柱区域不具有理想的长方体形状，而是在其底部具有较窄的倒梯形形状，同时底部的浓度分布较低，因此无法实现。为了克服这个问题，本发明提供了一种半导体器件，其包括在其有源单元区域中配备由沟槽填充系统形成的超结结构的功率MOSFET部分，其中基极外延层具有多级结构，上部具有较高的杂质浓度。

7. 发明申请

US20110241111A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110241111A1
公开(公告)日：2011-10-06
申请号：US13075834
申请日：2011-03-30
申请人： Tomohiro Tamaki , Yoshito Nakazawa
发明人： Tomohiro Tamaki , Yoshito Nakazawa
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0615 , H01L29/063 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7802 , H01L29/7813
摘要： Investigation of problems of the device structure of a power MOSFET and mass production of it in relation to high breakdown voltage and low ON resistance when an epitaxy trench filling system is employed has revealed that it has the following problem, that is, a high breakdown voltage as expected cannot be achieved because a P-column region does not have an ideal rectangular parallelepipedal shape but has an inverted trapezoidal shape narrower at the bottom thereof and at the same time, has a concentration distribution lower at the bottom. In order to overcome the problem, the present invention provides a semiconductor device including a power MOSFET portion equipped, in an active cell region thereof, a super junction structure formed by a trench filling system, wherein a base epitaxial layer has a multistage structure with the upper portion having a higher impurity concentration.
摘要翻译：当采用外延沟槽填充系统时，对功率MOSFET的器件结构的问题和大量生产相关的高击穿电压和低导通电阻的研究表明，它具有以下问题，即高的击穿电压由于P柱区域不具有理想的长方体形状，而是在其底部具有较窄的倒梯形形状，同时底部的浓度分布较低，因此无法实现。为了克服这个问题，本发明提供了一种半导体器件，其包括在其有源单元区域中配备由沟槽填充系统形成的超结结构的功率MOSFET部分，其中基极外延层具有多级结构，上部具有较高的杂质浓度。

8. 发明授权

US09166036B2 Power MOSFET, an IGBT, and a power diode 有权
标题翻译：功率MOSFET，IGBT和功率二极管
公开(公告)号：US09166036B2
公开(公告)日：2015-10-20
申请号：US13548687
申请日：2012-07-13
申请人： Tomohiro Tamaki
发明人： Tomohiro Tamaki
IPC分类号： H01L29/78 , H01L29/40 , H01L29/868 , H01L29/66 , H01L29/739 , H01L29/861 , H01L29/06 , H01L29/16 , H01L29/417 , H01L29/10 , H01L29/872
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/402 , H01L29/404 , H01L29/41766 , H01L29/66727 , H01L29/7396 , H01L29/8611 , H01L29/868 , H01L29/872
摘要： Super-junction MOSFETs by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a given direction. Particularly, when column layout at chip corner part is bilaterally asymmetrical with a diagonal line between chip corners, equipotential lines in a blocking state are curved at corner parts due to column asymmetry at chip corner. This tends to cause points where equipotential lines become dense, which may cause breakdown voltage reduction. In the present invention, in power type semiconductor active elements such as power MOSFETs, a ring-shaped field plate is disposed in chip peripheral regions around an active cell region, etc., assuming a nearly rectangular shape. The field plate has an ohmic-contact part in at least a part of the portion along the side of the rectangle. However, in the portion corresponding to the corner part of the rectangle, an ohmic-contact part is not disposed.
摘要翻译：通过沟槽填充系统的超结MOSFET需要无空隙填充外延生长。这可能需要沿给定方向对准沟槽的平面取向。特别地，当芯片角部分的列布局在芯片角之间具有对角线的双向不对称时，由于芯片角部处的柱不对称，处于阻挡状态的等电位线在拐角部分弯曲。这会导致等电位线变稠的点，这可能会导致击穿电压的降低。在本发明中，在诸如功率MOSFET的功率型半导体有源元件中，环形场板设置在活动单元区域周围的芯片周边区域中，假定呈近似矩形。场板在沿矩形侧面的部分的至少一部分中具有欧姆接触部分。然而，在与矩形的角部对应的部分中，不设置欧姆接触部。

9. 发明申请

US20110115033A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110115033A1
公开(公告)日：2011-05-19
申请号：US12949765
申请日：2010-11-18
申请人： Tomohiro Tamaki , Yoshito Nakazawa , Satoshi Eguchi
发明人： Tomohiro Tamaki , Yoshito Nakazawa , Satoshi Eguchi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L27/088 , H01L29/0615 , H01L29/0619 , H01L29/063 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/41766 , H01L29/6634 , H01L29/66727 , H01L29/7395 , H01L29/7396
摘要： A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.
摘要翻译：解决超结结构的以下问题的半导体装置：由于体细胞区域（有源区域）的相对高的浓度，在周边区域（周边区域或结合区域）中难以实现击穿电压等于或高于通过常规的连接边缘端子结构或再结构的单元区域。半导体器件包括通过沟槽填充技术在单元区域中形成的具有超结结构的功率MOSFET。此外，在细胞区域周围的漂移区域中设置具有与细胞区域的侧面平行的取向的超结结构。

10. 发明授权

US07887665B2 Expanding method and expanding device 有权
标题翻译：扩展方法和扩展设备
公开(公告)号：US07887665B2
公开(公告)日：2011-02-15
申请号：US10532815
申请日：2003-10-27
申请人： Yuichi Kubo , Masateru Osada , Masayuki Azuma , Yasuyuki Sakaya , Yuusuke Arai , Tomohiro Tamaki
发明人： Yuichi Kubo , Masateru Osada , Masayuki Azuma , Yasuyuki Sakaya , Yuusuke Arai , Tomohiro Tamaki
IPC分类号： B32B15/00
CPC分类号： H01L21/6836 , H01L21/67132 , H01L2221/68327 , H01L2221/68336
摘要： An adhesive sheet (S) is expanded by expanding means (20) with a plate-like article (W) being mounted to a frame (F) after dicing of the plate-like article (W) to increase spacings between individual chips (T), an expanded state of the adhesive sheet (S) is maintained by expansion maintaining means (10), so that the plate-like article (W) is able to be conveyed together with the frame (F) with the spacings between the chips (T) being maintained, thereby preventing adjacent chips (T) from interfering with each other during the conveyance. This allows the plate-like article (W) after the dicing to be conveyed together with the frame (F) without edges of the adjacent chips (T) coming into contact with each other by vibration during the conveyance to cause chipping or microcracks in the edges.
摘要翻译：粘合片（S）通过扩张装置（20）膨胀，板状制品（W）在切割板状制品（W）之后安装到框架（F）上以增加单个芯片之间的间隔（T ），通过膨胀保持机构（10）保持粘合片（S）的膨胀状态，使得板状制品（W）能够与框架（F）一起以芯片之间的间隔（T），从而防止相邻的切屑（T）在输送过程中相互干扰。这样，切片后的板状物（W）与框架（F）一起被输送，相邻的切屑（T）的边缘在输送过程中通过振动而相互接触，从而引起切屑或微裂纹边缘。

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