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1. 发明授权

US6089677A Braking force control apparatus 失效
标题翻译：制动力控制装置
公开(公告)号：US6089677A
公开(公告)日：2000-07-18
申请号：US820336
申请日：1997-03-12
申请人： Tomohiro Fukumura , Shinji Matsumoto
发明人： Tomohiro Fukumura , Shinji Matsumoto
IPC分类号： B60W10/04 , B60K31/10 , B60T8/1755 , B60T8/1766 , B60T8/26 , B60T8/32 , B60T8/58 , B60T13/58 , B60W10/06 , B60W10/12 , B60W10/18 , B60W10/188 , B60T8/00
CPC分类号： B60T8/326 , B60K31/107 , B60T13/585 , B60T8/1755 , B60T8/266
摘要： An apparatus for use with an automotive vehicle supported on traction and follower road wheels to control the braking forces applied to the respective road wheels. A target vehicle deceleration is calculated based on a driver's force exerted to apply braking to the vehicle. Target braking forces required for the respective road wheels are calculated in a manner to achieve the target vehicle deceleration based on loads to be shared by the respective road wheels. Target brake torque for the respective road wheels are calculated based on the calculated target braking forces. Drive torque for the respective road wheels are calculated. The drive torque calculated for the respective traction road wheels are used to correct the corresponding target brake torque calculated for the respective traction road wheels so as to calculate target traction road wheel brake torque. The braking forces applied to the respective road wheels are controlled in a manner to achieve the target brake torque calculated for the respective follower road wheels and also to achieve the target traction road wheel brake torque calculated for the respective traction road wheels.
摘要翻译：一种用于与支撑在牵引和从动车轮上的机动车辆一起使用的装置，以控制施加到各个车轮的制动力。目标车辆减速度是根据驾驶员施加的制动力而计算的。以基于相应车轮共享的载荷的方式计算出各个车轮所需的目标制动力。基于计算出的目标制动力计算各个车轮的目标制动扭矩。计算各个车轮的驱动转矩。使用针对各个牵引车轮计算的驱动扭矩来校正针对各个牵引车轮计算出的对应的目标制动转矩，以计算目标牵引车轮制动扭矩。控制施加到各个车轮的制动力以实现针对各个跟随车轮计算的目标制动转矩，并且还实现针对各个牵引车轮计算的目标牵引路车制动扭矩。

2. 发明授权

US10818770B2 Metal oxide, field-effect transistor, and method for producing the same 有权
公开(公告)号：US10818770B2
公开(公告)日：2020-10-27
申请号：US16518265
申请日：2019-07-22
申请人： Minehide Kusayanagi , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae
发明人： Minehide Kusayanagi , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae
IPC分类号： H01L27/12 , H01L29/51 , H01L21/4757 , H01L21/4763 , H01L29/66 , H01L29/786
摘要： Method for producing field-effect transistor including source electrode and drain electrode, gate electrode, active layer, and gate insulating layer, the method including etching the gate insulating layer, wherein the gate insulating layer is metal oxide including A-element and at least one selected from B-element and C-element, the A-element is at least one selected from Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B-element is at least one selected from Ga, Ti, Zr, and Hf, the C-element is at least one selected from Group 2 elements in periodic table, etching solution A is used when at least one selected from the source electrode and the drain electrode, the gate electrode, and the active layer is formed, and etching solution B that is etching solution having same type as the etching solution A is used when the gate insulating layer is etched.

3. 发明授权

US10586873B2 Method for producing field-effect transistor 有权
公开(公告)号：US10586873B2
公开(公告)日：2020-03-10
申请号：US16131760
申请日：2018-09-14
申请人： Shinji Matsumoto , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
发明人： Shinji Matsumoto , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
IPC分类号： H01L21/00 , H01L21/16 , H01L29/786 , H01L21/02 , H01L27/12 , H01L29/04 , H01L29/24 , H01L51/00
摘要： A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solvent; and then removing the solvent to form the second-precursor-layer which is the precursor of the second-oxide-layer.

4. 发明授权

US10170635B2 Semiconductor device, display device, display apparatus, and system 有权
公开(公告)号：US10170635B2
公开(公告)日：2019-01-01
申请号：US15370253
申请日：2016-12-06
申请人： Shinji Matsumoto , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
发明人： Shinji Matsumoto , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
IPC分类号： H01L29/00 , H01L29/786 , H01L29/66 , H01L27/12 , H01L27/32 , G09G3/3233 , G09G3/34 , G09G3/36 , G09G3/38
摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

5. 发明授权

US10115828B2 Field-effect transistor, display element, image display device, and system 有权
公开(公告)号：US10115828B2
公开(公告)日：2018-10-30
申请号：US15220588
申请日：2016-07-27
申请人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
发明人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
IPC分类号： H01L21/336 , H01L21/768 , H01L29/24 , H01L29/45 , H01L29/49 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/30 , G09G3/3225 , G09G3/34 , H01L29/40 , H01L29/417 , H01L27/12 , H01L27/32 , H01L21/02 , H01L51/05 , H01L51/10 , H01L27/28 , H01L29/66
摘要： A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.

6. 发明授权

US10008181B2 Field-effect transistor, display element, image display device, and system 有权
公开(公告)号：US10008181B2
公开(公告)日：2018-06-26
申请号：US15452886
申请日：2017-03-08
申请人： Ryoichi Saotome , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
发明人： Ryoichi Saotome , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
IPC分类号： H01L27/12 , G09G5/10 , H01L27/32
CPC分类号： G09G5/10 , G09G3/20 , G09G2300/0426 , G09G2300/08 , G09G2320/0646 , H01L27/1225 , H01L27/124 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/78693
摘要： A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

7. 发明授权

US09972274B2 Field-effect transistor, display element, image display device, and system 有权
公开(公告)号：US09972274B2
公开(公告)日：2018-05-15
申请号：US15032192
申请日：2014-10-23
申请人： Ryoichi Saotome , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae
发明人： Ryoichi Saotome , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae
IPC分类号： H01L27/12 , G09G3/36 , H01L29/786 , H01L27/32
CPC分类号： G09G3/3696 , G09G3/3677 , G09G3/3688 , G09G2300/0809 , G09G2300/0842 , G09G2310/0278 , H01L27/1225 , H01L27/1248 , H01L27/3244 , H01L29/7869
摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

8. 发明授权

US09761673B2 Amorphous p-type oxide for a semiconductor device 有权
公开(公告)号：US09761673B2
公开(公告)日：2017-09-12
申请号：US14007705
申请日：2012-03-28
申请人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome
发明人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Shinji Matsumoto , Yuji Sone , Mikiko Takada , Ryoichi Saotome
IPC分类号： C01G3/02 , C01F11/02 , H01L29/24 , H01L29/786 , C01F5/06 , C01F11/04 , G09G3/32 , H01L29/04 , H01L27/32
CPC分类号： H01L29/242 , C01F5/06 , C01F11/04 , C01G3/02 , C01P2002/02 , G09G3/32 , H01L27/3244 , H01L29/04 , H01L29/78693
摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x

9. 发明授权

US09527285B2 Nozzle plate, liquid droplet discharge head, and liquid droplet discharge apparatus 有权
标题翻译：喷嘴板，液滴喷射头和液滴喷射装置
公开(公告)号：US09527285B2
公开(公告)日：2016-12-27
申请号：US15081307
申请日：2016-03-25
申请人： Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
发明人： Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
IPC分类号： B41J2/14
CPC分类号： B41J2/1433 , B41J2/06 , B41J2002/14491
摘要： A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.
摘要翻译：一种用于液滴喷射头喷射带电液滴的喷嘴板，包括设置在喷嘴面上的排出口; 填充有从排出口排出的液体的排出室; 喷嘴孔，其从所述排出口沿所述喷嘴板的厚度方向延伸并与所述排出室连通; 设置在所述排出室或所述喷嘴孔中的第一电极并接触所述液滴的一部分; 以及设置在喷嘴面上并且既不连接到第一电极也不与液滴接触的第二电极。

10. 发明申请

US20160013215A1 COATING LIQUID FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR, FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM 审中-公开
标题翻译：用于生产N型氧化物半导体的涂料液体，场效应晶体管，显示元件，图像显示装置和系统
公开(公告)号：US20160013215A1
公开(公告)日：2016-01-14
申请号：US14795234
申请日：2015-07-09
申请人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
发明人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
IPC分类号： H01L27/12 , G09G3/22 , C09D5/24 , H01L29/786 , H01L29/24
CPC分类号： H01L27/1225 , C09D5/24 , G09G3/22 , G09G2300/0421 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： A field-effect transistor, including: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode configured to take out electric current; an active layer formed of a n-type oxide semiconductor, and provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor includes at least one selected from the group consisting of Re, Ru, and Os as a dopant.
摘要翻译：一种场效应晶体管，包括：施加栅极电压的栅电极; 源电极和漏电极，被配置为取出电流; 由n型氧化物半导体形成的有源层，与源电极和漏电极接触; 以及栅极绝缘层，设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体包括选自由Re，Ru和Os组成的组中的至少一种作为掺杂剂。

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