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1. 发明申请

US20180369881A1 METHOD FOR CLEANING CHAMBER OF SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180369881A1
公开(公告)日：2018-12-27
申请号：US15779894
申请日：2016-10-20
申请人： TOKYO ELECTRON LIMITED
发明人： Yukimasa SAITO , Toshiki HINATA , Kazuya DOBASHI , Kyoko IKEDA , Shuji MORIYA
IPC分类号： B08B9/00 , H01L21/67 , H01L21/687 , H01L21/02
CPC分类号： B08B9/00 , B08B5/02 , C23C16/4401 , C23C16/4412 , C23C16/45563 , C23C16/45589 , H01L21/02057 , H01L21/67028 , H01L21/68764
摘要： According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).

2. 发明申请

US20230063907A1 SUBSTRATE CLEANING METHOD, PROCESSING CONTAINER CLEANING METHOD, AND SUBSTRATE PROCESSING DEVICE 有权
公开(公告)号：US20230063907A1
公开(公告)日：2023-03-02
申请号：US18048102
申请日：2022-10-20
申请人： Tokyo Electron Limited
发明人： Kyoko IKEDA , Kazuya DOBASHI , Tsunenaga NAKASHIMA , Kenji SEKIGUCHI , Shuuichi NISHIKIDO , Masato NAKAJO , Takahiro YASUTAKE
IPC分类号： B08B5/02
摘要： A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

3. 发明申请

US20170153172A1 PARTICLE CONCENTRATION MECHANISM, PARTICLE MEASURING DEVICE, AND SUBSTRATE PROCESSING APPARATUS INCLUDING PARTICLE MEASURING DEVICE 审中-公开
公开(公告)号：US20170153172A1
公开(公告)日：2017-06-01
申请号：US15359936
申请日：2016-11-23
申请人： TOKYO ELECTRON LIMITED
发明人： Kyoko IKEDA
IPC分类号： G01N15/06 , H01J37/32 , B03C3/49 , B03C3/02 , B01D53/32
CPC分类号： G01N15/0656 , B01D53/323 , B03C3/02 , B03C3/06 , B03C3/49 , G01N2015/0046 , H01J37/3244 , H01J37/32834 , H01J37/32853 , H01J37/32871 , H01J37/32981 , H01J2237/053 , H01J2237/334
摘要： A particle concentration mechanism including: a hollow member made of a conductor and having a space therein, through which the particles in a charged state flow together with a gas; a particle collecting nozzle made of a conductor which is inserted into the space within the hollow member and configured to collect the charged particles within the hollow member; an insulating member configured to insulate the hollow member from the particle collecting nozzle; and a DC power source configured to apply a DC voltage between the hollow member and the particle collecting nozzle. When the DC voltage is applied between the hollow member and the particle collecting nozzle, an electrostatic force directed to an inlet of the particle collecting nozzle acts on the charged particles within the hollow member, and the particles are guided into the particle collecting nozzle and concentrated.

4. 发明申请

US20220001426A1 SUBSTRATE CLEANING METHOD, PROCESSING CONTAINER CLEANING METHOD, AND SUBSTRATE PROCESSING DEVICE 有权
公开(公告)号：US20220001426A1
公开(公告)日：2022-01-06
申请号：US17295971
申请日：2019-11-20
申请人： Tokyo Electron Limited
发明人： Kyoko IKEDA , Kazuya DOBASHI , Tsunenaga NAKASHIMA , Kenji SEKIGUCHI , Shuuichi NISHIKIDO , Masato NAKAJO , Takahiro YASUTAKE
IPC分类号： B08B5/02
摘要： A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

5. 发明申请

US20180274094A1 GAS SUPPLY MEMBER AND GAS PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180274094A1
公开(公告)日：2018-09-27
申请号：US15922070
申请日：2018-03-15
申请人： TOKYO ELECTRON LIMITED
发明人： Kyoko IKEDA
IPC分类号： C23C16/44 , H01L21/67 , C23C16/455 , C23C16/458 , H01L21/02 , H01L21/687 , H01J37/32
CPC分类号： C23C16/4412 , C23C16/45546 , C23C16/45551 , C23C16/45578 , C23C16/4584 , C23C16/4586 , H01J37/3244 , H01J37/32458 , H01J37/32816 , H01L21/0228 , H01L21/67017 , H01L21/67109 , H01L21/68771
摘要： A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

6. 发明申请

US20210302846A1 SUBSTRATE STAGE AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20210302846A1
公开(公告)日：2021-09-30
申请号：US17204161
申请日：2021-03-17
申请人： Tokyo Electron Limited
发明人： Einosuke TSUDA , Daisuke TORIYA , Satoshi YONEKURA , Satoshi TAKEDA , Motoshi FUKUDOME , Kyoko IKEDA
IPC分类号： G03F7/20
摘要： The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

7. 发明申请

US20210268556A1 CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20210268556A1
公开(公告)日：2021-09-02
申请号：US17258431
申请日：2019-07-01
申请人： Tokyo Electron Limited
发明人： Kyoko IKEDA , Kazuya DOBASHI
IPC分类号： B08B7/02 , B08B5/02 , B08B13/00 , C23C16/44
摘要： A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

8. 发明申请

US20180355465A1 SUBSTRATE CLEANING APPARATUS 审中-公开
公开(公告)号：US20180355465A1
公开(公告)日：2018-12-13
申请号：US15781242
申请日：2016-10-25
申请人： TOKYO ELECTRON LIMITED
发明人： Yukimasa SAITO , Toshiki HINATA , Kazuya DOBASHI , Kyoko IKEDA , Shuji MORIYA
IPC分类号： C23C14/02 , C23C16/02 , H01L21/304 , C23C14/56 , C23C14/50 , H01L21/687 , H01L21/02
CPC分类号： C23C14/022 , C23C14/02 , C23C14/505 , C23C14/564 , C23C16/02 , H01L21/02041 , H01L21/302 , H01L21/304 , H01L21/68714
摘要： A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

9. 发明申请

US20160146539A1 Substrate Transfer System and Heat Treatment Apparatus Using Same 有权
标题翻译：基板转印系统和使用其的热处理装置
公开(公告)号：US20160146539A1
公开(公告)日：2016-05-26
申请号：US14948673
申请日：2015-11-23
申请人： TOKYO ELECTRON LIMITED
发明人： Koyu HASEGAWA , Kyoko IKEDA
IPC分类号： F27D3/00
CPC分类号： F27D3/0084 , F27D2003/0086 , H01L21/47 , H01L21/67017 , H01L21/67178 , H01L21/67766 , H01L21/67781
摘要： A substrate transfer system includes a substrate transfer part capable of transferring a substrate while holding the substrate, an elevating mechanism including a support axis extending in an upper-lower direction and being capable of moving the substrate transfer part along the support axis within a predetermined range, a first exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis above an upper limit of the predetermined range, a second exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis below a lower limit of the predetermined range, and an exhaust part connected such that exhaust is available through the first exhaust port and the second exhaust port.
摘要翻译：基板转印系统包括能够在保持基板的同时转印基板的基板转印部件，包括沿上下方向延伸的支撑轴线并能够将基板转印部件沿着支撑轴线移动到预定范围内的升降机构位于从所述支撑轴线上的支撑轴线和所述支撑轴线附近的支撑轴线上方的位置的位置处的第一排气口，其高于所述预定范围的上限;第二排气口，位于从所述支撑轴承中的至少一个位置并且靠近所述支撑轴线低于所述预定范围的下限，并且排气部分连接成使得可通过所述第一排气口和所述第二排气口排出废气。

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