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1. 发明申请

US20080299492A1 Exposure method and electronic device manufacturing method 有权
标题翻译：曝光方法和电子元件制造方法
公开(公告)号：US20080299492A1
公开(公告)日：2008-12-04
申请号：US12071913
申请日：2008-02-27
申请人： Tohru Kiuchi , Naomasa Shiraishi , Hideya Inoue
发明人： Tohru Kiuchi , Naomasa Shiraishi , Hideya Inoue
IPC分类号： G03F7/20
CPC分类号： G03F7/70258 , G03F7/70266 , G03F7/703 , G03F7/70425 , G03F7/70783 , G03F9/7084 , G03F9/7088 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： An exposure method for exposing a bright-dark pattern onto each exposure region of a substrate via a projection optical system includes a position detection process for detecting positions of a plurality of microscopic regions in a unit exposure field of the substrate, a deformation calculation step of calculating a state of deformation in the unit exposure field based on information related to the positions of the plurality of microscopic regions obtained in the position detection step, and a shape modification step of modifying the shape of the bright-dark pattern to be exposed on the substrate based on the deformation state obtained in the deformation calculation step. The microscopic regions detected in the position detection step include a circuit pattern formed in the unit exposure field.
摘要翻译：用于经由投影光学系统将亮暗图案曝光到基板的每个曝光区域上的曝光方法包括用于检测基板的单位曝光场中的多个微观区域的位置的位置检测处理，变形计算步骤基于与位置检测步骤中获得的多个微观区域的位置相关的信息，计算单位曝光区域中的变形状态;以及形状修改步骤，修改曝光于所述位置检测步骤中的明暗图案的形状基于在变形计算步骤中获得的变形状态的基板。在位置检测步骤中检测到的微观区域包括在单位曝光区域中形成的电路图案。

2. 发明授权

US08440375B2 Exposure method and electronic device manufacturing method 有权
标题翻译：曝光方法和电子元件制造方法
公开(公告)号：US08440375B2
公开(公告)日：2013-05-14
申请号：US12071913
申请日：2008-02-27
申请人： Tohru Kiuchi , Naomasa Shiraishi , Hideya Inoue
发明人： Tohru Kiuchi , Naomasa Shiraishi , Hideya Inoue
IPC分类号： G03F9/00
CPC分类号： G03F7/70258 , G03F7/70266 , G03F7/703 , G03F7/70425 , G03F7/70783 , G03F9/7084 , G03F9/7088 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： An exposure method for exposing a bright-dark pattern onto each exposure region of a substrate via a projection optical system includes a position detection process for detecting positions of a plurality of microscopic regions in a unit exposure field of the substrate, a deformation calculation step of calculating a state of deformation in the unit exposure field based on information related to the positions of the plurality of microscopic regions obtained in the position detection step, and a shape modification step of modifying the shape of the bright-dark pattern to be exposed on the substrate based on the deformation state obtained in the deformation calculation step. The microscopic regions detected in the position detection step include a circuit pattern formed in the unit exposure field.
摘要翻译：用于经由投影光学系统将亮暗图案曝光到基板的每个曝光区域上的曝光方法包括用于检测基板的单位曝光场中的多个微观区域的位置的位置检测处理，变形计算步骤基于与位置检测步骤中获得的多个微观区域的位置相关的信息，计算单位曝光区域中的变形状态;以及形状修改步骤，修改曝光于所述位置检测步骤中的明暗图案的形状基于在变形计算步骤中获得的变形状态的基板。在位置检测步骤中检测到的微观区域包括在单位曝光区域中形成的电路图案。

3. 发明申请

US20090042139A1 Exposure method and electronic device manufacturing method 审中-公开
标题翻译：曝光方法和电子元件制造方法
公开(公告)号：US20090042139A1
公开(公告)日：2009-02-12
申请号：US12071911
申请日：2008-02-27
申请人： Naomasa Shiraishi , Hideya Inoue
发明人： Naomasa Shiraishi , Hideya Inoue
IPC分类号： G03F7/20
CPC分类号： G03F7/70783 , G03F7/70266 , G03F7/703 , G03F7/70425 , G03F7/70633 , G03F9/7003 , G03F9/7084 , G03F9/7088 , H01L23/544 , H01L2223/54453 , H01L2223/5446 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： An exposure method enabling deformation occurring in a unit exposure field to be measured rapidly and accurately and enabling a plurality of patterns to be superimposed on a substrate with high accuracy. The exposure method of the present embodiment for exposing a bright-dark pattern on the substrate using a projection optical system includes a position detection process for detecting the positions of a plurality of position detection marks, relative to a substrate-in-plane-direction of the substrate, arranged in at least one functional element in a unit exposure field of the substrate, a deformation calculation process for calculating the state of deformation occurring in the unit exposure field based on information related to the positions of the position detection marks obtained in the position detection process, and a shape modification process for modifying the shape of the bright-dark pattern to be exposed on the substrate based on the deformation state obtained in the deformation calculation process.
摘要翻译：能够快速，准确地测量在单位曝光场中发生变形的曝光方法，能够将多个图案高精度地叠加在基板上。使用投影光学系统在基板上曝光明暗图案的本实施例的曝光方法包括：位置检测处理，用于检测多个位置检测标记相对于基板的平面方向的位置基板，布置在基板的单位曝光区域中的至少一个功能元件中，基于与在所述基板中获得的位置检测标记的位置相关的信息来计算在单位曝光区域中发生的变形状态的变形计算处理位置检测处理，以及用于基于在变形计算处理中获得的变形状态来修改要暴露在基板上的亮暗图案的形状的形状修改处理。

4. 发明申请

US20090042115A1 Exposure apparatus, exposure method, and electronic device manufacturing method 审中-公开
标题翻译：曝光装置，曝光方法和电子装置的制造方法
公开(公告)号：US20090042115A1
公开(公告)日：2009-02-12
申请号：US12071912
申请日：2008-02-27
申请人： Hideya Inoue , Naomasa Shiraishi
发明人： Hideya Inoue , Naomasa Shiraishi
IPC分类号： G03F9/00 , G03B27/68
CPC分类号： G03F7/70783 , G03F7/70266 , G03F7/703 , G03F7/70425 , G03F7/70633 , G03F9/7088
摘要： An exposure apparatus for exposing a bright-dark pattern on a substrate via a projection optical system includes a position detection system which detects a plurality of predetermined positions in a unit exposure field of the substrate. A plurality of reference detection positions fall within a range substantially equal to the unit exposure field. A deformation calculation unit calculates a state of deformation in the unit exposure field based on the detection result of the position detection system. A shape modification unit modifies a shape of the bright-dark pattern to be exposed on the substrate based on the deformation state calculated by the deformation calculation unit.
摘要翻译：用于经由投影光学系统曝光在基板上的明暗图案的曝光装置包括位置检测系统，其检测基板的单位曝光场中的多个预定位置。多个参考检测位置落在基本等于单位曝光场的范围内。变形计算单元基于位置检测系统的检测结果来计算单位曝光区域中的变形状态。形状修改单元基于由变形计算单元计算的变形状态来修改要暴露在基板上的亮暗图案的形状。

5. 发明授权

US07109508B2 Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus 有权
标题翻译：检测基板上标记位置的方法，使用该方法的位置检测装置以及使用该位置检测装置的曝光装置
公开(公告)号：US07109508B2
公开(公告)日：2006-09-19
申请号：US10400871
申请日：2003-03-28
申请人： Naomasa Shiraishi
发明人： Naomasa Shiraishi
IPC分类号： G01N21/86
CPC分类号： G03F9/70 , G03F9/7049 , G03F9/7088
摘要： An exposure apparatus and method in which a mark on an object is illuminated, and plural pairs of two diffractive beams of same order are generated and directed to different reference gratings to detect positional information of the mark. Beams received from the different reference gratings have different order.
摘要翻译：一种曝光装置和方法，其中物体上的标记被照亮，并且产生相同阶数的多对两个衍射光束并被引导到不同的参考光栅以检测标记的位置信息。从不同参考光栅接收的光束具有不同的顺序。

6. 发明申请

US20060203214A1 Illumination optical apparatus and projection exposure apparatus 有权
公开(公告)号：US20060203214A1
公开(公告)日：2006-09-14
申请号：US11410952
申请日：2006-04-26
申请人： Naomasa Shiraishi
发明人： Naomasa Shiraishi
IPC分类号： G03B27/52
CPC分类号： G03F7/70191 , G02B3/0006 , G02B5/3083 , G02B27/28 , G02B27/283 , G02B27/286 , G03F7/70108 , G03F7/70341 , G03F7/70566 , G03F7/70966
摘要： An illumination optical apparatus and projection exposure apparatus capable of reducing a light quantity loss when a mask is illuminated with a polarized illumination light. An illumination optical system for illuminating a reticle with an illumination light and a projection optical system for projecting the pattern image of the reticle onto a wafer are provided. An illumination light emitted from an exposure light source in a linearly polarized state in the illumination optical system passes through first and second birefringent members having different fast axis directions and is converted into a polarized state that is substantially linearly polarized in a circumferential direction with the optical axis as the center in an almost specific annular area, and them illuminates the reticle under an annular illuminating condition after passing through a fly-eye lens.

7. 发明授权

US07050148B2 Optical unit, exposure apparatus, and device manufacturing method 失效
公开(公告)号：US07050148B2
公开(公告)日：2006-05-23
申请号：US10997940
申请日：2004-11-29
申请人： Naomasa Shiraishi
发明人： Naomasa Shiraishi
IPC分类号： G03B27/52 , G03B27/42 , G02B7/02 , G02B15/14
CPC分类号： G03F7/70808 , G03F7/70825 , G03F7/70833 , G03F7/70883 , G03F7/70933
摘要： In a barrel of an optical unit a ring shaped support member is integrally arranged, and three projected portions are arranged on the upper surface of the support member. The projected portions support a lower surface of a parallel flat plate supported in direct contact. In this supported state, the parallel flat plate opposes a surface of the support member with a clearance of several μm in between. With this arrangement, the space in one side of the parallel flat plate is substantially isolated from the space in the other side. Accordingly, for example, even if gas environment in the space on one side of the parallel flat plate is different from the other side, gases can be effectively kept from mixing. In addition, since the parallel flat plate is supported at three coplanar points, deformation of the parallel flat plate can be suppressed due to the force supporting the parallel flat plate, thereby suppressing the index of refraction from varying.

8. 发明申请

US20050122499A1 Projection optical system and an exposure apparatus with the projection optical system 审中-公开
标题翻译：投影光学系统和投影光学系统的曝光装置
公开(公告)号：US20050122499A1
公开(公告)日：2005-06-09
申请号：US10982781
申请日：2004-11-08
申请人： Yasuhiro Omura , Naomasa Shiraishi , Issey Tanaka , Soichi Owa , Toshihiko Ozawa , Shunsuke Niisaka
发明人： Yasuhiro Omura , Naomasa Shiraishi , Issey Tanaka , Soichi Owa , Toshihiko Ozawa , Shunsuke Niisaka
IPC分类号： G02B13/24 , G02B17/08 , G03F7/20 , G03B27/54
CPC分类号： G02B17/0892 , G02B13/24 , G02B17/08 , G03F7/70225 , G03F7/70233 , G03F7/70358 , G03F7/70566 , G03F7/70966
摘要： A projection optical system, which forms a reduced image of a first surface onto a second surface, has excellent optical performance without substantially being affected by birefringence despite the use of optical material having intrinsic birefringence. This is done by suitably arranging certain crystal axes of radiation transmissive members that make up the projection optical system relative to the optical axis of the projection optical system, and by suitably arranging the certain crystal axes of the radiation transmissive members relative to the crystal axes of other radiation transmissive members in the projection optical system.
摘要翻译：将第一表面的缩小图像形成到第二表面上的投影光学系统虽然使用具有固有双折射的光学材料，但是基本上不受双折射的影响，具有优异的光学性能。这通过适当地布置构成投影光学系统的相对于投影光学系统的光轴的辐射透射构件的某些晶轴，并且通过将辐射透射构件的某些晶轴相对于晶体轴适当地布置投影光学系统中的其他辐射透射构件。

9. 发明授权

US06731371B1 Exposure method and apparatus, and method of fabricating a device 失效
标题翻译：曝光方法和装置以及制造装置的方法
公开(公告)号：US06731371B1
公开(公告)日：2004-05-04
申请号：US09690591
申请日：2000-10-18
申请人： Naomasa Shiraishi
发明人： Naomasa Shiraishi
IPC分类号： G03B2752
CPC分类号： G03F7/70933 , G03B27/52 , G03F7/70816
摘要： The image of a pattern of reticle 12 is, being illuminated with exposure light IL of vacuum ultraviolet range, projected, via projection optical system PL, onto wafer 17a on wafer stage 18a in wafer chamber 24. By providing gas blowing plate 15 in which aperture portion 15a for the exposure light optical path is provided between projection optical system PL and wafer 17a, exhausting a gas in the first space S1 over gas blowing plate 15 via exhaust port G1e, purifying the exhausted gas, and then by blowing the purified gas again into space S1 via gas supply port G1i, outgases from wafer 17a are efficiently exhausted. Into the second space S2 under gas blowing plate 15 is supplied a gas of which contamination degree of impurities is controlled to be more relaxed compared with the gas in the first space S1. By this, even when using vacuum ultraviolet light as exposure light, with the decrease of transmittance on the optical path being controlled, a high exposure light intensity can be obtained.
摘要翻译：标线片12的图案被真空紫外线范围的曝光光IL照射，经由投影光学系统PL投影到晶片室24中的晶片台18a上的晶片17a上。通过提供气体吹入板15，其中孔用于曝光光路的部分15a设置在投影光学系统PL和晶片17a之间，通过排气口G1e排出气体吹出板15上的第一空间S1中的气体，净化排出的气体，然后再次吹送净化气体通过气体供给口G1i进入空间S1，能够有效地排出来自晶片17a的气体。向气体吹入板15内的第二空间S2供给与第一空间S1中的气体相比，将杂质的污染程度控制得比较宽松的气体。由此，即使使用真空紫外线作为曝光光，随着光路上透射率的降低受到控制，也能获得高的曝光光强度。

10. 发明授权

US06727025B1 Photomask and exposure method 失效
标题翻译：光掩模和曝光方法
公开(公告)号：US06727025B1
公开(公告)日：2004-04-27
申请号：US09806593
申请日：2001-06-25
申请人： Naomasa Shiraishi
发明人： Naomasa Shiraishi
IPC分类号： G03F900
CPC分类号： G03F7/70058 , G03F1/50 , G03F7/70433 , G03F7/70958
摘要： A photomask illuminated with an exposure illuminating light having a short wavelength of, e.g., about 200 nm or less and having an improved uniformity of transmittance distribution. On one surface (B) of a flat substrate (1) made of quartz, a quartz glass, or a quartz glass to which a predetermined impurity is added, a thin film (3) made of a material semitrasparent to the exposure illuminating light. The transmittance distribution for the illuminating light of the substrate (1) is measured prior to the formation of the thin film (3), and the distribution of the thickness of the thin film (3) is determined so as to compensate the unevenness of the transmittance distribution. An original pattern (2) is formed on the opposed surface (A) of the substrate (1) to the surface (B).
摘要翻译：用曝光照明的光掩模，其具有短波长例如约200nm或更小，并具有改善的透射率分布均匀性。在由石英制成的平面基板（1）的一个表面（B）上，添加有预定杂质的石英玻璃或石英玻璃制成由对曝光照明光进行半透明的材料制成的薄膜（3）。在形成薄膜（3）之前测量基板（1）的照明光的透射率分布，并且确定薄膜（3）的厚度分布，以便补偿薄膜透光率分布。在基板（1）的与表面（B）相对的表面（A）上形成原始图案（2）。

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